专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011046372A3 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
标题翻译：第III组氮化物半导体发光元件
公开(公告)号：WO2011046372A3
公开(公告)日：2011-07-07
申请号：PCT/KR2010007032
申请日：2010-10-14
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , KIM HYUN SUK , NAM GI YEON , LEE TAE HEE , AN HYUN SU , KIM JONG HYOUK
发明人： KIM CHANG TAE , KIM HYUN SUK , NAM GI YEON , LEE TAE HEE , AN HYUN SU , KIM JONG HYOUK
IPC分类号： H01L33/38
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0091
摘要： The present disclosure relates to a group III nitride semiconductor light emitting element comprising: a plurality of group III nitride semiconductor layers comprising an active layer which generates light by using electron-hole recombination, and group III nitride semiconductor layers respectively disposed on the upper and lower parts of the active layer; a light-transmitting electrode having an upper surface and a lower surface, which is positioned on top of the plurality of group III nitride semiconductor layers and is formed with a recess such that the upper layer is removed while the lower layer is unexposed; and projections which are formed on the floor surface of the recess and scatter the light generated in the active layer.
摘要翻译：本公开涉及一种III族氮化物半导体发光元件，其包括：多个III族氮化物半导体层，其包含通过使用电子 - 空穴复合产生光的有源层，以及分别设置在上部和下部的III族氮化物半导体层活性层的一部分; 位于所述多个III族氮化物半导体层的顶部上的具有上表面和下表面的透光电极，并且形成有使所述上层被去除而所述下层未被暴露的凹部; 以及形成在凹部的地板表面上的突起，并且散射在有源层中产生的光。

2. 发明申请

WO2009069885A1 SYSTEM AND METHOD OF MANAGING VEHICLE AND DRIVER INFORMATION 审中-公开
标题翻译：车辆和驾驶员信息管理系统及方法
公开(公告)号：WO2009069885A1
公开(公告)日：2009-06-04
申请号：PCT/KR2008/005459
申请日：2008-09-16
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun Suk , YOON, Dae Sub , CHOI, Jong-Woo , KIM, Ju Wan
发明人： KIM, Hyun Suk , YOON, Dae Sub , CHOI, Jong-Woo , KIM, Ju Wan
IPC分类号： H04W4/04
CPC分类号： G07C5/008 , B60W40/09 , B60W2050/0079 , G07C5/085 , G07C5/0891
摘要： The present invention relates a system and method of managing vehicle and driver information. According to the present invention, internal status information and external environment information of a vehicle, and a driver's behavior information, are gathered to calculate the driver's workload that is required for careful driving and inform the workload to the driver, which leads to careful driving. Further, the information input to the terminal is sent to an observation center without manual control of the driver so that the observation center can collect and store the information in real time. Furthermore, the driving history, driving habits of the driver, and the amount of consumed fuel can be provided through the terminal and the driver access to the server in the observation center, which improves the driving habits of the driver and provides information about economical driving.
摘要翻译：本发明涉及一种管理车辆和驾驶员信息的系统和方法。根据本发明，收集车辆的内部状态信息和外部环境信息以及驾驶员的行为信息，以计算驾驶员仔细驾驶所需的工作量，并将驾驶员的工作量通知驾驶员，这导致仔细驾驶。此外，输入到终端的信息被发送到观察中心，而不需要对驾驶员进行手动控制，使得观察中心可以实时地收集和存储信息。此外，可以通过终端和驾驶员访问观察中心的服务器来提供驾驶历史，驾驶员的驾驶习惯和消耗的燃料量，这提高了驾驶员的驾驶习惯，并提供关于经济驾驶的信息。

3. 发明申请

WO2007119919A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III-NITRIDE半导体发光器件及其制造方法
公开(公告)号：WO2007119919A1
公开(公告)日：2007-10-25
申请号：PCT/KR2006/005755
申请日：2006-12-27
申请人： EPIVALLEY CO., LTD. , KIM, Chang-Tae , JUNG, Hyun-Min , JEON, Eui-Gue , KIM, Hyun-Suk , NAM, Gi- Yeon , CHOI, Byeong-Kyun
发明人： KIM, Chang-Tae , JUNG, Hyun-Min , JEON, Eui-Gue , KIM, Hyun-Suk , NAM, Gi- Yeon , CHOI, Byeong-Kyun
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/20 , H01L33/32 , H01L33/382
摘要： The present invention discloses a Ill-nitride compound semiconductor light emitting device and a method of manufacturing the same. The Ill-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers.
摘要翻译：本发明公开了一种III族氮化物化合物半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有凹槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且包括通过电子和空穴的复合产生光的有源层和形成的开口沿着多个氮化物化合物半导体层的沟槽。

