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1. 发明申请

WO2012040681A2 NON-PLANAR QUANTUM WELL DEVICE HAVING INTERFACIAL LAYER AND METHOD OF FORMING SAME 审中-公开
标题翻译：具有界面层的非平面量子阱器件及其形成方法
公开(公告)号：WO2012040681A2
公开(公告)日：2012-03-29
申请号：PCT/US2011053173
申请日：2011-09-24
申请人： INTEL CORP , RACHMADY WILLY , PILLARISETTY RAVI , LE VAN H , CHAU ROBERT
发明人： RACHMADY WILLY , PILLARISETTY RAVI , LE VAN H , CHAU ROBERT
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7851 , B82Y10/00 , H01L21/30604 , H01L21/76224 , H01L29/0649 , H01L29/1037 , H01L29/1054 , H01L29/122 , H01L29/151 , H01L29/165 , H01L29/267 , H01L29/513 , H01L29/66431 , H01L29/66439 , H01L29/66787 , H01L29/66795 , H01L29/775 , H01L29/785
摘要： Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), and a quantum well layer. A fin structure is formed in the quantum well structure, and an interfacial layer provided over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.
摘要翻译：公开了用于形成非平面量子阱结构的技术。特别地，量子阱结构可以用IV或III-V族半导体材料来实现，并且包括翅片结构。在一个示例的情况下，提供非平面量子阱器件，其包括具有衬底（例如硅上的SiGe或GaAs缓冲器），IV或III-V材料阻挡层（例如，SiGe或GaAs或 AlGaAs）和量子阱层。在量子阱结构中形成翅片结构，并且在鳍结构上设置界面层。栅极金属可以跨鳍片结构沉积。排水/源极区域可以形成在翅片结构的相应端部处。

2. 发明申请

WO2012087748A3 UNIAXIALLY STRAINED QUANTUM WELL DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：独特的应变量子阱器件及其制造方法
公开(公告)号：WO2012087748A3
公开(公告)日：2012-10-04
申请号：PCT/US2011065193
申请日：2011-12-15
申请人： INTEL CORP , RACHMADY WILLY , PILLARISETTY RAVI , LE VAN H
发明人： RACHMADY WILLY , PILLARISETTY RAVI , LE VAN H
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66431 , B82Y10/00 , H01L29/045 , H01L29/122 , H01L29/802
摘要： A planar or non-planar quantum well device and a method of forming the quantum well device. The device includes: a buffer region comprising a large band gap material; a uniaxially strained quantum well channel region on the buffer region; an upper barrier region comprising a large band gap material on the quantum well channel region; a gate dielectric on the quantum well channel region; a gate electrode on the gate dielectric; and recessed source and drain regions at respective sides of the gate electrode, the source and drain regions including a junction material having a lattice constant different from a lattice constant of a material of the buffer region. Preferably, the buffer region comprises a Si1-xGex material, and the junction material comprises one of a Si1-yGey material where y is larger than x, or pure germanium, or tin germanium.
摘要翻译：平面或非平面量子阱器件和形成量子阱器件的方法。该装置包括：包括大带隙材料的缓冲区; 缓冲区上的单轴应变量子阱沟道区; 在所述量子阱沟道区上包括大带隙材料的上阻挡区; 量子阱沟道区上的栅极电介质; 栅电极上的栅电极; 以及在栅电极的相应侧处的凹入的源极和漏极区域，源极和漏极区域包括具有与缓冲区域的材料的晶格常数不同的晶格常数的结合材料。优选地，缓冲区包括Si1-xGex材料，并且所述连接材料包括y大于x的Si 1-y Ga y材料，或纯锗或锡锗中的一种。

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