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1. 发明申请

WO2012063752A1 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：WO2012063752A1
公开(公告)日：2012-05-18
申请号：PCT/JP2011075528
申请日：2011-10-31
申请人： CANON KK , ABE KATSUMI , KUMOMI HIDEYA , HAYASHI RYO , IWASAKI TATSUYA
发明人： ABE KATSUMI , KUMOMI HIDEYA , HAYASHI RYO , IWASAKI TATSUYA
IPC分类号： H01L27/07 , H01L27/06 , H01L27/118 , H01L29/786 , H03K19/00
CPC分类号： H01L29/7869 , G05F3/02 , H01L27/0705 , H01L27/11807 , H01L27/1203 , H03K17/063 , H03K17/693 , H03K19/20
摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.
摘要翻译：提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

2. 发明申请

WO2009072532A1 OXIDE SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYER AND DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：包含绝缘层的氧化物半导体器件和使用其的显示器件
公开(公告)号：WO2009072532A1
公开(公告)日：2009-06-11
申请号：PCT/JP2008/071989
申请日：2008-11-27
申请人： CANON KABUSHIKI KAISHA , SATO, Ayumu , HAYASHI, Ryo , YABUTA, Hisato , WATANABE, Tomohiro
发明人： SATO, Ayumu , HAYASHI, Ryo , YABUTA, Hisato , WATANABE, Tomohiro
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78606
摘要： Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4 x 10 21 atoms/cm 3 or less, and the third insulating layer having a hydrogen content of more than 4 x 10 21 atoms/cm 3 .
摘要翻译：提供一种氧化物半导体器件，其包括氧化物半导体层和与氧化物半导体层接触的绝缘层，其中绝缘层包括：与氧化物半导体接触的第一绝缘层，其厚度为50nm以上并且包括含有Si和O的氧化物; 与第一绝缘层接触的第二绝缘层，其厚度为50nm以上，并且包括含有Si和N的氮化物; 和与第二绝缘层接触的第三绝缘层，第一绝缘层和第二绝缘层，氢含量为4×10 21原子/ cm 3以下，第三绝缘层的氢含量大于4× 1021原子/ cm3。

3. 发明申请

WO2009041544A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法及其显示装置
公开(公告)号：WO2009041544A1
公开(公告)日：2009-04-02
申请号：PCT/JP2008/067363
申请日：2008-09-18
申请人： CANON KABUSHIKI KAISHA , SHIMADA, Mikio , HAYASHI, Ryo , KUMOMI, Hideya
发明人： SHIMADA, Mikio , HAYASHI, Ryo , KUMOMI, Hideya
IPC分类号： H01L29/786
CPC分类号： H01L33/16 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L33/0054
摘要： A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.
摘要翻译：晶体管由栅电极2，栅绝缘层3，由非晶氧化物形成的半导体层4，源电极5，漏电极6和保护层7构成。保护层7设置在半导体层4与半导体层4接触，并且半导体层4包括至少用作沟道层的第一层和具有比第一层更高的电阻的第二层。第一层设置在半导体层4的栅电极2侧，第二层设置在半导体层4的保护层7侧。

