专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011101755A1 CHEMICAL-MECHANICAL PLANARIZATION OF SUBSTRATES CONTAINING COPPER, RUTHENIUM, AND TANTALUM LAYERS 审中-公开
标题翻译：含有铜，钌和钽酸盐的基板的化学机械平面化
公开(公告)号：WO2011101755A1
公开(公告)日：2011-08-25
申请号：PCT/IB2011/050238
申请日：2011-01-19
申请人： BASF SE , BASF (China) Company Limited , LI, Yuzhuo , WANG, Ke
发明人： LI, Yuzhuo , WANG, Ke
IPC分类号： C09G1/02
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1 ) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.
摘要翻译：一种化学机械抛光组合物，其包含：（a）至少一种类型的磨料颗粒; （b）至少两种氧化剂; （c）至少一种pH调节剂; 和（d）去离子水; （e）任选地包含至少一种抗氧化剂，以及用于对含有至少一个铜层，至少一个钌层和至少一个钽层的基材进行化学机械平坦化的方法，包括以下步骤：（1）所述化学机械抛光组合物; （2）使待研磨的基材表面与化学机械抛光组合物和抛光垫接触; 和（3）通过相对于衬底移动抛光垫来化学和机械地抛光衬底表面。

2. 发明申请

WO2013035034A1 A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A GLYCOSIDE 审中-公开
标题翻译：一种包含甘氨酸的化学机械抛光（CMP）组合物
公开(公告)号：WO2013035034A1
公开(公告)日：2013-03-14
申请号：PCT/IB2012/054555
申请日：2012-09-04
申请人： BASF SE , LI, Yuzhuo , LAUTER, Michael , LANGE, Roland , BASF (CHINA) COMPANY LIMITED
发明人： LI, Yuzhuo , LAUTER, Michael , LANGE, Roland
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09G1/00 , C09K13/00 , C23F1/00 , H01L21/30625 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein R 1 is alkyl, aryl, or alkylaryl, R 2 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R 3 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R 4 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R 5 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, and the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is in the range of from 1 to 20, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）无机颗粒，有机颗粒或其混合物或复合物，（B）式1至6的糖苷，其中R 1是烷基，芳基或烷芳基，R 2是H， X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，R3是H，X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，R4是H，X1，X2， X3，X4，X5，X6，烷基，芳基或烷基芳基，R5是H，X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，单糖单元（X1，X2， X3，X4，X5或X6）的范围为1〜20，（C）水性介质。

3. 发明申请

WO2012046183A1 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 审中-公开
标题翻译：化学机械抛光（CMP）组合物
公开(公告)号：WO2012046183A1
公开(公告)日：2012-04-12
申请号：PCT/IB2011/054355
申请日：2011-10-04
申请人： BASF SE , DRESCHER, Bettina , NOLLER, Bastian Marten , SCHMITT, Christine , SUGIHARTO, Albert Budiman , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： DRESCHER, Bettina , NOLLER, Bastian Marten , SCHMITT, Christine , SUGIHARTO, Albert Budiman , LI, Yuzhuo
IPC分类号： C09G1/02
CPC分类号： C09K13/04 , C09G1/02 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212
摘要： A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A)inorganic particles, organic particles, or a mixture thereof, (B)a heteropolyacid or a salt thereof, (C)a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D)an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.
摘要翻译：化学机械抛光（CMP）组合物摘要使用包含（A）无机颗粒，有机颗粒或其混合物的化学机械抛光（CMP）组合物，（B）杂多酸或其盐，（C）氯化物，氟化物，溴化物或其混合物作为阴离子，和（D）水性介质，用于抛光包含自钝化金属，锗，镍磷（NiP）或其混合物的基材。

