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1. 发明申请

WO2009096647A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2009096647A1
公开(公告)日：2009-08-06
申请号：PCT/KR2008/005531
申请日：2008-09-19
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , LEE, Tae Hee , NAM, Gi Yeon
发明人： KIM, Chang Tae , LEE, Tae Hee , NAM, Gi Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/22
摘要： The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，包括：具有形成在其上的多个突起的衬底，所述多个突起中的每一个具有三个尖锐部分和三个钝角部分; 以及形成在所述基板上并且包括通过电子和空穴的复合产生光的有源层的多个III族氮化物半导体层。

2. 发明申请

WO2009091153A2 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III型氮化物半导体发光器件及其制造方法
公开(公告)号：WO2009091153A2
公开(公告)日：2009-07-23
申请号：PCT/KR2008/007885
申请日：2008-12-31
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , LEE, Tae Hee
发明人： KIM, Chang Tae , LEE, Tae Hee
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32
摘要： The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法，包括：衬底; 形成在基板上的多个III族氮化物半导体层，并且具有通过电子和空穴的复合产生光的有源层; 限定在所述基板和所述多个III族氮化物半导体层之间的边界面; 以及从衬底上的边界表面和多个III族氮化物半导体层形成的一对倾斜表面，以便将在有源层中产生的光发射到外部。

3. 发明申请

WO2009002129A2 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：WO2009002129A2
公开(公告)日：2008-12-31
申请号：PCT/KR2008/003756
申请日：2008-06-27
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , LEE, Tae Hee , JUNG, Hyun Min , NAM, Gi Yeon
发明人： KIM, Chang Tae , LEE, Tae Hee , JUNG, Hyun Min , NAM, Gi Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007
摘要： The present invention relates to a semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a Ill-nitride semiconductor light emitting device which improves external quantum efficiency by forming an irregular portion on a side of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.
摘要翻译：半导体发光器件及其制造方法技术领域本发明涉及一种半导体发光器件及其制造方法，更具体地，涉及通过在半导体层的侧面形成不规则部分来提高外部量子效率的III族氮化物半导体发光器件在基板上形成的突起及其制造方法。

4. 发明申请

WO2008026902A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-氮化物半导体发光器件
公开(公告)号：WO2008026902A1
公开(公告)日：2008-03-06
申请号：PCT/KR2007/004219
申请日：2007-08-31
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , JUNG, Hyun-Min , LEE, Tae-Hee , CHOI, Byeong-Kyun , KIM, Hyun-Suk , NAM, Gi-Yeon
发明人： KIM, Chang Tae , JUNG, Hyun-Min , LEE, Tae-Hee , CHOI, Byeong-Kyun , KIM, Hyun-Suk , NAM, Gi-Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32
摘要： The present invention relates to a Ill-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The Ill-nitride semiconductor light emitting device includes a substrate, a plurality of Ill-nitride semiconductor layers grown on the substrate, and composed of a first Ill-nitride semiconductor layer with first conductivity, a second Ill-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first Ill-nitride semiconductor layer and the second Ill-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of Ill-nitride semiconductor layers.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，特别是其电极结构。该III族氮化物半导体发光器件包括：衬底;生长在衬底上的多个III族氮化物半导体层，并且由具有第一导电性的第一III族氮化物半导体层，具有第二导电性不同的第二III族氮化物半导体层以及位于所述第一III族氮化物半导体层和所述第二III族氮化物半导体层之间的有源层，用于通过电子和空穴的复合产生光，以及穿过所述衬底和所述多个III族氮化物半导体层的孔，氮化物半导体层。

5. 发明申请

WO2006080708A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III-NITRIDE半导体发光器件及其制造方法
公开(公告)号：WO2006080708A1
公开(公告)日：2006-08-03
申请号：PCT/KR2005/003319
申请日：2005-10-06
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , KIM, Keuk , YOO, Tae Kyung
发明人： KIM, Chang Tae , KIM, Keuk , YOO, Tae Kyung
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/32 , H01L33/007 , H01L33/22
摘要： Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.
摘要翻译：本文公开了一种包括多个氮化物半导体层的氮化物半导体发光器件，其包括衬底和沉积在衬底上的有源层，其中衬底设置有突起，以使在有源层中产生的光发射出发光器件和每个突起具有彼此不平行的第一散射面和第二散射面。

