基本信息:
- 专利标题： ENHANCEMENT OF REMOTE PLASMA SOURCE CLEAN FOR DIELECTRIC FILMS
- 专利标题（中）：用于电介质膜的远程等离子体源清洁的增强
- 申请号：PCT/US2006061154 申请日：2006-11-21
- 公开(公告)号：WO2007097822A3 公开(公告)日：2008-02-07
- 发明人： NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
- 申请人： APPLIED MATERIALS INC , NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
- 专利权人： APPLIED MATERIALS INC,NOWAK THOMAS,YIM KANG SUB,TANG SUM-YEE BETTY,LEE KWANGDUK DOUGLAS,NGUYEN VU NGOC TRAN,SINGLETON DENNIS,SEAMONS MARTIN JAY,JANAKIRAMAN KARTHIK,BALASUBRAMANIAN GANESH,AYOUB MOHAMED,YEH WENDY H,DEMOS ALEXANDROS T,M SAAD HICHEM
- 当前专利权人： APPLIED MATERIALS INC,NOWAK THOMAS,YIM KANG SUB,TANG SUM-YEE BETTY,LEE KWANGDUK DOUGLAS,NGUYEN VU NGOC TRAN,SINGLETON DENNIS,SEAMONS MARTIN JAY,JANAKIRAMAN KARTHIK,BALASUBRAMANIAN GANESH,AYOUB MOHAMED,YEH WENDY H,DEMOS ALEXANDROS T,M SAAD HICHEM
- 优先权： US77541406 2006-02-21; US50854406 2006-08-23
- 主分类号： B08B6/00
- IPC分类号： B08B6/00 ; B08B9/00
摘要：
Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要（中）：
提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。 这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。 反应性物质由含氧气体如O 2和/或含卤素气体如NF 3产生。 在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。