4. 发明申请

WO2012046179A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES HAVING PATTERNED OR UNPATTERNED LOW-K DIELECTRIC LAYERS 审中-公开
标题翻译：水性抛光组合物和具有图形或未加工的低K介电层的化学机械抛光底材的工艺
公开(公告)号：WO2012046179A1
公开(公告)日：2012-04-12
申请号：PCT/IB2011/054344
申请日：2011-10-04
申请人： BASF SE , RAMAN, Vijay, Immanuel , RITTIG, Frank , LI, Yuzhuo , Chiu, Wei Lan William , BASF (CHINA) COMPANY LIMITED
发明人： RAMAN, Vijay, Immanuel , RITTIG, Frank , LI, Yuzhuo , Chiu, Wei Lan William
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , C09G1/04 , G09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21 ) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21 ) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices.
摘要翻译：一种水性抛光组合物，其包含（A）研磨颗粒和（B）选自水溶性或水分散性表面活性剂的两亲性非离子表面活性剂，所述水性或水分散性表面活性剂具有（b1）疏水基团，所述支链烷基选自具有10〜 18个碳原子; 和（b2）选自包含（b21）氧化乙烯单体单元和（b22）取代的氧化烯单体单元的聚氧化烯基的亲水基团，其中取代基选自烷基，环烷基或芳基，烷基 - 环烷基，烷基 - 芳基，环烷基 - 芳基和烷基 - 环烷基 - 芳基，所述含有单体单元（b21）和（b22）的聚氧化烯基以随机，交替，梯度和/或嵌段分布形式存在; 用于使用所述水性抛光组合物的具有图案化或未图案化的低k或超低k电介质层的衬底的CMP工艺; 以及使用所述水性抛光组合物制造电气，机械和光学装置。

5. 发明申请

WO2013018016A3 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5 审中-公开
公开(公告)号：WO2013018016A3
公开(公告)日：2013-02-07
申请号：PCT/IB2012/053878
申请日：2012-07-30
申请人： BASF SE , NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo
IPC分类号： B24B29/02
摘要： A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si 1-x Ge x material with 0.1 ≤ x

6. 发明申请

WO2013018015A2 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND 审中-公开
标题翻译：在包含特定有机化合物的CMP组合物存在下，制备包含元素锗和/或Si1-XGeX材料的化学机械抛光的半导体器件的制造方法
公开(公告)号：WO2013018015A2
公开(公告)日：2013-02-07
申请号：PCT/IB2012/053877
申请日：2012-07-30
申请人： BASF SE , NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/02024 , H01L21/31053 , H01L21/3212
摘要： A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si 1-x Ge x material with 0.1 ≤ x 11 R 12 R 13 R 14 ] + , wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (-OH), alkoxy (-OR 1 ), heterocyclic alkoxy (-OR 1 as part of a heterocyclic structure), carboxylic acid (-COOH), carboxylate (-COOR 2 ), amino (-NR 3 R 4 ), heterocyclic amino (-NR 3 R 4 as part of a heterocyclic structure), imino (=N-R 5 or -N=R 6 ), heterocyclic imino (=N-R 5 or -N=R 6 as part of a heterocyclic structure), phosphonate (-P(=0)(OR 7 )(OR 8 ) ), phosphate (-0-P(=0)(OR 9 )(OR 10 ) ), phosphonic acid (-P(=0)(OH) 2 ), phosphoric acid (-0-P(=0)(OH) 2 ) moiety, or their protonated or deprotonated forms, R 1 , R 2 , R 7 , R 9 is - independently from each other - alkyl, aryl, alkylaryl, or arylalkyl, R 3 , R 4 , R 5 , R 8 , R 10 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, R 6 is alkylene, or arylalkylene, R 11 , R 12 , R 13 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, and R 11 , R 12 , R 13 does not comprise any moiety (Z), R 14 is alkyl, aryl, alkylaryl, or arylalkyl, and R 14 does not comprise any moiety (Z), and (D) an aqueous medium.
摘要翻译：在化学机械抛光（CMP）组合物的存在下，包括化学机械抛光元素锗和/或Si1-xGex材料，其中0.1 = x <1的半导体器件的制造方法包括：（A）无机颗粒，有机物颗粒或其混合物或复合物，（B）至少一种类型的氧化剂，（C）至少一种类型的有机化合物，其包含至少{k}部分（Z），但不包括阴离子的盐无机且仅有机阳离子为[NR11R12R13R14] +，其中{k}为1,2或3，（Z）为羟基（-OH），烷氧基（-OR1），杂环烷氧基（-OR1为杂环的一部分结构），羧酸（-COOH），羧酸酯（-COOR 2），氨基（-NR 3 R 4），杂环氨基（作为杂环结构的一部分的-NR 3 R 4），亚氨基（= N-R 5或-N = （-O-R（OR = O）（OR 8）（OR 8）），磷酸（-O-P（= O）），膦酸（-P（= ）（OH）2），磷酸（-O-P（= O）（OH）2）部分或其质子化或去质子化形式，R 1，R 2，R 7，R 9彼此独立地为烷基，芳基，烷基芳基或芳基烷基，R 3，R 4，R 5，R 8，R 10彼此独立地为H，烷基，芳基，烷基芳基或芳烷基，R 6为亚烷基或芳基亚烷基，R 11，R 12，R 13为彼此独立的 - 烷基，芳基，烷基芳基或芳烷基，并且R 11，R 12，R 13不包含任何部分（Z），R 14是烷基，芳基，烷基芳基或芳基烷基，并且R 14不包含任何部分（Z），和（D）水性介质。

