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    • 5. 发明申请
    • MIRROR, PROJECTION OBJECTIVE COMPRISING SUCH A MIRROR, AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY COMPRISING SUCH A PROJECTION OBJECTIVE
    • 镜子,包括这种镜子的投影目标和投影曝光装置,用于包含这样的投影目标的微型计算机
    • WO2012041697A1
    • 2012-04-05
    • PCT/EP2011/065873
    • 2011-09-13
    • CARL ZEISS SMT GMBHFREIMANN, RolfBAER, NormanLIMBACH, GuidoBOEHM, ThureWITTICH, Gero
    • FREIMANN, RolfBAER, NormanLIMBACH, GuidoBOEHM, ThureWITTICH, Gero
    • G21K1/06
    • G02B5/0891B82Y10/00G03F7/70316G03F7/70958G21K1/062G21K2201/061
    • The invention relates to a mirror (la; la'; lb; lb'; lc; lc') comprising a substrate (S) and a layer arrangement, wherein the layer arrangement is designed in such a way that light (32) having a wavelength of less than 250 nm that is incident on the mirror (la; la'; lb; lb'; lc; lc') at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity, and the layer arrangement comprises at least one surface layer system (Ρ"') consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) comprise two individual layers composed of different materials for a high refractive index layer (Η"') and a low refractive index layer (L'"), wherein the layer arrangement comprises at least one layer (G, SPL, B) composed of graphene. Furthermore, the invention relates to the use of graphene (G, SPL, B) on optical elements for reducing the surface roughness to less than 0.1 nm rms HSFR and/or for protecting the optical element in the EUV wavelength range against a radiation-induced irreversible change in volume of more than 1% and/or as a barrier layer for preventing interdiffusion between layers of so-called multilayer layer mirrors in the EUV wavelength range.
    • 本发明涉及一种包括衬底(S)和层布置的反射镜(1a; 1a'; 1b; 1b; 1c; 1c),其中所述层布置被设计成使得具有 入射在反射镜(1a; 1a'; lb; lb'; lc; lc')上的小于250nm的波长在0°至30°之间的入射角至少有20%以上 其强度和层布置包括由各层的至少两个周期(P3)的周期性序列组成的至少一个表层系统(“),其中周期(P3)包括由不同材料组成的两个单独层 对于高折射率层(α“')和低折射率层(L'”),其中层布置包括由石墨烯组成的至少一层(G,SPL,B),此外,本发明涉及 在光学元件上使用石墨烯(G,SPL,B)将表面粗糙度降低到小于0.1nm rms HSFR和/或用于保护光学元件 EUV波长范围内的α元素相对于辐射诱发的不可逆体积变化大于1%和/或作为阻挡层用于防止EUV波长范围内所谓的多层反射镜层之间的相互扩散。