4. 发明申请

WO2005022927A1 DISPLAY SYSTEM 审中-公开
标题翻译：显示系统
公开(公告)号：WO2005022927A1
公开(公告)日：2005-03-10
申请号：PCT/KR2004/001719
申请日：2004-07-12
申请人： SAMSUNG ELECTRONICS, CO., LTD. , KIM, Hyun-Suk , PARK, Se-Woong , PARK, Kil-Soo , KIM, Jin-Bog , SHIN, Man-young
发明人： KIM, Hyun-Suk , PARK, Se-Woong , PARK, Kil-Soo , KIM, Jin-Bog , SHIN, Man-young
IPC分类号： H04N9/64
CPC分类号： H04N9/643 , H04N1/628 , H04N9/68
摘要： A display system to display an image resulting from an image signal, comprising a color converting part which converts the image signal to change a color distributed in a color area grouped by a plurality of colors and formed as one of a variety of geometric shapes in a color space and the color is changed within the color area. The user interface generator provides one or more user interface components to visually accommodate the color change in the respective color areas without affecting the rest of the image.
摘要翻译：一种用于显示由图像信号产生的图像的显示系统，包括：颜色转换部分，其转换图像信号，以改变分布在由多种颜色分组的颜色区域中的颜色，并且形成为各种几何形状之一颜色空间和颜色在颜色区域内改变。用户界面生成器提供一个或多个用户界面组件以在视觉上容纳各个颜色区域中的颜色变化，而不影响图像的其余部分。

5. 发明申请

WO2011052972A3 X-RAY SOURCE HAVING CARBON NANO-TUBE (CNT) YARN, X-RAY GENERATING SYSTEM AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有碳纳米管（CNT）纱，X射线发生系统的X射线源及其制造方法
公开(公告)号：WO2011052972A3
公开(公告)日：2011-09-15
申请号：PCT/KR2010007381
申请日：2010-10-26
申请人： WONKWANG UNIV CT IND ACAD COOP , LEE CHOONG HUN , KIM HYUN SUK , KONG BYUNG YUN
发明人： LEE CHOONG HUN , KIM HYUN SUK , KONG BYUNG YUN
IPC分类号： H05G1/54 , H05G1/02
CPC分类号： H01J35/065
摘要： The present invention relates to an X-ray source having a carbon nano-tube (CNT) yarn, an X-ray generating system and a manufacturing method thereof. The present invention is to restrain damage to the carbon nano-tube yarn due to the stress acting on the carbon nano-tube yarn in the process of generating an X-ray. The X-ray source according to the present invention includes: a carbon nano-tube yarn having an outer peripheral surface; and an insulating protection layer formed on the outer peripheral surface of the carbon nano-tube yarn. By forming such an insulating protection layer on the carbon nano-tube yarn, it is possible to restrain the damage such as un-twisted portions due to a high current, arcing or stress acting on the carbon nano-tube yarn in the process of generating an X-ray, improve the field emission effect of the carbon nano-tube yarn, and extend the lifespan thereof.
摘要翻译：本发明涉及具有碳纳米管（CNT）纱线的X射线源，X射线产生系统及其制造方法。本发明是为了抑制由于在生成X射线的过程中作用在碳纳米管纱上的应力而导致的碳纳米管纱的损伤。根据本发明的X射线源包括：具有外周面的碳纳米管纱; 以及形成在碳纳米管纱的外周面上的绝缘保护层。通过在碳纳米管纱上形成这样的绝缘保护层，可以抑制作用在碳纳米管纱上的高电流，电弧或应力等产生不扭曲部分的损伤 X射线，提高碳纳米管纱线的场发射效果，延长其寿命。

