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    • 1. 发明申请
    • METHODS FOR CONSTRUCTING AN OPTIMAL ENDPOINT ALGORITHM
    • 构建最优端点算法的方法
    • WO2011002810A3
    • 2011-04-14
    • PCT/US2010040477
    • 2010-06-29
    • LAM RES CORPWANG JIANGXINPERRY ANDREW JAMESVENUGOPAL VIJAYAKUMAR C
    • WANG JIANGXINPERRY ANDREW JAMESVENUGOPAL VIJAYAKUMAR C
    • H01L21/66H01L21/00H01L21/3065
    • H01J37/3299H01J37/32935
    • A method for automatically identifying an optimal endpoint algorithm for qualifying a process endpoint during substrate processing within a plasma processing system is provided. The method includes receiving sensor data from a plurality of sensors during substrate processing of at least one substrate within the plasma processing system, wherein the sensor data includes a plurality of signal streams from a plurality of sensor channels. The method also includes identifying an endpoint domain, wherein the endpoint domain is an approximate period within which the process endpoint is expected to occur. The method further includes analyzing the sensor data to generate a set of potential endpoint signatures. The method yet also includes converting the set of potential endpoint signatures into a set of optimal endpoint algorithms. The method yet further includes importing one optimal endpoint algorithm of the set of optimal endpoint algorithms into production environment.
    • 提供了一种用于在等离子体处理系统内的衬底处理期间自动识别用于限定过程端点的最佳端点算法的方法。 该方法包括在等离子体处理系统内的至少一个衬底的衬底处理期间从多个传感器接收传感器数据,其中传感器数据包括来自多个传感器通道的多个信号流。 该方法还包括识别端点域,其中端点域是期望发生处理端点的大概周期。 该方法还包括分析传感器数据以产生一组潜在的端点签名。 该方法还包括将潜在端点签名集合转换成一组最优端点算法。 该方法还包括将一组最优端点算法的一个最优端点算法导入到生产环境中。
    • 6. 发明申请
    • SYSTEM AND METHOD FOR INTEGRATED MULTI-USE OPTICAL ALIGNMENT
    • 用于集成多用途光学对准的系统和方法
    • WO2005028994A2
    • 2005-03-31
    • PCT/US2004/025517
    • 2004-08-05
    • LAM RESEARCH CORPORATIONPERRY, AndrewSTEGER, RobertBENJAMIN, Neil
    • PERRY, AndrewSTEGER, RobertBENJAMIN, Neil
    • G01B9/00
    • G01C1/00H01J2237/30438H01L21/681
    • An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector in included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.
    • 提供一种用于半导体处理系统的光学对准系统。 光学对准系统包括具有集成到晶片卡盘的顶表面中的对准特征的晶片卡盘。 此外,能够将光信号发射到对准特征上的波束形成系统设置在晶片卡盘上方。 此外,包括的检测器可以检测发射到对准特征上的光信号的幅度。 在一个方面,对准特征可以是将光信号的一部分反射回光束检测器的反射对准特征。 在另外的方面,对准特征可以是能够允许光信号的一部分通过晶片卡盘到达检测器的透射率对准特征。 在这方面,检测器可以设置在晶片卡盘的下方。
    • 8. 发明申请
    • METHOD FOR CONTROLLING A RECESS ETCH PROCESS
    • 控制记忆蚀刻过程的方法
    • WO2004015727A2
    • 2004-02-19
    • PCT/US2003/025156
    • 2003-08-12
    • LAM RESEARCH CORPORATIONVENUGOPAL, Vijayakumar, C.PERRY, Andrew, J.
    • VENUGOPAL, Vijayakumar, C.PERRY, Andrew, J.
    • H01G
    • G01B11/0683G01B11/0616G01B11/0625H01L27/1087H01L29/66181
    • A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.