6. 发明申请

WO2005008795A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：WO2005008795A1
公开(公告)日：2005-01-27
申请号：PCT/KR2004/001770
申请日：2004-07-16
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , PARK, Joongseo , KIM, Chang Tae
发明人： YOO, Tae Kyung , PARK, Joongseo , KIM, Chang Tae
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , C23C16/303 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/32 , H01S5/32341 , H01S2304/04
摘要： The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semiconductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.
摘要翻译：本发明涉及一种氮化物半导体发光器件，其包括多个氮化物半导体层，其具有使用氮前体氨与肼基材料形成的p型氮化物半导体，肼基材料在热分解时产生与氢原子结合的基团以消除氢自由基，由此不需要随后的用于除去氢的退火工艺，并且防止活性层由于随后的退火工艺而被热损坏。

7. 发明申请

WO2007126282A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2007126282A1
公开(公告)日：2007-11-08
申请号：PCT/KR2007/002120
申请日：2007-04-30
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , CHOI, Byeong Kyun
发明人： KIM, Chang Tae , CHOI, Byeong Kyun
IPC分类号： H01L33/00
CPC分类号： H01L27/15
摘要： The present invention relates to a III-nitride semiconductor light emitting device including a plurality of nitride semiconductor layers including an active Iayer for generating light by recombination of electrons and holes, a light emitting diode region defined by separating the plurality of nitride semiconductor layers by etching, a protection element region separated from the light emitting diode region by the etching, for protecting the light emitting diode region from a voltage applied in a reverse direction, and a heat generation restriction portion formed at the center portion of the plurality of nitride semiconductor layers by the et ching, the light emission being not performed on the heat generation restriction portion, the protection element region being positioned at the heat generation restriction portion.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，其包括多个氮化物半导体层，该氮化物半导体层包括通过电子和空穴的复合产生光的有源层，通过蚀刻分离多个氮化物半导体层而限定的发光二极管区，通过蚀刻与发光二极管区域分离的保护元件区域，用于保护发光二极管区域免受逆向施加的电压;以及形成在多个氮化物半导体层的中心部分的发热限制部分通过等待，在发热限制部分上不进行发光，保护元件区域位于发热限制部分。

8. 发明申请

WO2006022532A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2006022532A1
公开(公告)日：2006-03-02
申请号：PCT/KR2005/002842
申请日：2005-08-26
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , KIM, Chang Tae , KIM, Keuk
发明人： YOO, Tae Kyung , KIM, Chang Tae , KIM, Keuk
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20
摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers epitaxially grown on a substrate, in which the exposed surface including a region for breaking of the light emitting device, the exposed surface of the region for breaking of the light emitting device having protrusions which makes the surface rough, the protrusions being formed by etching with an etching mask.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，其包括在衬底上外延生长的多个III族氮化物半导体层，其中所述暴露表面包括用于使所述发光器件断开的区域，所述区域的暴露表面为了破坏具有使表面粗糙的突起的发光器件，通过用蚀刻掩模蚀刻形成突起。

