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1. 发明申请

WO2013067201A3 SYSTEM ARCHITECTURE FOR PLASMA PROCESSING SOLAR WAFERS 审中-公开
标题翻译：等离子体处理太阳能波束的系统架构
公开(公告)号：WO2013067201A3
公开(公告)日：2014-12-04
申请号：PCT/US2012063090
申请日：2012-11-01
申请人： INTEVAC INC , CHO YOUNG KYU , JANAKIRAMAN KARTHIK , BLUCK TERRY , KEDLAYA DIWAKAR
发明人： CHO YOUNG KYU , JANAKIRAMAN KARTHIK , BLUCK TERRY , KEDLAYA DIWAKAR
IPC分类号： H01L21/687
CPC分类号： H01L31/18
摘要： A system for plasma processing of wafers at high throughput, particularly suitable for processing solar cells. A loading station has a loading conveyor, a loading transport mechanism, and a chuck loading station accepting transportable electrostatic chucks, wherein the loading transport mechanism is configured to remove wafers from the conveyor and place them on the transportable electrostatic chucks. The transportable chuck is delivered to at least one processing chamber to perform plasma processing of wafers. An unloading station has an unloading conveyor, an unloading transport mechanism, and a chuck unloading station accepting the transportable electrostatic chucks from the processing chamber, wherein the unloading transport mechanism is configured to remove wafers from the transportable electrostatic chucks and place them on the conveyor. A chuck return module configured for transporting the transportable electrostatic chucks from the chuck unloading station to the chuck loading station.
摘要翻译：一种用于在高通量下等离子体处理晶片的系统，特别适用于处理太阳能电池。装载站具有装载传送装置，装载传送机构和接收可移动静电卡盘的卡盘装载站，其中装载传送机构构造成从输送机移除晶片并将它们放置在可运送的静电卡盘上。可移动卡盘被输送到至少一个处理室以执行晶片的等离子体处理。卸载站具有卸载输送机，卸载输送机构和从处理室接收可移动静电卡盘的卡盘卸载站，其中卸载输送机构构造成从可移动静电卡盘移除晶片并将其放置在输送机上。卡盘返回模块，其构造成将可移动静电卡盘从卡盘卸载站运送到卡盘装载站。

2. 发明申请

WO2012061436A4 DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER 审中-公开
标题翻译：硅晶片表面纹理形成的干法蚀刻方法
公开(公告)号：WO2012061436A4
公开(公告)日：2013-05-30
申请号：PCT/US2011058846
申请日：2011-11-01
申请人： INTEVAC INC , CHO YOUNG KYU
发明人： CHO YOUNG KYU
IPC分类号： B65G49/07 , H01L21/67 , H01L31/18
CPC分类号： H01L31/02363 , Y02E10/50
摘要： Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.
摘要翻译：公开了用于改善硅晶片表面反射率的系统和方法。该系统和方法通过执行表面氧化和干法蚀刻工艺在硅晶片上形成纹理表面来改善表面反射率。表面氧化可以使用干氧等离子体工艺来进行。执行干式蚀刻工艺以去除由表面氧化步骤形成的氧化物层，并用氧化物掩模蚀刻硅层。干法刻蚀可以形成黑色硅，从而最大限度地减少或消除光反射或散射，最终实现更高的能量转换效率。

3. 发明申请

WO2013052713A1 INDUCTIVE/CAPACITIVE HYBRID PLASMA SOURCE AND SYSTEM WITH SUCH CHAMBER 审中-公开
标题翻译：电感/电容混合等离子体源和具有这种室的系统
公开(公告)号：WO2013052713A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/058819
申请日：2012-10-04
申请人： INTEVAC, INC. , CHO, Young, Kyu , TAN, Kenneth , JANAKIRAMAN, Karthik , HUANG, Judy
发明人： CHO, Young, Kyu , TAN, Kenneth , JANAKIRAMAN, Karthik , HUANG, Judy
IPC分类号： H05H1/46
CPC分类号： H01J37/32091 , H01J37/321
摘要： A plasma processing chamber having capacitive and inductive coupling of RF power. An RF power source is connected to an inductive coil and to a top electrode via a variable capacitor to control the ratio of power applied to the coil and electrode. The bottom electrode, which is part of the chuck holding the substrates, is floating, but has parasitive capacitance coupling to ground. No RF bias is applied to the chuck and/or the substrate, but the substrate is chucked using DC power. In a system utilizing the chamber, the chuck is movable and is loaded with substrates outside the chamber, enter the chamber from one side for processing, exit the chamber from an opposite side after the processing, and is unloaded in an unloading chamber. The chuck is then transported back to the loading chamber. Substrates are delivered to and removed from the system using conveyor belts.
摘要翻译：一种具有RF功率的电容和电感耦合的等离子体处理室。 RF电源通过可变电容器连接到感应线圈和顶部电极，以控制施加到线圈和电极的功率比。作为夹持基板的卡盘的一部分的底部电极是浮动的，但具有耦合到地的寄生电容。没有将RF偏压施加到卡盘和/或基板上，而是使用DC电源夹住基板。在使用该腔室的系统中，卡盘可移动并且在室外装载基底，从一侧进入腔室进行处理，在处理之后从相对侧离开腔室，并在卸载室中卸载。卡盘然后被运回到装载室。使用传送带将基板输送到系统并从系统中移出。

