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1. 发明申请

WO2011031707A1 METHOD FOR MANUFACTURING THIN CRYSTALLINE SOLAR CELLS PRE-ASSEMBLED ON A PANEL 审中-公开
标题翻译：在面板上预组装薄晶体太阳能电池的方法
公开(公告)号：WO2011031707A1
公开(公告)日：2011-03-17
申请号：PCT/US2010/048058
申请日：2010-09-08
申请人： CRYSTAL SOLAR, INC. , RAVI, Tirunelveli, S. , KUMAR, Ananda , RAVI, Kramadhati, V.
发明人： RAVI, Tirunelveli, S. , KUMAR, Ananda , RAVI, Kramadhati, V.
IPC分类号： H01L21/30
CPC分类号： H01L31/1804 , H01L31/0488 , H01L31/0516 , H01L31/0682 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic (PV) cell panel wherein each of a plurality of silicon donor wafers has a separation layer formed on its upper surface, e.g., porous anodically etched silicon. On each donor wafer, a PV cell is then partially completed including at least part of inter-cell interconnect, after which plural donor wafers are laminated to a backside substrate or frontside. All of the donor wafers are then separated from the partially completed PV cells in an exfoliation process, followed by simultaneous completion of the remaining PV cell structures on PV cells. Finally, a second lamination to a frontside glass or a backside panel completes the PV cell panel. The separated donor wafers may be reused in forming other PV cells. Use of epitaxial deposition to form the layers of the PV cells enables improved dopant distributions and sharper junction profiles for improved PV cell efficiency.
摘要翻译：一种制造光伏（PV）电池板的方法，其中多个硅供体晶片中的每一个具有在其上表面上形成的分离层，例如多孔阳极蚀刻的硅。在每个施主晶片上，PV单元然后部分地完成，包括至少部分单元间互连，之后将多个施主晶片层压到背面基板或前侧。然后将所有供体晶片在剥离过程中与部分完成的PV电池分离，随后在PV电池上同时完成剩余的PV电池结构。最后，向前侧玻璃或后侧面板的第二层压完成PV电池面板。分离的供体晶片可以重新用于形成其它PV电池。使用外延沉积来形成PV电池的层能够改善掺杂剂分布和更清晰的接合曲线以提高PV电池的效率。

2. 发明申请

WO2012021750A1 MWT ARCHITECTURE FOR THIN SI SOLAR CELLS 审中-公开
标题翻译：微型太阳能电池的MWT结构
公开(公告)号：WO2012021750A1
公开(公告)日：2012-02-16
申请号：PCT/US2011/047486
申请日：2011-08-11
申请人： CRYSTAL SOLAR, INC. , ASTHANA, Ashish , RAVI, Tirunelveli, S. , RAVI, Kramadhati, V. , NAG, Somnath
发明人： ASTHANA, Ashish , RAVI, Tirunelveli, S. , RAVI, Kramadhati, V. , NAG, Somnath
IPC分类号： H01L31/00
CPC分类号： H01L31/02245 , H01L31/02168 , H01L31/03921 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell. The solar cells may comprise epitaxially deposited silicon and may include an epitaxially deposited back surface field.
摘要翻译：描述了通过太阳能电池制造金属封套的方法和用于薄硅太阳能电池的模块，包括外延硅太阳能电池。这些金属包裹太阳能电池具有用于基极和发射极触点的平面后接触几何形状。通过太阳能电池的金属卷绕的制造可以包括：通过密封剂将设备的发射极侧附接到太阳能玻璃的光伏器件提供，该器件包括在器件发射器上的汇流条; 通过设备基座和发射器形成通孔，终端在母线中的通孔; 在所述通孔的表面和所述基底的后表面上沉积保形电介质膜; 从所述通孔的端部去除所述共形绝缘膜的部分，以暴露所述母线和所述基座的场区域; 并且形成与母线和太阳能电池背面上的场区分开的电接触。太阳能电池可以包括外延沉积的硅并且可以包括外延沉积的背表面场。