4. 发明申请

WO2008149873A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR 审中-公开
标题翻译：使用氧化物半导体薄膜晶体管的制造方法
公开(公告)号：WO2008149873A1
公开(公告)日：2008-12-11
申请号：PCT/JP2008/060246
申请日：2008-05-28
申请人： CANON KABUSHIKI KAISHA , OMURA, Hideyuki , HAYASHI, Ryo
发明人： OMURA, Hideyuki , HAYASHI, Ryo
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78618
摘要： A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the gate insulation film on the gate electrode; forming a semiconductor layer including amorphous oxide on the gate insulation film; patterning the gate insulation film; patterning the oxide semiconductor layer; reducing the oxide semiconductor layer in resistance by forming the first insulation film on the oxide semiconductor layer in the atmosphere not including an oxidized gas; patterning the fist insulation film and forming a contact hole between the source electrode and the drain electrode and the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer in the oxide semiconductor layer through the contact hole; forming the source electrode and the drain electrode through the contact hole and allowing the first insulation film to be exposed; patterning the exposed first insulation film and allowing a channel region of the oxide semiconductor layer to be exposed; and increasing the channel region in resistance by forming the second insulation film on the surface including the channel region of the oxide semiconductor layer in the atmosphere including an oxidized gas.
摘要翻译：一种在基板上至少具有栅电极，栅绝缘膜，氧化物半导体层，第一绝缘膜，源电极，漏电极和第二绝缘膜的薄膜晶体管的制造方法，包括：形成基板上的栅电极; 在栅电极上形成栅极绝缘膜; 在所述栅极绝缘膜上形成包含无定形氧化物的半导体层; 图案化栅极绝缘膜; 图案化氧化物半导体层; 通过在不包含氧化气体的气氛中在氧化物半导体层上形成第一绝缘膜来减小电阻的氧化物半导体层; 图案化第一绝缘膜并在源电极和漏电极和氧化物半导体层之间形成接触孔; 在所述氧化物半导体层中通过所述接触孔形成源电极层和漏电极层; 通过所述接触孔形成所述源电极和所述漏电极，并使所述第一绝缘膜露出; 图案化暴露的第一绝缘膜并允许暴露氧化物半导体层的沟道区; 以及通过在包括氧化气体的气氛中的包括氧化物半导体层的沟道区域的表面上形成第二绝缘膜来增加电阻的沟道区域。

5. 发明申请

WO2009139483A1 SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS 审中-公开
标题翻译：半导体器件和显示器
公开(公告)号：WO2009139483A1
公开(公告)日：2009-11-19
申请号：PCT/JP2009/059104
申请日：2009-05-11
申请人： CANON KABUSHIKI KAISHA , YABUTA, Hisato , OFUJI, Masato , TAKAI, Yasuyoshi , KAWASAKI, Takehiko , KANEKO, Norio , HAYASHI, Ryo
发明人： YABUTA, Hisato , OFUJI, Masato , TAKAI, Yasuyoshi , KAWASAKI, Takehiko , KANEKO, Norio , HAYASHI, Ryo
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/78645 , H01L29/78633
摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.
摘要翻译：提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在所述光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变光由调光机构调节。

6. 发明申请

WO2009139482A1 METHOD FOR CONTROLLING THRESHOLD VOLTAGE OF SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：用于控制半导体元件的阈值电压的方法
公开(公告)号：WO2009139482A1
公开(公告)日：2009-11-19
申请号：PCT/JP2009/059103
申请日：2009-05-11
申请人： CANON KABUSHIKI KAISHA , OFUJI, Masato , TAKAI, Yasuyoshi , KAWASAKI, Takehiko , KANEKO, Norio , HAYASHI, Ryo
发明人： OFUJI, Masato , TAKAI, Yasuyoshi , KAWASAKI, Takehiko , KANEKO, Norio , HAYASHI, Ryo
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969
摘要： A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.
摘要翻译：用于控制具有至少半导体作为分量的半导体元件的阈值电压的方法的特征在于包括测量作为阈值电压的指标的阈值电压和特征值之一的处理; 基于所测量的阈值电压和作为阈值电压的指标的测量特征值之一来确定用于照射半导体的光的照射强度，照射时间和波长之一的处理; 以及将照射强度，照射时间和波长中的一个已经确定到半导体上的光照射的过程; 其中照射半导体的光是比半导体的吸收边缘的波长长的波长的光，并且通过光的照射来改变阈值电压。

7. 发明申请

WO2009136645A2 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2009136645A2
公开(公告)日：2009-11-12
申请号：PCT/JP2009058724
申请日：2009-04-28
申请人： CANON KK , SATO AYUMU , HAYASHI RYO , YABUTA HISATO , SANO MASAFUMI
发明人： SATO AYUMU , HAYASHI RYO , YABUTA HISATO , SANO MASAFUMI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78621
摘要： Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode.
摘要翻译：提供一种共面结构薄膜晶体管，其制造方法允许阈值电压在电应力下变化很小。薄膜晶体管至少在基板上包括：栅电极; 栅极绝缘层; 包括源电极，漏电极和沟道区的氧化物半导体层; 通道保护层; 和层间绝缘层。沟道保护层包括一层或多层，一层或多层中与氧化物半导体层接触的层由含氧的绝缘材料制成，沟道保护层的端部比通道保护层的中心部分薄层间绝缘层含有氢，与层间绝缘层直接接触的氧化物半导体层的区域形成源电极和漏电极。

