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1. 发明申请

WO2012110357A1 COATED SPEAKER DOME AND COATED DIAMOND PRODUCTS 审中-公开
标题翻译：涂层扬声器和面漆金刚石产品
公开(公告)号：WO2012110357A1
公开(公告)日：2012-08-23
申请号：PCT/EP2012/052020
申请日：2012-02-07
申请人： ELEMENT SIX LIMITED , INGLIS, Paul, Nicolas , BRANDON, John Robert , PERKINS, Neil
发明人： INGLIS, Paul, Nicolas , BRANDON, John Robert , PERKINS, Neil
IPC分类号： H04R7/12
CPC分类号： H04R7/127 , H04R7/122 , H04R7/125 , H04R31/003 , H04R2307/023 , H04R2307/027
摘要： The invention relates to a speaker dome comprising: a polycrystalline diamond dome body formed of a material of high stiffness with a Young's modulus greater than 50 GPa and having respective inner and outer surfaces; and a coating on at least one side of the dome body, wherein the coating comprises an optically refractive metal compound layer which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the layer. The invention also relates to a diamond component comprising: a diamond body; and a coating on at least one side of the diamond body, wherein the coating comprises at least two layers including a first layer bonded to the at least one side of the diamond body and a second layer disposed over the first layer, the second layer being an optically refractive metal compound coating which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the second layer.
摘要翻译：本发明涉及一种扬声器圆顶，包括：多晶金刚石圆顶体，其由高刚度的材料形成，杨氏模量大于50GPa，并具有相应的内表面和外表面; 以及在所述圆顶体的至少一侧上的涂层，其中所述涂层包括半透明的光学折射金属化合物层，并且通过所述层的前表面和后表面的反射光的干涉而形成一种或多种颜色。本发明还涉及一种金刚石组件，其包括：金刚石体; 以及在所述金刚石体的至少一侧上的涂层，其中所述涂层包括至少两层，包括结合到所述金刚石体的至少一侧的第一层和设置在所述第一层上的第二层，所述第二层为光学折射金属化合物涂层，其是半透明的并且通过干扰来自第二层的前表面和后表面的反射光形成一种或多种颜色。

