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1. 发明申请

WO2013067201A3 SYSTEM ARCHITECTURE FOR PLASMA PROCESSING SOLAR WAFERS 审中-公开
标题翻译：等离子体处理太阳能波束的系统架构
公开(公告)号：WO2013067201A3
公开(公告)日：2014-12-04
申请号：PCT/US2012063090
申请日：2012-11-01
申请人： INTEVAC INC , CHO YOUNG KYU , JANAKIRAMAN KARTHIK , BLUCK TERRY , KEDLAYA DIWAKAR
发明人： CHO YOUNG KYU , JANAKIRAMAN KARTHIK , BLUCK TERRY , KEDLAYA DIWAKAR
IPC分类号： H01L21/687
CPC分类号： H01L31/18
摘要： A system for plasma processing of wafers at high throughput, particularly suitable for processing solar cells. A loading station has a loading conveyor, a loading transport mechanism, and a chuck loading station accepting transportable electrostatic chucks, wherein the loading transport mechanism is configured to remove wafers from the conveyor and place them on the transportable electrostatic chucks. The transportable chuck is delivered to at least one processing chamber to perform plasma processing of wafers. An unloading station has an unloading conveyor, an unloading transport mechanism, and a chuck unloading station accepting the transportable electrostatic chucks from the processing chamber, wherein the unloading transport mechanism is configured to remove wafers from the transportable electrostatic chucks and place them on the conveyor. A chuck return module configured for transporting the transportable electrostatic chucks from the chuck unloading station to the chuck loading station.
摘要翻译：一种用于在高通量下等离子体处理晶片的系统，特别适用于处理太阳能电池。装载站具有装载传送装置，装载传送机构和接收可移动静电卡盘的卡盘装载站，其中装载传送机构构造成从输送机移除晶片并将它们放置在可运送的静电卡盘上。可移动卡盘被输送到至少一个处理室以执行晶片的等离子体处理。卸载站具有卸载输送机，卸载输送机构和从处理室接收可移动静电卡盘的卡盘卸载站，其中卸载输送机构构造成从可移动静电卡盘移除晶片并将其放置在输送机上。卡盘返回模块，其构造成将可移动静电卡盘从卡盘卸载站运送到卡盘装载站。

2. 发明申请

WO2012092301A2 METHOD AND APPARATUS FOR MASKING SUBSTRATES FOR DEPOSITION 审中-公开
标题翻译：用于沉积底物的方法和装置
公开(公告)号：WO2012092301A2
公开(公告)日：2012-07-05
申请号：PCT/US2011067438
申请日：2011-12-27
申请人： INTEVAC INC , BERGER ALEXANDER J , BLUCK TERRY , SHAH VINAY , HUANG JUDY , JANAKIRAMAN KARTHIK , NGUYEN CHAU T , STUMBO GREG
发明人： BERGER ALEXANDER J , BLUCK TERRY , SHAH VINAY , HUANG JUDY , JANAKIRAMAN KARTHIK , NGUYEN CHAU T , STUMBO GREG
IPC分类号： H01L31/18 , B05B1/00 , B05B15/00
CPC分类号： H01L31/1876 , B05D1/322 , B05D1/327 , C23C14/042 , C23C16/042 , Y02E10/50 , Y02P70/521
摘要： Disclosed are methods and apparatus for masking of substrates for deposition, and subsequent lifting of the mask with deposited material. Masking materials are utilized that can be used in high temperatures and vacuum environment. The masking material has minimal outgassing once inside a vacuum chamber and withstand the temperatures during deposition process. The mask is inkjeted over the wafers and, after deposition, removed using agitation, such as ultrasonic agitation, or using laser burn off.
摘要翻译：公开了用于掩蔽用于沉积的基底的方法和装置，以及随后用沉积材料提起掩模。使用可在高温和真空环境中使用的遮蔽材料。掩模材料一旦在真空室内就具有最小的除气，并能承受沉积过程中的温度。将掩模喷涂在晶片上，并且在沉积之后，使用搅拌（例如超声波搅拌）或使用激光烧掉来除去掩模。

