会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • HIGH-DENSITY ELECTRONIC MODULES, PROCESS AND PRODUCT
    • 高密度电子模块,工艺和产品
    • WO1989004113A1
    • 1989-05-05
    • PCT/US1987002746
    • 1987-10-20
    • IRVINE SENSORS CORPORATION
    • IRVINE SENSORS CORPORATIONGO, Tiong, C.
    • H05K07/10
    • H05K7/023
    • A high-density electronic module (24) is disclosed, which is suitable for use as a DRAM, SRAM, ROM, logic unit, arithmetic unit, etc. It is formed by stacking integrated-circuit chips (22), each of which carries integrated circuitry. The chips are glued together, with their leads along one edge, so that all the leads of the stack are exposed on an access plane (28). Where heat extraction augmentation is needed, additional interleaved layers are included in the stacks which have high thermal conductivity, and are electrical insulators. These interleaved layers may carry rerouting electrical conductors. Bonding bumps (31 and 34) are formed at appropriate points on the access plane. A supporting substrate (26), formed of light transparent material, such as silicon, is provided with suitable circuitry and bonding bumps (38 and 42) on its face. A layer of insulation is applied to either the access plane or substrate face, preferably the latter. The bonding bumps on the insulation-carrying surface are formed after the insulation has been applied. The substrate face is placed on the access plane of the stack, their bonding bumps are microscopically aligned, and then bonded together under heat and/or pressure. A layer of thermally conductive (but electrically non-conductive) adhesive material is inserted between the substrate and stack. The substrate and stack combination is then placed and wire bonded in a protective container having leads extending therethrough for external connection.
    • 公开了一种适用于DRAM,SRAM,ROM,逻辑单元,运算单元等的高密度电子模块(24)。它集成了集成电路芯片(22),每个集成电路芯片 集成电路。 芯片被胶合在一起,其引线沿着一个边缘,使得堆叠的所有引线暴露在访问平面(28)上。 在需要增加热量的情况下,在具有高导热性的堆叠中包括额外的交错层,并且是电绝缘体。 这些交错层可以承载重新路由的电导体。 接合凸块(31和34)形成在接近平面上的适当点处。 由诸如硅的透光材料形成的支撑衬底(26)在其表面上设置有合适的电路和接合凸块(38和42)。 绝缘层被施加到接入面或衬底面,优选后者。 在施加绝缘体之后,形成绝缘承载表面上的接合凸块。 将基板面放置在堆叠的存取平面上,将它们的结合凸块微观对准,然后在加热和/或压力下粘合在一起。 一层导热(但不导电)的粘合剂材料插入在基片和叠层之间。 然后将衬底和堆叠组合放置并且线接合在具有延伸穿过其中的引线的保护容器中用于外部连接。
    • 7. 发明申请
    • FABRICATING ELECTRONIC CIRCUITRY UNIT CONTAINING STACKED IC LAYERS HAVING LEAD REROUTING
    • 制造电子电路单元包含堆积层叠层
    • WO1993000703A1
    • 1993-01-07
    • PCT/US1992005348
    • 1992-06-24
    • IRVINE SENSORS CORPORATION
    • IRVINE SENSORS CORPORATIONGO, Tiang, C. +diMINIHAN, Joseph, A.
    • H01L21/52
    • H01L25/50H01L23/525H01L23/528H01L25/0657H01L2225/06524H01L2225/06527H01L2225/06551H01L2225/06555H01L2225/06593H01L2225/06596H01L2924/0002H01L2924/3011H01L2924/00
    • A process and product are disclosed which apply advanced concepts of z-technology to the field of dense electronic packages. Starting with standard chip-containing silicon wafers (20), modification procedures are followed which create IC chips (38) having second level metal conductors (30) on top of passivation (52) (which covers the original silicon (48) and its aluminum or other metallization (44). The metal of the second level conductors (30) is different from and functions better for electrical conduction than the metallization included in the IC circuitry. The modified chips (38) are cut from the wafers (20), and then stacked to form multilayer IC devices (60). A stack has one or more access planes (64). After stacking, and before applying metallization on the access plane, a selective etching step removes any aluminum (or other material) which might interfere with the metallization formed on the access plane. Metal terminal pads (92) are formed in contact with the terminals of the second level conductors (30) on the stacked chips. The pads and terminals are formed of the same metallic material in order to maximize T-connection conducting efficiency.
    • 公开了一种将先进技术应用于密集电子封装领域的工艺和产品。 从含标准芯片的硅晶片(20)开始,按照修改步骤,其制造在钝化(52)(其覆盖原始硅(48)及其铝的顶部上具有第二级金属导体(30)的IC芯片(38) 或其他金属化(44),所述第二电平导体(30)的金属与包括在所述IC电路中的金属化不同于并且具有更好的导电功能,所述改性芯片(38)从晶片(20)切割, 然后堆叠以形成多层IC器件(60),堆叠具有一个或多个访问平面(64),堆叠之后,并且在接触平面上施加金属化之前,选择性蚀刻步骤去除可能的任何铝(或其他材料) 金属端子焊盘(92)形成为与堆叠的芯片上的第二层导体(30)的端子接触,焊盘和端子由相同的金属材料按顺序形成 以最大化T连接导通效率。
    • 8. 发明申请
    • THERMAL IMAGER INCORPORATING SENSOR WITHIN ELECTRONICS MODULE
    • 热像仪在电子模块中配合传感器
    • WO1986006214A1
    • 1986-10-23
    • PCT/US1986000688
    • 1986-04-04
    • IRVINE SENSORS CORPORATION
    • IRVINE SENSORS CORPORATIONCARSON, John, C.CLARK, Stewart, A.
    • H01L27/14
    • H04N5/33H01L27/14649H04N3/09
    • A thermal imaging system in which infrared radiation (56) from the viewed scene is transmitted to a two-dimensional detector array carried on the focal plane (52) of an optical/electronics module (54) which has embedded in it amplifying, filtering and multiplexing circuitry utilizing MOSFET transistors. The module is located inside the cooling device (62). Cooling requirements depend on the alternatives (a) of using detectors responsive to wavelengths in the 3.0 to 5.0 micron range, which require less cooling, or (b) of using detectors responsive to wavelengths in the 8.0 to 12.0 micron range, which require liquid nitrogen cooling. The two-dimensional detector array may be combined with a limited scanning, called ''nutation'', which causes each detector to view a plurality of pixels in the incoming infrared radiation.
    • 一种热成像系统,其中来自所观看场景的红外辐射(56)被传输到在嵌入其中的光/电子模块(54)的焦平面(52)上承载的二维检测器阵列放大,滤波和 利用MOSFET晶体管的复用电路。 模块位于冷却装置(62)的内部。 冷却要求取决于使用响应于3.0至5.0微米范围波长的检测器的替代方案(a),其需要较少的冷却,或(b)使用响应于8.0至12.0微米范围内的波长的检测器,这些检测器需要液氮 冷却。 二维检测器阵列可以与受限扫描组合,称为“章动”,其使得每个检测器观察入射的红外辐射中的多个像素。