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1. 发明申请

WO2014177368A1 THERMALLY-ASSISTED MRAM CELLS WITH IMPROVED RELIABILITY AT WRITING 审中-公开
标题翻译：具有提高可靠性的热辅助MRAM细胞
公开(公告)号：WO2014177368A1
公开(公告)日：2014-11-06
申请号：PCT/EP2014/057415
申请日：2014-04-11
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien , PREJBEANU, Ioan Lucian
IPC分类号： G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
摘要： MRAM cell (1) comprising a magnetic tunnel junction (2) includinga reference layer (21), a storage layer(23) having a storage magnetization (230), a tunnel barrier layer (22) comprised between the reference and the storage layers (21, 23); andan antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230) at a low temperature threshold and free it at a high temperature threshold; the storage layer (23)comprising a first ferromagnetic layer (231) in contact with the tunnel barrier layer (22), a second ferromagnetic layer (234) in contact with theantiferromagnetic layer (24), and a lowsaturation magnetization storage layer (235) comprisinga ferromagnetic materialand a non-magneticmaterial. The MRAM cell can be written with improved reliability.
摘要翻译： MRAM单元（1）包括包括参考层（21）的磁性隧道结（2），具有存储磁化（230）的存储层（23），包括在参考和存储层之间的隧道势垒层（22） 21,23）; 和反铁磁层（24）交换耦合存储层（23），例如以低温阈值对存储磁化（230）进行引脚，并将其在高温阈值下释放; 所述存储层（23）包括与所述隧道势垒层（22）接触的第一铁磁层（231），与所述铁磁性层（24）接触的第二铁磁层（234）和低饱和磁化存储层（235）包括铁磁材料和非磁性材料。可以改善MRAM单元的可靠性。

2. 发明申请

WO2014082897A1 MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL WITH LOW POWER CONSUMPTION 审中-公开
标题翻译：具有低功耗的磁性随机存取存储器（MRAM）单元
公开(公告)号：WO2014082897A1
公开(公告)日：2014-06-05
申请号：PCT/EP2013/074194
申请日：2013-11-19
申请人： CROCUS TECHNOLOGY SA
发明人： LOMBARD, Lucien , PREJBEANU, Ioan Lucian
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08
摘要： A magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) containing: a storage layer (23) comprising at least one storage ferromagnetic layer (231, 232), each of said at least one storage ferromagnetic layer having a storage magnetization (234, 235);an antiferromagnetic storage layer (24) pinning the storage magnetization (234, 235) at a low threshold temperature and freeing them at a high temperature threshold;a reference layer (21); and a tunnel barrier layer (22) between the reference layer (21) and the storage layer (23);the magnetic tunnel junction (2) further comprising a free ferromagnetic layer (60) having a free magnetization (601) adapted to induce a magnetic stray field (55) magnetically coupling the free ferromagnetic layer (60) with the storage layer (23); such that said storage magnetization (234, 235) can be switched by the magnetic stray field (55) when the magnetic tunnel junction (2) is at the high temperature threshold. The disclosed MRAM cell has low power consumption.
摘要翻译：磁性随机存取存储器（MRAM）单元（1）包括磁性隧道结（2），其包含：包含至少一个存储铁磁层（231,232）的存储层（23），所述至少一个存储铁磁层具有存储磁化（234,235）;反铁磁存储层（24），其在低阈值温度下固定所述存储磁化（234,235）并在高温阈值下释放它们;参考层（21）; 以及在所述参考层（21）和所述存储层（23）之间的隧道势垒层（22）;所述磁性隧道结（2）还包括具有自由磁化强度（601）的自由铁磁层（60）将所述自由铁磁层（60）与所述存储层（23）磁耦合的磁性杂散场（55）; 使得当磁性隧道结（2）处于高温阈值时，所述存储磁化（234,235）可以被磁性杂散场（55）切换。所公开的MRAM单元具有低功耗。