3. 发明申请

WO2013020111A1 PHOTOVOLTAIC MODULE FABRICATION WITH THIN SINGLE CRYSTAL EPITAXIAL SILICON DEVICES 审中-公开
标题翻译：具有薄单晶外延硅设备的光电模块制造
公开(公告)号：WO2013020111A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/049648
申请日：2012-08-03
申请人： CRYSTAL SOLAR, INC. , RAVI, Kramadhati, V. , RAVI, Tirunelveli, S. , ASTHANA, Ashish , NAG, Somnath
发明人： RAVI, Kramadhati, V. , RAVI, Tirunelveli, S. , ASTHANA, Ashish , NAG, Somnath
IPC分类号： H01L31/042
CPC分类号： H01L31/0504 , H01L31/02363 , H01L31/048 , H01L31/068 , H01L31/1896 , Y02E10/547
摘要： Photovoltaic modules including a plurality of solar cells bonded to a module back sheet are described herein, wherein each solar cell includes a superstrate bonded to a front side of a photovoltaic device to facilitate handling of very thin photovoltaic devices during fabrication of the module. Modules may also include module front sheets and the solar cells may include bottom sheets. The modules may be made of flexible materials, and may be foldable. Fabrication processes include tabbing photovoltaic devices prior to attaching the individual superstrates.
摘要翻译：这里描述了包括结合到模块背板的多个太阳能电池的光伏模块，其中每个太阳能电池包括结合到光伏器件的前侧的顶板，以便于在模块制造期间处理非常薄的光伏器件。模块还可以包括模块前片，并且太阳能电池可以包括底片。模块可以由柔性材料制成，并且可以是可折叠的。制造工艺包括在连接各个覆盖物之前贴上光伏器件。

4. 发明申请

WO2011133975A2 THIN FILM SOLAR CELL WITH CERAMIC HANDLING LAYER 审中-公开
标题翻译：薄膜太阳能电池与陶瓷处理层
公开(公告)号：WO2011133975A2
公开(公告)日：2011-10-27
申请号：PCT/US2011/033792
申请日：2011-04-25
申请人： CRYSTAL SOLAR, INC. , KUMAR, Ananda, H. , RAVI, Tirunelveli, S. , GOPAL, Vidyut
发明人： KUMAR, Ananda, H. , RAVI, Tirunelveli, S. , GOPAL, Vidyut
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/02167 , C03C3/091 , C03C3/097 , C03C8/08 , C03C8/14 , H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/028 , H01L31/048 , H01L31/0682 , H01L31/072 , H01L31/0725 , H01L31/0747 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. A glass/ceramic handling layer is then formed on the PV cell structures. The PV cell structures with handling layers are then exfoliated from the mother wafer. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels. The glass/ceramic handling layers provide structural integrity to the thin epitaxial solar cells during the separation process and subsequent handling.
摘要翻译：公开了一种用于制造光伏（PV）电池板的方法，其中所有PV电池同时形成在固定于基座的单晶硅母晶片的二维阵列上。多晶硅分离层在母晶片的表面被阳极氧化。然后平滑多孔膜以形成用于外延膜生长的合适表面。外延反应器用于生长形成PV电池结构的n型和p型薄膜。然后在PV电池结构上形成玻璃/陶瓷处理层。然后将具有处理层的PV电池结构从母晶片剥离。母晶片阵列可以多次重复使用，从而降低完成的太阳能电池板的材料成本。在分离过程和后续处理过程中，玻璃/陶瓷处理层为薄外延太阳能电池提供结构完整性。

5. 发明申请

WO2009114108A2 INTEGRATED METHOD AND SYSTEM FOR MANUFACTURING MONOLITHIC PANELS OF CRYSTALLINE SOLAR CELLS 审中-公开
标题翻译：用于制造晶体太阳能电池单层面的集成方法和系统
公开(公告)号：WO2009114108A2
公开(公告)日：2009-09-17
申请号：PCT/US2009/001457
申请日：2009-03-06
申请人： CRYSTAL SOLAR, INC. , RAVI, Tirunelveli, S. , KUMAR, Ananda, H. , ASTHANA, Ashish
发明人： RAVI, Tirunelveli, S. , KUMAR, Ananda, H. , ASTHANA, Ashish
IPC分类号： H01L31/042 , H01L21/68
CPC分类号： H01L31/1876 , H01L21/68728 , H01L31/048 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers (3002) affixed to a susceptor (3025). Porous silicon separation layers (3010) are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures (3016). Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer (3012) to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels.
摘要翻译：一种制造光伏（PV）电池板的方法，其中所有PV电池同时形成在固定在基座（3025）上的单晶硅母晶片（3002）的二维阵列上。在母晶片的表面中阳极氧化多孔硅分离层（3010）。然后使多孔膜平滑以形成用于外延膜生长的合适表面。使用外延反应器来生长形成PV电池结构的n型和p型膜（3016）。与n层和p层的接触被沉积，然后将玻璃层（3012）粘合到PV电池阵列上。然后通过剥离运动将多孔硅膜分离穿过所有附着在上面的细胞，然后在PV电池阵列上附加强化层。母晶片的阵列可以重复使用多次，从而减少完成的太阳能电池板的材料成本。

