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1. 发明申请

WO2011109231A3 CMP PROCESS FLOW FOR MEMS 审中-公开
标题翻译： MEMS的CMP工艺流程
公开(公告)号：WO2011109231A3
公开(公告)日：2011-12-29
申请号：PCT/US2011026167
申请日：2011-02-25
申请人： CAVENDISH KINETICS INC , LACEY JOSEPH DAMIAN GORDON , MAGUIRE THOMAS L , JOSHI VIKRAM , YOST DENNIS J
发明人： LACEY JOSEPH DAMIAN GORDON , MAGUIRE THOMAS L , JOSHI VIKRAM , YOST DENNIS J
IPC分类号： B81C1/00
CPC分类号： B81C1/00095 , B81B2203/04 , B81B2207/07 , B81C1/00611 , B81C2201/0104
摘要： The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.
摘要翻译：本发明总体上涉及在互补金属氧化物半导体（CMOS）线后端（BEOL）工艺中形成微机电系统（MEMS）悬臂开关。悬臂开关形成为与该结构中的下电极电连通。下电极可以被毯式沉积并被图案化或者简单地沉积在下面的结构的通孔或沟槽中。然后通过化学机械抛光或平坦化（CMP）将用于下电极的多余材料平坦化。然后在平面化的下电极上形成悬臂开关。

2. 发明申请

WO2012097234A3 METHOD FOR INCREASING A SACRIFICIAL LAYER ETCHING RATE AND DEVICE FORMED THEREOF 审中-公开
标题翻译：增加敏感层蚀刻速率的方法及其形成装置
公开(公告)号：WO2012097234A3
公开(公告)日：2012-09-13
申请号：PCT/US2012021218
申请日：2012-01-13
申请人： CAVENDISH KINETICS INC , RENAULT MICKAEL , LACEY JOSEPH DAMIAN GORDON , JOSHI VIKRAM , MAGUIRE THOMAS L
发明人： RENAULT MICKAEL , LACEY JOSEPH DAMIAN GORDON , JOSHI VIKRAM , MAGUIRE THOMAS L
IPC分类号： B81C1/00
CPC分类号： B81B3/0072 , B81B2203/0118 , B81B2203/0307 , B81B2207/096 , B81C1/00039 , B81C1/00333 , B81C1/00476 , B81C2201/0132 , B81C2201/014 , B81C2203/0145 , B81C2203/0714
摘要： The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.
摘要翻译：本发明一般涉及用于生产MEMS或NEMS装置和装置本身的方法。与悬臂结构相比，具有较低复合系数的材料的薄层可以沉积在悬臂结构，RF电极和拉出电极上。薄层允许引入空腔的蚀刻气体降低空腔内的整体蚀刻剂复合速率，从而提高空腔内的牺牲材料的蚀刻速率。蚀刻剂本身可以通过与悬臂结构的锚固部分线性对准的封装层中的开口引入，使得首先蚀刻最顶层的牺牲材料。此后，密封材料可以密封空腔并且一直延伸到空腔中，以锚定部分，以向锚固部分提供额外的强度。

3. 发明申请

WO2013020039A3 ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR 审中-公开
标题翻译：从MEMS CAVITY地板消除硅残余物
公开(公告)号：WO2013020039A3
公开(公告)日：2013-03-21
申请号：PCT/US2012049497
申请日：2012-08-03
申请人： CAVENDISH KINETICS INC , TROY BRIAN I , RENAULT MICKAEL , MAGUIRE THOMAS L , LACEY JOSEPH DAMIAN GORDON , BOBEY JAMES F
发明人： TROY BRIAN I , RENAULT MICKAEL , MAGUIRE THOMAS L , LACEY JOSEPH DAMIAN GORDON , BOBEY JAMES F
IPC分类号： B81C1/00 , H01H1/00
CPC分类号： B81C1/00484 , B81B3/0008 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81C2201/0108 , H01H1/0036 , H01H2001/0089
摘要： The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is then removed along with the sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to ad¬ here the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.
摘要翻译：本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。然后将粘附促进剂与牺牲材料一起除去。然而，粘合促进剂在除去后将空穴中的硅基残留物留下。发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。保留在基材剩余部分的粘合促进剂足以将牺牲材料附加到基材上，而不用担心牺牲材料分层。因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

4. 发明申请

WO2015034809A3 METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE 审中-公开
标题翻译：在MEMS器件中形成平面牺牲材料的方法
公开(公告)号：WO2015034809A3
公开(公告)日：2015-05-07
申请号：PCT/US2014053659
申请日：2014-09-02
申请人： CAVENDISH KINETICS INC
发明人： TROY BRIAN I , BOBEY JAMES F , RENAULT MICKAEL , LACEY JOSEPH DAMIAN GORDON , MAGUIRE THOMAS L
IPC分类号： B81C1/00
CPC分类号： B81C1/00611 , H01G5/16
摘要： The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the movable plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.
摘要翻译：本发明总体上涉及一种制造MEMS器件的方法。在MEMS装置中，可移动板设置在空腔内，使得可移动板可在空腔内移动。为了形成空腔，可以沉积牺牲材料，然后在其上沉积可移动板的材料。去除牺牲材料以释放可移动板以在腔内移动。一旦沉积，牺牲材料可能不够平坦，因为牺牲材料的最低点和最高点之间的高度差可能相当高。为了确保可移动板足够平坦，牺牲材料的平面度应该最大化。为了使牺牲材料的表面平面性最大化，可以沉积牺牲材料，然后进行导电加热以允许牺牲材料回流并因此平坦化。

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