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1. 发明申请

WO2012063752A4 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
公开(公告)号：WO2012063752A4
公开(公告)日：2012-05-18
申请号：PCT/JP2011/075528
申请日：2011-10-31
申请人： CANON KABUSHIKI KAISHA , ABE, Katsumi , KUMOMI, Hideya , HAYASHI, Ryo , IWASAKI, Tatsuya
发明人： ABE, Katsumi , KUMOMI, Hideya , HAYASHI, Ryo , IWASAKI, Tatsuya
IPC分类号： H01L27/07 , H01L29/786 , H01L27/06 , H01L27/118 , H03K19/00
摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.

2. 发明申请

WO2007119386A1 FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用氧化硅膜的场效应晶体管及其制造方法
公开(公告)号：WO2007119386A1
公开(公告)日：2007-10-25
申请号：PCT/JP2007/055296
申请日：2007-03-08
申请人： CANON KABUSHIKI KAISHA , IWASAKI, Tatsuya , KUMOMI, Hideya
发明人： IWASAKI, Tatsuya , KUMOMI, Hideya
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618 , H01L29/78621
摘要： The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
摘要翻译：本发明提供一种场效应晶体管，其包括作为半导体层的氧化膜，其中氧化膜包括加入氢和氘之一的源极部分和漏极部分之一。

3. 发明申请

WO2009041544A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法及其显示装置
公开(公告)号：WO2009041544A1
公开(公告)日：2009-04-02
申请号：PCT/JP2008/067363
申请日：2008-09-18
申请人： CANON KABUSHIKI KAISHA , SHIMADA, Mikio , HAYASHI, Ryo , KUMOMI, Hideya
发明人： SHIMADA, Mikio , HAYASHI, Ryo , KUMOMI, Hideya
IPC分类号： H01L29/786
CPC分类号： H01L33/16 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L33/0054
摘要： A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.
摘要翻译：晶体管由栅电极2，栅绝缘层3，由非晶氧化物形成的半导体层4，源电极5，漏电极6和保护层7构成。保护层7设置在半导体层4与半导体层4接触，并且半导体层4包括至少用作沟道层的第一层和具有比第一层更高的电阻的第二层。第一层设置在半导体层4的栅电极2侧，第二层设置在半导体层4的保护层7侧。

4. 发明申请

WO2004053962A1 PROCESS FOR PRODUCING CRYSTALLINE THIN FILM 审中-公开
标题翻译：生产结晶薄膜的方法
公开(公告)号：WO2004053962A1
公开(公告)日：2004-06-24
申请号：PCT/JP2003/015717
申请日：2003-12-09
申请人： CANON KABUSHIKI KAISHA , KUMOMI, Hideya
发明人： KUMOMI, Hideya
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , C30B13/24 , C30B29/06 , H01L21/02691 , H01L21/2026
摘要： The invention provides a process for producing a crystalline thin film, characterized by including the steps of: (A) preparing a thin film having a specific region arranged at a predetermined position, the specific region continuing to a surrounding non-specific region and being different in melting or resolidification property from the surrounding non-specific region; (B) locally melting and resolidifying a partial area including the specific region in the thin film; and (C) locally melting and resolidifying another partial area including a non-specific region sharing a common boundary with an area crystallized by resolidification in a preceding step. The spatial position of the specific region can be accurately determined. The obtained crystalline thin film has crystal grains formed at predetermined positions, and therefore the fluctuation of formed elements are reduced.
摘要翻译：本发明提供了一种制备结晶薄膜的方法，其特征在于包括以下步骤：（A）制备具有排列在预定位置的特定区域的薄膜，该特定区域持续到周围的非特定区域并且是不同的在来自周围非特定区域的熔化或再凝固性能; （B）局部熔融并重新固化包括薄膜中特定区域的局部区域; 和（C）在前述步骤中局部熔融并重新固化另一部分区域，其包括与通过再凝固结晶的区域共享共同边界的非特定区域。可以准确地确定特定区域的空间位置。所得结晶薄膜在预定位置上形成晶粒，因此形成的元件的波动减小。

5. 发明申请

WO2009110623A1 METHOD OF TREATING SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：处理半导体元件的方法
公开(公告)号：WO2009110623A1
公开(公告)日：2009-09-11
申请号：PCT/JP2009/054355
申请日：2009-03-02
申请人： CANON KABUSHIKI KAISHA , OFUJI, Masato , ABE, Katsumi , SHIMIZU, Hisae , HAYASHI, Ryo , SANO, Masafumi , KUMOMI, Hideya , TAKAI, Yasuyoshi , KAWASAKI, Takehiko , KANEKO, Norio
发明人： OFUJI, Masato , ABE, Katsumi , SHIMIZU, Hisae , HAYASHI, Ryo , SANO, Masafumi , KUMOMI, Hideya , TAKAI, Yasuyoshi , KAWASAKI, Takehiko , KANEKO, Norio
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10 13 cm -2 eV -1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In-Ga-Zn-O (IGZO), amorphous In-Zn-O (IZO) and amorphous Zn-Sn-O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time- dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

6. 发明申请

WO2007105778A1 DRIVING CIRCUIT OF DISPLAY ELEMENT AND IMAGE DISPLAY APPARATUS 审中-公开
标题翻译：显示元件和图像显示设备的驱动电路
公开(公告)号：WO2007105778A1
公开(公告)日：2007-09-20
申请号：PCT/JP2007/055152
申请日：2007-03-08
申请人： CANON KABUSHIKI KAISHA , ABE, Katsumi , SANO, Masafumi , HAYASHI, Ryo , KUMOMI, Hideya
发明人： ABE, Katsumi , SANO, Masafumi , HAYASHI, Ryo , KUMOMI, Hideya
IPC分类号： G09G3/30 , G09G3/20 , H01L51/50
CPC分类号： G09G3/3283 , G09G3/2014 , G09G3/325 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0251 , G09G2310/066 , G09G2320/0238 , G09G2320/043
摘要： A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit.
摘要翻译：提供了新的驱动电路。根据本发明的驱动电路包括用于设置要提供给显示元件的电流的第一周期，用于设置显示元件的灰度级的第二周期和用于向显示器提供驱动电流的第三周期元件。本发明在显示元件的驱动电路中设置有用于向显示元件提供恒定电流的电流源电路和用于控制从电流源向显示元件提供恒定电流的时间的控制电路电路。

