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1. 发明申请

WO2005013335A3 METHOD OF DEPOSITING PATTERNED FILMS OF MATERIALS USING A POSITIVE IMAGING PROCESS 审中-公开
标题翻译：使用积极成像过程沉积材料的图案的方法
公开(公告)号：WO2005013335A3
公开(公告)日：2005-08-04
申请号：PCT/US2004025075
申请日：2004-07-30
申请人： EKC TECHNOLOGY INC , HILL ROSS H , BLAIR SHARON LOUISE , LI GRACE , ZHANG XIN , RUAN HAIXIONG
发明人： HILL ROSS H , BLAIR SHARON LOUISE , LI GRACE , ZHANG XIN , RUAN HAIXIONG
IPC分类号： G03F7/00 , H01L20060101 , H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/768
CPC分类号： G03F7/0042 , H01L21/0332 , H01L21/0337 , H01L21/288 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/316 , H01L21/31691 , H05K3/106 , H05K2203/121
摘要： The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(Pr O)2(EAA)2.
摘要翻译：本发明通常包括在衬底上形成图案的方法。该方法包括将包含至少一种金属的前体施加到基底以形成前体层，暴露前体层的预定部分并显影前体层的预定部分。显影步骤从衬底去除或至少基本上除去预定部分，从而在包含前体的剩余部分的衬底上形成图案。在一个实施方案中，前体层包含Ti（PrO）2（EAA）2。

2. 发明申请

WO2004077530A2 TITANIUM CARBOXYLATE FILMS FOR USE IN SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的碳酸钛薄膜
公开(公告)号：WO2004077530A2
公开(公告)日：2004-09-10
申请号：PCT/US2004006238
申请日：2004-02-25
申请人： EKC TECHNOLOGY INC , HILL ROSS H , ROMAN PAUL J JR , SUH SEIGI , ZHANG XIN
发明人： HILL ROSS H , ROMAN PAUL J JR , SUH SEIGI , ZHANG XIN
IPC分类号： B05D3/00 , B05D5/12 , G03F7/004 , H01L20060101 , H01L21/00 , H01L21/027 , H01L21/033 , H01L21/06 , H01L21/288 , H01L21/308 , H01L21/31 , H01L21/311 , H01L21/469 , H01L21/768 , H01L29/51 , H01L35/24 , H01L
CPC分类号： G03F7/0042 , H01L21/0271 , H01L21/0331 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/288 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76807 , H01L21/76811 , H01L21/76813 , H01L21/76838 , H01L29/517
摘要： The present invention involves the formation of titanium carbonate films that exhibit improved hydrolytic stability and photosensitivity. Such films can be used in semiconductor processing to deposit titanium and titanium oxide layers on a substrate and to form patterns without the use of photoresists. Preferred titanium carboxylates are non-branched and branched carboxylates wherein the alkoxide component is an alcohol, branched titanium carboxylates wherein the alkoxide component is a diol, non-branched and branched titanium alpha hydroxy carboxylate compounds, and titanium dicarboxylate compounds.
摘要翻译：本发明涉及形成具有改善的水解稳定性和光敏性的碳酸钛膜。这样的膜可用于半导体处理以在基板上沉积钛和氧化钛层并形成不使用光致抗蚀剂的图案。优选的羧酸钛是非支链和支链羧酸盐，其中醇盐组分是醇，其中醇盐组分是二醇，非支链和支链钛α羟基羧酸盐化合物的支化钛羧酸盐和二羧酸钛化合物。

