专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2004104274A3 ZINC OXIDE CRYSTAL GROWTH SUBSTRATE 审中-公开
标题翻译：氧化锌晶体生长基材
公开(公告)号：WO2004104274A3
公开(公告)日：2005-08-11
申请号：PCT/US2004015881
申请日：2004-05-20
申请人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
IPC分类号： B32B9/00 , B32B9/04 , B32B13/04 , B32B19/00 , C30B20060101 , C30B25/00 , C30B29/16 , H01L21/20 , H01L21/363 , H01L21/365 , H01L21/368
CPC分类号： C30B25/00 , C30B29/16 , H01L21/02381 , H01L21/0242 , H01L21/02488 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/02631
摘要： A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.
摘要翻译：公开了一种氧化锌晶体生长衬底。氧化锌晶体生长衬底包括通过化学沉积工艺沉积在自支撑衬底表面上的单层氧化锌薄层。化学沉积工艺选自RF溅射，CVD（化学气相沉积），MOCVD（金属有机化学气相沉积），旋涂，电泳和水热生长过程。自支撑衬底可以是无定形的，多晶的或结晶的。氧化锌薄层具有允许与氧化锌相容的晶体的晶体生长的晶格。相容的晶体具有在氧化锌的相应晶格参数的约5％内的晶格参数。

2. 发明申请

WO2004105099A3 GROUP II-VI SEMICONDUCTOR DEVICES 审中-公开
标题翻译：第II-VI族半导体器件
公开(公告)号：WO2004105099A3
公开(公告)日：2009-03-26
申请号：PCT/US2004015884
申请日：2004-05-20
申请人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
IPC分类号： H01L27/15 , H01L21/365 , H01L21/368 , H01L29/22 , H01L29/267 , H01L33/28 , H01S5/30 , H01S5/327
CPC分类号： H01L33/285 , H01L21/0237 , H01L21/02554 , H01L21/02557 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02631 , H01L29/22 , H01L29/267 , H01S5/3059 , H01S5/327
摘要： Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction (50) containing a p-type (52) group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 1016 atoms'cm-3,the semiconductor resistivity is less than about 0.5 ohm.cm, and the carrier mobility is greater than about 0.1 cm//V-s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.
摘要翻译：公开了含有II-VI族半导体材料的半导体器件。器件可以包括含有p型（52）II-VI族半导体材料和n型半导体材料的p-n结（50）。 p型II-VI族半导体包括含有II族元素的原子，VI族元素的原子和一种或多种p型掺杂剂的单晶II-VI族半导体。 p型掺杂剂浓度大于约1016 atoms'cm-3，半导体电阻率小于约0.5欧姆·厘米，载流子迁移率大于约0.1厘米// V-s。半导体器件可以包括发光二极管，激光二极管，场效应晶体管和光电检测器。

