会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • TG-APROTININ FUSION PROTEINS AND MATRICES THEREOF
    • TG-APROTININ融合蛋白及其基因
    • WO2011025957A3
    • 2011-07-07
    • PCT/US2010046991
    • 2010-08-27
    • ECOLE POLYTECHHUBBELL JEFFREY AFREY PETERLORENTZ KRISTEN
    • HUBBELL JEFFREY AFREY PETERLORENTZ KRISTEN
    • A61L24/10
    • A61L24/106A61L24/108A61L31/046A61L31/047
    • Fusion proteins containing a first domain and a second domain, where the first domain contains a crosslinkable substrate domain and the second domain contains a fibrinolysis inhibitor, are provided. In a preferred embodiment, the fibrinolysis inhibitor is a protease inhibitor, preferably, aprotinin. The fusion protein optionally contains a degradable site between the fist domain and the second domain. In a preferred embodiment, the crosslinkable substrate domain is a transglutaminase substrate domain, more preferably a Factor XIIIa substrate domain. Also provided is a method for decreasing the degradation of a fibrin matrix, and supplemented fibrin matrices with reduced degradation rates. The method includes covalently crossHnking a fusion protein containing a fibrinolysis inhibitor to the matrix. The supplemented fibrin matrices contain lower concentrations of a fibrinolysis inhibitor covalently bound to the matrix, compared to the concentration of unbound fibrinolysis inhibitor required to achieve the same reduction in degradation of the fibrin matrix.
    • 提供了含有第一结构域和第二结构域的融合蛋白,其中第一结构域含有可交联的底物结构域,第二结构域含有纤维蛋白溶解抑制剂。 在优选的实施方案中,纤维蛋白溶解抑制剂是蛋白酶抑制剂,优选抑肽酶。 融合蛋白任选地包含第一结构域和第二结构域之间的可降解位点。 在优选的实施方案中,可交联底物结构域是转谷氨酰胺酶底物结构域,更优选因子XIIIa底物结构域。 还提供了降低纤维蛋白基质降解的方法,以及降低降解速率的补充的纤维蛋白基质。 该方法包括将含有纤维蛋白溶解抑制剂的融合蛋白共价交叉到基质上。 与实现纤维蛋白基质降解相同的降低所需的未结合的纤维蛋白溶解抑制剂的浓度相比,补充的纤维蛋白基质含有较低浓度的与基质共价结合的纤维蛋白溶解抑制剂。
    • 2. 发明申请
    • EPITAXIAL INSTALLATION
    • 外来安装
    • WO8807096A3
    • 1988-10-06
    • PCT/EP8800188
    • 1988-03-10
    • SITESA SADAN JEAN PIERREBONI EROS DEFREY PETERIFANGER JOHANN
    • DAN JEAN-PIERREDE BONI EROSFREY PETERIFANGER JOHANN
    • C30B25/02C30B25/12C30B25/14C30B25/16C30B35/00H01L21/205
    • C30B25/02C30B25/12C30B25/14C30B35/00
    • Epitaxial installation with at least one reaction chamber (10) of a dielectrical material, provided with a gas inlet in the cover area and a gas outlet in the floor area, a gas mixer (100) connected to the gas inlet of the reaction chamber (10), for the introduction of reaction and circulation gases, a rotatable graphite support (50), disposed in the reaction chamber between the gas inlet and gas outlet, tapering towards the gas inlet and in the form of a polyhedron, for supporting several wafers (70), an induction heater (510, 512), essentially surrounding the reaction chamber (10), for the indirect heating of the wafer support (50), a device for transporting the wafer support (50) from a charging zone (150) outside the reaction chamber (10) into a work position within the reaction chamber, a device (300) for dispatching the wafer support (50) with wafers (70) into the charging zone (15), and a pure air space (1) for the reception of said components of the installation. Also a pipe for carrying circulation and reaction gases from the gas mixer (100) through the reaction chamber (10) when the wafer supports (50) are in the work position, and for carrying pure air gases and inert gases to the pure air space (1) between the charging zone (150) and the work position within the reaction chamber (10), when the wafer supports are in the charging zone, ensuring that particles carried with the gases and created during the epitaxial process are kept away from the surface of the wafer support (50).