7. 发明申请

WO2010002029A1 LIGHT EMITTING DISPLAY APPARATUS 审中-公开
标题翻译：发光显示装置
公开(公告)号：WO2010002029A1
公开(公告)日：2010-01-07
申请号：PCT/JP2009/062263
申请日：2009-06-30
申请人： CANON KABUSHIKI KAISHA , TATEISHI, Yoshinori , OFUJI, Masato , KUMOMI, Hideya , HAYASHI, Ryo
发明人： TATEISHI, Yoshinori , OFUJI, Masato , KUMOMI, Hideya , HAYASHI, Ryo
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L27/3248 , H01L27/12 , H01L27/3258 , H01L27/3272 , H01L29/24 , H01L29/78633 , H01L29/7869 , H01L29/78693
摘要： There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.
摘要翻译：提供一种发光显示装置，至少包括用于驱动发光元件的发光元件和薄膜晶体管（TFT），其特征在于，提供一种机构，其中构成TFT的半导体被至少照射由发光元件发出的光的波长比预定波长长的光的一部分。

8. 发明申请

WO2008143304A1 INVERTER MANUFACTURING METHOD AND INVERTER 审中-公开
标题翻译：逆变器制造方法和逆变器
公开(公告)号：WO2008143304A1
公开(公告)日：2008-11-27
申请号：PCT/JP2008/059401
申请日：2008-05-15
申请人： CANON KABUSHIKI KAISHA , OFUJI, Masato , ABE, Katsumi , HAYASHI, Ryo , SANO, Masafumi , KUMOMI, Hideya
发明人： OFUJI, Masato , ABE, Katsumi , HAYASHI, Ryo , SANO, Masafumi , KUMOMI, Hideya
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1233
摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.
摘要翻译：为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

9. 发明申请

WO2008139940A1 LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2008139940A1
公开(公告)日：2008-11-20
申请号：PCT/JP2008/058296
申请日：2008-04-23
申请人： CANON KABUSHIKI KAISHA , OFUJI, Masato , ABE, Katsumi , HAYASHI, Ryo , SANO, Masafumi , KUMOMI, Hideya
发明人： OFUJI, Masato , ABE, Katsumi , HAYASHI, Ryo , SANO, Masafumi , KUMOMI, Hideya
IPC分类号： H01L27/32
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L29/7869 , H01L51/5256
摘要： To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm 2 V -1 s -1 , and the second electrode is connected with the drain electrode of the thin film transistor.
摘要翻译：为了提供可以实现高清晰度并且布线部分的连接可靠性优异的发光装置，发光装置包括：基板; 发光元件，其包括以所述顺序层叠在所述基板上的第一电极，发光层和第二电极; 以及薄膜晶体管，其为n型并且包括沟道层和漏电极，所述发光元件和所述薄膜晶体管平行并且与所述衬底接触，所述薄膜晶体管的沟道层具有等于或大于1cm 2的电场效应迁移率，其中第二电极与漏极连接薄膜晶体管的电极。

10. 发明申请

WO2008093583A1 ACTIVE MATRIX DISPLAY APPARATUS 审中-公开
标题翻译：主动矩阵显示设备
公开(公告)号：WO2008093583A1
公开(公告)日：2008-08-07
申请号：PCT/JP2008/050926
申请日：2008-01-17
申请人： CANON KABUSHIKI KAISHA , OFUJI, Masato , ABE, Katsumi , SANO, Masafumi , KUMOMI, Hideya , HAYASHI, Ryo
发明人： OFUJI, Masato , ABE, Katsumi , SANO, Masafumi , KUMOMI, Hideya , HAYASHI, Ryo
IPC分类号： H01L27/32
CPC分类号： H01L27/3265 , H01L27/3248 , H01L2227/323 , H01L2251/5323
摘要： An active matrix display apparatus including a transistor 20, a storage capacitor 30 and a light-emitting element 40, which are formed on a substrate 10. The transistor 20 has a source electrode 21, a drain electrode 22 and a gate electrode 23. The storage capacitor 30 has a multilayered structure of a first electrode 31, a dielectric layer 32 and a second electrode 33 stacked in this order on the substrate 10. The light-emitting element 40 has a multilayered structure of a third electrode 41, a light-emitting layer 42 and a fourth electrode 43 stacked in this order on the substrate 10. The first electrode 31 is connected to the gate electrode 23, and at least a part of the storage capacitor 30 is disposed between the substrate 10 and the light-emitting element 40. All of the substrate 10, the first electrode 31, second electrode 33 and the third electrode 41 are formed from a material transmitting a visible light.
摘要翻译：一种有源矩阵显示装置，包括形成在基板10上的晶体管20，存储电容30和发光元件40.晶体管20具有源极21，漏极22和栅电极23。存储电容器30具有在基板10上依次层叠的第一电极31，电介质层32和第二电极33的多层结构。发光元件40具有第三电极41，发光层42和第四电极43依次层叠在基板10上。第一电极31与栅电极23连接，保持电容30的至少一部分配置在基板10和发光层基板10，第一电极31，第二电极33和第三电极41都由透射可见光的材料形成。

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