3. 发明申请

WO2004073046A3 COMPOUNDS AND SOLID STATE APPARATUS HAVING ELECTROLUMINESCENT PROPERTIES 审中-公开
标题翻译：具有电致发光特性的化合物和固体状态装置
公开(公告)号：WO2004073046A3
公开(公告)日：2006-03-09
申请号：PCT/US2004004737
申请日：2004-02-17
申请人： ON INTERNATIONAL INC , BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
IPC分类号： C09K11/66 , C09K11/67 , C09K11/74 , C09K11/77 , H01L20060101 , H01L31/0232 , H05B33/00 , H05B33/14
CPC分类号： C09K11/663 , C09K11/666 , C09K11/671 , C09K11/677 , C09K11/7442 , C09K11/7774 , C09K11/7775 , C09K11/7786 , H05B33/145
摘要： Electroluminescent materials and devices which emit non-thermal light in response to an electric field are disclosed. The electroluminescent materials are based upon a multicomponent ceramic oxide host compound and one or more metal oxide dopant compounds which form a solid solution with the ceramic oxide host compound. The dopant is present in the host at an amount in the range from about 0.002 mole % to 0.1 mole %. In the electroluminescent devices, a layer of electroluminescent material (12, 32) is disposed between a transparent conductive oxide layer (14, 34) and a ground plane (16, 36). An electric field generator (18, 38) is electrically connected to the conductive oxide layer (14, 34) and the ground plane (16, 36) for generating an electric field. The layer of electroluminescent material (12, 32) is coated with at least one barrier layer (20, 40), and preferably a pair of barrier layers, to inhibit chemical reaction of the electroluminescent material. The electroluminescent devices preferable include a dielectric layer (42).
摘要翻译：公开了响应于电场发射非热光的电致发光材料和器件。电致发光材料基于多组分陶瓷氧化物主体化合物和与陶瓷氧化物主体化合物形成固溶体的一种或多种金属氧化物掺杂剂化合物。掺杂剂以约0.002摩尔％至0.1摩尔％的量存在于主体中。在电致发光器件中，一层电致发光材料（12,32）设置在透明导电氧化物层（14,34）和接地平面（16,36）之间。电场发生器（18,38）电连接到导电氧化物层（14,34）和用于产生电场的接地平面（16,36）。电致发光材料层（12,32）涂覆有至少一个阻挡层（20,40），最好是一对势垒层，以阻止电致发光材料的化学反应。电致发光器件优选包括电介质层（42）。

4. 发明申请

WO2004105098A3 P-TYPE GROUP II-VI SEMICONDUCTOR COMPOUNDS 审中-公开
标题翻译： P型II-VI族半导体化合物
公开(公告)号：WO2004105098A3
公开(公告)日：2005-04-14
申请号：PCT/US2004015883
申请日：2004-05-20
申请人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
IPC分类号： C30B23/02 , C30B25/02 , C30B29/48 , H01L21/363 , H01L21/365 , H01L21/368 , H01L29/22 , H01L29/225 , H01L29/227 , H01L33/28 , H01L29/12
CPC分类号： H01L33/285 , C30B23/02 , C30B25/02 , C30B29/48 , H01L21/0237 , H01L21/02554 , H01L21/02557 , H01L21/02579 , H01L21/02628 , H01L21/02631 , H01L29/22 , H01L29/225 , H01L29/227
摘要： A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group 11 elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm-cm, and the carrier mobility is greater than about 0.1 CM /V⋅s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, bismuth, copper, chalcogenides of the foregoing, and mixtures thereof.
摘要翻译：公开了一种持续性p型II-VI族半导体材料。 II-VI族半导体包括11族元素的原子，VI族元素的原子和一种或多种p型掺杂剂。 p型掺杂剂浓度足以使II-VI族半导体材料成为单晶形式。半导体电阻率小于约0.5欧姆 - 厘米，载流子迁移率大于约0.1厘米2 / V·s。 II族元素包括锌，镉，碱土金属如铍，镁钙，锶和钡，及其混合物。第Ⅵ族元素包括氧，硫，硒，碲及其混合物。 P型掺杂剂包括但不限于上述的氮，磷，砷，锑，铋，铜，硫族化物，及其混合物。

