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1. 发明申请

WO2003067665A3 CELLULAR MOSFET DEVICES AND THEIR MANUFACTURE 审中-公开
公开(公告)号：WO2003067665A3
公开(公告)日：2003-08-14
申请号：PCT/IB2003/000219
申请日：2003-01-23
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PEAKE, Steven, T. , ROGERS, Christopher, M.
发明人： PEAKE, Steven, T. , ROGERS, Christopher, M.
IPC分类号： H01L29/78
摘要： A cellular MOSFET device has a cellular area (CA) comprising active MOSFET cells, and one or more Schottky diode areas (SA) accommodated within a deep end region (15) at a lateral boundary of this cellular area (CA). This deep end region (150) is laterally divided so as to accommodate the diode area (SA) therein. A diode portion (14d) of the first conductivity type of the drain region (14) extends upwardly through the laterally-divided deep end region (150) that is of the second conductivity type. The Schottky barrier (100) formed with this diode portion (14d) terminates laterally in the laterally-divided portions (150f) of the deep end region (150) which serve as a guard region and field-relief region for the Schottky diode.

2. 发明申请

WO2002089195A2 TRENCH-GATE SEMICONDUCTOR DEVICES AND THEIR MANUFACTURE 审中-公开
标题翻译： TRENCH-GATE半导体器件及其制造
公开(公告)号：WO2002089195A2
公开(公告)日：2002-11-07
申请号：PCT/IB2002/001375
申请日：2002-04-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： PEAKE, Steven, T. , PETKOS, Georgios , FARR, Robert, J. , ROGERS, Christopher, M. , GROVER, Raymond, J. , FORBES, Peter
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/41766 , H01L29/42368 , H01L29/6634 , H01L29/66348 , H01L29/66727 , H01L29/66848
摘要： Compact trench-gate semiconductor devices, for example a cellular power MOSFET with sub-micron pitch (Yc), are manufactured with self-aligned techniques that use sidewall spacers (52) in different ways. The trench-gate (11) is accommodated in a narrow trench (20) that is etched via a narrow window (52b) defined by the spacers (52) at sidewalls of a wider window (51a) of a mask (51) at the body surface (10a). The spacers (52) permit a source region (13) adjacent to the trench-gate (11) and an insulating overlayer (18) over the trench-gate (11) to be self-aligned to this narrow trench (20). The overlayer (18), which defines a contact window (18a) for a source electrode (33), is provided in a simple but reproducible manner by deposition and etch-back, after removing the spacers (52). Its overlap (y4, y4') with the body surface (10a) is well-defined, so reducing a short-circuit risk between the source electrode (33) and the trench-gate (11). Furthermore, implantation of the source region (13) is facilitated, and a channel-accommodating region (15) can also be provided using a high energy implant (61) after providing the insulating overlayer (18).
摘要翻译：紧凑型沟槽栅极半导体器件（例如具有亚微米间距（Yc）的蜂窝功率MOSFET）以具有以不同方式使用侧壁间隔物（52）的自对准技术制造。沟槽栅极（11）容纳在窄沟槽（20）中，所述窄沟槽（20）经由位于掩模（51）的较宽窗口（51a）的侧壁处的间隔物（52）限定的窄窗口（52b）被蚀刻身体表面（10a）。间隔物（52）允许与沟槽栅极（11）相邻的源极区域（13）和沟槽栅极（11）之上的绝缘覆盖层（18）与该窄沟槽（20）自对准。限定用于源极（33）的接触窗（18a）的覆盖层（18）在去除间隔物（52）之后以简单但可重复的方式通过沉积和回蚀来提供。其与体表面（10a）的重叠（y4，y4'）是明确的，因此降低了源电极（33）和沟槽栅极（11）之间的短路风险。此外，源区域（13）的植入便利，并且在提供绝缘覆层（18）之后，也可以使用高能量注入（61）来提供沟道容纳区域（15）。

3. 发明申请

WO2002089196A3 TRENCH-GATE SEMICONDUCTOR DEVICES AND THEIR MANUFACTURE 审中-公开
公开(公告)号：WO2002089196A3
公开(公告)日：2002-11-07
申请号：PCT/IB2002/001377
申请日：2002-04-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： PEAKE, Steven, T. , PETKOS, Georgios , FARR, Robert, J. , ROGERS, Christopher, M. , GROVER, Raymond, J. , FORBES, Peter
IPC分类号： H01L21/336
摘要： Compact trench-gate semiconductor devices, for example a cellular power MOSFET with sub-micron pitch (Yc), are manufactured with self-aligned techniques that use sidewall spacers (52) in different ways. Thereby, the source region (13) and a contact window (18a) for a source electrode (33) can be self-aligned to a narrow trench (20) containing the trench-gate (11). Thereby, the channel-accommodating region (15) can also be provided after forming the trench-gate (11), and with very good control of its doping concentration (Na; p) adjacent to the trench (20). To achieve this control, its dopant is provided after removing the spacers (52) from the mask (51) so as to form a doping window (51b), which may also be used for the source dopant, adjacent to the trench-gate (11). A high energy dopant implant (61) or other doping process provides this channel dopant adjacent to the trench (20) and extending laterally below the mask (51,51n). A remarkably uniform doping profile can be achieved beneath the doping window (51b) and beneath the mask (51,51n). By using a high ion energy and high dose, the dopant ions (61) at the doping window (51b) can be laterally scattered below the mask (51) while those at the mask (51) penetrate there-through to be implanted in the underlying portion of the body (100).

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