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1. 发明申请

WO2009079159A2 SYSTEMS AND METHODS TO INCREASE UNIAXIAL COMPRESSIVE STRESS IN TRI-GATE TRANSISTORS 审中-公开
标题翻译：用于增加三栅极晶体管中的单轴压缩应力的系统和方法
公开(公告)号：WO2009079159A2
公开(公告)日：2009-06-25
申请号：PCT/US2008084344
申请日：2008-11-21
申请人： INTEL CORP , RAKSHIT TITASH , GILES MARTIN D , GHANI TAHIR , MURTHY ANAND , CEA STEPHEN M
发明人： RAKSHIT TITASH , GILES MARTIN D , GHANI TAHIR , MURTHY ANAND , CEA STEPHEN M
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L21/823437 , H01L21/26506 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A transistor structure that increases uniaxial compressive stress on the channel region of a tri-gate transistor comprises at least two semiconductor bodies formed on a substrate, each semiconductor body having a pair of laterally opposite sidewalls and a top surface, a common source region formed on one end of the semiconductor bodies, wherein the common source region is coupled to all of the at least two semiconductor bodies, a common drain region formed on another end of the semiconductor bodies, wherein the common drain region is coupled to all of the at least two semiconductor bodies, and a common gate electrode formed over the at least two semiconductor bodies, wherein the common gate electrode provides a gate electrode for each of the at least two semiconductor bodies and wherein the common gate electrode has a pair of laterally opposite sidewalls that are substantially perpendicular to the sidewalls of the semiconductor bodies.
摘要翻译：一种增加三栅极晶体管的沟道区上的单轴压缩应力的晶体管结构包括至少两个形成在衬底上的半导体本体，每个半导体本体具有一对横向相对的侧壁和顶表面，形成在其上的公共源极区半导体本体的一端，其中公共源极区域耦合到所有至少两个半导体本体;公共漏极区域，形成在半导体本体的另一端上，其中公共漏极区域耦合到所有的至少一个两个半导体本体以及形成在所述至少两个半导体本体上方的公共栅电极，其中所述公共栅电极为所述至少两个半导体本体中的每一个提供栅电极，并且其中所述公共栅电极具有一对横向相对的侧壁，基本垂直于半导体本体的侧壁。

2. 发明申请

WO2012074872A3 SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES 审中-公开
标题翻译：硅和硅锗纳米结构
公开(公告)号：WO2012074872A3
公开(公告)日：2012-10-04
申请号：PCT/US2011062059
申请日：2011-11-23
申请人： INTEL CORP , KUHN KELIN J , KIM SEIYON , RIOS RAFAEL , CEA STEPHEN M , GILES MARTIN D , CAPPELLANI ANNALISA , RAKSHIT TITASH , CHANG PETER , RACHMADY WILLY
发明人： KUHN KELIN J , KIM SEIYON , RIOS RAFAEL , CEA STEPHEN M , GILES MARTIN D , CAPPELLANI ANNALISA , RAKSHIT TITASH , CHANG PETER , RACHMADY WILLY
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/0673 , B82Y10/00 , H01L21/76224 , H01L27/0922 , H01L27/1203 , H01L29/0676 , H01L29/1033 , H01L29/16 , H01L29/165 , H01L29/41733 , H01L29/42392 , H01L29/66439 , H01L29/66742 , H01L29/66795 , H01L29/775 , H01L29/7848 , H01L29/785 , H01L29/78618 , H01L29/78654 , H01L29/78684 , H01L29/78696
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other.
摘要翻译：描述形成微电子结构的方法。这些方法的实施例包括形成纳米线装置，其包括基板，该基板包括与间隔物相邻的源极/漏极结构，以及设置在间隔物之间的纳米线通道结构，其中纳米线通道结构在彼此之上垂直堆叠。

3. 发明申请

WO2012040075A3 NON-PLANAR DEVICE HAVING UNIAXIALLY STRAINED FIN AND METHOD OF MAKING SAME 审中-公开
标题翻译：具有非均匀应变FIN的非平面设备及其制造方法
公开(公告)号：WO2012040075A3
公开(公告)日：2012-06-07
申请号：PCT/US2011052084
申请日：2011-09-19
申请人： INTEL CORP , CEA STEPHEN M , KOTLYAR ROZA , KAVALIEROS JACK T , GILES MARTIN D , GHANI TAHIR , KUHN KELIN J , KUHN MARKUS , ZELICK NANCY M
发明人： CEA STEPHEN M , KOTLYAR ROZA , KAVALIEROS JACK T , GILES MARTIN D , GHANI TAHIR , KUHN KELIN J , KUHN MARKUS , ZELICK NANCY M
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7848 , H01L29/1054 , H01L29/66795 , H01L29/7849 , H01L29/785
摘要： A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.
摘要翻译：根据该方法制造的方法和装置。该方法包括提供包括第一材料的基底，并且提供包括第二材料的翅片，所述翅片设置在所述基底上并且具有器件活性部分，所述第一材料和所述第二材料在其各自的结晶结构之间呈现晶格失配。提供散热片包括在基板上提供包括第二材料的双轴应变膜; 并除去双轴应变膜的部分以形成基本上单轴应变的翅片。

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