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1. 发明申请

WO2011001293A2 METHOD OF FORMING AN ELECTROMECHANICAL TRANSDUCER DEVICE 审中-公开
标题翻译：形成机电传感器装置的方法
公开(公告)号：WO2011001293A2
公开(公告)日：2011-01-06
申请号：PCT/IB2010001950
申请日：2010-06-15
申请人： FREESCALE SEMICONDUCTOR INC , COMMISSARIAT ENERGIE ATOMIQUE , PERRUCHOT FRANCOIS , LIU LIANJUN , PACHECO SERGIO , DEFAY EMMANUEL , REY PATRICE
发明人： PERRUCHOT FRANCOIS , LIU LIANJUN , PACHECO SERGIO , DEFAY EMMANUEL , REY PATRICE
IPC分类号： H02N1/00
CPC分类号： B81C1/00666 , B81B2203/0118 , B81C2201/0167 , B81C2201/0169
摘要： A method of forming an electromechanical transducer device (200) comprises forming (500) on a fixed structure (210) a movable structure (203) and an actuating structure of the electromechanical transducer device, wherein the movable structure (203) is arranged in operation of the electromechanical transducer device (200) to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing (504) a stress trimming layer (216) on at least part of the movable structure (203), after providing the stress trimming layer (216), releasing (506) the movable structure (203) from the fixed structure (210) to provide a released electromechanical transducer device (200), and after releasing the movable structure (203), changing (508) stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure (203) is deflected a predetermined amount relative to the fixed structure (210) when the electromechanical transducer device (200) is in an off state.
摘要翻译：一种形成机电换能器装置（200）的方法包括在固定结构（210）上形成（500）可移动结构（203）和机电换能器装置的致动结构，其中可移动结构（203）布置在操作中所述机电换能器装置（200）响应于所述致动结构的致动而相对于所述固定结构可移动。该方法还包括在提供应力修剪层（216）之后，在可移动结构（203）的至少一部分上提供（504）应力修剪层（216），将可移动结构（203）从固定结构（210）以提供释放的机电换能器装置（200），并且在释放可移动结构（203）之后，改变（508）释放的机电换能器装置的应力修剪层中的应力，使得可移动结构（203）当机电换能器装置（200）处于关闭状态时相对于固定结构（210）偏转预定量。

2. 发明申请

WO2010061364A3 ELECTROMECHANICAL TRANSDUCER DEVICE HAVING STRESS-COMPENSATION LAYERS AND METHOD OF MANUFACTURE 审中-公开
标题翻译：具有应力补偿层的机电传感器装置及其制造方法
公开(公告)号：WO2010061364A3
公开(公告)日：2010-07-22
申请号：PCT/IB2009056020
申请日：2009-11-25
申请人： FREESCALE SEMICONDUCTOR INC , COMMISSARIAT ENERGIE ATOMIQUE , PERRUCHOT FRANCOIS , DEFAY EMMANUEL , REY PATRICE , LIU LIANJUN , PACHECO SERGIO
发明人： PERRUCHOT FRANCOIS , DEFAY EMMANUEL , REY PATRICE , LIU LIANJUN , PACHECO SERGIO
IPC分类号： B81B3/00 , H01L41/09
CPC分类号： B81B3/0072 , B81B2201/032 , H01L41/0933 , H01L41/094
摘要： A micro or nano electromechanical transducer device (200) formed on a semiconductor substrate (210) comprises a movable structure (203) which is arranged to be movable in response to actuation of an actuating structure. First (206) and second (207) compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer (202) of the actuating structure such that movement of the movable structure (203) is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer (202) of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device (200) is in an inactive state.
摘要翻译：形成在半导体衬底（210）上的微型或纳米机电换能器装置（200）包括可移动结构（203），其被布置成可响应于致动结构的致动而是可移动的。第一（206）和第二（207）补偿层布置成补偿由机械结构和致动结构的至少一个层（202）的不同的第一和第二热响应特性产生的热效应，可移动结构（203）基本上独立于温度变化并且调节由机械结构和致动结构的至少一个层（202）的不同的第一和第二应力响应特性产生的应力效应，使得可移动结构当机电换能器装置（200）处于非活动状态时相对于基板偏转预定量。

3. 发明申请

WO2010061363A2 ELECTROMECHANICAL TRANSDUCER DEVICE AND METHOD OF FORMING A ELECTROMECHANICAL TRANSDUCER DEVICE 审中-公开
标题翻译：机电传感器装置及形成机电传感器装置的方法
公开(公告)号：WO2010061363A2
公开(公告)日：2010-06-03
申请号：PCT/IB2009056019
申请日：2009-11-25
申请人： FREESCALE SEMICONDUCTOR INC , COMMISSARIAT ENERGIE ATOMIQUE , LIU LIANJUN , PACHECO SERGIO , PERRUCHOT FRANCOIS , DEFAY EMMANUEL , REY PATRICE
发明人： LIU LIANJUN , PACHECO SERGIO , PERRUCHOT FRANCOIS , DEFAY EMMANUEL , REY PATRICE
IPC分类号： B81B3/00 , H01L41/09
CPC分类号： B81B3/0072 , B81B2201/032 , H01L41/0933 , H01L41/094
摘要： A micro or nano electromechanical transducer device (200) formed on a semiconductor substrate comprises a movable structure (203) which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer (204) having a first thermal response characteristic, at least one layer (202) of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer (206). The thermal compensation layer is different to the at least one layer (202) and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.
摘要翻译：形成在半导体衬底上的微型或纳米机电换能器装置（200）包括可移动结构（203），可移动结构（203）被布置成响应于致动结构的致动而可移动。可移动结构包括具有至少一个具有第一热响应特性的机械层（204）的机械结构，所述致动结构的至少一层（202）具有与第一热响应特性不同的第二热响应特性，以及热补偿结构具有至少一个热补偿层（206）。热补偿层与至少一个层（202）不同，并且被布置成补偿由机械层和致动结构的至少一个层产生的热效应，使得可移动结构的运动基本上独立于温度变化。

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