7. 发明申请

WO2012032466A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS 审中-公开
标题翻译：含有N-取代的二氧化二氮和/或氮氧化二氧化锡钠的水性抛光组合物
公开(公告)号：WO2012032466A1
公开(公告)日：2012-03-15
申请号：PCT/IB2011/053891
申请日：2011-09-06
申请人： BASF SE , NOLLER, Bastian , FRANZ, Diana , LI, Yuzhuo , USMAN IBRAHIM, Sheik Ansar , PINDER, Harvey Wayne , VENKATARAMAN, Shyam Sundar , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian , FRANZ, Diana , LI, Yuzhuo , USMAN IBRAHIM, Sheik Ansar , PINDER, Harvey Wayne , VENKATARAMAN, Shyam Sundar
IPC分类号： C09G1/02 , C09G1/04 , A01N51/00
CPC分类号： C09K13/00 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N'-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
摘要翻译：一种水性抛光组合物，其包含（A）至少一种选自N-取代的二氮化二氮化物和N'-羟基 - 二氮化鎓盐的水溶性或水分散性化合物; 和（B）至少一种类型的磨料颗粒; 化合物（A）用于制造电气，机械和光学装置的使用以及利用水性抛光组合物研磨用于电气，机械和光学装置的基材的方法。

8. 发明申请

WO2011104639A1 ABRASIVE ARTICLES, METHOD FOR THEIR PREPARATION AND METHOD OF THEIR USE 审中-公开
标题翻译：磨料制品及其制备方法及其使用方法
公开(公告)号：WO2011104639A1
公开(公告)日：2011-09-01
申请号：PCT/IB2011/050236
申请日：2011-01-19
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , KUJAT, Christof , LI, Yuzhuo , RUSHING, Kenneth
发明人： KUJAT, Christof , LI, Yuzhuo , RUSHING, Kenneth
IPC分类号： C09K3/14
CPC分类号： C09K3/1436 , B24B37/245 , B24D11/001 , H01L21/3212
摘要： Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (al) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.
摘要翻译：含有选自无机颗粒，有机颗粒和无机 - 有机杂化颗粒（a1）的固体研磨颗粒（A）的磨料制品，其通过激光衍射确定具有1至500nm的平均一次粒径，并具有电子提供化学键合到其表面的供体组（a2）。所述固体磨料颗粒（A）分布在固体基质（B）的整个上方或整个或整个固体基体（B）的顶部。提供了制造磨料制品的方法和用于处理可用于制造电气和光学装置的衬底的方法。所述方法利用所述磨料制品。

