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1. 发明申请

WO2012127398A1 A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE 审中-公开
标题翻译：包含聚合多胺的化学机械抛光（CMP）组合物
公开(公告)号：WO2012127398A1
公开(公告)日：2012-09-27
申请号：PCT/IB2012/051292
申请日：2012-03-19
申请人： BASF SE , NOLLER, Bastian Marten , LI, Yuzhuo , FRANZ, Diana , RUSHING, Kenneth , LAUTER, Michael , SHEN, Daniel Kwo-Hung , LAN, Yongqing , BAO, Zhenyu , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian Marten , LI, Yuzhuo , FRANZ, Diana , RUSHING, Kenneth , LAUTER, Michael , SHEN, Daniel Kwo-Hung , LAN, Yongqing , BAO, Zhenyu
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09G1/16 , H01L21/30625
摘要： A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (-COOR 1 ), sulfonate (-SO 3 R 2 ), sulfate (-O-SO 3 R 3 ), phos- phonate (-P(=O)(OR 4 )(OR 5 ) ), phosphate (-O-P(=O)(OR 6 )(OR 7 ) ), carboxylic acid (-COOH), sulfonic acid (-SO 3 H), sulfuric acid (-O-SO 3 -), phosphonic acid (-P(=O)(OH) 2 ), phosphoric acid (-O-P(=O)(OH) 2 ) moiety, or their deproto- nated forms, R 1 is alkyl, aryl, alkylaryl, or arylalkyl R 2 is alkyl, aryl, alkylaryl, or arylalkyl, R 3 is alkyl, aryl, alkylaryl, or arylalkyl, R 4 is alkyl, aryl, alkylaryl, or arylalkyl, R 5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R 6 is alkyl, aryl, alkylaryl, or arylalkyl, R 7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）无机颗粒，有机颗粒或其复合材料或混合物，（B）聚合多胺或其盐，其包含至少一种类型的侧基（Y），其包含至少一个部分（Z），其中（Z）是羧酸酯（-COOR1），磺酸酯（-SO3R2），硫酸酯（-O-SO3R3），磷酸酯（-P（= O）（OR4），磷酸酯（-OP（= O）（OR 6）（OR 7）），羧酸（-COOH），磺酸（-SO 3 H），硫酸（-O-SO 3 - ），膦酸（-P（= O）（OH）2），磷酸（-OP（= O）（OH）2）部分或其脱羧形式，R1是烷基，芳基，烷基芳基或芳烷基R2是烷基，芳基，烷基芳基或芳基烷基， R 3是烷基，芳基，烷基芳基或芳烷基，R 4是烷基，芳基，烷基芳基或芳烷基，R 5是H，烷基，芳基，烷基芳基或芳基烷基，R 6是烷基，烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

2. 发明申请

WO2012127399A1 A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING TWO TYPES OF CORROSION INHIBITORS 审中-公开
标题翻译：包含两种类型的腐蚀抑制剂的化学机械抛光（CMP）组合物
公开(公告)号：WO2012127399A1
公开(公告)日：2012-09-27
申请号：PCT/IB2012/051293
申请日：2012-03-19
申请人： BASF SE , NOLLER, Bastian , LAUTER, Michael , SUGIHARTO, Albert Budiman , LI, Yuzhuo , RUSHING, Kenneth , FRANZ, Diana , BÖHN, Roland , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian , LAUTER, Michael , SUGIHARTO, Albert Budiman , LI, Yuzhuo , RUSHING, Kenneth , FRANZ, Diana , BÖHN, Roland
IPC分类号： C09G1/02
CPC分类号： H01L21/3212 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/30625
摘要： A chemical-mechanical polishing ("CMP") composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1 ) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.
摘要翻译：包含（A）无机颗粒，有机颗粒或其混合物或复合物的化学机械抛光（“CMP”）组合物（P），（B）至少一种作为防腐剂的A / ）至少一种类型的另外的腐蚀抑制剂，其选自：（C1）炔属醇和（C2）（C2a）胺的盐或加合物，和（C2b）包含酰胺的羧酸部分，（D）至少一种类型的氧化剂，（E）至少一种类型的络合剂，和（F）水性介质。