3. 发明申请

WO2013182701A1 MRAM ELEMENT HAVING IMPROVED DATA RETENTION AND LOW WRITING TEMPERATURE 审中-公开
标题翻译：具有改进的数据保持和低写入温度的MRAM元件
公开(公告)号：WO2013182701A1
公开(公告)日：2013-12-12
申请号：PCT/EP2013/061851
申请日：2013-06-07
申请人： CROCUS TECHNOLOGY SA
发明人： PREJBEANU, Ioan Lucian , DIENY, Bernard , DUCRUET, Clarisse , LOMBARD, Lucien
IPC分类号： G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
摘要： The present disclosure concerns a thermally assisted switching MRAM element (1) comprising a magnetic tunnel junction (2) including a reference layer (21) having a reference magnetization (210); a storage layer (23) having a storage magnetization (230, 234, 235); a tunnel barrier layer (22) included between the storage layer (23) and the reference layer (21); and a storage antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230, 234, 235) at a low temperature threshold and to free it at a high temperature threshold; the antiferromagnetic layer (24) comprising: at least one first antiferromagnetic layer (241) having a first storage blocking temperature (T bs1 ), and at least one second antiferromagnetic layer (242) having a second storage blocking temperature (T bs2 ); wherein the first storage blocking temperature (TbSi) is below 200°C and the second storage blocking temperature (T bs2 ) is above 250°C. The MRAM element disclosed herein combines better data retention compared with known MRAM elements with low writing mode operating temperature.
摘要翻译：本公开涉及一种热辅助切换MRAM元件（1），其包括具有参考磁化（210）的参考层（21）的磁性隧道结（2）。存储层（23），具有存储磁化（230,234,235）; 包括在所述存储层（23）和所述参考层（21）之间的隧道势垒层（22）; 以及存储反铁磁层（24），交换耦合存储层（23），以便在低温阈值下对存储磁化（230,234,235）进行引脚，并将其在高温阈值下释放; 反铁磁层（24）包括：具有第一存储阻挡温度（Tbs1）的至少一个第一反铁磁层（241）和具有第二存储阻挡温度（Tbs2）的至少一个第二反铁磁层（242）; 其中第一储存阻挡温度（TbSi）低于200℃，第二储存阻挡温度（Tbs2）高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，本文公开的MRAM元件结合了更好的数据保持。

4. 发明申请

WO2014048757A1 MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 审中-公开
标题翻译：具有线性磁信号的磁性逻辑单元（MLU）单元和放大器
公开(公告)号：WO2014048757A1
公开(公告)日：2014-04-03
申请号：PCT/EP2013/068866
申请日：2013-09-12
申请人： CROCUS TECHNOLOGY SA
发明人： PREJBEANU, Ioan Lucian , DIENY, Bernard , MACKAY, Kenneth , Cambou, Bertrand
IPC分类号： H03F15/00 , G11C11/00 , G11C11/16
CPC分类号： H01L43/02 , G11C11/16 , G11C11/1675 , H01L43/10 , H03F15/00 , H03K19/18
摘要： The present disclosure concerns magnetic logic unit (MLU) cell (1) comprising a first and second magnetic tunnel junction (2), each comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization (230), and a barrier layer (22); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to adjust the first magnetization (210); the first and second magnetic layers (21, 23) and the barrier layer (22) being arranged such that the first magnetization (210) is magnetically coupled antiparallel with the second magnetization (230) through the barrier layer (22); the MLU cell (1) further comprising a biasing device (50) arranged for applying a static biasing magnetic field (53) oriented substantially parallel to the external magnetic field (42) such as to orient the first magnetization (210) at about 90° relative to the second magnetization (230), the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field (42).
摘要翻译：本公开涉及包括第一和第二磁性隧道结（2）的磁逻辑单元（MLU）单元（1），每个包括具有第一磁化（210）的第一磁性层（21），第二磁性层（23）具有第二磁化（230）和阻挡层（22）; 以及用于通过场电流（41）的场线（4），以产生适于调节第一磁化（210）的外部磁场（42）; 所述第一和第二磁性层（21,23）和所述阻挡层（22）被布置成使得所述第一磁化（210）通过所述阻挡层（22）与所述第二磁化（230）反平行地磁耦合; 所述MLU单元（1）还包括偏置装置（50），所述偏置装置（50）布置成施加基本上平行于所述外部磁场（42）定向的静态偏置磁场（53），以将所述第一磁化（210）定向在约90° 相对于第二磁化（230），第一和第二磁化相对于外部磁场（42）的方向对称取向。

5. 发明申请

WO2014114550A1 MRAM ELEMENT WITH LOW WRITING TEMPERATURE 审中-公开
标题翻译：具有低写温度的MRAM元件
公开(公告)号：WO2014114550A1
公开(公告)日：2014-07-31
申请号：PCT/EP2014/050772
申请日：2014-01-16
申请人： CROCUS TECHNOLOGY SA
发明人： PREJBEANU, Ioan Lucian , MORITZ, Jérôme , DIENY, Bernard
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , G11C2211/5615 , H01L43/02 , H01L43/08 , H01L43/10
摘要： MRAM element (1) having a magnetic tunnel junction (2) comprising a reference layer (21), a storage layer (23), a tunnel barrier layer (22) between the reference and storage layers (21, 23), and a storage antiferromagnetic layer (24); the storage antiferromagnetic layer (24) having a first function of exchange-coupling a storage magnetization (230) of the storage layer (23) and having a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction (2). The storage antiferromagnetic layer (24) further comprises at least one metallic element such as to vary the electrical resistivity of the storage antiferromagnetic layer, said at least one metallic element comprising one or a plurality of metallic layers embedded in the storage antiferromagnetic layer. The disclosed MRAM element has better data retention and low writing temperature.
摘要翻译： MRAM元件（1）具有包括参考层（21）的磁性隧道结（2），存储层（23），参考层和存储层（21,23）之间的隧道势垒层（22）反铁磁层（24）; 存储反铁磁层（24）具有交换耦合存储层（23）的存储磁化（230）的第一功能，并且具有当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能（2）。存储反铁磁层（24）还包括至少一种金属元件，例如改变存储反铁磁层的电阻率，所述至少一个金属元件包括嵌入存储反铁磁层中的一个或多个金属层。所公开的MRAM元件具有更好的数据保持和低写入温度。

