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1. 发明申请

WO2006015912A1 MOSFET STRUCTURE WITH MULTIPLE SELF-ALIGNED SILICIDE CONTACTS 审中-公开
标题翻译：具有多个自对准硅化物接触的MOSFET结构
公开(公告)号：WO2006015912A1
公开(公告)日：2006-02-16
申请号：PCT/EP2005/053082
申请日：2005-06-29
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , CHAN, Kevin , LAVOIE, Christian , RIM, Kern
发明人： CHAN, Kevin , LAVOIE, Christian , RIM, Kern
IPC分类号： H01L21/336
CPC分类号： H01L29/66507 , H01L29/6653 , H01L29/7833
摘要： A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field effect transistor (14) having a gate conductor including a gate edge located on a surface of a Si-containing substrate; a first inner silicide (32) having an edge that is substantially aligned to the gate edge of the at least one metal oxide semiconductor field effect transistor; and a second outer silicide (30) located adjacent to the first inner silicide. In accordance with the present invention, the second outer silicide has second thickness is greater than the first thickness of the first inner silicide. Moreover, the second outer silicide has a resistivity that is lower than the resistivity of the first inner silicide.
摘要翻译：提供了包括多个不同的自对准硅化物触点的金属氧化物半导体场效应晶体管（MOSFET）结构及其制造方法。 MOSFET结构包括至少一个金属氧化物半导体场效应晶体管（14），其具有包括位于含Si衬底的表面上的栅极边缘的栅极导体; 第一内部硅化物（32），其具有基本上对准所述至少一个金属氧化物半导体场效应晶体管的栅极边缘的边缘; 以及位于第一内部硅化物附近的第二外部硅化物（30）。根据本发明，第二外部硅化物的第二厚度大于第一内部硅化物的第一厚度。此外，第二外部硅化物的电阻率低于第一内部硅化物的电阻率。

2. 发明申请

WO2011051109A1 BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE DRIVE CURRENT 审中-公开
标题翻译：双层NFET嵌入式应力元件和集成以增强驱动电流
公开(公告)号：WO2011051109A1
公开(公告)日：2011-05-05
申请号：PCT/EP2010/065495
申请日：2010-10-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , ONTALUS, Viorel , CHAN, Kevin , DUBE, Abhishek , LI, Jinghong , ZHU, Zhengmao
发明人： ONTALUS, Viorel , CHAN, Kevin , DUBE, Abhishek , LI, Jinghong , ZHU, Zhengmao
IPC分类号： H01L21/336 , H01L29/165 , H01L29/78
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/7834 , Y10S257/90 , Y10S257/902 , Y10S257/903
摘要： A semiconductor structure including a bi-layer nFET embedded stressor element is disclosed. The bi-layer nFET embedded stressor element can be integrated into any CMOS process flow. The bi-layer nFET embedded stressor element includes an implant damaged free first layer of a first epitaxy semiconductor material having a lattice constant that is different from a lattice constant of a semiconductor substrate and imparts a tensile strain in a device channel of an nFET gate stack. Typically, and when the semiconductor is composed of silicon, the first layer of the bi-layer nFET embedded stressor element is composed of Si:C. The bi-layer nFET embedded stressor element further includes a second layer of a second epitaxy semiconductor material that has a lower resistance to dopant diffusion than the first epitaxy semiconductor material. Typically, and when the semiconductor is composed of silicon, the second layer of the bi-layer nFET embedded stressor element is composed of silicon. Only the second layer of the bi-layer nFET embedded stressor element includes the implanted source/drain regions.
摘要翻译：公开了一种包括双层nFET嵌入式应力元件的半导体结构。双层nFET嵌入式应力元件可以集成到任何CMOS工艺流程中。双层nFET嵌入式应力元件包括具有不同于半导体衬底的晶格常数的晶格常数的第一外延半导体材料的自由第一层的植入物，并且在nFET栅极堆叠的器件沟道中施加拉伸应变。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第一层由Si：C组成。双层nFET嵌入式应力元件还包括具有比第一外延半导体材料更低的掺杂剂扩散阻力的第二外延半导体材料层。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第二层由硅组成。双层nFET嵌入式应力元件的第二层仅包括注入的源极/漏极区域。

