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1. 发明申请

WO2009032359A2 GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM 审中-公开
标题翻译：第四组纳米晶体结及其器件
公开(公告)号：WO2009032359A2
公开(公告)日：2009-03-12
申请号：PCT/US2008057702
申请日：2008-03-20
申请人： INNOVALIGHT INC , ABBOTT MALCOLM , KELMAN MAXIM , LEMMI FRANCESCO , MEISEL ANDREAS , POPLAVSKYY DMITRY , TERRY MASON , VANHEUSDEN KAREL
发明人： ABBOTT MALCOLM , KELMAN MAXIM , LEMMI FRANCESCO , MEISEL ANDREAS , POPLAVSKYY DMITRY , TERRY MASON , VANHEUSDEN KAREL
IPC分类号： H01L31/04
CPC分类号： H01L31/0352 , H01L31/056 , H01L31/061 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

2. 发明申请

WO2009117007A2 METHODS FOR FORMING COMPOSITE NANOPARTICLE-METAL METALLIZATION CONTACTS ON A SUBSTRATE 审中-公开
标题翻译：在基材上形成复合纳米金属金属化接触的方法
公开(公告)号：WO2009117007A2
公开(公告)日：2009-09-24
申请号：PCT/US2008059113
申请日：2008-04-02
申请人： INNOVALIGHT INC , VANHEUSDEN KAREL , LEMMI FRANCESCO , POPLAVSKYY DMITRY , TERRY MASON , ABBOTT MALCOLM
发明人： VANHEUSDEN KAREL , LEMMI FRANCESCO , POPLAVSKYY DMITRY , TERRY MASON , ABBOTT MALCOLM
IPC分类号： H01L21/28 , H01L31/18
CPC分类号： H01L31/022425 , Y02E10/50 , Y10S977/773 , Y10S977/775 , Y10S977/777 , Y10S977/778 , Y10S977/939
摘要： A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.
摘要翻译：公开了一种用于形成与基板的接触的方法。所述方法包括提供衬底，所述衬底被掺杂有第一掺杂剂; 并且将第二掺杂剂扩散到所述衬底的至少第一侧中以形成第二掺杂剂区域，所述第一侧还包括第一侧表面区域。该方法还包括在基板的第一侧上形成介电层。该方法还包括在电介质层上形成一组复合层区域，其中该组复合层区域的每个复合层区域还包括一组IV族半导体纳米颗粒和一组金属颗粒。该方法还包括将该组复合层区域加热到第一温度，其中该组复合层区域中的至少一些复合层区域蚀刻通过介电层并与第二掺杂剂区域形成一组接触。

3. 发明申请

WO2008039757A3 SEMICONDUCTOR DEVICES AND METHODS FROM GROUP IV NANOPARTICLE MATERIALS 审中-公开
标题翻译：第四族纳米材料的半导体器件和方法
公开(公告)号：WO2008039757A3
公开(公告)日：2008-11-20
申请号：PCT/US2007079393
申请日：2007-09-25
申请人： INNOVALIGHT INC , POPLAVSKYY DMITRY , ANTONIADIS HOMER , JURBERGS DAVID , KELMAN MAXIM , LEMMI FRANCESCO , YU PINGRONG
发明人： POPLAVSKYY DMITRY , ANTONIADIS HOMER , JURBERGS DAVID , KELMAN MAXIM , LEMMI FRANCESCO , YU PINGRONG
IPC分类号： H01L31/18 , H01L31/068 , H01L31/075
CPC分类号： H01L31/076 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该装置包括基板; 形成在基板上方的绝缘层; 以及形成在所述绝缘层之上的第一电极。该器件还包括沉积在第一电极上的第一掺杂的IV族纳米颗粒薄膜; 以及沉积在第一掺杂的IV族纳米颗粒薄膜上的第二掺杂的IV族纳米颗粒薄膜。该器件还包括沉积在第二掺杂的IV族纳米颗粒薄膜上的第三掺杂的IV族纳米颗粒薄膜; 沉积在第三掺杂的IV族纳米颗粒薄膜上的第四掺杂的IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。其中当向第四掺杂的IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

4. 发明申请

WO2008039757A2 SEMICONDUCTOR DEVICES AND METHODS FROM GROUP IV NANOPARTICLE MATERIALS 审中-公开
标题翻译：半导体装置和第四组纳米颗粒材料的方法
公开(公告)号：WO2008039757A2
公开(公告)日：2008-04-03
申请号：PCT/US2007079393
申请日：2007-09-25
申请人： INNOVALIGHT INC , POPLAVSKYY DMITRY , ANTONIADIS HOMER , JURBERGS DAVID , KELMAN MAXIM , LEMMI FRANCESCO , YU PINGRONG
发明人： POPLAVSKYY DMITRY , ANTONIADIS HOMER , JURBERGS DAVID , KELMAN MAXIM , LEMMI FRANCESCO , YU PINGRONG
IPC分类号： H01L31/04 , H01L31/0384 , H01L31/18
CPC分类号： H01L31/076 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的设备。该器件包括衬底; 形成在衬底上方的绝缘层; 以及形成在绝缘层上的第一电极。该器件还包括沉积在第一电极上的第一掺杂IV族纳米颗粒薄膜; 以及沉积在第一掺杂IV族纳米颗粒薄膜上的第二掺杂IV族纳米颗粒薄膜。该器件还包括沉积在第二掺杂IV族纳米颗粒薄膜上的第三掺杂IV族纳米颗粒薄膜; 沉积在第三掺杂IV族纳米颗粒薄膜上的第四掺杂IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。其中，当对第四掺杂IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