    • 控制其中具有沟槽的多层衬底的凹陷蚀刻工艺和沉积在沟槽中的材料柱的方法包括通过获得测量的净反射率来确定从衬底的表面到衬底中的参考点的第一维度 衬底的至少一部分包括沟槽,计算衬底部分的建模净反射率作为来自构成衬底部分的n1个不同区域的反射率的加权非相干总和,确定提供紧密匹配的一组参数 在测量的净反射率和建模的净反射率之间,并从该组参数中提取第一维度; 计算作为第一尺寸的函数的过程的端点和从参考点测量的期望的凹陷深度; 并且从材料柱的表面向下蚀刻直到达到端点。
    • 9. 发明申请
    • A SECURE WIRELESS REMOTE ENTRY SYSTEM
    • 安全无线远程进入系统
    • WO2008043125A1
    • 2008-04-17
    • PCT/AU2007/000311
    • 2007-03-13
    • MICROLATCH PTY LTDBROWN, Perry, Andrew
    • BROWN, Perry, Andrew
    • H04L9/32
    • H04L63/10G06F21/32G07C9/00158G07C2209/62H04L63/0861
    • A system (100) for providing secure access to a controlled item (111) is disclosed. The system (100) comprises a transmitter subsystem (116) comprising means for storing a Wiegand protocol identifier, means for receiving a request, means for generating a code from a sequence of codes based on the Wiegand identifier, upon receiving the request, means for encoding the code and the Wiegand protocol identifier, and means for transmitting a secure access signal comprising the code and the encoded Wiegand protocol identifier. The system (100) also comprises a receiver sub-system (117) comprising means for receiving the transmitted secure access signal, and means for providing conditional access to the controlled item (111) dependent upon the code and the Wiegand protocol identifier.
    • 公开了一种用于提供对被控制物品(111)的安全访问的系统(100)。 所述系统(100)包括发射机子系统(116),包括用于存储威格协议标识符的装置,用于接收请求的装置,用于在接收到所述请求时基于所述维根标识符从所述代码序列生成代码的装置, 对代码和韦根协议标识符进行编码,以及用于发送包括代码和编码的韦根协议标识符的安全访问信号的装置。 系统(100)还包括接收机子系统(117),其包括用于接收所发送的安全接入信号的装置,以及用于根据所述代码和所述维根协议标识符提供对受控项目(111)的条件访问的装置。
    • 10. 发明申请
    • METHOD AND SYSTEM FOR ELECTRONIC SPATIAL FILTERING OF SPECTRAL REFLECTOMETER OPTICAL SIGNALS
    • 用于光谱反射光学信号的电子空间滤波的方法和系统
    • WO2005010935A2
    • 2005-02-03
    • PCT/US2004/020666
    • 2004-06-24
    • LAM RESEARCH CORPORATIONPERRY, Andrew
    • PERRY, Andrew
    • H01L
    • H01J37/32935G01N21/272H01J37/32972H01L22/26
    • A method for determining endpoint of plasma processing of a semiconductor wafer includes providing a light source, and providing a lens system to collimate and align light from the light source to an active surface of the semiconductor wafer. A plurality of light detector fibers are interleaved among light source fibers which transmit light from the light source to the lens system. Reflected light from the active surface of the semiconductor wafer is received by a plurality of light detector fibers and provided to an imaging spectrometer. The received reflected light is analyzed by the imaging spectrometer, and matched to a model optical signal. The matched optical signal is selected to determine endpoint or other state of the plasma processing.
    • 用于确定半导体晶片的等离子体处理的终点的方法包括提供光源,并且提供透镜系统以将来自光源的光准直并对准到半导体晶片的有源表面。 多个光检测器光纤在将来自光源的光透射到透镜系统的光源光纤之间插入。 来自半导体晶片的有源表面的反射光被多个光检测器光纤接收并提供给成像光谱仪。 接收的反射光由成像光谱仪分析,并与模型光学信号匹配。 选择匹配的光信号以确定等离子体处理的终点或其他状态。