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1. 发明申请

WO2012063752A4 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
公开(公告)号：WO2012063752A4
公开(公告)日：2012-05-18
申请号：PCT/JP2011/075528
申请日：2011-10-31
申请人： CANON KABUSHIKI KAISHA , ABE, Katsumi , KUMOMI, Hideya , HAYASHI, Ryo , IWASAKI, Tatsuya
发明人： ABE, Katsumi , KUMOMI, Hideya , HAYASHI, Ryo , IWASAKI, Tatsuya
IPC分类号： H01L27/07 , H01L29/786 , H01L27/06 , H01L27/118 , H03K19/00
摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.

2. 发明申请

WO2007119386A1 FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用氧化硅膜的场效应晶体管及其制造方法
公开(公告)号：WO2007119386A1
公开(公告)日：2007-10-25
申请号：PCT/JP2007/055296
申请日：2007-03-08
申请人： CANON KABUSHIKI KAISHA , IWASAKI, Tatsuya , KUMOMI, Hideya
发明人： IWASAKI, Tatsuya , KUMOMI, Hideya
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618 , H01L29/78621
摘要： The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
摘要翻译：本发明提供一种场效应晶体管，其包括作为半导体层的氧化膜，其中氧化膜包括加入氢和氘之一的源极部分和漏极部分之一。

3. 发明申请

WO2007119321A2 LIGHT-EMITTING DEVICE USING OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND IMAGE DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：使用氧化物半导体薄膜晶体管和图像显示装置的发光装置
公开(公告)号：WO2007119321A2
公开(公告)日：2007-10-25
申请号：PCT/JP2007/054601
申请日：2007-03-02
申请人： CANON KABUSHIKI KAISHA , HAYASHI, Ryo , IWASAKI, Tatsuya
发明人： HAYASHI, Ryo , IWASAKI, Tatsuya
IPC分类号： H01L27/32
CPC分类号： H01L27/3244 , H01L27/3211 , H01L27/326 , H01L29/7869 , H01L2251/5323
摘要： The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.
摘要翻译：本发明提供一种发光装置，包括：设置在基板上并包括蓝色像素区域，绿色像素区域和红色像素区域的像素区域，其对应于蓝色，绿色和红色三原色的光分别包括：具有源电极，漏电极，栅极电极，栅极绝缘膜和有源层的薄膜晶体管的像素区域; 发光层; 以及用于将发光层夹在其间的下电极和对电极，其中所述有源层包括氧化物; 漏电极与发光层的一部分电连接; 并且薄膜晶体管布置在基板上的除了蓝色像素区域之外的区域中。

4. 发明申请

WO2007029844A1 FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM 审中-公开
标题翻译：使用非晶氧化物膜作为通道层的场效应晶体管，使用非晶形氧化膜作为通道层的场效应晶体管的制造方法和非晶形氧化膜的制造方法
公开(公告)号：WO2007029844A1
公开(公告)日：2007-03-15
申请号：PCT/JP2006/317936
申请日：2006-09-05
申请人： CANON KABUSHIKI KAISHA , IWASAKI, Tatsuya
发明人： IWASAKI, Tatsuya
IPC分类号： H01L29/786
CPC分类号： H01L29/78693 , H01L29/66969 , Y10T29/41
摘要： An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.
摘要翻译：含有氢（或氘）的无定形氧化物被施加到晶体管的沟道层。因此，可以实现具有优异TFT特性的薄膜晶体管，具有小滞后，常关断操作，高ON / OFF比，高饱和电流等优异的TFT特性。此外，作为制造由非晶形氧化物制成的沟道层的方法，在含有氢气和氧气的气氛中进行成膜，可以控制非晶氧化物的载流子浓度。

5. 发明申请

WO2004093354A1 RECONFIGURABLE OPTOELECTRONIC CIRCUIT 审中-公开
标题翻译：可重新配置的光电路
公开(公告)号：WO2004093354A1
公开(公告)日：2004-10-28
申请号：PCT/JP2004/005413
申请日：2004-04-15
申请人： CANON KABUSHIKI KAISHA , IWASAKI, Tatsuya
发明人： IWASAKI, Tatsuya
IPC分类号： H04B10/20
CPC分类号： H04B10/801 , G02B6/4214 , G02B6/43
摘要： A reconfigurable optoelectronic circuit adapted to alter its internal configuration includes logic circuits, electric connections and optical connections. It comprises a plurality of logic blocks of electronic circuit and an optical circuit interconnecting them and both the internal configuration of each of the logic blocks and the optical interconnections of the logic blocks using the optical circuit are alterable.
摘要翻译：适于改变其内部配置的可重构光电子电路包括逻辑电路，电连接和光学连接。它包括电子电路的多个逻辑块和互连它们的光电路，并且每个逻辑块的内部配置以及使用该光学电路的逻辑块的光学互连都是可变的。

