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1. 发明申请

WO2005086244A1 III -NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III -NITRIDE半导体发光器件
公开(公告)号：WO2005086244A1
公开(公告)日：2005-09-15
申请号：PCT/KR2005/000618
申请日：2005-03-04
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , KIM, Chang Tae , PARK, Eun Hyun , JEON, Soo Kun
发明人： YOO, Tae Kyung , KIM, Chang Tae , PARK, Eun Hyun , JEON, Soo Kun
IPC分类号： H01L33/00
CPC分类号： H01L33/32
摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an Si a C b N c (a.≥- 0,b>0,c ≥ O,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a ≥O,b>0,c ≥ 0,a+c>0) layer having an n-type conductivity and a thickness of l0 5ú to 500ú for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a ≥- 0,b>0,c ≥ 0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor. This makes the efficiency of the device degraded. According to the present invention, however, a Si a C b N c (a ≥ 0,b>0,c ≥- 0,a+c>O) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor and a p-side electrode. Therefore, the present invention can solve the conventional problem.
摘要翻译：本发明涉及包含多个III族氮化物半导体层的III族氮化物半导体发光器件，所述III族氮化物半导体层包括通过电子和空穴的复合发射光的有源层，所述多个III族氮化物半导体层具有p型III- 氮化物半导体层，在p型III族氮化物半导体层上生长的SiaCbNc（a => 0，b> 0，c> = O，a + c> 0）层，SiaCbNc（a > = 0，b> 0，c> = 0，a + c> 0）层，对于注入到p型III族氮化物半导体层中的空穴，具有n型导电性和105ú至500μ的厚度以及形成在SiaCbNc（a> = - 0，b> 0，c> = 0，a + c> 0）层上的p侧电极。通常，在III族氮化物半导体发光器件中，如果p侧电极直接形成在p型氮化物半导体上，则由于p型氮化物半导体的高能带隙和低掺杂效率而产生高接触电阻。这使得设备的效率降低。然而，根据本发明，可以掺杂高浓度的SiaCbNc（a> = 0，b> 0，c> = - ，a + c> O）层介于p型氮化物半导体和p侧电极。因此，本发明可以解决常规问题。

2. 发明申请

WO2005004247A1 III-NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE化合物半导体发光器件
公开(公告)号：WO2005004247A1
公开(公告)日：2005-01-13
申请号：PCT/KR2004/001625
申请日：2004-07-02
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , KIM, Keuk , JEON, Soo Kun , JANG, Pil Guk , KIM, Jong Won
发明人： KIM, Chang Tae , KIM, Keuk , JEON, Soo Kun , JANG, Pil Guk , KIM, Jong Won
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L33/32
摘要： The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type AI(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type AI(x)ln(y)Ga(1-x-y)N layer, in which the n-type AI(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.
摘要翻译：本发明涉及具有高外量子效率的III族氮化物半导体发光器件，提供了一种III族氮化物化合物半导体发光器件，其包括通过电子和空穴的复合产生光并含有镓和氮的有源层，在有源层生长之前外延生长的n型Al（x）ln（y）Ga（1-xy）N层，以及与n型Al（x）ln（y）Ga电接触的n型电极（1-xy）N层，其中n型Al（x）ln（y）Ga（1-xy）N层具有通过蚀刻暴露的表面，并且包括用于划线和断开器件的区域，以及用于与n型电极接触的区域，并且用于划线和断裂器件的区域的表面被粗糙化，从而可以增加发光器件的外部量子效率。