3. 发明申请

WO2004077509A2 SHALLOW TRENCH ISOLATION STRUCTURE FOR STRAINED Si ON SiGe 审中-公开
标题翻译：对SiGe上的应变Si的沉积分离结构
公开(公告)号：WO2004077509A2
公开(公告)日：2004-09-10
申请号：PCT/US2004/005020
申请日：2004-02-20
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , KOESTER, Steven , BEYER, Klaus , HARGROVE, Michael , RIM, Kern , CHAN, Kevin
发明人： KOESTER, Steven , BEYER, Klaus , HARGROVE, Michael , RIM, Kern , CHAN, Kevin
IPC分类号： H01L
CPC分类号： H01L29/7842 , H01L21/76224 , H01L29/78687
摘要： A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench extending downward from the substrate top surface and penetrating into the SiGe based layer, forming a sidewall in the substrate. An epitaxial Si liner is selectively deposited onto the trench sidewall, and subsequently thermally oxidized. The trench is filled with a trench dielectric, which protrudes above the substrate top surface.
摘要翻译：公开了用于隔离电子设备的结构和用于制造该结构的方法。电子器件在包括在应变Si层下面的基于SiGe的层的衬底中被处理。隔离结构包括从衬底顶表面向下延伸并且穿透到基于SiGe的层中的沟槽，在衬底中形成侧壁。外延Si衬垫选择性地沉积在沟槽侧壁上，随后被热氧化。沟槽填充有沟槽电介质，其在衬底顶表面上方突出。

4. 发明申请

WO2007019495A2 CHEMICAL VAPOR DEPOSITION OF HYDROGEL FILMS 审中-公开
标题翻译：化学气相沉积水凝胶薄膜
公开(公告)号：WO2007019495A2
公开(公告)日：2007-02-15
申请号：PCT/US2006/030873
申请日：2006-08-07
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , GLEASON, Karen, K. , CHAN, Kevin
发明人： GLEASON, Karen, K. , CHAN, Kevin
CPC分类号： C09D4/00 , B05D1/60
摘要： In one embodiment of the invention, iCVD is used to form non-crosslinked thin films using a radical initiator and an alkene. In another embodiment, iCVD is used to form crosslinked thin films by the addition of a crosslinking agent (e.g., a diacrylate or a dimethyacrylate). In one embodiment, when the crosslinker is EDGA and the monomer is HEMA it results in crosslinked P(HEMA-co-EGDA) copolymer, m another embodiment, when the crosslinker is EDGA and the monomer is VP, it results in crosslinked P(VP-co- EGDA). Disclosed are the effects of crosslinker incorporation on the thermal and the wetting properties of the polymers. The unique swelling properties of these films are also described; certain films of the present invention are hydro gels when soaked in water.
摘要翻译：在本发明的一个实施方案中，iCVD用于使用自由基引发剂和烯烃形成非交联薄膜。在另一个实施方案中，iCVD通过加入交联剂（例如二丙烯酸酯或二甲基丙烯酸酯）用于形成交联薄膜。在一个实施方案中，当交联剂为EDGA并且单体为HEMA时，其导致交联的P（HEMA-co-EGDA）共聚物。在另一个实施方案中，当交联剂为EDGA且单体为VP时，其导致交联的P -CO- EGDA）。公开了交联剂结合对聚合物的热性能和润湿性能的影响。还描述了这些薄膜的独特溶胀性能; 当浸泡在水中时，本发明的某些薄膜是水凝胶。

5. 发明申请

WO2009058700A2 AIR OXIDATION HAIR DYE APPLICATION SYSTEM AND METHOD FOR COLORING HAIR USING THE SAME 审中-公开
标题翻译：空气氧化头发染色应用系统和使用该染色染发剂的方法
公开(公告)号：WO2009058700A2
公开(公告)日：2009-05-07
申请号：PCT/US2008/081252
申请日：2008-10-27
申请人： COMBE INTERNATIONAL LTD. , MASSONI, Jack, T. , 0LSSON, Alan , MACKINSON, Peter , CHAN, Kevin
发明人： MASSONI, Jack, T. , 0LSSON, Alan , MACKINSON, Peter , CHAN, Kevin
IPC分类号： A45D24/22 , A45D7/04 , A61Q5/10
CPC分类号： A45D24/22 , A45D2019/0091
摘要： An air oxidation hair dye application system and a method for coloring hair using this system are provided. The system includes a container holding the hair dye and a comb-shaped applicator mounted on the container.
摘要翻译：提供一种空气氧化染发剂施用系统和使用该系统染发毛发的方法。该系统包括容纳染发剂的容器和安装在容器上的梳状涂抹器。

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