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1. 发明申请

WO2007004119A2 A METHOD OF MANUFACTURING A MEMS ELEMENT 审中-公开
标题翻译：制造MEMS元件的方法
公开(公告)号：WO2007004119A2
公开(公告)日：2007-01-11
申请号：PCT/IB2006/052109
申请日：2006-06-27
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , DEKKER, Ronald , LANGEREIS, Geert , POHLMANN, Hauke , DUEMLING, Martin
发明人： DEKKER, Ronald , LANGEREIS, Geert , POHLMANN, Hauke , DUEMLING, Martin
CPC分类号： B81C1/00182 , B81B2203/0118 , B81B2203/0315 , B81C1/00047 , B81C2201/0109
摘要： The device (100) comprises a substrate (10) of a semiconductor material with a first and an opposite second surface (1,2) and a microelectromechanical (MEMS) element (50) which is provided with a fixed and a movable electrode (52, 51) that is present in a cavity (30). One of the electrodes (51,52) is defined in the substrate (10). The movable electrode (51) is movable towards and from the fixed electrode (52) between a first gapped position and a second position. The cavity (30) is opened through holes (18) in the substrate (10) that are exposed on the second surface (2) of the substrate (10). The cavity (30) has a height that is defined by at least one post (15) in the substrate (10), which laterally substantially surrounds the cavity (15).
摘要翻译：装置（100）包括具有第一和相对的第二表面（1,2）和微机电（MEMS）元件（50）的半导体材料的衬底（10），该微机电（MEMS）元件设置有固定和可移动电极，51），其存在于空腔（30）中。电极（51,52）中的一个限定在基板（10）中。可移动电极（51）可以在第一间隙位置和第二位置之间朝向固定电极（52）移动。空腔（30）通过暴露在基板（10）的第二表面（2）上的基板（10）中的通孔（18）。腔（30）具有由衬底（10）中的至少一个柱（15）限定的高度，其横向基本上围绕空腔（15）。

2. 发明申请

WO2007057814A2 ELECTRONIC DEVICE COMPRISING A MEMS ELEMENT 审中-公开
标题翻译：包含MEMS元件的电子装置
公开(公告)号：WO2007057814A2
公开(公告)日：2007-05-24
申请号：PCT/IB2006/054142
申请日：2006-11-07
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , DEKKER, Ronald , POHLMANN, Hauke , DUEMLING, Martin
发明人： DEKKER, Ronald , POHLMANN, Hauke , DUEMLING, Martin
IPC分类号： B81C5/00
CPC分类号： B81C1/00293 , B81C2203/0145 , H01L2224/13
摘要： The device (100) comprises a MEMS element (60) in a cavity (30) that is closed by a packaging portion (17) on a second side (2) of the substrate (10). Contact pads (25) are defined on a flexible resin layer (13) on an opposite first side (1) of the substrate. Electrical connections (32) extend through the resin layer (13) to at least one element of the device (100). The device (100) is suitably made with the use of a temporary carrier (42), and opening of etching holes (18) from the second side (2) of the substrate (10).
摘要翻译：装置（100）包括位于空腔（30）中的MEMS元件（60），其由基板（10）的第二侧（2）上的封装部分（17）封闭。接触垫（25）被限定在衬底的相对的第一侧（1）上的柔性树脂层（13）上。电连接（32）穿过树脂层（13）延伸到装置（100）的至少一个元件。装置（100）适当地使用临时载体（42）制造，并且从衬底（10）的第二侧（2）开启蚀刻孔（18）。

3. 发明申请

WO2003103041A3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：WO2003103041A3
公开(公告)日：2003-12-11
申请号：PCT/IB2003/002084
申请日：2003-06-02
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N.V. , SCHNITT, Wolfgang , POHLMANN, Hauke
发明人： SCHNITT, Wolfgang , POHLMANN, Hauke
IPC分类号： H01L21/84
摘要： To refine a semiconductor device (100), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer (10) made of a dielectric material; at least one silicon substrate (20) arranged on said isolating layer (10); at least one component (30) integrated in the silicon substrate (20), which component has at least one slightly doped zone (34); as well as at least a first, in particular planar, metallization region (40) arranged between the isolating layer (10) and the component (30), in particular between the isolating layer (10) and the slightly doped zone (34) of the component (30), as well as a method of manufacturing at least one semiconductor device (100) in such a manner that trouble-free operation also of slightly doped components (30), such as pnp transistors, is guaranteed in a SOI process transferred onto the insulator, it is proposed that at least a second, in particular planar, metallization region (42) is arranged on the side of the silicon substrate (20) facing away from the isolating layer (10), in the area of the component (30), particularly in the area of the slightly doped zone (34) of the component (30).

4. 发明申请

WO2003103041A2 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2003103041A2
公开(公告)日：2003-12-11
申请号：PCT/IB2003/002084
申请日：2003-06-02
申请人： PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , KONINKLIJKE PHILIPS ELECTRONICS N.V. , SCHNITT, Wolfgang , POHLMANN, Hauke
发明人： SCHNITT, Wolfgang , POHLMANN, Hauke
IPC分类号： H01L21/84
CPC分类号： H01L29/66265 , H01L21/76264 , H01L29/7317
摘要： To refine a semiconductor device (100), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer (10) made of a dielectric material; at least one silicon substrate (20) arranged on said isolating layer (10); at least one component (30) integrated in the silicon substrate (20), which component has at least one slightly doped zone (34); as well as at least a first, in particular planar, metallization region (40) arranged between the isolating layer (10) and the component (30), in particular between the isolating layer (10) and the slightly doped zone (34) of the component (30), as well as a method of manufacturing at least one semiconductor device (100) in such a manner that trouble-free operation also of slightly doped components (30), such as pnp transistors, is guaranteed in a SOI process transferred onto the insulator, it is proposed that at least a second, in particular planar, metallization region (42) is arranged on the side of the silicon substrate (20) facing away from the isolating layer (10), in the area of the component (30), particularly in the area of the slightly doped zone (34) of the component (30).
摘要翻译：为了精制半导体器件（100），特别是一种由电介质材料制成的至少一个绝缘层（10）的半导体器件（100）。布置在所述隔离层（10）上的至少一个硅衬底（20）; 集成在硅衬底（20）中的至少一个组件（30），该组件具有至少一个轻掺杂区域（34）; 以及布置在隔离层（10）和部件（30）之间，特别是隔离层（10）和轻微掺杂区域（34）之间的至少第一，特别是平面的金属化区域（40）组件（30）以及制造至少一个半导体器件（100）的方法，使得在SOI工艺中保证轻掺杂元件（30）（诸如pnp晶体管）的无故障操作转移到绝缘体上，建议在硅衬底（20）背离绝缘层（10）的至少一个第二平坦的金属化区域（42）上布置在（30），特别是在组件（30）的轻掺杂区域（34）的区域中。

5. 发明申请

WO2010136986A3 MEMS ELEMENT 审中-公开
公开(公告)号：WO2010136986A3
公开(公告)日：2010-12-02
申请号：PCT/IB2010/052348
申请日：2010-05-26
申请人： NXP B.V. , POHLMANN, Hauke , DEKKER, Ronald , MUELLER, Joerg , DUEMLING, Martin
发明人： POHLMANN, Hauke , DEKKER, Ronald , MUELLER, Joerg , DUEMLING, Martin
IPC分类号： B81C1/00 , H03H3/007
摘要： A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.

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