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1. 发明申请

WO2004073025A3 METHODS OF REDUCING PHOTORESIST DISTORTION WHILE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：减少等离子体处理系统中蚀刻光电子失效的方法
公开(公告)号：WO2004073025A3
公开(公告)日：2005-03-03
申请号：PCT/US2004003139
申请日：2004-02-03
申请人： LAM RES COMPORATION , RUSU CAMELIA , SRINIVASAN MUKUND
发明人： RUSU CAMELIA , SRINIVASAN MUKUND
IPC分类号： C23F1/00 , H01L20060101 , H01L21/00 , H01L21/027 , H01L21/3065 , H01L21/311 , H01L21/32
CPC分类号： H01L21/31144
摘要： A method for substantially reducing photoresist wiggling while etching a layer on a substrate is provided. The substrate having thereon the layer disposed below a photoresist mask is introduced into the plasma processing chamber. An etchant source gas mixture is flowed into the plasma processing chamber, where the etchant source gas mixture comprises xenon and an active etchant, where a flow rate of the xenon is at least 35% of etchant source gas mixture. A plasma is struck from the etchant source gas mixture. The layer is etched with the plasma, where the flow rate of xenon reduces photoresist wiggling.
摘要翻译：提供了一种在蚀刻衬底上的层的同时基本上减少光致抗蚀剂摆动的方法。其上具有设置在光致抗蚀剂掩模下方的层的衬底被引入等离子体处理室。蚀刻剂源气体混合物流入等离子体处理室，其中蚀刻剂源气体混合物包括氙和活性蚀刻剂，其中氙的流速为腐蚀剂源气体混合物的至少35％。从蚀刻剂源气体混合物中冲击等离子体。用等离子体蚀刻该层，其中氙气的流速降低了光致抗蚀剂的扭曲。

2. 发明申请

WO2005020264A2 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：WO2005020264A2
公开(公告)日：2005-03-03
申请号：PCT/US2004027064
申请日：2004-08-20
申请人： LAM RES CORP , DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
发明人： DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
IPC分类号： H01J37/32 , H01J
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。腔室包括中心顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或者通过将至少一个等离子体激发频率传递到排除另一个等离子体激发频率的滤波器装置连接到参考电位频率。

3. 发明申请

WO2005022623B1 HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 审中-公开
标题翻译：使用各种频率的RF功率的调制的高比例比较
公开(公告)号：WO2005022623B1
公开(公告)日：2005-05-26
申请号：PCT/US2004025406
申请日：2004-08-06
申请人： LAM RES CORP , RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
发明人： RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。衬底被放置在处理室中，处理室能够提供第一频率的RF功率，不同于第一频率的第二频率以及不同于第一和第二频率的第三频率。向处理室提供蚀刻剂气体（408）。提供第一蚀刻步骤（412），其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供第二蚀刻步骤（416），其中第一频率，第二频率和第三频率处于不同的功率设置。可选地，还可以提供第三蚀刻步骤（420）。

4. 发明申请

WO2009085672A3 FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL 审中-公开
标题翻译：利用轮廓控制法制造硅结构和深硅蚀刻
公开(公告)号：WO2009085672A3
公开(公告)日：2009-09-03
申请号：PCT/US2008086722
申请日：2008-12-12
申请人： LAM RES CORP , CHEBI ROBERT , LIN FRANK , WINNICZEK JAROSLAW , CHEN WAN-LIN , MCDONNELL ERIN , ZHENG LILY , LASSIG STEPHAN , BOGART JEFF , RUSU CAMELIA
发明人： CHEBI ROBERT , LIN FRANK , WINNICZEK JAROSLAW , CHEN WAN-LIN , MCDONNELL ERIN , ZHENG LILY , LASSIG STEPHAN , BOGART JEFF , RUSU CAMELIA
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/02057 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
摘要翻译：提供了一种将特征蚀刻到具有稳态气体流动的硅层中的方法。提供包含含氧气体和含氟气体的蚀刻气体。从蚀刻气体提供等离子体。然后，停止蚀刻气体的流动。