9. 发明申请

WO2011064734A1 PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开
标题翻译：从基板上移除大块材料层的方法和适用于本工艺的化学机械抛光剂
公开(公告)号：WO2011064734A1
公开(公告)日：2011-06-03
申请号：PCT/IB2010/055426
申请日：2010-11-25
申请人： BASF SE , RAMAN, Vijay Immanuel , EBERT, Sophia , BRANDS, Mario , LAN, Yongqing , ZACHARIAS, Philipp , GUBAYDULLIN, Ilshat , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： RAMAN, Vijay Immanuel , EBERT, Sophia , BRANDS, Mario , LAN, Yongqing , ZACHARIAS, Philipp , GUBAYDULLIN, Ilshat , LI, Yuzhuo
IPC分类号： H01L21/463 , C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1 ) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, - an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.
摘要翻译：（1）提供在化学机械抛光结束时显示的CMP试剂，而不添加补充材料，与其开始时相同的SER的方法，用于从基底去除体材料层并通过CMP平坦化暴露表面的方法和比开始时更低的MRR， - 低于初始SER的SER，和与初始MRR相同或基本相同的MRR，或比开始时更低的SER和较低的MRR; （2）使本体材料层的表面与CMP剂接触; （3）散装材料层的CMP与CMP剂; 和（4）继续CMP，直到从暴露表面去除所有材料残留物; 和CMP剂及其用于制造电气和光学器件的用途。

10. 发明申请

WO2012127398A1 A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE 审中-公开
标题翻译：包含聚合多胺的化学机械抛光（CMP）组合物
公开(公告)号：WO2012127398A1
公开(公告)日：2012-09-27
申请号：PCT/IB2012/051292
申请日：2012-03-19
申请人： BASF SE , NOLLER, Bastian Marten , LI, Yuzhuo , FRANZ, Diana , RUSHING, Kenneth , LAUTER, Michael , SHEN, Daniel Kwo-Hung , LAN, Yongqing , BAO, Zhenyu , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian Marten , LI, Yuzhuo , FRANZ, Diana , RUSHING, Kenneth , LAUTER, Michael , SHEN, Daniel Kwo-Hung , LAN, Yongqing , BAO, Zhenyu
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09G1/16 , H01L21/30625
摘要： A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (-COOR 1 ), sulfonate (-SO 3 R 2 ), sulfate (-O-SO 3 R 3 ), phos- phonate (-P(=O)(OR 4 )(OR 5 ) ), phosphate (-O-P(=O)(OR 6 )(OR 7 ) ), carboxylic acid (-COOH), sulfonic acid (-SO 3 H), sulfuric acid (-O-SO 3 -), phosphonic acid (-P(=O)(OH) 2 ), phosphoric acid (-O-P(=O)(OH) 2 ) moiety, or their deproto- nated forms, R 1 is alkyl, aryl, alkylaryl, or arylalkyl R 2 is alkyl, aryl, alkylaryl, or arylalkyl, R 3 is alkyl, aryl, alkylaryl, or arylalkyl, R 4 is alkyl, aryl, alkylaryl, or arylalkyl, R 5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R 6 is alkyl, aryl, alkylaryl, or arylalkyl, R 7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）无机颗粒，有机颗粒或其复合材料或混合物，（B）聚合多胺或其盐，其包含至少一种类型的侧基（Y），其包含至少一个部分（Z），其中（Z）是羧酸酯（-COOR1），磺酸酯（-SO3R2），硫酸酯（-O-SO3R3），磷酸酯（-P（= O）（OR4），磷酸酯（-OP（= O）（OR 6）（OR 7）），羧酸（-COOH），磺酸（-SO 3 H），硫酸（-O-SO 3 - ），膦酸（-P（= O）（OH）2），磷酸（-OP（= O）（OH）2）部分或其脱羧形式，R1是烷基，芳基，烷基芳基或芳烷基R2是烷基，芳基，烷基芳基或芳基烷基， R 3是烷基，芳基，烷基芳基或芳烷基，R 4是烷基，芳基，烷基芳基或芳烷基，R 5是H，烷基，芳基，烷基芳基或芳基烷基，R 6是烷基，烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式