4. 发明申请

WO2013067218A1 SOLAR WAFER ELECTROSTATIC CHUCK 审中-公开
标题翻译：太阳能电熨斗
公开(公告)号：WO2013067218A1
公开(公告)日：2013-05-10
申请号：PCT/US2012/063114
申请日：2012-11-01
申请人： INTEVAC, INC. , CHO, Young, Kyu , JANAKIRAMAN, Karthik , BLUCK, Terry , KEDLAYA, Diwakar
发明人： CHO, Young, Kyu , JANAKIRAMAN, Karthik , BLUCK, Terry , KEDLAYA, Diwakar
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , H01J2237/16 , H01L21/6833 , H01L31/18 , Y10T29/49117
摘要： An electrostatic chuck is disclosed, which is especially suitable for fabrication of substrates at high throughput. The disclosed chuck may be used for fabricating large substrates or several smaller substrates simultaneously. For example, disclosed embodiments can be used for fabrication of multiple solar cells simultaneously, providing high throughput. An electrostatic chuck body is constructed using aluminum body having sufficient thermal mass to control temperature rise of the chuck, and anodizing the top surface of the body. A ceramic frame is provided around the chuck's body to protect it from plasma corrosion. If needed, conductive contacts are provided to apply voltage bias to the wafer. The contacts are exposed through the anodization.
摘要翻译：公开了一种静电卡盘，其特别适用于以高产量制造基板。所公开的卡盘可以用于同时制造大的基板或几个较小的基板。例如，所公开的实施例可以同时用于制造多个太阳能电池，从而提供高通量。使用具有足够热质量的铝体来控制卡盘的温度升高并且阳极氧化主体的顶表面构成静电卡盘体。在卡盘的主体周围设置陶瓷框架，以防止其等离子体腐蚀。如果需要，提供导电触点以向晶片施加电压偏压。触点通过阳极氧化暴露。

5. 发明申请

WO2013067201A2 SYSTEM ARCHITECTURE FOR PLASMA PROCESSING SOLAR WAFERS 审中-公开
标题翻译：等离子体处理太阳能波束的系统架构
公开(公告)号：WO2013067201A2
公开(公告)日：2013-05-10
申请号：PCT/US2012/063090
申请日：2012-11-01
申请人： INTEVAC, INC. , CHO, Young, Kyu , JANAKIRAMAN, Karthik , BLUCK, Terry , KEDLAYA, Diwakar
发明人： CHO, Young, Kyu , JANAKIRAMAN, Karthik , BLUCK, Terry , KEDLAYA, Diwakar
IPC分类号： H01L21/3065
CPC分类号： H01L31/18
摘要： A system for plasma processing of wafers at high throughput, particularly suitable for processing solar cells. A loading station has a loading conveyor, a loading transport mechanism, and a chuck loading station accepting transportable electrostatic chucks, wherein the loading transport mechanism is configured to remove wafers from the conveyor and place them on the transportable electrostatic chucks. The transportable chuck is delivered to at least one processing chamber to perform plasma processing of wafers. An unloading station has an unloading conveyor, an unloading transport mechanism, and a chuck unloading station accepting the transportable electrostatic chucks from the processing chamber, wherein the unloading transport mechanism is configured to remove wafers from the transportable electrostatic chucks and place them on the conveyor. A chuck return module configured for transporting the transportable electrostatic chucks from the chuck unloading station to the chuck loading station.
摘要翻译：用于高通量处理晶片的系统，特别适用于处理太阳能电池。装载站具有装载传送装置，装载传送机构和接受可移动静电卡盘的卡盘装载站，其中装载传送机构构造成从输送机移除晶片并将它们放置在可运送的静电卡盘上。可移动卡盘被输送到至少一个处理室以执行晶片的等离子体处理。卸载站具有卸载输送机，卸载输送机构和从处理室接收可运输静电卡盘的卡盘卸载站，其中卸载输送机构构造成从可移动静电卡盘移除晶片并将其放置在输送机上。卡盘返回模块，其构造成将可移动静电卡盘从卡盘卸载站运送到卡盘装载站。

6. 发明申请

WO2012061436A3 DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER 审中-公开
标题翻译：硅胶表面纹理形成干蚀刻方法
公开(公告)号：WO2012061436A3
公开(公告)日：2013-04-11
申请号：PCT/US2011058846
申请日：2011-11-01
申请人： INTEVAC INC , CHO YOUNG KYU
发明人： CHO YOUNG KYU
IPC分类号： B65G49/07 , H01L21/67 , H01L31/18
CPC分类号： H01L31/02363 , Y02E10/50
摘要： Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.
摘要翻译：公开了用于提高硅晶片的表面反射率的系统和方法。该系统和方法通过进行表面氧化和干蚀刻工艺在硅晶片上形成纹理表面来提高表面反射率。表面氧化可以使用干氧等离子体工艺进行。执行干蚀刻工艺以除去由表面氧化步骤形成的氧化物层，并用氧化物掩模蚀刻硅层。干式蚀刻使得黑色硅形成能够最小化或消除光反射或散射，最终导致更高的能量转换效率。

7. 发明申请

WO2012061436A2 DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER 审中-公开
标题翻译：硅胶表面纹理形成干蚀刻方法
公开(公告)号：WO2012061436A2
公开(公告)日：2012-05-10
申请号：PCT/US2011/058846
申请日：2011-11-01
申请人： INTEVAC, INC. , CHO, Young, Kyu
发明人： CHO, Young, Kyu
IPC分类号： H01L31/0236 , H01L21/302 , H01L21/306
CPC分类号： H01L31/02363 , Y02E10/50
摘要： Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.
摘要翻译：公开了用于提高硅晶片的表面反射率的系统和方法。该系统和方法通过进行表面氧化和干蚀刻工艺在硅晶片上形成纹理表面来提高表面反射率。表面氧化可以使用干氧等离子体工艺进行。执行干蚀刻工艺以除去由表面氧化步骤形成的氧化物层，并用氧化物掩模蚀刻硅层。干式蚀刻使得黑色硅形成能够最小化或消除光反射或散射，最终导致更高的能量转换效率。

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