专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2016079201A1 MLU CELL FOR SENSING AN EXTERNAL MAGNETIC FIELD AND A MAGNETIC SENSOR DEVICE COMPRISING THE MLU CELL 审中-公开
标题翻译：用于感测外部磁场的MLU电池和包含MLU电池的磁传感器装置
公开(公告)号：WO2016079201A1
公开(公告)日：2016-05-26
申请号：PCT/EP2015/077004
申请日：2015-11-18
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G01R33/09
CPC分类号： G01R33/0017 , G01R33/098
摘要： The present disclosure concerns a MLU cell (1) for sensing an external magnetic field, comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) adapted to be oriented by the external magnetic field; a reference layer (23) having a reference magnetization (230);a tunnel barrier layer (22); a biasing layer (27) having a biasing magnetization (270) and a biasing antiferromagnetic layer (26) pinning the biasing magnetization (270) substantially parallel to the pinned reference magnetization (230)at a low threshold temperature (TL) and freeing it at a high threshold temperature (TH); a biasing coupling layer (28) between the sense layer (21) and the basing layer (27) and configured for magnetically coupling the biasing layer (27) and the sense layer (21) such that the sense magnetization (210) is oriented substantially perpendicular to the pinned biasing magnetization (270) and to the pinned reference magnetization (230). The present disclosure further concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of the MLU cells (1).
摘要翻译：本公开涉及用于感测外部磁场的MLU单元（1），包括：磁性隧道结（2），包括具有适于被外部磁场定向的感测磁化（210）的感测层（21）; 具有参考磁化（230）的参考层（23）;隧道势垒层（22）; 具有偏置磁化强度（270）的偏压层（27）和偏置反铁磁层（26），其在低阈值温度（TL）下基本上平行于固定基准磁化（230）固定偏置磁化（270）并将其释放在高阈值温度（TH）; 在所述感测层（21）和所述基底层（27）之间的偏置耦合层（28），并且被配置为用于磁耦合偏置层（27）和感测层（21），使得感测磁化强度（210）基本上取向垂直于被钉扎的偏置磁化（270）和固定的基准磁化（230）。本公开还涉及用于感测外部磁场的磁传感器装置（100），其包括多个MLU单元（1）。

2. 发明申请

WO2016113619A1 MAGNETIC LOGIC UNIT (MLU) CELL FOR SENSING MAGNETIC FIELDS WITH IMPROVED PROGRAMMABILITY AND LOW READING CONSUMPTION 审中-公开
标题翻译：用于感应磁场的磁性逻辑单元（MLU）具有改进的可编程性和低读数消耗
公开(公告)号：WO2016113619A1
公开(公告)日：2016-07-21
申请号：PCT/IB2015/059918
申请日：2015-12-23
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G01R33/09
CPC分类号： G01R33/098 , G01D5/16 , G01R33/0029 , G01R33/096 , G11C11/1659 , G11C11/1673
摘要： A magnetic logic unit (MLU) cell (1) for sensing magnetic fields, comprising: a magnetic tunnel junction (2) including a storage layer (23) having a storage magnetization (230, 234, 235), a sense layer (21) having a sense magnetization; a tunnel barrier layer (22) between the storage layer (23) and the sense layer (21); and a pinning layer (24) pinning the storage magnetization (230, 234, 235) at a low threshold temperature and freeing it at a high threshold temperature (TH); the sense magnetization (210) being freely alignable at the low and high threshold temperatures; the storage layer (23) inducing an exchange bias field (60) magnetically coupling the sense layer (21) such that the sense magnetization (210) tends to be aligned antiparallel or parallel to the storage magnetization (230, 234, 235); the tunnel barrier layer (22) being configured for generating an indirect exchange coupling (70) between the tunnel barrier layer (22) and the sense layer (21) providing an additional exchange bias field (71).
摘要翻译：一种用于感测磁场的磁逻辑单元（MLU）单元（1），包括：磁性隧道结（2），包括具有存储磁化（230,234,235）的存储层（23），感测层（21）具有感测磁化强度; 在所述存储层（23）和所述感测层（21）之间的隧道势垒层（22）; 和钉扎层（24），其在低阈值温度下固定存储磁化（230,234,235）并将其释放在高阈值温度（TH）; 感测磁化（210）可在低和高阈值温度下自由对准; 所述存储层（23）引起磁耦合所述感测层（21）的交换偏置场（60），使得所述感测磁化（210）倾向于反平行或平行于所述存储磁化（230,234,235）对齐; 所述隧道势垒层（22）被配置用于在所述隧道势垒层（22）和所述感测层（21）之间产生间接交换耦合（70），从而提供额外的交换偏置场（71）。