9. 发明申请

WO2005124880A1 III-NITRIDE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING IT 审中-公开
标题翻译： III-NITRIDE发光二极管及其制造方法
公开(公告)号：WO2005124880A1
公开(公告)日：2005-12-29
申请号：PCT/KR2005/000715
申请日：2005-03-14
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , KIM, Chang Tae , KIM, Keuk
发明人： YOO, Tae Kyung , KIM, Chang Tae , KIM, Keuk
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L33/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00 , H01L2924/00014
摘要： The present invention relates to an AlGalnN-based light-emitting diode and a manufacturing method of the diode comprising a first region comprising a first n-type AlGaInN layer, a first active layer formed on the first n-type AlGaInN layer, a first p-type AlGaInN layer formed on the first active layer, a first p-type electrode electrically connected with the first p-type AlGaInN layer, and a first n-type electrode electrically connected with the first n-type AlGaInN layer; a second region electrically insulated from the first region and comprising a second n-type AlGaInN layer, a second active layer formed on the second n-type AlGaInN layer, a second p-type AlGaInN layer formed on the second active layer, a p-type metal electrode formed on the second p-type AlGaInN layer and forming a Schottky diode with the second p-type AlGaInN layer, a second p-type electrode formed on the p-type metal electrode, and a second n-type electrode electrically connected with the second n-type AlGaInN layer; a first connection for connecting the first p-type electrode to the second n-type electrode; and a second connection for connecting the first n-type electrode to the second p-type electrode.
摘要翻译：本发明涉及一种基于AlGalnN的发光二极管和二极管的制造方法，该二极管包括第一区域，该第一区域包括第一n型AlGaInN层，形成在第一n型AlGaInN层上的第一有源层，第一p型形成在第一有源层上的第一p型AlGaInN层，与第一p型AlGaInN层电连接的第一p型电极和与第一n型AlGaInN层电连接的第一n型电极; 与第一区域电绝缘的第二区域，包括第二n型AlGaInN层，形成在第二n型AlGaInN层上的第二有源层，形成在第二有源层上的第二p型AlGaInN层，形成在第二p型AlGaInN层上并形成具有第二p型AlGaInN层的肖特基二极管的第一p型金属电极，形成在p型金属电极上的第二p型电极和电连接的第二n型电极与第二n型AlGaInN层; 用于将第一p型电极连接到第二n型电极的第一连接; 以及用于将第一n型电极连接到第二p型电极的第二连接。

10. 发明申请

WO2005086244A1 III -NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III -NITRIDE半导体发光器件
公开(公告)号：WO2005086244A1
公开(公告)日：2005-09-15
申请号：PCT/KR2005/000618
申请日：2005-03-04
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , KIM, Chang Tae , PARK, Eun Hyun , JEON, Soo Kun
发明人： YOO, Tae Kyung , KIM, Chang Tae , PARK, Eun Hyun , JEON, Soo Kun
IPC分类号： H01L33/00
CPC分类号： H01L33/32
摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an Si a C b N c (a.≥- 0,b>0,c ≥ O,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a ≥O,b>0,c ≥ 0,a+c>0) layer having an n-type conductivity and a thickness of l0 5ú to 500ú for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a ≥- 0,b>0,c ≥ 0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor. This makes the efficiency of the device degraded. According to the present invention, however, a Si a C b N c (a ≥ 0,b>0,c ≥- 0,a+c>O) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor and a p-side electrode. Therefore, the present invention can solve the conventional problem.
摘要翻译：本发明涉及包含多个III族氮化物半导体层的III族氮化物半导体发光器件，所述III族氮化物半导体层包括通过电子和空穴的复合发射光的有源层，所述多个III族氮化物半导体层具有p型III- 氮化物半导体层，在p型III族氮化物半导体层上生长的SiaCbNc（a => 0，b> 0，c> = O，a + c> 0）层，SiaCbNc（a > = 0，b> 0，c> = 0，a + c> 0）层，对于注入到p型III族氮化物半导体层中的空穴，具有n型导电性和105ú至500μ的厚度以及形成在SiaCbNc（a> = - 0，b> 0，c> = 0，a + c> 0）层上的p侧电极。通常，在III族氮化物半导体发光器件中，如果p侧电极直接形成在p型氮化物半导体上，则由于p型氮化物半导体的高能带隙和低掺杂效率而产生高接触电阻。这使得设备的效率降低。然而，根据本发明，可以掺杂高浓度的SiaCbNc（a> = 0，b> 0，c> = - ，a + c> O）层介于p型氮化物半导体和p侧电极。因此，本发明可以解决常规问题。

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