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1. 发明申请

WO2004049343A1 A METHOD AND DEVICE TO DETECT THE LIKELY ONSET OF THERMAL RELAXATION IN MAGNETIC DATA STORAGE DEVICES 审中-公开
标题翻译：检测磁数据存储设备中热松弛的方法和设备
公开(公告)号：WO2004049343A1
公开(公告)日：2004-06-10
申请号：PCT/IB2003/005018
申请日：2003-11-06
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILLIPS, Gavin, N. , BOEVE, Hans, M., B.
发明人： PHILLIPS, Gavin, N. , BOEVE, Hans, M., B.
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C29/50 , G11C2029/5002
摘要： Reference magnetic elements or bits with a range of magnetic volumes smaller than the minimum size used for actual data storage are written or patterned in the data storage device. The reference elements or bits have dimensions such that their magnetization will relax in a shorter time than that of the minimum expected relaxation time of the storage elements or bits. Probing of the magnetization of the reference elements or bits allows the detection of the probable onset of magnetization relaxation in the storage elements or bits therefore signaling that the re-writing (re-magnetizing) of the storage elements or bits is necessary. Such a scheme can be organized over rows, columns, or sectors.
摘要翻译：在数据存储装置中写入或图案化具有小于用于实际数据存储的最小尺寸的磁体积范围的参考磁性元件或位。参考元件或位具有使得它们的磁化在比存储元件或位的最小预期松弛时间更短的时间内松弛的尺寸。探测参考元件或位的磁化允许检测存储元件或位中磁化松弛的可能开始，从而表明存储元件或位的重写（重新磁化）是必要的。这样的方案可以按行，列或扇区进行组织。

2. 发明申请

WO2005104132A1 ELECTRONIC CIRCUIT WITH MEMORY FOR WHICH A THRESHOLD LEVEL IS SELECTED 审中-公开
标题翻译：具有选择阈值级别的存储器的电子电路
公开(公告)号：WO2005104132A1
公开(公告)日：2005-11-03
申请号：PCT/IB2005/051305
申请日：2005-04-21
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN ACHT, Victor, M., G. , MARSMAN, Albert, W , CHONG, Boon, K. , LAMBERT, Nicolaas , WOERLEE, Pierre, H. , IKKINK, Teunis, J. , STEK, Aalbert , BOEVE, Hans, M., B.. , PHILLIPS, Gavin, N.
发明人： VAN ACHT, Victor, M., G. , MARSMAN, Albert, W , CHONG, Boon, K. , LAMBERT, Nicolaas , WOERLEE, Pierre, H. , IKKINK, Teunis, J. , STEK, Aalbert , BOEVE, Hans, M., B.. , PHILLIPS, Gavin, N.
IPC分类号： G11C7/14
CPC分类号： G11C7/14 , G11C7/1006 , G11C2207/104 , G11C2207/2254 , G11C2211/5634
摘要： A memory (10) is organized as a matrix rows and columns of memory cell circuits (100) and comprises bit line conductors (12) coupled to rows of the memory cells (100). A sensing circuit (14) is coupled to the bit line conductors (12). The sensing circuit (14) is arranged to form respective data signals, each by comparing a respective signal from a plurality of the bit line conductors (12) with a reference level that is common for the bit line conductors (12). A reference level selection circuit (16) with inputs coupled to the plurality of bit line conductors (12) is arranged to control the reference level. The reference level selection circuit (16) selects the reference level dependent on respective analog signal levels on the plurality of the bit line conductors (12), so that analog signal levels from at least respective ones of the plurality of bit line conductors (12) lie on respective sides of the reference level.
摘要翻译：存储器（10）被组织为存储单元电路（100）的矩阵行和列，并且包括耦合到存储器单元（100）的行的位线导体（12）。感测电路（14）耦合到位线导体（12）。感测电路（14）被布置成通过将来自多个位线导体（12）的相应信号与位线导体（12）共用的基准电平进行比较来形成相应的数据信号。具有耦合到多个位线导体（12）的输入的参考电平选择电路（16）被布置成控制参考电平。参考电平选择电路（16）根据多个位线导体（12）上的相应模拟信号电平选择参考电平，使得来自多个位线导体（12）中的至少相应的模拟信号电平，位于参考水平的相应侧。

