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1. 发明申请

WO2007133044A1 MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE AND III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体衬底和III型氮化物半导体发光器件的制造方法
公开(公告)号：WO2007133044A1
公开(公告)日：2007-11-22
申请号：PCT/KR2007/002388
申请日：2007-05-15
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , JEON, Soo Kun , JUNG, Hyun-Min
发明人： KIM, Chang Tae , JEON, Soo Kun , JUNG, Hyun-Min
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/0254 , H01L21/02658 , H01L21/02664
摘要： The present invention relates to a manufacturing method of a nitride semiconductor substrate and a manufacturing method of a Ill-nitride semiconductor light emitting device using the same. The manufacturing method of the nitride semiconductor substrate for growing the Ill-nitride semiconductor light emitting device from a hetero-substrate includes a first step of forming a nitride semiconductor layer on the hetero-substrate with a groove formed thereat and a sacrificial layer formed on a top face, and a second step of separating the nitride semiconductor layer side from the hetero-substrate side by removing the sacrificial layer.
摘要翻译：本发明涉及一种氮化物半导体衬底的制造方法和使用其的III族氮化物半导体发光器件的制造方法。用于从异质衬底生长III族氮化物半导体发光器件的氮化物半导体衬底的制造方法包括：在异质衬底上形成氮化物半导体层的第一步骤，其上形成有沟槽，并且形成在其上的牺牲层以及通过去除牺牲层将氮化物半导体层侧与异质衬底侧分离的第二步骤。

2. 发明申请

WO2007119919A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III-NITRIDE半导体发光器件及其制造方法
公开(公告)号：WO2007119919A1
公开(公告)日：2007-10-25
申请号：PCT/KR2006/005755
申请日：2006-12-27
申请人： EPIVALLEY CO., LTD. , KIM, Chang-Tae , JUNG, Hyun-Min , JEON, Eui-Gue , KIM, Hyun-Suk , NAM, Gi- Yeon , CHOI, Byeong-Kyun
发明人： KIM, Chang-Tae , JUNG, Hyun-Min , JEON, Eui-Gue , KIM, Hyun-Suk , NAM, Gi- Yeon , CHOI, Byeong-Kyun
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/20 , H01L33/32 , H01L33/382
摘要： The present invention discloses a Ill-nitride compound semiconductor light emitting device and a method of manufacturing the same. The Ill-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers.
摘要翻译：本发明公开了一种III族氮化物化合物半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有凹槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且包括通过电子和空穴的复合产生光的有源层和形成的开口沿着多个氮化物化合物半导体层的沟槽。

3. 发明申请

WO2007089077A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译： III型氮化物半导体发光器件及其制造方法
公开(公告)号：WO2007089077A1
公开(公告)日：2007-08-09
申请号：PCT/KR2006/005754
申请日：2006-12-27
申请人： EPIVALLEY CO., LTD. , KIM, Chang-Tae , KIM, Jong-Won , JEON, Eui-Gue , JUNG, Hyun-Min , NAM, Gi- Yeon
发明人： KIM, Chang-Tae , KIM, Jong-Won , JEON, Eui-Gue , JUNG, Hyun-Min , NAM, Gi- Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/382
摘要： The present invention discloses a Ill-nitride compound semiconductor light emitting device and a method of manufacturing the same. In the method of manufacturing the Ill-nitride compound semiconductor light emitting device including a plurality of Ill-nitride compound semiconductor layers which are grown on a substrate and which include an active layer for generating light by recombination of electron and hole, the method includes a first step for forming a groove in the substrate, a second step for forming the plurality of Ill-nitride compound semiconductor layers on the substrate with the groove formed therein, a third step for polishing the resulting structure so that the plurality of Ill-nitride compound semiconductor layers formed on the substrate can be exposed through the groove, and a fourth step for electrically connecting an electrode to the Ill-nitride compound semiconductor layer through the groove.
摘要翻译：本发明公开了一种III族氮化物化合物半导体发光器件及其制造方法。在制造包括在基板上生长的多个III族氮化物化合物半导体层的III族氮化物化合物半导体发光器件的制造方法中，包括通过电子和空穴的复合产生光的有源层，该方法包括：用于在衬底中形成沟槽的第一步骤，用于在其上形成有沟槽的衬底上形成多个III族氮化物化合物半导体层的第二步骤，用于抛光所得结构的第三步骤，使得多个III族氮化物化合物形成在基板上的半导体层可以通过沟槽露出，以及通过沟槽将电极与III族氮化物化合物半导体层电连接的第四步骤。

4. 发明申请

WO2008026902A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-氮化物半导体发光器件
公开(公告)号：WO2008026902A1
公开(公告)日：2008-03-06
申请号：PCT/KR2007/004219
申请日：2007-08-31
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , JUNG, Hyun-Min , LEE, Tae-Hee , CHOI, Byeong-Kyun , KIM, Hyun-Suk , NAM, Gi-Yeon
发明人： KIM, Chang Tae , JUNG, Hyun-Min , LEE, Tae-Hee , CHOI, Byeong-Kyun , KIM, Hyun-Suk , NAM, Gi-Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32
摘要： The present invention relates to a Ill-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The Ill-nitride semiconductor light emitting device includes a substrate, a plurality of Ill-nitride semiconductor layers grown on the substrate, and composed of a first Ill-nitride semiconductor layer with first conductivity, a second Ill-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first Ill-nitride semiconductor layer and the second Ill-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of Ill-nitride semiconductor layers.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，特别是其电极结构。该III族氮化物半导体发光器件包括：衬底;生长在衬底上的多个III族氮化物半导体层，并且由具有第一导电性的第一III族氮化物半导体层，具有第二导电性不同的第二III族氮化物半导体层以及位于所述第一III族氮化物半导体层和所述第二III族氮化物半导体层之间的有源层，用于通过电子和空穴的复合产生光，以及穿过所述衬底和所述多个III族氮化物半导体层的孔，氮化物半导体层。

5. 发明申请

WO2008001990A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III型氮化物半导体发光器件及其制造方法
公开(公告)号：WO2008001990A1
公开(公告)日：2008-01-03
申请号：PCT/KR2006/005756
申请日：2006-12-27
申请人： EPIVALLEY CO., LTD. , KIM, Chang-Tae , JUNG, Hyun-Min , KIM, Hyun-Suk
发明人： KIM, Chang-Tae , JUNG, Hyun-Min , KIM, Hyun-Suk
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention discloses a Ill-nitride (compound) semiconductor light emitting device and a method for manufacturing the same. The Ill-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and having a first nitride compound semiconductor layer with first conductivity, a second nitride compound semi¬ conductor layer with second conductivity different from the first conductivity, and an active layer interposed between the first nitride compound semiconductor layer and the second nitride compound semiconductor layer, for generating light by recombination, a first electrode electrically contacting the first nitride compound semiconductor layer through the groove, a second electrode formed on the plurality of nitride compound semiconductor layers, and a protrusion formed on the periphery of the second electrode, for forming a rough surface.
摘要翻译：本发明公开了一种III族氮化物（化合物）半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有凹槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且具有第一导电性的第一氮化物半导体层，第二氮化物半导体具有不同于第一导电性的第二电导率的层;以及插入在第一氮化物化合物半导体层和第二氮化物化合物半导体层之间的有源层，用于通过复合产生光，第一电极通过沟槽与第一氮化物化合物半导体层电接触，形成在所述多个氮化物化合物半导体层上的第二电极，以及形成在所述第二电极的周围的用于形成粗糙表面的突起。

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