8. 发明申请

WO2009093722A1 THIN FILM TRANSISTOR AND METHOD OF PRODUCING SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2009093722A1
公开(公告)日：2009-07-30
申请号：PCT/JP2009/051142
申请日：2009-01-20
申请人： CANON KABUSHIKI KAISHA , TAKAHASHI, Kenji , HAYASHI, Ryo
发明人： TAKAHASHI, Kenji , HAYASHI, Ryo
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78648
摘要： A first gate electrode (2) is formed on a substrate (1); a first gate insulating layer (3) is formed so as to cover the first gate electrode (2); a semiconductor layer (4) including an oxide semiconductor is formed on the first gate insulating layer (3); a second gate insulating layer (7) is formed on the semiconductor layer (4); a second gate electrode (8) having a thickness equal to or larger than a thickness of the first gate electrode (2) is formed on the second gate insulating layer (7); and a drain electrode (6) and a source electrode (5) are formed so as to be connected to the semiconductor layer (4).
摘要翻译：第一栅电极（2）形成在基板（1）上; 形成第一栅极绝缘层（3）以覆盖第一栅电极（2）; 在第一栅极绝缘层（3）上形成包括氧化物半导体的半导体层（4）; 在所述半导体层（4）上形成第二栅绝缘层（7）。在所述第二栅极绝缘层（7）上形成厚度等于或大于所述第一栅电极（2）的厚度的第二栅电极（8）。并且形成漏电极（6）和源电极（5），以连接到半导体层（4）。

9. 发明申请

WO2008069255A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND DISPLAY APPARATUS 审中-公开
标题翻译：使用氧化物半导体和显示设备制造薄膜晶体管的方法
公开(公告)号：WO2008069255A1
公开(公告)日：2008-06-12
申请号：PCT/JP2007/073529
申请日：2007-11-29
申请人： CANON KABUSHIKI KAISHA , OMURA, Hideyuki , HAYASHI, Ryo , KAJI, Nobuyuki , YABUTA, Hisato
发明人： OMURA, Hideyuki , HAYASHI, Ryo , KAJI, Nobuyuki , YABUTA, Hisato
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.
摘要翻译：通过在基板上形成栅电极，在栅电极上形成第一绝缘膜，在非晶氧化物上在第一绝缘膜上形成氧化物半导体层，形成第一绝缘膜，图案化氧化物半导体，制造薄膜晶体管层，在含氧化气体的气氛中在所述氧化物半导体层上形成第二绝缘膜，图案化所述第二绝缘膜以露出一对接触区域，在所述一对接触区域上形成电极层，以及对所述电极层进行构图用于源电极和漏电极。

10. 发明申请

WO2008023553A1 PRODUCTION METHOD OF THIN FILM TRANSISTOR USING AMORPHOUS OXIDE SEMICONDUCTOR FILM 审中-公开
标题翻译：使用无定形氧化物半导体膜的薄膜晶体管的生产方法
公开(公告)号：WO2008023553A1
公开(公告)日：2008-02-28
申请号：PCT/JP2007/065114
申请日：2007-07-26
申请人： CANON KABUSHIKI KAISHA , ITAGAKI, Naho , DEN, Toru , KAJI, Nobuyuki , HAYASHI, Ryo , SANO, Masafumi
发明人： ITAGAKI, Naho , DEN, Toru , KAJI, Nobuyuki , HAYASHI, Ryo , SANO, Masafumi
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1 x 10 -3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，具备包含非晶氧化物半导体膜的活性层的薄膜晶体管，其特征在于，形成有源层的工序包括：在导入氧分压为1×10 5的气氛中形成氧化膜的第1工序， SUP> -3Pa以下，以及在第一工序后的氧化性气氛中退火氧化膜的第二工序。

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