3. 发明申请

WO2007133044A1 MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE AND III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体衬底和III型氮化物半导体发光器件的制造方法
公开(公告)号：WO2007133044A1
公开(公告)日：2007-11-22
申请号：PCT/KR2007/002388
申请日：2007-05-15
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , JEON, Soo Kun , JUNG, Hyun-Min
发明人： KIM, Chang Tae , JEON, Soo Kun , JUNG, Hyun-Min
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/0254 , H01L21/02658 , H01L21/02664
摘要： The present invention relates to a manufacturing method of a nitride semiconductor substrate and a manufacturing method of a Ill-nitride semiconductor light emitting device using the same. The manufacturing method of the nitride semiconductor substrate for growing the Ill-nitride semiconductor light emitting device from a hetero-substrate includes a first step of forming a nitride semiconductor layer on the hetero-substrate with a groove formed thereat and a sacrificial layer formed on a top face, and a second step of separating the nitride semiconductor layer side from the hetero-substrate side by removing the sacrificial layer.
摘要翻译：本发明涉及一种氮化物半导体衬底的制造方法和使用其的III族氮化物半导体发光器件的制造方法。用于从异质衬底生长III族氮化物半导体发光器件的氮化物半导体衬底的制造方法包括：在异质衬底上形成氮化物半导体层的第一步骤，其上形成有沟槽，并且形成在其上的牺牲层以及通过去除牺牲层将氮化物半导体层侧与异质衬底侧分离的第二步骤。

4. 发明申请

WO2004112157A1 III-NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE WITH MESH TYPE ELECTRODE 审中-公开
标题翻译：具有MESH型电极的III-NITRIDE化合物半导体发光器件
公开(公告)号：WO2004112157A1
公开(公告)日：2004-12-23
申请号：PCT/KR2004/001318
申请日：2004-06-03
申请人： EPIVALLEY CO., LTD. , JEON, Soo Kun , KIM, Chang Tae
发明人： JEON, Soo Kun , KIM, Chang Tae
IPC分类号： H01L33/00
CPC分类号： H01L33/387
摘要： According to the present invention, the current spreading occurs mainly through the transparent electrode layer (27) rather than the upper contact layer (15). For this reason, sufficient current spreading can be achieved even when the size of each opening is not small, and the present invention provides advantages in that the mesh-type electrode layer (27) does not need to be finely formed as in the prior art, and thus, a portion covered by the mesh-type electrode layer (27) is reduced, resulting in an increase in the external quantum efficiency of the device. Particularly, even when the thickness of the upper contact layer (15) is thin (
摘要翻译：根据本发明，电流扩散主要通过透明电极层（27）而不是上接触层（15）发生。因此，即使每个开口的尺寸不小，也可以实现足够的电流扩展，本发明的优点在于，如现有技术那样，网状电极层（27）不需要精细地形成因此，由网状电极层（27）覆盖的部分被减少，导致器件的外部量子效率的增加。特别是，即使当上接触层（15）的厚度薄（<0.5μm）时，网状电极层（27）中的每个开口的尺寸可以增加到大于4μm，从而复杂不需要进行图案化处理。

5. 发明申请

WO2006080708A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III-NITRIDE半导体发光器件及其制造方法
公开(公告)号：WO2006080708A1
公开(公告)日：2006-08-03
申请号：PCT/KR2005/003319
申请日：2005-10-06
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , KIM, Keuk , YOO, Tae Kyung
发明人： KIM, Chang Tae , KIM, Keuk , YOO, Tae Kyung
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/32 , H01L33/007 , H01L33/22
摘要： Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.
摘要翻译：本文公开了一种包括多个氮化物半导体层的氮化物半导体发光器件，其包括衬底和沉积在衬底上的有源层，其中衬底设置有突起，以使在有源层中产生的光发射出发光器件和每个突起具有彼此不平行的第一散射面和第二散射面。

6. 发明申请

WO2009096647A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2009096647A1
公开(公告)日：2009-08-06
申请号：PCT/KR2008/005531
申请日：2008-09-19
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , LEE, Tae Hee , NAM, Gi Yeon
发明人： KIM, Chang Tae , LEE, Tae Hee , NAM, Gi Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/22
摘要： The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，包括：具有形成在其上的多个突起的衬底，所述多个突起中的每一个具有三个尖锐部分和三个钝角部分; 以及形成在所述基板上并且包括通过电子和空穴的复合产生光的有源层的多个III族氮化物半导体层。