6. 发明申请

WO2011052971A2 X-RAY GENERATING SYSTEM USING CARBON NANO-TUBE (CNT) YARN 审中-公开
标题翻译：使用碳纳米管（CNT）纱线的X射线发生系统
公开(公告)号：WO2011052971A2
公开(公告)日：2011-05-05
申请号：PCT/KR2010007380
申请日：2010-10-26
申请人： WONKWANG UNIV CT IND ACAD COOP , LEE CHOONG HUN , KIM HYUN SUK , KONG BYUNG YUN
发明人： LEE CHOONG HUN , KIM HYUN SUK , KONG BYUNG YUN
IPC分类号： H05G1/34 , H05G1/00
CPC分类号： H01J35/065 , H01J2235/068
摘要： The present invention relates to an X-ray generating system using a carbon nano-tube (CNT) yarn as a cathode. According to the present invention, a cathode section has the carbon nano-tube yarn as a cathode and emits electrons from the carbon nano-tube yarn. Additionally, an anode section is disposed above the carbon nano-tube yarn and collides with the electrons emitted from the carbon nano-tube yarn, thereby generating X-rays. In this situation, the carbon nano-tube yarn may be mounted horizontally or vertically with respect to the anode section, wherein the electrons generate linear X-rays in the former case and point, X-rays in the latter case. The anode section may be mounted above the carbon nano-tube yarn as mentioned above, and may be mounted in the tube shape surrounding the carbon nano-tube yarn. An X-ray generating system with the tubular anode section may be manufactured in super miniature or portable type.
摘要翻译：本发明涉及一种使用碳纳米管（CNT）纱线作为阴极的X射线发生系统。根据本发明，阴极部分具有碳纳米管纱线作为阴极并且从碳纳米管纱线发射电子。此外，阳极部分设置在碳纳米管纱线上方并与碳纳米管纱线发射的电子碰撞，由此产生X射线。在这种情况下，碳纳米管纱线可以相对于阳极部分水平或垂直安装，其中电子在前一种情况下产生线性X射线并且在后一种情况下指向X射线。如上所述，阳极部分可以安装在碳纳米管纱线的上方，并且可以以围绕碳纳米管纱线的管状安装。具有管状阳极部分的X射线发生系统可以以超小型或便携式制造。

7. 发明申请

WO2009154409A3 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2009154409A3
公开(公告)日：2010-03-25
申请号：PCT/KR2009003267
申请日：2009-06-18
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NAM GI YEON , KIM HYUN SUK
发明人： KIM CHANG TAE , NAM GI YEON , KIM HYUN SUK
IPC分类号： H01L33/36 , H01L33/20 , H01L33/38
CPC分类号： H01L33/20 , H01L33/38
摘要： The present invention relates to a semiconductor light emitting device including: a plurality of semiconductor layers having upper surfaces and lower surfaces and active layers for generating light through the use of recombination; a substrate disposed at the side of the lower surfaces of the semiconductor layers; a bonding wire electrically connected to the semiconductor layers at the side of the upper surfaces of the semiconductor layers, and used for supplying a current for recombination; and a recess formed at a region corresponding to the part of the bonding wire positioned at the side of the upper surfaces of the semiconductor layers such that the recess suppresses the generation of light in said region.
摘要翻译：本发明涉及一种半导体发光器件，包括：具有上表面和下表面的多个半导体层和用于通过使用复合产生光的有源层; 设置在半导体层的下表面侧的基板; 电连接到半导体层的上表面一侧的半导体层并用于提供用于复合的电流的接合线; 以及形成在与位于半导体层的上表面侧的接合线的部分相对应的区域处的凹部，使得凹部抑制所述区域中的光的产生。