3. 发明申请

WO2015052063A1 MAGNETIC SENSOR CELL FOR MEASURING THREE-DIMENSIONAL MAGNETIC FIELDS 审中-公开
标题翻译：用于测量三维磁场的磁传感器单元
公开(公告)号：WO2015052063A1
公开(公告)日：2015-04-16
申请号：PCT/EP2014/071108
申请日：2014-10-01
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： A magnetic sensor cell (1) comprises a magnetic tunnel junction (2) comprising a reference layer (23) having a reference magnetization (230) oriented substantially parallel to the plane of the reference layer (23), a sense layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense and reference layers (21, 23); and a magnetic device (4) configured for providing a sense magnetic field (42) adapted for aligning the sense magnetization (210). The sense layer magnetization (210) is orientable between a direction parallel to the plane of the sense layer (21) and a direction perpendicular to the plane of the sense layer (21) when the sense magnetic field (42) is provided. The magnetic sensor cell can be used for sensing an external magnetic field comprising a component (451) oriented parallel to the plane of the sense layer and a component (452) oriented perpendicular to the plane of the sense layer.
摘要翻译：磁传感器单元（1）包括磁性隧道结（2），其包括具有基本上平行于参考层（23）的平面定向的参考磁化（230）的参考层（23），感测层（21），其具有感测磁化（210）和在感测和参考层（21,23）之间的隧道势垒层（22）; 以及配置用于提供适于对准感测磁化（210）的感测磁场（42）的磁性装置（4）。当提供感测磁场（42）时，感测层磁化（210）可以在平行于感测层（21）的平面的方向和垂直于感测层（21）的平面的方向之间定向。磁传感器单元可以用于感测外部磁场，该外部磁场包括平行于感测层的平面定向的部件（451）和垂直于感测层的平面定向的部件（452）。

4. 发明申请

WO2016135611A1 MRAM-BASED PROGRAMMABLE MAGNETIC DEVICE FOR GENERATING RANDOM NUMBERS 审中-公开
标题翻译：用于生成随机数的基于MRAM的可编程磁性器件
公开(公告)号：WO2016135611A1
公开(公告)日：2016-09-01
申请号：PCT/IB2016/050935
申请日：2016-02-22
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien , STAINER, Quentin
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： The invention concerns a programmable magnetic device (1) for generating random numbers during a programming operation, comprising an array (10) of a plurality of magnetic tunnel junctions (2), each magnetic tunnel junction (2) comprising a reference layer (21) having a reference magnetization (210); a tunnel barrier layer (22); and a storage layer (23) having a storage magnetization (230); the programmable magnetic device (1) being arranged such that, during the programming operation, the storage magnetization (230) is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.
摘要翻译：本发明涉及一种用于在编程操作期间产生随机数的可编程磁性器件（1），其包括多个磁性隧道结（2）的阵列（10），每个磁性隧道结（2）包括参考层（21）具有参考磁化（210）; 隧道势垒层（22）; 和具有存储磁化（230）的存储层（23）。可编程磁性装置（1）被布置成使得在编程操作期间，存储磁化（230）可定向成不稳定的磁化结构，并且可以随机地从不稳定磁化结构中的多个稳定或亚稳定构型中的一个松弛。

