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    • 1. 发明申请
    • MWT ARCHITECTURE FOR THIN SI SOLAR CELLS
    • 微型太阳能电池的MWT结构
    • WO2012021750A1
    • 2012-02-16
    • PCT/US2011/047486
    • 2011-08-11
    • CRYSTAL SOLAR, INC.ASTHANA, AshishRAVI, Tirunelveli, S.RAVI, Kramadhati, V.NAG, Somnath
    • ASTHANA, AshishRAVI, Tirunelveli, S.RAVI, Kramadhati, V.NAG, Somnath
    • H01L31/00
    • H01L31/02245H01L31/02168H01L31/03921H01L31/068H01L31/1804H01L31/1892Y02E10/547Y02P70/521
    • Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell. The solar cells may comprise epitaxially deposited silicon and may include an epitaxially deposited back surface field.
    • 描述了通过太阳能电池制造金属封套的方法和用于薄硅太阳能电池的模块,包括外延硅太阳能电池。 这些金属包裹太阳能电池具有用于基极和发射极触点的平面后接触几何形状。 通过太阳能电池的金属卷绕的制造可以包括:通过密封剂将设备的发射极侧附接到太阳能玻璃的光伏器件提供,该器件包括在器件发射器上的汇流条; 通过设备基座和发射器形成通孔,终端在母线中的通孔; 在所述通孔的表面和所述基底的后表面上沉积保形电介质膜; 从所述通孔的端部去除所述共形绝缘膜的部分,以暴露所述母线和所述基座的场区域; 并且形成与母线和太阳能电池背面上的场区分开的电接触。 太阳能电池可以包括外延沉积的硅并且可以包括外延沉积的背表面场。
    • 4. 发明申请
    • THIN INTERDIGITATED BACKSIDE CONTACT SOLAR CELL AND MANUFACTURING PROCESS THEREOF
    • 薄型中间背接触式太阳能电池及其制造工艺
    • WO2010062341A2
    • 2010-06-03
    • PCT/US2009/005852
    • 2009-10-27
    • CRYSTAL SOLAR, INC.RAVI, Kramadhati, V.
    • RAVI, Kramadhati, V.
    • H01L31/042
    • H01L31/0682H01L31/061H01L31/1804H01L31/1892Y02E10/547Y02P70/521
    • A design and manufacturing method for an interdigitated backside contact photovoltaic (PV) solar cell less than 100 μm thick are disclosed. A porous silicon layer (102) is formed on a wafer substrate (100). Portions of the PV cell are then formed using diffusion, epitaxy and autodoping from the substrate. All backside processing of the solar cell (junctions (201, 204-700), passivation layer (300), metal contacts (990, 991) to the N+ and P+ regions) is performed while the thin epitaxial layer is attached to the porous layer and substrate. After backside processing, the wafer is clamped and exfoliated. The front of the PV cell is completed from the region of the wafer near the exfoliation fracture layer, with subsequent removal of the porous layer, texturing, passivation (1300) and deposition of an antireflective coating (1400). During manufacturing, the cell is always supported by either the bulk wafer or a wafer chuck, with no processing of bare thin PV cells.
    • 公开了一种用于小于100μm厚的交叉指型背侧接触光伏(PV)太阳能电池的设计和制造方法。 多晶硅层(102)形成在晶片衬底(100)上。 然后使用来自衬底的扩散,外延和自动掺杂来形成PV电池的部分。 当薄外延层附着到多孔层时执行太阳能电池(结(201,204-700),钝化层(300),金属触点(990,991)到N +和P +区的所有背面处理 和底物。 背面处理后,晶片被夹住并剥落。 PV晶片的正面从剥离断裂层附近的晶片区域完成,随后除去多孔层,纹理化,钝化(1300)和沉积抗反射涂层(1400)。 在制造过程中,单元总是由体晶片或晶圆卡盘支撑,而不需要裸露的薄PV电池。