3. 发明申请

WO03031682A3 PHOTOLYTIC CONVERSION PROCESS TO FORM PATTERNED AMORPHOUS FILM 审中-公开
标题翻译：光刻转换法形成图案非晶膜
公开(公告)号：WO03031682A3
公开(公告)日：2003-08-28
申请号：PCT/US0231683
申请日：2002-10-04
申请人： EKC TECHNOLOGY INC
发明人： BRAVO-VASQUEZ JUAN-PABLO , HILL ROSS H
IPC分类号： C23C20/06 , C23C18/06 , C23C18/12 , C23C18/14
CPC分类号： C23C18/14 , C23C18/06 , C23C18/08 , C23C18/1216 , C23C18/1279 , C23C18/1283
摘要： The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper or silica, or their oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have a metal and a photo-degradable ligand. A preferred ligand is acac or alkyl-acac, especially in combination with acetate ligands. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step. Low temperature baking may be used to remove residual organics from the deposited film. If silica is the metal, the deposited film has excellent smoothness and dielectric properties.
摘要翻译：本发明涉及一种用于从金属络合物沉积由金属如铜或二氧化硅或其氧化物构成的薄膜的无光致抗蚀剂方法。更具体地，该方法包括将金属络合物的非晶膜施加到基底上。金属络合物具有金属和光可降解配体。优选的配体是acac或烷基 - acac，特别是与乙酸盐配体组合。这些膜，例如热，光化学或电子束照射可以转化为金属或其氧化物。通过使用定向光或电子束，这可以在一个步骤中导致图案化的金属或金属氧化物膜。可以使用低温烘烤从沉积膜中除去残留的有机物。如果二氧化硅是金属，则沉积膜具有优异的平滑性和介电性能。

4. 发明申请

WO0183844A2 METHOD FOR DEPOSITING METAL AND METAL OXIDE FILMS AND PATTERNED FILMS 审中-公开
标题翻译：用于沉积金属和金属氧化物膜和图案膜的方法
公开(公告)号：WO0183844A2
公开(公告)日：2001-11-08
申请号：PCT/US0113659
申请日：2001-04-27
申请人： EKC TECHNOLOGY INC
发明人： HILL ROSS H , SHI YOU MAO
IPC分类号： C22B7/00 , C09K13/00 , C11D7/32 , C11D7/34 , C23C18/14 , G03F7/42 , H01L21/02 , H01L21/28 , H01L21/306 , H01L21/311 , H01L21/3213 , H01L21/768 , H05K3/10 , C23C16/00
CPC分类号： C23C18/06 , C11D7/3218 , C11D7/3281 , C11D7/34 , C23C18/08 , C23C18/1216 , C23C18/1245 , C23C18/1295 , C23C18/14 , G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/02071 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76838 , H01L21/76894 , H05K3/105 , Y10S148/903 , Y10T428/12493 , Y10T428/12903
摘要： The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper, or its oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have the formula MfLgXh, wherein M is selected from the group consisting of Ti, V, Cr, Au, Mn, Fe, Co, Ni, Cu, Zn, Si, Sn, Li, Na, K, Ba, Sr, Mo, Ru, Pd, Pt, Re, Ir, and Os, L is a ligand of the formula (R2NCR2'CO) wherein R and R' are independently selected from H, CnHm and CnHmAxBy wherein A and B are independently selected from main group elements and f, g, h, n, m, x and y represent integers and wherein X is an anion independently selected from N3, NCO, NO3, NO2, Cl, Br, I, CN, OH, H and CH3. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides. By using either directed light or electron beams, this may lead to a patterned metal or metal oxide film in a single step.
摘要翻译：本发明涉及一种用于从金属络合物沉积由金属如铜或其氧化物构成的薄膜的无光致抗蚀剂方法。更具体地，该方法包括将金属络合物的非晶膜施加到基底上。金属络合物具有式MfLgXh，其中M选自Ti，V，Cr，Au，Mn，Fe，Co，Ni，Cu，Zn，Si，Sn，Li，Na，K，Ba，Sr ，Mo，Ru，Pd，Pt，Re，Ir和Os，L是式（R2NCR2'CO）的配体，其中R和R'独立地选自H，CnHm和CnHmAxBy，其中A和B独立地选自主要元素和f，g，h，n，m，x和y表示整数，其中X是独立地选自N 3，NCO，NO 3，NO 2，Cl，Br，I，CN，OH，H和CH 3的阴离子。这些膜，例如，热，光化学或电子束照射可以转化为金属或其氧化物。通过使用定向光或电子束，这可以在一个步骤中导致图案化的金属或金属氧化物膜。

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