5. 发明申请

WO2014082896A1 MAGNETORESISTIVE ELEMENT HAVING ENHANCED EXCHANGE BIAS AND THERMAL STABILITY FOR SPINTRONIC DEVICES 审中-公开
标题翻译：具有增强交换偏差的磁电元件和用于旋转装置的热稳定性
公开(公告)号：WO2014082896A1
公开(公告)日：2014-06-05
申请号：PCT/EP2013/074191
申请日：2013-11-19
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien , PREJBEANU, Ioan Lucian
IPC分类号： G11C11/16 , H01F10/32
CPC分类号： H01L43/08 , G11C11/161 , H01F10/3254 , H01F41/303 , H01L43/02
摘要： Magnetic element (1 ) comprising a first magnetic layer (21) having a first magnetization (210); a second magnetic layer (23) having a second magnetization (230); a tunnel barrier layer (22) comprised between the first and the second magnetic layers (21, 23); and an antiferromagnetic layer (24) exchanged coupling the second magnetic layer (23) such that the second magnetization (230) is pinned below a critical temperature of the antiferromagnetic layer (24), and can be freely varied when the antiferromagnetic layer (24) is heated above that critical temperature; the magnetic element (1 ) further comprising an oxygen gettering layer (25) between the second magnetic layer (23) and the antiferromagnetic layer (24), or within the second magnetic layer (23). The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.
摘要翻译：磁性元件（1）包括具有第一磁化（210）的第一磁性层（21）; 具有第二磁化强度（230）的第二磁性层（23）; 包括在第一和第二磁性层（21,23）之间的隧道势垒层（22）; 和反铁磁层（24），其交换耦合所述第二磁性层（23），使得所述第二磁化（230）被固定在所述反铁磁性层（24）的临界温度以下，并且当所述反铁磁层（24）被加热到临界温度以上; 所述磁性元件（1）还包括位于所述第二磁性层（23）和所述反铁磁性层（24）之间或所述第二磁性层（23）内的氧吸气层（25）。磁性元件减少了反铁磁层中的氧原子的插入，并且可能减少了第二磁性层中的锰的扩散，导致增强的交换偏压和/或增强的耐温度循环和改善的寿命。

6. 发明申请

WO2015039912A1 SELF-REFERENCED MEMORY DEVICE AND METHOD FOR OPERATING THE MEMORY DEVICE 审中-公开
标题翻译：自适应存储器件和操作存储器件的方法
公开(公告)号：WO2015039912A1
公开(公告)日：2015-03-26
申请号：PCT/EP2014/069082
申请日：2014-09-08
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22 , H01F10/32
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A self-referenced MRAM cell (1) comprises a first portion (2') of a magnetic tunnel junction (2) including a storage layer (23); a second portion (2") of the magnetic tunnel junction portion (2) including a tunnel barrier layer (22), a sense layer (21) and a seed layer (25); the seed layer (25) comprising a material having high spin-orbit coupling such that passing a sense current (32) along the plane of the sense layer (21) and/or seed layer (25) exerts a spin-orbit torque adapted for switching a sense magnetization (210) of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.
摘要翻译：自参考MRAM单元（1）包括包括存储层（23）的磁性隧道结（2）的第一部分（2'）; 包括隧道势垒层（22），感应层（21）和种子层（25）的磁性隧道结部分（2）的第二部分（2“）;种子层（25）自旋轨道耦合使得沿着感测层（21）和/或种子层（25）的平面传递感测电流（32）施加适于切换感测层的感测磁化强度（210）的自旋 - 轨道转矩还公开了一种包括多个MRAM单元的存储器件和用于操作存储器件的方法。

7. 发明申请

WO2016113618A1 MLU BASED MAGNETIC SENSOR HAVING IMPROVED PROGRAMMABILITY AND SENSITIVITY 审中-公开
标题翻译：具有改进的可编程性和灵敏度的基于MLU的磁传感器
公开(公告)号：WO2016113618A1
公开(公告)日：2016-07-21
申请号：PCT/IB2015/059917
申请日：2015-12-23
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G01R33/09 , B82Y25/00 , B82Y40/00 , H01F10/32 , G11C11/16 , H01F41/30 , H01L43/08 , H01L27/22
CPC分类号： G01R33/098 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254
摘要： The present disclosure concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of MLU cells (1), each MLU cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) freely orientable in the external magnetic field; a storage layer (23) having a storage magnetization (230); and a tunnel barrier layer (22) between the sense layer (21) and the storage layer (23); the magnetic sensor device (100) further comprising a stress inducing device (6) configured for applying an anisotropic mechanical stress on the magnetic tunnel junction (2) such as to induce a stress-induced magnetic anisotropy (271, 272) on at least one of the sense layer (21) and the storage layer (23); and the stress-induced magnetic anisotropy (271, 272) induced by the stress inducing device corresponding substantially to a net magnetic anisotropy (280) of said at least one of the sense layer (21) and the storage layer (23). The magnetic sensor device can be programmed easily and has improved sensitivity.
摘要翻译：本公开涉及用于感测外部磁场的磁传感器装置（100），包括多个MLU单元（1），每个MLU单元（1）包括磁性隧道结（2），该磁性隧道结（2）包括感测层（21）感测磁化（210）可在外部磁场中自由定向; 存储层（23），具有存储磁化（230）; 和在感测层（21）和存储层（23）之间的隧道势垒层（22）; 所述磁传感器装置（100）进一步包括应力诱导装置（6），所述应力诱导装置（6）被配置为在所述磁性隧道结（2）上施加各向异性机械应力，以便在至少一个上引起应力诱导的磁各向异性（271,272）的感应层（21）和存储层（23）; 以及由所述应力诱导装置引起的应力诱导的磁各向异性（271,272），其大致对应于所述至少一个感测层（21）和存储层（23）的净磁各向异性（280）。磁传感器设备可以轻松编程并提高灵敏度。