3. 发明申请

WO2004040565A2 PROCESSING SCHEME FOR DOMAIN EXPANSION ROM MEDIA 审中-公开
标题翻译：域扩展ROM介质的处理方案
公开(公告)号：WO2004040565A2
公开(公告)日：2004-05-13
申请号：PCT/IB2003/004443
申请日：2003-10-07
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILLIPS, Gavin, N.
发明人： PHILLIPS, Gavin, N.
IPC分类号： G11B11/00
CPC分类号： G11B11/10582 , G11B5/84 , G11B11/10584
摘要： The present invention relates to a domain expansion storage medium and processing method for processing a storage medium to obtain an improved readout performance. The magnetic properties of a storage layer (50) of the storage medium are altered by an ion beam projection lithography using a stencil mask to define magnetic domains and/or track patterns and/or servo patterns. Thereby, replication accuracy, speed and readout performance can be improved.
摘要翻译：本发明涉及用于处理存储介质以获得改进的读出性能的域扩展存储介质和处理方法。通过使用模板掩模的离子束投影光刻来改变存储介质的存储层（50）的磁性，以限定磁畴和/或轨迹图案和/或伺服图案。从而可以提高复制精度，速度和读出性能。

4. 发明申请

WO2004084203A1 SMOOTH HEAT SINK OR REFLECTOR LAYER FOR OPTICAL RECORD CARRIER 审中-公开
标题翻译：用于光记录载体的平滑散热或反射层
公开(公告)号：WO2004084203A1
公开(公告)日：2004-09-30
申请号：PCT/IB2004/050259
申请日：2004-03-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN KESTEREN, Hans, W. , VERSCHUREN, Coen, A. , PHILLIPS, Gavin, N.
发明人： VAN KESTEREN, Hans, W. , VERSCHUREN, Coen, A. , PHILLIPS, Gavin, N.
IPC分类号： G11B7/24
CPC分类号： G11B7/252 , G11B7/241 , G11B7/2433 , G11B7/2585 , G11B7/259 , G11B7/2595 , G11B2007/2571 , G11B2007/25713 , Y10T428/21
摘要： The present invention relates to an optical record carrier with a layer stack comprising a reflector or heat sink layer, a recording layer, and at least one ruthenium (Ru) interlayer arranged between said reflector or heat sink layer and said recording layer. Furthermore, the present invention relates to a method of manufacturing such a record carrier. In particular, Ru thin films may form a top or cover layer, a bottom or seed layer, or may be interleaved within reflector or heat sink layers. The Ru layer(s) lead to a modified microstructure and/or smoothness of the recording stack, so that the carrier-to-noise level can be improved during readout.
摘要翻译：本发明涉及一种光学记录载体，其具有包括反射器或散热层的层叠层，记录层以及布置在所述反射器或散热层与所述记录层之间的至少一个钌（Ru）中间层。此外，本发明涉及一种制造这种记录载体的方法。特别地，Ru薄膜可以形成顶部或覆盖层，底部或种子层，或者可以在反射器或散热器层内交错。 Ru层导致记录堆叠的改进的微结构和/或平滑度，使得在读出期间可以提高载波噪声水平。

5. 发明申请

WO2004040566A2 PROCESSING SCHEME FOR DOMAIN EXPANSION ROM MEDIA 审中-公开
标题翻译：域扩展ROM介质处理方案
公开(公告)号：WO2004040566A2
公开(公告)日：2004-05-13
申请号：PCT/IB2003/004444
申请日：2003-10-07
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILLIPS, Gavin, N.
发明人： PHILLIPS, Gavin, N.
IPC分类号： G11B11/00
CPC分类号： G11B5/732 , G11B5/66 , G11B5/7315 , G11B5/8404 , G11B11/10582 , G11B11/10584
摘要： The present invention relates to a domain expansion storage medium and processing method for processing a substrate (40) of such a storage medium with improved efficiency. The surface structure of a substrate of the storage medium is processed by an ion beam projection lithography using a stencil mask to define magnetic domains in a storage layer (50) and/or track patterns and/or servo patterns. Thereby, replication accuracy and speed can be improved.
摘要翻译：本发明涉及用于以提高的效率处理这种存储介质的衬底（40）的域扩展存储介质和处理方法。存储介质的衬底的表面结构通过使用模板掩模的离子束投影光刻来处理，以在存储层（50）和/或轨道图案和/或伺服图案中限定磁畴。从而可以提高复制的准确性和速度。