6. 发明申请

WO2014082896A1 MAGNETORESISTIVE ELEMENT HAVING ENHANCED EXCHANGE BIAS AND THERMAL STABILITY FOR SPINTRONIC DEVICES 审中-公开
标题翻译：具有增强交换偏差的磁电元件和用于旋转装置的热稳定性
公开(公告)号：WO2014082896A1
公开(公告)日：2014-06-05
申请号：PCT/EP2013/074191
申请日：2013-11-19
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien , PREJBEANU, Ioan Lucian
IPC分类号： G11C11/16 , H01F10/32
CPC分类号： H01L43/08 , G11C11/161 , H01F10/3254 , H01F41/303 , H01L43/02
摘要： Magnetic element (1 ) comprising a first magnetic layer (21) having a first magnetization (210); a second magnetic layer (23) having a second magnetization (230); a tunnel barrier layer (22) comprised between the first and the second magnetic layers (21, 23); and an antiferromagnetic layer (24) exchanged coupling the second magnetic layer (23) such that the second magnetization (230) is pinned below a critical temperature of the antiferromagnetic layer (24), and can be freely varied when the antiferromagnetic layer (24) is heated above that critical temperature; the magnetic element (1 ) further comprising an oxygen gettering layer (25) between the second magnetic layer (23) and the antiferromagnetic layer (24), or within the second magnetic layer (23). The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.
摘要翻译：磁性元件（1）包括具有第一磁化（210）的第一磁性层（21）; 具有第二磁化强度（230）的第二磁性层（23）; 包括在第一和第二磁性层（21,23）之间的隧道势垒层（22）; 和反铁磁层（24），其交换耦合所述第二磁性层（23），使得所述第二磁化（230）被固定在所述反铁磁性层（24）的临界温度以下，并且当所述反铁磁层（24）被加热到临界温度以上; 所述磁性元件（1）还包括位于所述第二磁性层（23）和所述反铁磁性层（24）之间或所述第二磁性层（23）内的氧吸气层（25）。磁性元件减少了反铁磁层中的氧原子的插入，并且可能减少了第二磁性层中的锰的扩散，导致增强的交换偏压和/或增强的耐温度循环和改善的寿命。

7. 发明申请

WO2014048758A1 MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 审中-公开
标题翻译：具有线性磁信号的磁性逻辑单元（MLU）单元和放大器
公开(公告)号：WO2014048758A1
公开(公告)日：2014-04-03
申请号：PCT/EP2013/068867
申请日：2013-09-12
申请人： CROCUS TECHNOLOGY SA
发明人： PREJBEANU, Ioan Lucian , DIENY, Bernard , MACKAY, Kenneth , CAMBOU, Bertrand
IPC分类号： H03F13/00 , G11C11/00
CPC分类号： H01L43/02 , G11C11/16 , G11C11/1675 , H03F15/00 , H03K19/18
摘要： The present disclosure concerns a magnetic logic unit (MLU) cell comprising: a first magnetic tunnel junction (2) and a second magnetic tunnel junction (2), each magnetic tunnel junction comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization, and a tunnel barrier layer (22) between the first and second layer (21, 23); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to switch the first magnetization (210); the first magnetic layer (21) being arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field (42). The present disclosure also concerns an MLU amplifier (10) comprising a plurality of the MLU cell (1). The MLU amplifier has large gains, extended cut off frequencies and improved linearity.
摘要翻译：本公开涉及一种磁逻辑单元（MLU）单元，包括：第一磁性隧道结（2）和第二磁性隧道结（2），每个磁性隧道结包括具有第一磁化的第一磁性层（21）），具有第二磁化的第二磁性层（23）和位于第一和第二层（21,23）之间的隧道势垒层（22）。以及用于通过场电流（41）的场线（4），以产生适于切换第一磁化（210）的外部磁场（42）; 第一磁性层（21）被布置成使得磁隧道结磁化随所产生的外部磁场（42）线性变化。本公开还涉及包括多个MLU单元（1）的MLU放大器（10）。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。

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