6. 发明申请

WO2004062138A1 PROCESS OF INFORMATION TRANSMISSION IN OPTICAL CIRCUIT DEVICE AND OPTICAL CIRCUIT DEVICE THEREFOR 审中-公开
标题翻译：光电路设备中信息传输的过程及其光电路设备
公开(公告)号：WO2004062138A1
公开(公告)日：2004-07-22
申请号：PCT/JP2003/016706
申请日：2003-12-25
申请人： CANON KABUSHIKI KAISHA , IWASAKI, Tatsuya
发明人： IWASAKI, Tatsuya
IPC分类号： H04B10/00
CPC分类号： G02B6/43 , H04B10/801
摘要： An information transmission process is disclosed in which information is transmitted between a signal-emitting port for emitting an optical signal and plural signal-receiving ports through a light transmissive medium in an optical circuit device. The process comprises a first step of transmitting a first information from the signal-emitting port by emitting light in a first emission angle range to transmit first information to at least one of the signal-receiving ports, and a second step, after the first step, of transmitting second information from the signal-emitting port by emitting light in a second emission angle range different from the first emission angle range to transmit second information to at least one of the signal-receiving ports.
摘要翻译：公开了一种信息发送处理，其中通过光电路装置中的透光介质在用于发射光信号的信号发射端口和多个信号接收端口之间传送信息。该过程包括第一步骤，通过在第一发射角度范围内发射光来从信号发射端口发送第一信息，以将第一信息发射到至少一个信号接收端口，第二步骤，在第一步骤之后通过发射与第一发射角度范围不同的第二发射角度范围的光来从信号发射端口发送第二信息，以将第二信息发射到信号接收端口中的至少一个。

7. 发明申请

WO2009075242A1 OXIDE FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：氧化物场效应晶体管
公开(公告)号：WO2009075242A1
公开(公告)日：2009-06-18
申请号：PCT/JP2008/072222
申请日：2008-12-02
申请人： CANON KABUSHIKI KAISHA , IWASAKI, Tatsuya , ITAGAKI, Naho
发明人： IWASAKI, Tatsuya , ITAGAKI, Naho
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： A field effect transistor includes at least a channel layer, a gate insulation layer, a source electrode, a drain electrode, and a gate electrode. The channel layer is formed from an amorphous oxide material that contains at least In and Mg, and an element ratio, expressed by Mg/(In + Mg), of the amorphous oxide material is 0.1 or higher and 0.48 or lower.
摘要翻译：场效应晶体管至少包括沟道层，栅绝缘层，源电极，漏电极和栅电极。沟道层由至少包含In和Mg的无定形氧化物材料形成，并且由非晶氧化物材料的Mg /（In + Mg）表示的元素比为0.1以上且0.48以下。

8. 发明申请

WO2006051994A2 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2006051994A2
公开(公告)日：2006-05-18
申请号：PCT/JP2005/020981
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , TOKYO INSTITUTE OF TECHNOLOGY , DEN, Tohru , IWASAKI, Tatsuya , HOSONO, Hideo , KAMIYA, Toshio , NOMURA, Kenji
发明人： DEN, Tohru , IWASAKI, Tatsuya , HOSONO, Hideo , KAMIYA, Toshio , NOMURA, Kenji
IPC分类号： H01L27/32 , H01L29/786
CPC分类号： H01L27/1225 , G03G5/08 , G03G5/144 , H01L27/1214 , H01L27/3248 , H01L27/3262 , H01L29/04 , H01L29/66969 , H01L29/78693 , H01L2251/5315
摘要： An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
摘要翻译：本发明的目的是提供一种使用无定形氧化物的新的发光装置。发光器件具有存在于第一和第二电极之间的发光层和场效应晶体管，其中有源层是无定形的。

9. 发明申请

WO2009096608A1 THIN FILM TRANSISTOR USING AN OXIDE SEMICONDUCTOR AND DISPLAY 审中-公开
标题翻译：使用氧化物半导体和显示器的薄膜晶体管
公开(公告)号：WO2009096608A1
公开(公告)日：2009-08-06
申请号：PCT/JP2009/052013
申请日：2009-01-30
申请人： CANON KABUSHIKI KAISHA , GOYAL, Amita , ITAGAKI, Naho , IWASAKI, Tatsuya
发明人： GOYAL, Amita , ITAGAKI, Naho , IWASAKI, Tatsuya
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C23C14/086
摘要： A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.
摘要翻译：薄膜晶体管包括形成在基板上的栅电极，栅极绝缘层，沟道层，源电极和漏电极，其中：沟道层包含铟，锗和氧; 并且沟道层具有由In /（In + Ge）表示的组成比为0.5以上且0.97以下。

10. 发明申请

WO2008149754A1 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：非晶氧化物和场效应晶体管
公开(公告)号：WO2008149754A1
公开(公告)日：2008-12-11
申请号：PCT/JP2008/059852
申请日：2008-05-22
申请人： CANON KABUSHIKI KAISHA , ITAGAKI, Naho , IWASAKI, Tatsuya
发明人： ITAGAKI, Naho , IWASAKI, Tatsuya
IPC分类号： H01L29/24 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/247
摘要： In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
摘要翻译：在场效应晶体管中，场效应晶体管的沟道层由包括In，Zn，N和O的无定形氧化物，N与N的原子组成比和O（N /（N + O））的原子组成比组成无定形氧化物等于或大于0.01原子％且等于或小于3原子％，并且非晶氧化物不包括Ga，或者在非晶氧化物包括Ga的情况下，包含在无定形氧化物小于N原子数。

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