8. 发明申请

WO2015052062A1 METHOD FOR MEASURING THREE-DIMENSIONAL MAGNETIC FIELDS 审中-公开
标题翻译：测量三维磁场的方法
公开(公告)号：WO2015052062A1
公开(公告)日：2015-04-16
申请号：PCT/EP2014/071107
申请日：2014-10-01
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： Method for sensing an external magnetic field (45) using a magnetic sensor cell (1) comprising: a magnetic tunnel junction (2) including a reference layer (23) having a reference magnetization (230) oriented substantially parallel to the plane of the reference layer (23), a sense layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense and reference layers (21, 23); and a field line (4) configured for passing a field current (41 ) for providing a sense magnetic field (42) adapted for aligning the sense magnetization (210); the sense layer magnetization (210) being orientable between a direction parallel to the plane of the sense layer (21) and a direction perpendicular to the plane of the sense layer (21) when the sense magnetic field (42) is provided; the external magnetic field (45) comprising an in-plane component (451) oriented parallel to the plane of the sense layer (21) and an out-of-plane component (452) perpendicular to the plane of the sense layer (21); the method comprising: sensing the out-of-plane component (452); and sensing the in-plane component (451).
摘要翻译：一种用于使用磁传感器单元（1）感测外部磁场（45）的方法，包括：磁性隧道结（2），包括具有基准磁化（230）的参考层（23），基准磁化（230）基本上平行于参考层（23），具有感测磁化强度的感测层（21）和在感测层和参考层之间的隧道势垒层（22）; 以及场线（4），其配置用于通过用于提供适于对准所述感测磁化（210）的感测磁场（42）的励磁电流（41）; 当设置感测磁场（42）时，感测层磁化（210）可以在平行于感测层（21）的平面的方向和垂直于感测层（21）的平面的方向之间定向; 外部磁场（45）包括平行于感测层（21）的平面定向的平面内部件（451）和垂直于感测层（21）的平面的平面外部件（452） ; 所述方法包括：感测所述平面外部件（452）; 并感测所述平面内部件（451）。

9. 发明申请

WO2014177368A1 THERMALLY-ASSISTED MRAM CELLS WITH IMPROVED RELIABILITY AT WRITING 审中-公开
标题翻译：具有提高可靠性的热辅助MRAM细胞
公开(公告)号：WO2014177368A1
公开(公告)日：2014-11-06
申请号：PCT/EP2014/057415
申请日：2014-04-11
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien , PREJBEANU, Ioan Lucian
IPC分类号： G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
摘要： MRAM cell (1) comprising a magnetic tunnel junction (2) includinga reference layer (21), a storage layer(23) having a storage magnetization (230), a tunnel barrier layer (22) comprised between the reference and the storage layers (21, 23); andan antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230) at a low temperature threshold and free it at a high temperature threshold; the storage layer (23)comprising a first ferromagnetic layer (231) in contact with the tunnel barrier layer (22), a second ferromagnetic layer (234) in contact with theantiferromagnetic layer (24), and a lowsaturation magnetization storage layer (235) comprisinga ferromagnetic materialand a non-magneticmaterial. The MRAM cell can be written with improved reliability.
摘要翻译： MRAM单元（1）包括包括参考层（21）的磁性隧道结（2），具有存储磁化（230）的存储层（23），包括在参考和存储层之间的隧道势垒层（22） 21,23）; 和反铁磁层（24）交换耦合存储层（23），例如以低温阈值对存储磁化（230）进行引脚，并将其在高温阈值下释放; 所述存储层（23）包括与所述隧道势垒层（22）接触的第一铁磁层（231），与所述铁磁性层（24）接触的第二铁磁层（234）和低饱和磁化存储层（235）包括铁磁材料和非磁性材料。可以改善MRAM单元的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式