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    • 1. 发明申请
    • APPARATUS AND METHOD
    • 装置和方法
    • WO2012028784A1
    • 2012-03-08
    • PCT/FI2011/050752
    • 2011-08-30
    • BENEQ OYSOININEN, PekkaSNECK, Sami
    • SOININEN, PekkaSNECK, Sami
    • C23C16/455
    • C23C16/45551C23C16/45544
    • The invention is related to an apparatus and a method for processing a surface (4) of a substrate (2) by exposing the surface (4) of the substrate (2) to alternating surface reactions of at least a first starting material (A) and a second starting material (B) according to the principles of atomic layer deposition method. According to the invention a first starting material (A) is fed on the surface (4) of the substrate (2) locally by means of a source (6, 7, 8) by moving the source (6, 7, 8) in relation to the substrate (2), and the surface (4) of the substrate (2) processed with the first starting material (A) is exposed to a second starting material (B) present in the atmosphere (1 ) surrounding the source (6, 7, 8).
    • 本发明涉及通过将基板(2)的表面(4)暴露于至少第一起始材料(A)的交替表面反应来处理基板(2)的表面(4)的装置和方法, 和第二原料(B),按照原子层沉积法的原理。 根据本发明,通过将源(6,7,8)移动到第一起始材料(6,7,8)中,第一起始材料(A)通过源(6,7,8)局部地馈送在衬底(2)的表面(4)上 与基板(2)的关系以及用第一起始材料(A)处理的基板(2)的表面(4)暴露于围绕源的气氛(1)中存在的第二起始材料(B) 6,7,8)。
    • 2. 发明申请
    • COATING METHOD
    • 涂料方法
    • WO2009080889A1
    • 2009-07-02
    • PCT/FI2008/050769
    • 2008-12-19
    • BENEQ OYSOININEN, PekkaSNECK, Sami
    • SOININEN, PekkaSNECK, Sami
    • C23C16/52C23C16/455
    • C23C16/45527C23C16/52
    • The invention relates to a process for coating and/or doping a surface of a substrate, an inner surface of a structure or another piece to be processed in a reaction space with the atomic layer deposition method (ALD method). In the process the substrate surface to be processed is subjected alternately to iterated, saturated surface reactions by feeding successive pulses of starting materials into the reaction space. In accordance with the invention, a pulse of starting materials, whose amount is predetermined, is fed into the reaction space; the amount/concentration of the starting materials and/or reaction products thereof is measured in the reaction space during and/or after the pulse or on a continuous basis; the amount of starting materials to be fed into the reaction space in a subsequent cycle is determined on the basis of the measurement results obtained in step b); and a next pulse of starting materials, whose amount corresponds to the measurement results obtained in step c), is fed into the reaction space.
    • 本发明涉及一种用原子层沉积法(ALD法)在反应空间中涂覆和/或掺杂基材表面,结构的内表面或待处理的其它件的方法。 在该过程中,通过将连续的起始材料脉冲馈送到反应空间中,待处理的衬底表面被交替地进行重复饱和的表面反应。 根据本发明,将预定量的原料脉冲送入反应空间; 在脉冲期间和/或之后或连续的基础上,在反应空间中测量起始物质和/或其反应产物的量/浓度; 基于步骤b)中获得的测量结果确定在随后的循环中进料到反应空间中的起始原料的量; 并且其量对应于步骤c)中获得的测量结果的起始材料的下一个脉冲被馈送到反应空间中。