8. 发明申请

WO2008026902A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-氮化物半导体发光器件
公开(公告)号：WO2008026902A1
公开(公告)日：2008-03-06
申请号：PCT/KR2007/004219
申请日：2007-08-31
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , JUNG, Hyun-Min , LEE, Tae-Hee , CHOI, Byeong-Kyun , KIM, Hyun-Suk , NAM, Gi-Yeon
发明人： KIM, Chang Tae , JUNG, Hyun-Min , LEE, Tae-Hee , CHOI, Byeong-Kyun , KIM, Hyun-Suk , NAM, Gi-Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32
摘要： The present invention relates to a Ill-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The Ill-nitride semiconductor light emitting device includes a substrate, a plurality of Ill-nitride semiconductor layers grown on the substrate, and composed of a first Ill-nitride semiconductor layer with first conductivity, a second Ill-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first Ill-nitride semiconductor layer and the second Ill-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of Ill-nitride semiconductor layers.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，特别是其电极结构。该III族氮化物半导体发光器件包括：衬底;生长在衬底上的多个III族氮化物半导体层，并且由具有第一导电性的第一III族氮化物半导体层，具有第二导电性不同的第二III族氮化物半导体层以及位于所述第一III族氮化物半导体层和所述第二III族氮化物半导体层之间的有源层，用于通过电子和空穴的复合产生光，以及穿过所述衬底和所述多个III族氮化物半导体层的孔，氮化物半导体层。

9. 发明申请

WO2008001990A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III型氮化物半导体发光器件及其制造方法
公开(公告)号：WO2008001990A1
公开(公告)日：2008-01-03
申请号：PCT/KR2006/005756
申请日：2006-12-27
申请人： EPIVALLEY CO., LTD. , KIM, Chang-Tae , JUNG, Hyun-Min , KIM, Hyun-Suk
发明人： KIM, Chang-Tae , JUNG, Hyun-Min , KIM, Hyun-Suk
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention discloses a Ill-nitride (compound) semiconductor light emitting device and a method for manufacturing the same. The Ill-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and having a first nitride compound semiconductor layer with first conductivity, a second nitride compound semi¬ conductor layer with second conductivity different from the first conductivity, and an active layer interposed between the first nitride compound semiconductor layer and the second nitride compound semiconductor layer, for generating light by recombination, a first electrode electrically contacting the first nitride compound semiconductor layer through the groove, a second electrode formed on the plurality of nitride compound semiconductor layers, and a protrusion formed on the periphery of the second electrode, for forming a rough surface.
摘要翻译：本发明公开了一种III族氮化物（化合物）半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有凹槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且具有第一导电性的第一氮化物半导体层，第二氮化物半导体具有不同于第一导电性的第二电导率的层;以及插入在第一氮化物化合物半导体层和第二氮化物化合物半导体层之间的有源层，用于通过复合产生光，第一电极通过沟槽与第一氮化物化合物半导体层电接触，形成在所述多个氮化物化合物半导体层上的第二电极，以及形成在所述第二电极的周围的用于形成粗糙表面的突起。

10. 发明申请

WO2004113538A1 GENE CODING MANNANASE AND RECOMBINANT MANNANASE EXPRESSED FROM TRANSFORMANT THEREOF 审中-公开
标题翻译：转基因表达的基因编码曼替尼和重组人血红素
公开(公告)号：WO2004113538A1
公开(公告)日：2004-12-29
申请号：PCT/KR2004/001520
申请日：2004-06-24
申请人： CTC BIO, INC. , YOON, Ki-Hong , CHO, Ki-Haeng , CHOI, Joon-Ho , LEE, Mi-Sung , RYU, Kyung-Sook , KWEUN, Min-A , KIM, Hyun-Suk
发明人： YOON, Ki-Hong , CHO, Ki-Haeng , CHOI, Joon-Ho , LEE, Mi-Sung , RYU, Kyung-Sook , KWEUN, Min-A , KIM, Hyun-Suk
IPC分类号： C12N15/55
CPC分类号： C12Y302/01025 , C12N9/2491
摘要： Disclosed is a novel gene coding for mannanase, derived from Bacillus licheniformis WL-12, a recombinant plasmid carrying the gene, and an E. coli transformant harboring the recombinant plasmid. With ability to degrade galactomannan into mannose, mannobiose and mannotriose, the mannanase is highly activity at neutral pH values and moderate temperatures, similar to the physiological conditions in animals.
摘要翻译：公开了一种编码甘露聚糖酶的新基因，其衍生自地衣芽孢杆菌WL-12，携带该基因的重组质粒和携带重组质粒的大肠杆菌转化体。具有将半乳甘露聚糖降解为甘露糖，甘露糖和甘露三糖的能力，甘露聚糖酶在中性pH值和中等温度下具有高活性，类似于动物的生理条件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式