5. 发明申请

WO2005010120A3 RARE EARTH COMPOUNDS HAVING PHOTO-LUMINESCENT PROPERTIES AND APPLICATIONS THEREOF 审中-公开
标题翻译：具有光致发光特性的稀土化合物及其应用
公开(公告)号：WO2005010120A3
公开(公告)日：2009-04-09
申请号：PCT/US2004004569
申请日：2004-02-17
申请人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
IPC分类号： G02F2/02 , C09K20060101 , H01S3/00 , H01S3/10 , H01S3/102 , H01S3/16
CPC分类号： H01S3/16 , H01S3/102 , H01S3/1022 , H01S3/1603 , H01S3/1691
摘要： Up-conversion and down-conversion photo-luminescence in rare earth compounds are disclosed. Broadband, super-radiant, and discrete line emissions are observed. The rare earth compounds include a rare earth element and at least one other element selected from chalcogens, halogens, nitrogen, and phosphorus. The rare earth compounds include, but are not limited to, rare earth oxides, fluorides, and oxyfluorides. Doping and co-doping of rare earth compounds in an optical host material is not required. The compounds are irradiated with incident light having an incident wavelength that is selected to be highly absorbed by the rare earth compound. The up-conversion and down-conversion luminescence have been observed which may be caused by unknown electron transitions, particularly in the case of ytterbia.
摘要翻译：公开了稀土化合物中的上转换和下转换光发光。观察到宽带，超辐射和离散线路排放。稀土化合物包括稀土元素和至少一种选自硫属，卤素，氮和磷的其它元素。稀土化合物包括但不限于稀土氧化物，氟化物和氟氧化物。不需要在光学主体材料中掺杂和共掺杂稀土化合物。用入射波长的入射光照射化合物，该入射光被选择为被稀土化合物高度吸收。已经观察到上转换和下转换发光，其可能由未知的电子跃迁引起，特别是在镱的情况下。

6. 发明申请

WO2006009783A3 LOW DIELECTRIC CONSTANT ZINC OXIDE 审中-公开
标题翻译：低介电常数氧化锌
公开(公告)号：WO2006009783A3
公开(公告)日：2006-11-09
申请号：PCT/US2005021319
申请日：2005-06-17
申请人： ON INTERNATIONAL INC , BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER ROBERT H II , FELIX ROGER L , RENLUND GARY M
IPC分类号： C01G9/00 , C01B13/00 , C01B17/00 , C01B19/00 , C01G9/02 , H01L21/00 , H01L21/28 , H01L21/31 , H01L21/3115 , H01L21/316 , H01L21/363 , H01L21/365 , H01L21/469 , H01L23/58 , H01L27/15 , H01L29/225 , H01L29/26 , H01L31/0296 , H01L31/0328 , H01L31/12 , H01L33/28 , H01S5/30 , H01S5/327 , H01S5/347
CPC分类号： H01L33/28 , B82Y20/00 , C01G9/02 , C01P2006/40 , C30B25/02 , C30B29/16 , C30B29/48 , H01L21/02551 , H01L21/02554 , H01L21/02565 , H01L21/02568 , H01L21/02579 , H01L21/3115 , H01L21/316 , H01L23/5329 , H01L29/225 , H01L31/02963 , H01L33/025 , H01L33/285 , H01L2924/0002 , H01S5/305 , H01S5/3054 , H01S5/327 , H01S5/347 , H01L2924/00
摘要： Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450°C; for antimony, the temperature is at least about 650°C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.
摘要翻译：公开了诸如氧化锌的低介电常数组II-VI化合物和制造方法。低介电常数绝缘体材料通过用至少一摩尔％p型掺杂剂离子掺杂氧化锌来制造。通过用浓度至少为1017原子/ cm3的硅掺杂氧化锌来制造低介电常数氧化锌绝缘体材料。低介电氧化锌绝缘体材料是通过用浓度至少为约1018原子/ cm3的掺杂剂离子掺杂氧化锌，然后加热至将氧化锌转化为绝缘体的温度来制造的。温度根据掺杂剂的选择而变化。对于砷，温度至少为450℃左右; 对于锑，温度至少为约650℃。氧化锌半导体的介电常数通过以至少约1018至约1019原子/ cm3的浓度掺杂掺杂剂离子的氧化锌来降低。