5. 发明申请

WO2008030966B1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米颗粒形成的半导体薄膜
公开(公告)号：WO2008030966B1
公开(公告)日：2008-05-15
申请号：PCT/US2007077765
申请日：2007-09-06
申请人： INNOVALIGHT INC , KELMAN MAXIM , YU PINGRONG , JAYARAMAN MANIKANDAN , POPLAVSKYY DMITRY , JURBERGS DAVID , LEMMI FRANCESCO , ANTONIADIS HOMER
发明人： KELMAN MAXIM , YU PINGRONG , JAYARAMAN MANIKANDAN , POPLAVSKYY DMITRY , JURBERGS DAVID , LEMMI FRANCESCO , ANTONIADIS HOMER
IPC分类号： H01L21/208
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米粒子的配方由涂层基材形成的天然IV族半导体薄膜。这种原生IV族半导体薄膜利用了IV族半导体材料的广泛的历史知识，同时利用IV族半导体纳米颗粒的优点来生产可容易地集成到多种器件中的新型薄膜。

6. 发明申请

WO2009131845A3 JUNCTION FORMATION ON WAFER SUBSTRATES USING GROUP IV NANOPARTICLES 审中-公开
标题翻译：使用第四组纳米颗粒在基底上形成结晶
公开(公告)号：WO2009131845A3
公开(公告)日：2010-04-01
申请号：PCT/US2009040069
申请日：2009-04-09
申请人： INNOVALIGHT INC , TERRY MASON , ANTONIADIS HOMER , POPLAVSKYY DMITRY , KELMAN MAXIM
发明人： TERRY MASON , ANTONIADIS HOMER , POPLAVSKYY DMITRY , KELMAN MAXIM
IPC分类号： H01L21/265 , H01L31/042
CPC分类号： H01L21/2256 , H01L21/02532 , H01L21/02573 , H01L21/02601 , H01L21/02628 , H01L21/2257 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
摘要翻译：公开了形成扩散区域的方法。该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。

7. 发明申请

WO2011091409A8 METHODS OF FORMING A MULTI-DOPED JUNCTION WITH SILICON-CONTAINING PARTICLES 审中-公开
标题翻译：用含硅颗粒形成多层结的方法
公开(公告)号：WO2011091409A8
公开(公告)日：2012-08-23
申请号：PCT/US2011022377
申请日：2011-01-25
申请人： INNOVALIGHT INC , SCARDERA GIUSEPPE , KAN SHIHAI , KELMAN MAXIM , POPLAVSKYY DMITRY
发明人： SCARDERA GIUSEPPE , KAN SHIHAI , KELMAN MAXIM , POPLAVSKYY DMITRY
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCI3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a second temperature and for a second time period, wherein a PSG layer is formed on the front substrate surface and on the densified film ink pattern; and heating the substrate in a drive-in ambient to a third temperature; wherein a first diffused region with a first sheet resistance is formed under the front substrate surface covered by the densified film ink pattern, and a second diffused region with a second sheet resistance is formed under the front substrate surface not covered with the densified film ink pattern, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。该方法还包括以油墨图案在前基板表面上沉积油墨，该油墨包括一组含硅颗粒和一组溶剂。该方法还包括将烘烤环境中的基材加热到第一温度并在第一时间段内，以便产生致密的薄膜油墨图案。该方法还包括将基底暴露于具有沉积环境的扩散炉中的掺杂剂源，沉积环境包括POCI3，载体N2气体，主N 2气体和在第二温度下的反应性O 2气体，并且第二次其中在前基板表面和致密薄膜墨图案上形成PSG层; 以及将驱动环境中的衬底加热至第三温度; 其特征在于，在被所述致密膜油墨图案覆盖的前面基板表面的下方形成有具有第一薄层电阻的第一扩散区域，在未被所述致密化薄膜墨水图案覆盖的所述前面基板表面的下方形成具有第二薄层电阻的第二扩散区域，并且其中所述第一薄层电阻基本上小于所述第二薄层电阻。

8. 发明申请

WO2008102258A2 SUBSTRATE PREPARATION FOR ENHANCED THIN FILM FABRICATION FROM GROUP IV SEMICONDUCTOR NANOPARTICLES 审中-公开
标题翻译：第IV组半导体纳米材料增强薄膜制备的基板制备
公开(公告)号：WO2008102258A2
公开(公告)日：2008-08-28
申请号：PCT/IB2008000463
申请日：2008-02-29
申请人： INNOVALIGHT INC , POPLAVSKYY DMITRY , MASON TERRY
发明人： POPLAVSKYY DMITRY , MASON TERRY
IPC分类号： H01L21/208
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/02628
摘要： A method for producing a thin film promoter layer is disclosed. The method includes depositing a Group IV semiconductor ink on a substrate, the Group IV semiconductor ink including a set of Group IV semiconductor nanoparticles and a set of metal nanoparticles to form a porous compact. The method also includes heating the substrate to a first temperature between about 350°C to about 765°C and for a first time period between 5 min to about 3 hours.
摘要翻译：公开了一种制造薄膜启动层的方法。该方法包括在基板上沉积IV族半导体油墨，该IV族半导体油墨包括一组IV族半导体纳米颗粒和一组金属纳米颗粒以形成多孔压块。该方法还包括将基底加热至约350℃至约765℃之间的第一温度和5分钟至约3小时之间的第一时间。

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