7. 发明申请

WO2009091153A2 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III型氮化物半导体发光器件及其制造方法
公开(公告)号：WO2009091153A2
公开(公告)日：2009-07-23
申请号：PCT/KR2008/007885
申请日：2008-12-31
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , LEE, Tae Hee
发明人： KIM, Chang Tae , LEE, Tae Hee
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32
摘要： The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法，包括：衬底; 形成在基板上的多个III族氮化物半导体层，并且具有通过电子和空穴的复合产生光的有源层; 限定在所述基板和所述多个III族氮化物半导体层之间的边界面; 以及从衬底上的边界表面和多个III族氮化物半导体层形成的一对倾斜表面，以便将在有源层中产生的光发射到外部。

8. 发明申请

WO2005008795A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：WO2005008795A1
公开(公告)日：2005-01-27
申请号：PCT/KR2004/001770
申请日：2004-07-16
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , PARK, Joongseo , KIM, Chang Tae
发明人： YOO, Tae Kyung , PARK, Joongseo , KIM, Chang Tae
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , C23C16/303 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/32 , H01S5/32341 , H01S2304/04
摘要： The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semiconductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.
摘要翻译：本发明涉及一种氮化物半导体发光器件，其包括多个氮化物半导体层，其具有使用氮前体氨与肼基材料形成的p型氮化物半导体，肼基材料在热分解时产生与氢原子结合的基团以消除氢自由基，由此不需要随后的用于除去氢的退火工艺，并且防止活性层由于随后的退火工艺而被热损坏。

9. 发明申请

WO2007126282A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2007126282A1
公开(公告)日：2007-11-08
申请号：PCT/KR2007/002120
申请日：2007-04-30
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , CHOI, Byeong Kyun
发明人： KIM, Chang Tae , CHOI, Byeong Kyun
IPC分类号： H01L33/00
CPC分类号： H01L27/15
摘要： The present invention relates to a III-nitride semiconductor light emitting device including a plurality of nitride semiconductor layers including an active Iayer for generating light by recombination of electrons and holes, a light emitting diode region defined by separating the plurality of nitride semiconductor layers by etching, a protection element region separated from the light emitting diode region by the etching, for protecting the light emitting diode region from a voltage applied in a reverse direction, and a heat generation restriction portion formed at the center portion of the plurality of nitride semiconductor layers by the et ching, the light emission being not performed on the heat generation restriction portion, the protection element region being positioned at the heat generation restriction portion.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，其包括多个氮化物半导体层，该氮化物半导体层包括通过电子和空穴的复合产生光的有源层，通过蚀刻分离多个氮化物半导体层而限定的发光二极管区，通过蚀刻与发光二极管区域分离的保护元件区域，用于保护发光二极管区域免受逆向施加的电压;以及形成在多个氮化物半导体层的中心部分的发热限制部分通过等待，在发热限制部分上不进行发光，保护元件区域位于发热限制部分。

10. 发明申请

WO2006022532A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2006022532A1
公开(公告)日：2006-03-02
申请号：PCT/KR2005/002842
申请日：2005-08-26
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , KIM, Chang Tae , KIM, Keuk
发明人： YOO, Tae Kyung , KIM, Chang Tae , KIM, Keuk
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/20
摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers epitaxially grown on a substrate, in which the exposed surface including a region for breaking of the light emitting device, the exposed surface of the region for breaking of the light emitting device having protrusions which makes the surface rough, the protrusions being formed by etching with an etching mask.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，其包括在衬底上外延生长的多个III族氮化物半导体层，其中所述暴露表面包括用于使所述发光器件断开的区域，所述区域的暴露表面为了破坏具有使表面粗糙的突起的发光器件，通过用蚀刻掩模蚀刻形成突起。

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