7. 发明申请

WO2004105097A3 FABRICATION OF P-TYPE GROUP II-VI SEMICONDUCTORS 审中-公开
标题翻译： P型II-VI族半导体的制造
公开(公告)号：WO2004105097A3
公开(公告)日：2005-06-16
申请号：PCT/US2004015882
申请日：2004-05-20
申请人： BURGENER ROBERT II , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER ROBERT II , FELIX ROGER L , RENLUND GARY M
IPC分类号： H01L20060101 , H01L21/00 , H01L21/363 , H01L21/365 , H01L21/368
CPC分类号： H01L21/02631 , H01L21/0237 , H01L21/02554 , H01L21/02557 , H01L21/02579 , H01L21/02628
摘要： Commercially viable methods of manufacturing p-type group II-VI semiconductor materials are disclosed. A thin film of group II-VI semiconductor atoms is deposited on a self supporting substrate surface. The semiconductor material includes atoms of group II elements, group VI elements, and one or more p-type dopants. The semiconductor material may be deposited on the substrate surface under deposition conditions in which the group II atoms, group VI atoms, and p-type dopant atoms are in a gaseous phase prior to combining as the thin film. Alternatively, a liquid deposition process may be used to deposit the group II atoms, group VI atoms, and p-type dopant atoms in a predetermined orientation to result in the fabrication of the group II-VI semiconductor material. The resulting semiconductor thin film is a persistent .p-type semiconductor, and the p-type dopant concentration is greater than about 10 atoms cm . The semiconductor resistivity is less than about 0.5 ohm.cm.
摘要翻译：公开了制造p型II-VI族半导体材料的商业上可行的方法。 II-VI族半导体原子的薄膜沉积在自支撑衬底表面上。半导体材料包括II族元素的原子，VI族元素和一种或多种p型掺杂剂。半导体材料可以在组合作为薄膜之前的第二组原子，第VI族原子和p型掺杂剂原子处于气相的沉积条件下沉积在衬底表面上。或者，可以使用液体沉积工艺以预定方向沉积第II族原子，第VI族原子和p型掺杂剂原子，以导致II-VI族半导体材料的制造。得到的半导体薄膜是持续的p型半导体，p型掺杂剂浓度大于约10 16原子cm -3。半导体电阻率小于约0.5欧姆·厘米。

8. 发明申请

WO2006009782A3 PERSISTENT P-TYPE GROUP II-VI SEMICONDUCTORS 审中-公开
标题翻译： PERSICTE P-II组II-VI半导体
公开(公告)号：WO2006009782A3
公开(公告)日：2007-05-31
申请号：PCT/US2005021317
申请日：2005-06-17
申请人： ON INTERNATIONAL INC , BURGENER II ROBERT H , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER II ROBERT H , FELIX ROGER L , RENLUND GARY M
IPC分类号： H01L29/12 , C01G9/02 , H01L21/00 , H01L21/20 , H01L21/28 , H01L21/31 , H01L21/3115 , H01L21/316 , H01L21/363 , H01L21/365 , H01L21/469 , H01L23/58 , H01L27/15 , H01L29/225 , H01L29/26 , H01L31/0296 , H01L31/0328 , H01L31/12 , H01L33/28 , H01S5/30 , H01S5/327 , H01S5/347
CPC分类号： H01L33/28 , B82Y20/00 , C01G9/02 , C01P2006/40 , C30B25/02 , C30B29/16 , C30B29/48 , H01L21/02551 , H01L21/02554 , H01L21/02565 , H01L21/02568 , H01L21/02579 , H01L21/3115 , H01L21/316 , H01L23/5329 , H01L29/225 , H01L31/02963 , H01L33/025 , H01L33/285 , H01L2924/0002 , H01S5/305 , H01S5/3054 , H01S5/327 , H01S5/347 , H01L2924/00
摘要： A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.
摘要翻译：公开了一种持续性的p型II-VI族半导体材料，其包含II族元素的原子，VI族元素的原子和替代半导体材料中的VI族元素的原子的p型掺杂剂。 p型掺杂剂具有负氧化态。 p型掺杂剂引起半导体材料中II族元素的原子空位的形成。公开了含有II-VI族半导体材料的制造方法和固态器件。