6. 发明申请

WO2004032145A2 PROGRAMMABLE MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：可编程磁记忆体设备
公开(公告)号：WO2004032145A2
公开(公告)日：2004-04-15
申请号：PCT/IB2003/004315
申请日：2003-09-30
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILLIPS, Gavin, N. , LENSSEN, Kars-Michiel, H.
发明人： PHILLIPS, Gavin, N. , LENSSEN, Kars-Michiel, H.
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11B5/00 , G11B5/488 , G11B5/4907 , G11B2005/0002 , G11B2005/0021
摘要： A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate writing device (21). The writing device provides at least one beam of radiation (26) for heating the electro-magnetic material at the bit locations to a programming temperature. The magnetic state of the bit locations is programmed by applying a magnetic field during said heating of selected bit locations via the beams of radiation. Hence the memory device provides a magnetic read-only memory (MROM) that cannot be (re-)programmed without the proper writing device.
摘要翻译：存储器件具有信息平面（32），用于存储在位阵列（31）处的电磁材料的磁状态下的数据位。该装置还具有与位位置对准的电磁传感器元件阵列（51）。信息平面（32）可通过单独的写入装置（21）进行编程或编程。写入装置提供至少一个辐射束（26），用于将位置处的电磁材料加热到编程温度。位位置的磁状态通过在通过辐射束的所选位位置的加热期间施加磁场来编程。因此，存储器件提供磁性只读存储器（MROM），其不能在没有适当的写入设备的情况下被编程（重新编程）。

7. 发明申请

WO2005050553A1 PROTECTED DATA-STORAGE DEVICES 审中-公开
标题翻译：保护数据存储设备
公开(公告)号：WO2005050553A1
公开(公告)日：2005-06-02
申请号：PCT/IB2004/052412
申请日：2004-11-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILLIPS, Gavin, N. , HENDRIKS, Robert, F., M. , KASTELIJN, Aukje, A., A. , DE HOOG, Thomas, J. , CHONG, Boon, K.
发明人： PHILLIPS, Gavin, N. , HENDRIKS, Robert, F., M. , KASTELIJN, Aukje, A., A. , DE HOOG, Thomas, J. , CHONG, Boon, K.
IPC分类号： G06K19/077
CPC分类号： G06K19/005 , G06K13/063 , G06K19/04 , G06K19/077
摘要： The invention relates to a data-storage device that comprises means for protecting a data-access part (2) against contamination and/or damage. Such a protected datastorage device comprises a carrier (1) that comprises the data-access part (2). The datastorage device further comprises a cover (3) that is movably attached to the carrier (1). The 5 data-access part (2) is protected against contamination and/or damage in that the cover (3) is brought near to or into contact with the data-access part (2) as long as the data-storage device is outside a controlled and protected environment.
摘要翻译：本发明涉及一种数据存储设备，其包括用于保护数据访问部分（2）免受污染和/或损坏的装置。这种受保护的数据存储设备包括包括数据访问部分（2）的载体（1）。数据存储装置还包括可移动地附接到载体（1）的盖（3）。 5数据访问部分（2）被保护免受污染和/或损坏，因为只要数据存储设备在外部，盖（3）被接近或接触数据访问部分（2）受控和受保护的环境。

8. 发明申请

WO2004027759A2 A MAGNETO-OPTICAL STORAGE MEDIUM 审中-公开
标题翻译：磁光存储介质
公开(公告)号：WO2004027759A2
公开(公告)日：2004-04-01
申请号：PCT/IB2003/003626
申请日：2003-08-08
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILLIPS, Gavin, N.
发明人： PHILLIPS, Gavin, N.
IPC分类号： G11B
CPC分类号： G11B11/10584 , G11B11/10586 , G11B11/10593
摘要： The invention relates to a magneto-optical storage medium (200) and specifically a domain expansion storage medium. The medium (200) comprises a magnetic storage layer (107) for long term information storage and a thereto magnetically coupled magnetic reproduction or read-out layer (111), wherein an enhanced magnetic domain may be generated during read out. The magnetic layers (107,111) are separated by a non-metallic or metallic, non-magnetic or magnetic layer (109) and at least one metal layer (201, 203), such as Palladium or Platinum, is located adjacent to the magnetic reproduction layer (111). Preferably this metal layer (201, 203) is located on each side of the magnetic reproduction layer (111). The metal layer(s) (201, 203) provides increased heat dissipation and Kerr effect thereby permitting increased data density of the magneto-optical storage medium (200).
摘要翻译：本发明涉及磁光存储介质（200），具体地涉及域扩展存储介质。介质（200）包括用于长期信息存储的磁存储层（107）和磁耦合磁性再现或读出层（111），其中在读出期间可能产生增强的磁畴。磁性层（107,111）由非金属或金属，非磁性或磁性层（109）分开，并且至少一个金属层（例如钯或铂）等位于邻近磁性再现层层（111）。优选地，该金属层（201,203）位于磁性再生层（111）的每一侧。金属层（201,203）提供增加的散热和克尔效应，从而允许增加磁光存储介质（200）的数据密度。

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