3. 发明申请

WO2005052998A3 GAS DISTRIBUTION SHOWERHEAD FEATURING EXHAUST APERTURES 审中-公开
标题翻译：气体分布式淋浴器特色排气口
公开(公告)号：WO2005052998A3
公开(公告)日：2007-11-01
申请号：PCT/US2004039065
申请日：2004-11-19
申请人： APPLIED MATERIALS INC , GIANOULAKIS STEVEN , JANAKIRAMAN KARTHIK
发明人： GIANOULAKIS STEVEN , JANAKIRAMAN KARTHIK
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455
CPC分类号： C23C16/455 , C23C16/4412 , C23C16/45565
摘要： Embodiments in accordance with the present invention relate to systems and methods for distributing process gases over the surface of a workpiece. In accordance with one embodiment of the present invention, process gases are flowed from a source to a workpiece surface through a gas distribution showerhead defining a plurality of orifices. The gas distribution showerhead also features a plurality of exhaust orifices for removing material above the wafer surface. The supplemental exhaust afforded by the showerhead exhaust orifices serves to reduce variations in gas velocity attributable to radial flow across the wafer surface, thereby enhancing the uniformity between resulting processing at the wafer edge and center. The ratio of the distribution and exhaust aperture areas may vary or remain constant across the faceplate. Additionally, the size and number of distribution and exhaust apertures may be selected to optimize gas distribution across the semiconductor wafer surface.
摘要翻译：根据本发明的实施例涉及用于在工件的表面上分配工艺气体的系统和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的气体分配喷头从源流向工件表面。气体分配喷头还具有用于去除晶片表面之上的材料的多个排气孔。由喷头排气孔提供的补充排气用于减少归因于晶片表面上的径向流动的气体速度的变化，由此增强晶片边缘和中心处的所得到的处理之间的均匀性。分布和排放孔径面积的比例可能在面板上变化或保持恒定。此外，可以选择分配和排气孔径的尺寸和数量以优化半导体晶片表面上的气体分布。

4. 发明申请

WO2009117173A4 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
标题翻译：等离子体燃烧室中的接地平台
公开(公告)号：WO2009117173A4
公开(公告)日：2009-11-12
申请号：PCT/US2009031966
申请日：2009-01-26
申请人： APPLIED MATERIALS INC , JANAKIRAMAN KARTHIK , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , FODOR MARK A , DUBOIS DALE R , BANSAL AMIT , AYOUB MOHAMAD , JUCO ELLER Y , SIVARAMAKRISHNAN VISWESWAREN , M SAAD HICHEM
发明人： JANAKIRAMAN KARTHIK , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , FODOR MARK A , DUBOIS DALE R , BANSAL AMIT , AYOUB MOHAMAD , JUCO ELLER Y , SIVARAMAKRISHNAN VISWESWAREN , M SAAD HICHEM
IPC分类号： H01L21/205 , H01L21/26 , H01L21/30 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译：提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。在一个实施例中，成形电极嵌入在基板支撑件中以在腔室内提供具有径向和轴向分量的电场。在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。另外，一个或多个电极可以嵌入在腔室侧壁中。

5. 发明申请

WO2009111395A3 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进密度和阶跃覆盖率沉积非晶碳膜的方法
公开(公告)号：WO2009111395A3
公开(公告)日：2009-10-29
申请号：PCT/US2009035726
申请日：2009-03-02
申请人： APPLIED MATERIALS INC , PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
发明人： PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
IPC分类号： H01L21/205
CPC分类号： C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：一种用于在衬底上沉积无定形碳层的方法包括以下步骤：将衬底定位在腔室中;将烃源引入处理腔室;将重稀有气体引入处理腔室;以及在处理腔室中产生等离子体。重稀有气体选自氩，氪，氙及其组合，稀有气体的摩尔流率大于烃源的摩尔流率。可以包括后沉积终止步骤，其中烃源和惰性气体的流动停止并且等离子体在腔室中保持一段时间以从其中去除颗粒。