6. 发明申请

WO2012129184A1 INSITU EPITAXIAL DEPOSITION OF FRONT AND BACK JUNCTIONS IN SINGLE CRYSTAL SILICON SOLAR CELLS 审中-公开
标题翻译：单晶硅太阳能电池中正面和反面结的外延沉积
公开(公告)号：WO2012129184A1
公开(公告)日：2012-09-27
申请号：PCT/US2012/029708
申请日：2012-03-19
申请人： CRYSTAL SOLAR, INC. , RAVI, Tirunelveli, S. , ASTHANA, Ashish
发明人： RAVI, Tirunelveli, S. , ASTHANA, Ashish
IPC分类号： H01L31/00
CPC分类号： H01L31/022433 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02579 , H01L21/02664 , H01L31/022441 , H01L31/02366 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process.
摘要翻译：具有外延沉积非常高掺杂的p型硅背表面场的单晶硅太阳能电池的制造消除了对传统的铝丝网印刷步骤的需要，因此由于在电池中没有铝诱导的弓形，因此能够实现更薄的硅太阳能电池。此外，具有内插外延p-n结形成和非常高掺杂的n型硅前表面场的单晶硅太阳能电池的制造完全避免了常规掺杂剂扩散步骤和一个丝网印刷步骤，从而实现了更便宜的制造工艺。

7. 发明申请

WO2012166748A1 SILICON WAFERS BY EPITAXIAL DEPOSITION 审中-公开
标题翻译：硅晶体通过外延沉积
公开(公告)号：WO2012166748A1
公开(公告)日：2012-12-06
申请号：PCT/US2012/039900
申请日：2012-05-29
申请人： CRYSTAL SOLAR, INC. , SIVARAMAKRISHNAN, Visweswaren , RAVI, Tirunelveli, S. , KASZUBA, Andrzej , TRUONG, Quoc, Vinh , VATUS, Jean, R.
发明人： SIVARAMAKRISHNAN, Visweswaren , RAVI, Tirunelveli, S. , KASZUBA, Andrzej , TRUONG, Quoc, Vinh , VATUS, Jean, R.
IPC分类号： H03K19/195
CPC分类号： C30B25/14 , C30B25/105 , C30B25/12 , C30B25/165 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L31/1804
摘要： A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross- flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates - the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.
摘要翻译：通过在具有交叉流沉积的硅前体耗尽模式中外延沉积来沉积薄单晶硅晶片的系统可以包括：具有低总热容量，高发射率和小体积的基板载体; 具有快速升温，高效热量生产和加热空间控制的灯模块; 以及设计用于横流处理的歧管。此外，衬底载体可以包括热反射器，以控制从载体和/或热扼流器的边缘的热损失，以将载体与歧管热隔离，允许对歧管进行独立的温度控制。载体和基底可以被配置用于沉积在基底的两侧 - 衬底在两侧具有释放层，并且载体构造成在衬底的两个表面上具有相等的工艺气流。高体积可以由包括多个微型间歇反应器的沉积系统来解决。

8. 发明申请

WO2010099344A1 HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR 审中-公开
标题翻译：高通量多波长外延反应器
公开(公告)号：WO2010099344A1
公开(公告)日：2010-09-02
申请号：PCT/US2010/025449
申请日：2010-02-25
申请人： CRYSTAL SOLAR, INC. , SIVARAMAKRISHNAN, Visweswaren , SANGAM, Kedarnath , RAVI, Tirunelveli, S. , KASZUBA, Andrzej , TRUONG, Quoc, Vinh
发明人： SIVARAMAKRISHNAN, Visweswaren , SANGAM, Kedarnath , RAVI, Tirunelveli, S. , KASZUBA, Andrzej , TRUONG, Quoc, Vinh
IPC分类号： C23C16/00
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/455 , C23C16/4582 , C23C16/46 , C23C16/463 , C23C16/54 , C30B25/105 , C30B25/12 , C30B29/06
摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
摘要翻译：公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。吹扫气体在反应器室内的晶片套筒外部流动，以最小化腔室壁上的沉积。此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。为了提高均匀性，工艺气体流动的方向可以在横流构型中变化。将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