2. 发明申请

WO2014026930A1 THICK POLYCRYSTALLINE SYNTHETIC DIAMOND WAFERS FOR HEAT SPREADING APPLICATIONS AND MICROWAVE PLASMA CHEMICAL VAPOUR DEPOSITION SYNTHESIS TECHNIQUES 审中-公开
标题翻译：用于热膨胀应用和微波等离子体化学蒸气沉积合成技术的厚晶体合成金刚石陶瓷
公开(公告)号：WO2014026930A1
公开(公告)日：2014-02-20
申请号：PCT/EP2013/066753
申请日：2013-08-09
申请人： ELEMENT SIX LIMITED
发明人： WILLIAMS, Gruffudd, Trefor , DODSON, Joseph, Michael , INGLIS, Paul, Nicolas , KELLY, Christopher, John
IPC分类号： C30B25/10 , C30B29/04 , C23C16/27 , C01B31/06
CPC分类号： H01S5/02484 , C01B32/25 , C23C16/274 , C23C16/511 , C23C16/52 , C30B25/105 , C30B25/16 , C30B25/18 , C30B29/04 , Y10T428/21 , Y10T428/24471
摘要： A method of fabricating a polycrystalline CVD synthetic diamond material having an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm -1 K -1 , the method comprising: loading a refractory metal substrate into a CVD reactor; locating a refractory metal guard ring around a peripheral region of the refractory metal substrate, the refractory metal guard ring defining a gap between an edge of the refractory metal substrate and the refractory metal guard ring having a width 1.5 mm to 5.0 mm; introducing microwaves into the CVD reactor at a power such that the power density in terms of power per unit area of the refractory metal substrate is in a range 2.5 to 4.5 W mm -2 ; introducing process gas into the CVD reactor wherein the process gas within the CVD reactor comprises a nitrogen concentration in a range 600 ppb to 1500 ppb calculated as molecular nitrogen N 2 , a carbon containing gas concentration in a range.5% to 3.0% by volume,and a hydrogen concentration in a range 92% to 98.5% by volume; controlling an average temperature of the refractory metal substrate to lie in a range 750 o C to 950 o C and to maintain a temperature difference between an edge and a centre point on the refractory metal substrate of no more than 80 o C growing polycrystalline CVD synthetic diamond material to a thickness of at least 1.3 mm on the refractory metal substrate; and cooling the polycrystalline CVD synthetic diamond material to yield a polycrystalline CVD synthetic diamond material having a thickness of at least 1.3 mm, an average thermal conductivity at room temperature through the thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm -1 K -1 over at least a central area of the polycrystalline CVD synthetic diamond material, wherein the central area is at least 70% of a total area of the polycrystalline CVD synthetic diamond material, a single substitutional nitrogen concentration no more than 0.80 ppm over at least the central area of the polycrystalline CVD synthetic diamond material,and wherein the polycrystalline CVD synthetic diamond material is substantially crack free over at least the central area thereof such that the central area has no cracks which intersect both external major faces of the polycrystalline CVD synthetic diamond material and extend greater than 2 mm in length.
摘要翻译：一种通过至少2000Wm-1K-1的多晶CVD合成金刚石材料的厚度在室温下制造具有平均热导率的多晶CVD合成金刚石材料的方法，所述方法包括：将难熔金属基底加载到CVD 反应堆; 将耐火金属保护环定位在难熔金属基底的周边区域周围，难熔金属保护环在难熔金属基底的边缘和宽度为1.5mm至5.0mm的耐火金属保护环之间形成间隙; 以这样的功率将微波引入CVD反应器中，使得以耐火金属基材的每单位面积的功率计算的功率密度在2.5至4.5Wmm -2的范围内; 将工艺气体引入CVD反应器中，其中CVD反应器内的工艺气体包含以分子氮N2计算的范围为600ppb至1500ppb的氮浓度，含碳气体浓度为5体积％至3.0体积％和氢浓度在92％至98.5％的范围内; 将耐火金属基材的平均温度控制在750℃至950℃的范围内，并且将难熔金属基材上不超过80℃生长的多晶CVD合成金刚石材料的边缘和中心点之间的温度差保持为厚度在难熔金属基材上至少为1.3mm; 并冷却所述多晶CVD合成金刚石材料以产生厚度至少为1.3mm的多晶CVD合成金刚石材料，通过所述多晶CVD合成金刚石材料的厚度至少为2000Wm-1K-1的室温下的平均热导率，至少在多晶CVD合成金刚石材料的中心区域上，其中中心区域是多晶CVD合成金刚石材料的总面积的至少70％，单个取代氮浓度至少不超过0.80ppm 所述多晶CVD合成金刚石材料的中心区域，并且其中所述多晶CVD合成金刚石材料至少在其中心区域上基本上无裂纹，使得所述中心区域没有与所述多晶CVD合成金刚石材料的两个外表面相交的裂纹并且长度大于2mm。

3. 发明申请

WO2013178535A2 FREE-STANDING NON-PLANAR POLYCRYSTALLINE SYNTHETIC DIAMOND COMPONENTS 审中-公开
标题翻译：自由标准非平面多晶合成金刚石组件
公开(公告)号：WO2013178535A2
公开(公告)日：2013-12-05
申请号：PCT/EP2013/060666
申请日：2013-05-23
申请人： ELEMENT SIX LIMITED
发明人： LIGGINS, Stephanie , BRANDON, John, Robert , PERKINS, Neil , WORT, Christopher, John, Howard , INGLIS, Paul, Nicolas , MCCLYMONT, Mark, Robin
IPC分类号： H04R7/12 , H04R31/00
CPC分类号： A44C17/007 , C23C16/01 , C23C16/27 , C23C16/274 , C23C16/458 , H04R7/127 , H04R31/003 , H04R2307/023 , Y10T428/21 , Y10T428/24355
摘要： A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness R a no more than 50 nm, wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected onto a plane of no less than 5 mm and is substantially crack free over at least a central region thereof, wherein the central region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component, wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline CVD synthetic diamond component and extend greater than 2 mm in length.
摘要翻译：一种独立的非平面多晶CVD合成金刚石组分，其包含成核面和生长面，所述成核面包含比生长面更小的晶粒，成核面的表面粗糙度Ra不大于50nm，其中，当非投影到不小于5mm的平面上并且在至少其中心区域上基本上无裂纹时，其非常平坦的多晶CVD合成金刚石组件具有最长的线性尺寸，其中中心区域至少为70％独立非平面多晶CVD合成金刚石组分的总面积，其中中心区域没有与独立的非平面多晶CVD合成金刚石组分的两个主要表面相交并且长度大于2mm的裂纹。

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