5. 发明申请

WO2012154764A3 METHOD FOR ACHIEVING SMOOTH SIDE WALLS AFTER BOSCH ETCH PROCESS 审中-公开
标题翻译：在铺设过程之后实现平滑侧壁的方法
公开(公告)号：WO2012154764A3
公开(公告)日：2013-01-10
申请号：PCT/US2012036981
申请日：2012-05-09
申请人： LAM RES CORP , WINNICZEK JAROSLAW W , LIN FRANK Y , MILLER ALAN J , XU QING , HEO SEONGJUN , HAM JIN HWAN , YOON SANG JOON , RUSU CAMELIA
发明人： WINNICZEK JAROSLAW W , LIN FRANK Y , MILLER ALAN J , XU QING , HEO SEONGJUN , HAM JIN HWAN , YOON SANG JOON , RUSU CAMELIA
IPC分类号： B81C1/00 , C23F1/00 , H01L21/302
CPC分类号： H01L21/30655 , B81C1/00619 , B81C2201/0112 , H01L21/3086
摘要： A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.
摘要翻译：提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

6. 发明申请

WO2011126621A3 INORGANIC RAPID ALTERNATING PROCESS FOR SILICON ETCH 审中-公开
标题翻译：无机快速替代硅蚀刻工艺
公开(公告)号：WO2011126621A3
公开(公告)日：2012-01-05
申请号：PCT/US2011026509
申请日：2011-02-28
申请人： LAM RES CORP , ASO TSUYOSHI , RUSU CAMELIA
发明人： ASO TSUYOSHI , RUSU CAMELIA
IPC分类号： H01L21/3065
CPC分类号： H01L21/76898 , H01L21/30655
摘要： A method for etching features into a silicon substrate disposed below a mask in a plasma processing chamber is provided. The silicon substrate is etched through the mask comprising a plurality of cycles, wherein each cycle comprises a sidewall deposition phase and an etch phase. The sidewall deposition phase comprises providing a flow of sidewall inorganic deposition phase gas comprising a silicon containing compound gas and at least one of oxygen, nitrogen or NOx, into the plasma processing chamber, forming a plasma from the sidewall deposition phase gas in the plasma processing chamber, and stopping the flow of the sidewall deposition gas into the plasma processing chamber. The etch phase comprises, providing a flow of an etching gas comprising a halogen component, forming a plasma from the etching gas in the plasma processing chamber, and stopping the flow of the etching gas.
摘要翻译：提供了一种在等离子体处理室中将特征蚀刻到设置在掩模下方的硅衬底中的方法。通过包括多个周期的掩模蚀刻硅衬底，其中每个循环包括侧壁沉积阶段和蚀刻阶段。侧壁沉积阶段包括提供包含含硅化合物气体和氧，氮或NOx中的至少一种的侧壁无机沉积相气体流到等离子体处理室中，在等离子体处理中从侧壁沉积相气体形成等离子体并且阻止侧壁沉积气体流入等离子体处理室中。蚀刻阶段包括提供包括卤素组分的蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，并停止蚀刻气体的流动。

7. 发明申请

WO2012170249A3 USE OF SPECTRUM TO SYNCHRONIZE RF SWITCHING WITH GAS SWITCHING DURING ETCH 审中-公开
标题翻译：在ETCH期间使用与燃气切换同步射频切换的频谱
公开(公告)号：WO2012170249A3
公开(公告)日：2013-03-14
申请号：PCT/US2012039997
申请日：2012-05-30
申请人： LAM RES CORP , XU QING , RUSU CAMELIA , MCMILLIN BRIAN K , PATERSON ALEXANDER M
发明人： XU QING , RUSU CAMELIA , MCMILLIN BRIAN K , PATERSON ALEXANDER M
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动的沉积气体进入等离子体处理室。提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止蚀刻气体流入等离子体处理室。

8. 发明申请

WO2012170302A3 METHOD FOR PROVIDING HIGH ETCH RATE 审中-公开
标题翻译：提供高刻蚀速率的方法
公开(公告)号：WO2012170302A3
公开(公告)日：2013-02-07
申请号：PCT/US2012040523
申请日：2012-06-01
申请人： LAM RES CORP , XU QING , RUSU CAMELIA , WINNICZEK JAROSLAW W , LIN FRANK Y , MILLER ALAN J
发明人： XU QING , RUSU CAMELIA , WINNICZEK JAROSLAW W , LIN FRANK Y , MILLER ALAN J
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。每个循环包括沉积阶段和蚀刻阶段。沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理室。蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动的蚀刻气体进入等离子体处理室。

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