9. 发明申请

WO2015192105A1 CVD EPITAXIAL REACTOR CHAMBER WITH RESISTIVE HEATING, THREE CHANNEL SUBSTRATE CARRIER AND GAS PREHEAT STRUCTURE 审中-公开
标题翻译：具有电阻加热的CVD外延反应器室，三通道基板载体和气体预加热结构
公开(公告)号：WO2015192105A1
公开(公告)日：2015-12-17
申请号：PCT/US2015/035698
申请日：2015-06-12
申请人： CRYSTAL SOLAR, INC.
发明人： SIVARAMAKRISHNAN, Visweswaren , TRUONG, Quoc, Vinh , KLEINER, Timothy, N. , RAVI, Tirunelveli, S.
IPC分类号： C23C16/00 , C23C16/46 , C23C16/52
CPC分类号： C23C16/46 , C23C16/45512 , C23C16/4582
摘要： A CVD reactor for depositing material on substrates may comprise: a vacuum chamber; at least two substrate carriers arranged in parallel in a row within the vacuum chamber, each of the at least two substrate carriers comprising mounting positions for a plurality of substrates, the mounting positions being on the walls of channels configured for flowing process gases, the channels being in parallel planes within all of the at least two substrate carriers; a planar electrically resistive heater between every two adjacent substrate carriers in the row; and planar heaters at both ends of the row. Furthermore, CVD reactor chambers with three channel substrate carriers and/or gas preheat structure are described herein.
摘要翻译：用于在衬底上沉积材料的CVD反应器可以包括：真空室; 所述至少两个衬底载体在所述真空室内并排布置成一排，所述至少两个衬底载体中的每一个包括用于多个衬底的安装位置，所述安装位置位于被构造用于流动工艺气体的通道的壁上，所述通道在所有至少两个衬底载体的所有平行平面内; 在行中每两个相邻衬底载体之间的平面电阻加热器; 和行的两端的平面加热器。此外，本文描述了具有三通道衬底载体和/或气体预热结构的CVD反应器室。

10. 发明申请

WO2017007972A1 HIGH EFFICIENCY SINGLE CRYSTAL SILICON SOLAR CELL WITH EPITAXIALLY DEPOSITED SILICON LAYERS WITH DEEP JUNCTION(S) 审中-公开
标题翻译：高效单晶硅太阳能电池，具有外延沉积的具有深度接合的硅层（S）
公开(公告)号：WO2017007972A1
公开(公告)日：2017-01-12
申请号：PCT/US2016/041404
申请日：2016-07-07
申请人： CRYSTAL SOLAR, INC.
发明人： HAO, Ruiying , RAVI, Tirunelveli, S.
IPC分类号： H01L31/068 , C30B25/02 , C30B29/06 , C30B29/68
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/0682 , H01L31/1892 , Y02E10/547
摘要： Embodiments of the present invention may include single crystal silicon solar cell structures with epitaxially deposited silicon device layers with deep junction(s). In some embodiments, the single crystal silicon solar cell structures may comprise a moderately doped, thick (greater than 10 microns), epitaxially deposited silicon emitter layer. In some embodiments, the single crystal silicon solar cell structures may comprise moderately doped, thick (greater than 10 microns), epitaxially deposited FSF layers. The moderate doping reduces electron-hole recombination within the FSF and emitter layers and causes smaller bandgap narrowing and reduced Auger recombination compared to prior art devices which typically have more heavily doped layers, and the thicker FSF and emitter layers than typically used in prior art devices assist in having a desirable sheet resistance for the solar cell front and back surface, as measured prior to front side and back side metallization.
摘要翻译：本发明的实施例可以包括具有具有深结的外延沉积硅器件层的单晶硅太阳能电池结构。在一些实施例中，单晶硅太阳能电池结构可以包括适度掺杂的（大于10微米）的外延沉积的硅发射极层。在一些实施例中，单晶硅太阳能电池结构可以包括中等掺杂，厚（大于10微米）的外延沉积的FSF层。与现有技术中通常具有更高掺杂层的器件相比，中等掺杂减少了FSF和发射极层内的电子 - 空穴复合，并导致较小的带隙变窄和减小的俄歇复合，以及比现有技术器件中通常使用的较厚的FSF和发射极层有助于在前侧和后侧金属化之前测量的太阳能电池正面和背面具有理想的薄层电阻。

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