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1. 发明申请

WO9957342A8 METHOD AND DEVICE FOR PLATING SUBSTRATE 审中-公开
标题翻译：用于镀敷基板的方法和装置
公开(公告)号：WO9957342A8
公开(公告)日：2000-01-06
申请号：PCT/JP9902271
申请日：1999-04-28
申请人： EBARA CORP , HONGO AKIHISA , NAGAI MIZUKI , OHNO KANJI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
发明人： HONGO AKIHISA , NAGAI MIZUKI , OHNO KANJI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
IPC分类号： C25D3/38 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/42 , C25D5/34 , C25D7/10 , H05K1/18 , H05K3/18 , H05K3/24
CPC分类号： H01L21/76843 , C25D3/38 , C25D5/10 , C25D7/12 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要： A method and a device for plating a substrate capable of filling a material with a small electrical resistance such as copper or copper alloy into fine recesses such as fine wiring grooves solidly, uniformly and with flat surfaces; specifically, a method for plating a substrate which electroplates a substrate (W) having fine grooves (10) therein and fills metal (13) into the fine grooves (10), wherein a first step plating (11) is carried out with the substrate (W) immersed in a first plating liquid having a composition very uniform in eletrodepositing performance and then a second step plating (12) is carried out while immersed in a second plating liquid having a composition excellent in levelling performance.
摘要翻译：一种用于将能够将诸如铜或铜合金等小电阻的材料填充到具有平坦表面的精细布线槽的精细凹槽中的基板的电镀方法和装置; 具体地说，涉及对具有细槽（10）的基板（W）进行电镀的基板的电镀方法，其中，在该细槽（10）中填充金属（13），其中，第一台阶（11）与基板（W）浸渍在具有非常均匀的电沉积性能的第一电镀液中，然后浸入第二电镀液中，同时浸入具有良好流平性能的组合物的第二电镀液中。

2. 发明申请

WO0010200A8 WAFER PLATING METHOD AND APPARATUS 审中-公开
标题翻译：抛光方法和装置
公开(公告)号：WO0010200A8
公开(公告)日：2000-04-27
申请号：PCT/JP9904349
申请日：1999-08-11
申请人： EBARA CORP , HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
发明人： HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
IPC分类号： C23C18/16 , C23C18/38 , C25D3/38 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/10 , H05K3/24 , H05K3/42 , H01L21/3205
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method for plating through a simple manufacturing process a semiconductor wafer (W) so as to efficiently fill a fine recess (42) for interconnection made in the wafer (W) with a plating metal (43) having little voids and immune to contamination and to create an interconnection, comprising an electroless plating step of forming an initial film (41) on the wafer (W) and an electroplating step of filling the recess by electroplating using the initial film as the electricity feeding layer. An apparatus for plating a semiconductor wafer by such a method is also disclosed.
摘要翻译：一种通过简单的制造工艺对半导体晶片（W）进行电镀的方法，以便有效地填充用晶片（W）制成的互连用的微细凹槽（42），其中电镀金属（43）具有很小的空隙并且不受污染，并且以形成互连，包括在晶片（W）上形成初始膜（41）的无电电镀步骤以及使用初始膜作为馈电层通过电镀填充凹部的电镀步骤。还公开了一种通过这种方法电镀半导体晶片的装置。

3. 发明申请

WO03009343A3 PLATING APPARATUS 审中-公开
标题翻译：电镀设备
公开(公告)号：WO03009343A3
公开(公告)日：2003-05-30
申请号：PCT/JP0207247
申请日：2002-07-17
申请人： EBARA CORP , HONGO AKIHISA
发明人： HONGO AKIHISA
IPC分类号： C25D7/12 , C25D17/00 , H01L21/00 , H01L21/288 , H01L21/687
CPC分类号： H01L21/67161 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67017 , H01L21/6715 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/6723 , H01L21/68728
摘要： A plating apparatus for plating a substrate comprises a processing section (12) defined in a clean room, processing units (5, 6) disposed within the processing section (12) for processing the substrate, a plating section (14) defined in the processing section (12), and a plating unit (4) disposed within the plating section (14) for plating the substrate (W). Air can be supplied to and discharged from the plating section (14) independently of the processing section (12) outside of the plating section (14). The plating apparatus further comprises a partition wall (10) for isolating the plating section (14) from the processing section (12), and at least one opening defined in the partition wall (10) for transferring the substrate (W) between the plating section (14) and the processing section (12).
摘要翻译：用于电镀基板的电镀装置包括限定在洁净室中的处理部（12），设置在用于处理基板的处理部（12）内的处理单元（5,6），在处理中限定的电镀部（14）（12），以及设置在电镀部（14）内用于电镀基板（W）的电镀单元（4）。与电镀部分（14）外部的处理部分（12）无关地可以向电镀部分（14）提供空气。电镀装置还包括用于将电镀部分（14）与处理部分（12）隔离的分隔壁（10）和限定在分隔壁（10）中的至少一个开口，用于将基板（W）在电镀部分（14）和处理部分（12）。

4. 发明申请

WO0003074A8 PLATING DEVICE 审中-公开
标题翻译：电镀装置
公开(公告)号：WO0003074A8
公开(公告)日：2000-05-04
申请号：PCT/JP9903729
申请日：1999-07-09
申请人： EBARA CORP , HONGO AKIHISA , SUZUKI KENICHI , CHONO ATSUSHI , TADA MITSUO , OGATA AKIRA , SENDAI SATOSHI , MISHIMA KOJI
发明人： HONGO AKIHISA , SUZUKI KENICHI , CHONO ATSUSHI , TADA MITSUO , OGATA AKIRA , SENDAI SATOSHI , MISHIMA KOJI
IPC分类号： C25D21/12 , G01R31/02
CPC分类号： C25D21/12 , G01R31/026
摘要： A conduction condition detecting means which can detect a conduction condition (contact condition) of a plurality of feeding contacts in contact with the conduction portion of a substrate to be plated, and a plating device which can form a plating film with a uniform film thickness by uniformizing plating currents flowing through individual feeding contacts. A plating device which plates a substrate to be plated (12), wherein an electrode (13) and a substrate to be plated (12) mounted to a plating jig (11) are arranged opposite to each other in a plating tank (10), the plating jig (11) is provided with a plurality of feeding contact (15) to come into contact with the conduction portion provided on the surface of the substrate to be plated (12), and a specified voltage is applied between the feeding contacts (15) and the electrode (13) to supply a plating current through the feeding contacts (15), the plating device being provided with a conduction condition detecting means (22) for detecting a conduction condition between individual feeding contacts (15) of the plating jig (11) and the conduction portion of the substrate to be plated (12).
摘要翻译：导电条件检测装置，其能够检测与待镀基板的导电部分接触的多个馈电触点的导电状态（接触状况）;以及电镀装置，其能够通过以下步骤形成具有均匀膜厚度的电镀膜：使流过各个馈电触点的电镀电流均匀化。本发明提供一种电镀装置，该电镀装置在镀槽（10）中对置配置电镀基板（12）的电极（13）和被镀基板（12），电镀夹具（11）设置有多个馈电触点（15），以与设置在待电镀基板（12）的表面上的导电部分接触，并且在馈电触点（15）与电极（13）之间的导电状态检测装置（22），用于通过馈电触点（15）提供电镀电流，所述电镀装置设置有用于检测电镀夹具（11）和待镀基板（12）的导电部分。

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