6. 发明申请

WO2007097822A3 ENHANCEMENT OF REMOTE PLASMA SOURCE CLEAN FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的远程等离子体源清洁的增强
公开(公告)号：WO2007097822A3
公开(公告)日：2008-02-07
申请号：PCT/US2006061154
申请日：2006-11-21
申请人： APPLIED MATERIALS INC , NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
发明人： NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要翻译：提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。反应性物质由含氧气体如O 2和/或含卤素气体如NF 3产生。在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

7. 发明申请

WO2010008747A3 BIG FOOT LIFT PIN 审中-公开
标题翻译：大脚提升针
公开(公告)号：WO2010008747A3
公开(公告)日：2010-03-18
申请号：PCT/US2009047690
申请日：2009-06-17
申请人： APPLIED MATERIALS INC , DU BOIS DALE R , FODOR MARK A , JANAKIRAMAN KARTHIK , ROCHA-ALVAREZ JUAN CARLOS
发明人： DU BOIS DALE R , FODOR MARK A , JANAKIRAMAN KARTHIK , ROCHA-ALVAREZ JUAN CARLOS
IPC分类号： H01L21/683 , H01L21/205 , H01L21/687
CPC分类号： H01L21/68742
摘要： Embodiments described herein generally provide a lift pin assembly having increased wafer placement accuracy, repeatability, reliability, and corrosion resistance. In one embodiment, a lift pin assembly for positioning a substrate relative to a substrate support is provided. The lift pin assembly comprises a lift pin comprising a pin shaft, a pin head coupled with a first end of the pin shaft for supporting the substrate, and a shoulder coupled with a second end of the pin shaft. The lift pin assembly further comprises a cylindrical body slidably coupled with the pin shaft and a locking pin for preventing the cylindrical body from sliding along the shaft, wherein the shoulder has a through-hole dimensioned to accommodate the locking pin.
摘要翻译：本文描述的实施例通常提供具有增加的晶片放置精度，重复性，可靠性和耐腐蚀性的提升销组件。在一个实施例中，提供了一种用于相对于衬底支撑件定位衬底的提升销组件。提升销组件包括提升销，该提升销包括销轴，与销轴的第一端联接以支撑衬底的销头，以及与销轴的第二端联接的肩部。提升销组件还包括与销轴可滑动地连接的圆柱形主体和用于防止圆柱形主体沿着轴滑动的锁定销，其中肩部具有尺寸适于容纳锁定销的通孔。

8. 发明申请

WO2009134588A3 NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于等离子体加工室的不锈钢板
公开(公告)号：WO2009134588A3
公开(公告)日：2010-03-18
申请号：PCT/US2009039674
申请日：2009-04-06
申请人： APPLIED MATERIALS INC , ZHOU JIANHUA , PADHI DEENESH , JANAKIRAMAN KARTHIK , CHENG SIU F , YU HANG , SARIPALLI YOGANAND N , SUMMAN TERSEM
发明人： ZHOU JIANHUA , PADHI DEENESH , JANAKIRAMAN KARTHIK , CHENG SIU F , YU HANG , SARIPALLI YOGANAND N , SUMMAN TERSEM
IPC分类号： H05H1/34 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/5096 , H01J37/32541 , Y10T117/10
摘要： A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive faceplate and the electrode by varying a distance between the conductive faceplate and the electrode.
摘要翻译：一种用于在等离子体工艺期间调节局部等离子体密度的方法和装置。一个实施例提供一种电极组件，其包括具有非平面表面的导电面板。非平面表面被配置为在处理期间面向衬底，并且设置导电面板使得非平面表面与具有电极的衬底支撑件相对。导电面板和基板支撑件形成等离子体体积。非平面被配置为通过改变导电面板和电极之间的距离来调节导电面板和电极之间的电场。