9. 发明申请

WO2006009781A2 DYNAMIC P-N JUNCTION GROWTH 审中-公开
标题翻译：动态P-N结点增长
公开(公告)号：WO2006009781A2
公开(公告)日：2006-01-26
申请号：PCT/US2005021316
申请日：2005-06-17
申请人： ON INTERNATIONAL INC , BURGENER II ROBERT H , FELIX ROGER L , RENLUND GARY M
发明人： BURGENER II ROBERT H , FELIX ROGER L , RENLUND GARY M
IPC分类号： H01L23/58 , C01G9/02 , H01L21/00 , H01L21/28 , H01L21/31 , H01L21/3115 , H01L21/316 , H01L21/363 , H01L21/365 , H01L21/469 , H01L27/15 , H01L29/225 , H01L29/26 , H01L31/0296 , H01L31/0328 , H01L31/12 , H01L33/28 , H01S5/30 , H01S5/327 , H01S5/347
CPC分类号： H01L33/28 , B82Y20/00 , C01G9/02 , C01P2006/40 , C30B25/02 , C30B29/16 , C30B29/48 , H01L21/02551 , H01L21/02554 , H01L21/02565 , H01L21/02568 , H01L21/02579 , H01L21/3115 , H01L21/316 , H01L23/5329 , H01L29/225 , H01L31/02963 , H01L33/025 , H01L33/285 , H01L2924/0002 , H01S5/305 , H01S5/3054 , H01S5/327 , H01S5/347 , H01L2924/00
摘要： Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.
摘要翻译：公开了制造半导体p-n结的方法和包含p-n结的半导体器件的方法，其中p-n结含有可控制且与掺杂剂扩散分布无关的p型和n型掺杂剂的浓度分布。 p-n结设置在掺杂有p型掺杂剂的半导体层和掺杂有n型掺杂剂的半导体层之间。使用晶体生长工艺制造p-n结，其允许在晶体生长过程期间动态控制和p型和n型掺杂剂浓度的变化。

10. 发明申请

WO03058153A2 LOW OBSERVABLE AMMUNITION CASING 审中-公开
标题翻译：低可观察弹壳
公开(公告)号：WO03058153A2
公开(公告)日：2003-07-17
申请号：PCT/US0300210
申请日：2003-01-06
申请人： TTI ARMORY L L C , MACKERELL BRAD C , PAYNE RYAN E , FELIX RODGER L , RENLUND GARY M
发明人： MACKERELL BRAD C , PAYNE RYAN E , FELIX RODGER L , RENLUND GARY M
IPC分类号： F42B5/295 , F42B
CPC分类号： F42B5/025 , F42B5/295
摘要： A low observable, brass ammunition cartridge casing with an exterior surface having a colored coating which renders the cartridge casing low observable. The colored coating may be deposited onto the exterior surface by various processes, such as electroplating, chemical deposition, and spray painting. The colored coating may be selected from a variety of different colors such as, black, olive green, silver, brown, tan, gray, and white. The colors are typically obtained using conventional pigments and colorants, such as metal oxides. The brass casing exterior surface may be roughened to reduce the gloss or sheen of the casing on the colored coating. The invention includes ammunition cartridges containing a low observable brass casing described above.
摘要翻译：低可观察的黄铜弹药筒壳体，其外表面具有彩色涂层，这使得壳体壳体可观察不到。着色涂层可以通过各种工艺沉积到外表面上，例如电镀，化学沉积和喷涂。着色涂层可以选自各种不同的颜色，例如黑色，橄榄绿，银，棕色，棕褐色，灰色和白色。通常使用常规颜料和着色剂如金属氧化物获得颜色。黄铜套管外表面可以粗糙化以减少套管在着色涂层上的光泽或光泽。本发明包括含有上述低可观察黄铜外壳的弹药筒。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式