9. 发明申请

WO2010008827A2 PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION 审中-公开
标题翻译：用于低温PECVD应用的PEDESTAL加热器
公开(公告)号：WO2010008827A2
公开(公告)日：2010-01-21
申请号：PCT/US2009048253
申请日：2009-06-23
申请人： APPLIED MATERIALS INC , ZHOU JIANHUA , YAP LIPYEOW , SKLYAR DMITRY , AYOUB MOHAMAD , JANAKIRAMAN KARTHIK , ROCHA-ALVAREZ JUAN CARLOS
发明人： ZHOU JIANHUA , YAP LIPYEOW , SKLYAR DMITRY , AYOUB MOHAMAD , JANAKIRAMAN KARTHIK , ROCHA-ALVAREZ JUAN CARLOS
IPC分类号： H01L21/683 , H01L21/205 , H01L21/687
CPC分类号： C23C16/4586 , C23C16/46 , C23C16/52 , H01L21/67103 , H01L21/68792
摘要： A method and apparatus for providing power to a heated support pedestal is provided. In one embodiment, a process kit is described. The process kit includes a hollow shaft made of a conductive material coupled to a substrate support at one end and a base assembly at an opposing end, the base assembly adapted to couple to a power box disposed on a semiconductor processing tool. In one embodiment, the base assembly comprises at least one exposed electrical connector disposed in an insert made of a dielectric material, such as a plastic resin.
摘要翻译：提供了用于向加热的支撑基座提供动力的方法和装置。在一个实施例中，描述了处理套件。该处理套件包括由导电材料制成的空心轴，该空心轴在一端耦合到衬底支撑件并且在相对端耦合到基底组件，该基底组件适于耦合到布置在半导体处理工具上的功率盒。在一个实施例中，基座组件包括至少一个暴露的电连接器，该暴露的电连接器设置在由诸如塑料树脂的介电材料制成的插入件中。

10. 发明申请

WO2005052998A9 GAS DISTRIBUTION SHOWERHEAD FEATURING EXHAUST APERTURES 审中-公开
标题翻译：气体分布式淋浴器特色排气口
公开(公告)号：WO2005052998A9
公开(公告)日：2009-05-07
申请号：PCT/US2004039065
申请日：2004-11-19
申请人： APPLIED MATERIALS INC , GIANOULAKIS STEVEN , JANAKIRAMAN KARTHIK
发明人： GIANOULAKIS STEVEN , JANAKIRAMAN KARTHIK
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455
CPC分类号： C23C16/455 , C23C16/4412 , C23C16/45565
摘要： Embodiments in accordance with the present invention relate to systems and methods for distributing process gases over the surface of a workpiece. In accordance with one embodiment of the present invention, process gases (312) are flowed from a source to a workpiece surface (320) through a gas distribution showerhead (310) defining a plurality of orifices. The gas distribution showerhead also features a plurality of exhaust orifices for removing material (312) above the wafer surface. The supplemental exhaust afforded by the showerhead exhaust orifices serves to reduce variations in gas velocity attributable to radial flow across the wafer surface, thereby enhancing the uniformity between resulting processing at the wafer edge and center. The ratio of the distribution and exhaust aperture areas may vary or remain constant across the faceplate. Additionally, the size and number of distribution and exhaust apertures may be selected to optimize gas distribution across the semiconductor wafer surface.
摘要翻译：根据本发明的实施例涉及用于在工件的表面上分配工艺气体的系统和方法。根据本发明的一个实施例，工艺气体（312）通过限定多个孔的气体分配喷头（310）从源流向工件表面（320）。气体分配喷头还具有多个用于去除晶片表面上方的材料（312）的排气孔。由喷头排气孔提供的补充排气用于减少归因于晶片表面上的径向流动的气体速度的变化，由此增强晶片边缘和中心处的所得到的处理之间的均匀性。分布和排放孔径面积的比例可能在面板上变化或保持恒定。此外，可以选择分配和排气孔径的尺寸和数量以优化半导体晶片表面上的气体分布。

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