3. 发明申请

WO2011058503A1 A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING INORGANIC PARTICLES AND POLYMER PARTICLES 审中-公开
标题翻译：包含无机颗粒和聚合物颗粒的化学机械抛光（CMP）组合物
公开(公告)号：WO2011058503A1
公开(公告)日：2011-05-19
申请号：PCT/IB2010/055101
申请日：2010-11-10
申请人： BASF SE , LAUTER, Michael , RAMAN, Vijay Immanuel , LI, Yuzhuo , VENKATARAMAN, Shyam Sundar , SHEN, Daniel Kwo-Hung , BASF (CHINA) COMPANY LIMITED
发明人： LAUTER, Michael , RAMAN, Vijay Immanuel , LI, Yuzhuo , VENKATARAMAN, Shyam Sundar , SHEN, Daniel Kwo-Hung
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）分散在液体介质（C）中的至少一种类型的无机颗粒，（B）分散在液体介质（C）中的至少一种类型的聚合物颗粒），（C）液体介质（C）中的无机粒子（A）的ζ电位和液体介质（C）中的聚合物粒子的ζ电位相同的液体介质。

4. 发明申请

WO2011064735A1 PROCESS FOR REMOVING BULK MATERIAL LAYER FROM SUBSTRATE AND CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开
标题翻译：用于从基板去除块状材料层的方法和适用于本工艺的化学机械抛光剂
公开(公告)号：WO2011064735A1
公开(公告)日：2011-06-03
申请号：PCT/IB2010/055427
申请日：2010-11-25
申请人： BASF SE , RAMAN, Vijay Immanuel , LI, Yuzhuo , BRANDS, Mario , LAN, Yongqing , RUSHING, Kenneth , RAMJI, Karpagavalli , BASF (CHINA) COMPANY LIMITED
发明人： RAMAN, Vijay Immanuel , LI, Yuzhuo , BRANDS, Mario , LAN, Yongqing , RUSHING, Kenneth , RAMJI, Karpagavalli
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/3105 , H01L21/306
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, － the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, － a lower SER than at its start and the same or essentially the same MRR as at its start or － a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.
摘要翻译：一种包含固体颗粒（a1）的水性化学机械抛光（CMP）剂（A），其包含（a11）金属缓蚀剂和（a12）固体材料，所述固体颗粒（a1）细分散在水相中 ; 并且其用于从基材表面除去大体材料层并通过化学机械抛光使暴露表面平坦化的工艺，直到所有材料残余物从暴露表面除去，其中CMP试剂在化学机械抛光，而不添加补充材料， - 与其开始时相同或基本相同的静态蚀刻速率（SER）和较低的材料去除速率（MRR），比起始时更低的SER，与其开始时相同或基本相同的MRR，或比开始时更低的SER和更低的MRR; 使得CMP试剂表现出软着色行为。

5. 发明申请

WO2012046183A1 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 审中-公开
标题翻译：化学机械抛光（CMP）组合物
公开(公告)号：WO2012046183A1
公开(公告)日：2012-04-12
申请号：PCT/IB2011/054355
申请日：2011-10-04
申请人： BASF SE , DRESCHER, Bettina , NOLLER, Bastian Marten , SCHMITT, Christine , SUGIHARTO, Albert Budiman , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： DRESCHER, Bettina , NOLLER, Bastian Marten , SCHMITT, Christine , SUGIHARTO, Albert Budiman , LI, Yuzhuo
IPC分类号： C09G1/02
CPC分类号： C09K13/04 , C09G1/02 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212
摘要： A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A)inorganic particles, organic particles, or a mixture thereof, (B)a heteropolyacid or a salt thereof, (C)a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D)an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.
摘要翻译：化学机械抛光（CMP）组合物摘要使用包含（A）无机颗粒，有机颗粒或其混合物的化学机械抛光（CMP）组合物，（B）杂多酸或其盐，（C）氯化物，氟化物，溴化物或其混合物作为阴离子，和（D）水性介质，用于抛光包含自钝化金属，锗，镍磷（NiP）或其混合物的基材。

6. 发明申请

WO2012123839A1 METHOD FOR FORMING THROUGH-BASE WAFER VIAS 审中-公开
标题翻译：通过基底波浪形成的方法
公开(公告)号：WO2012123839A1
公开(公告)日：2012-09-20
申请号：PCT/IB2012/050913
申请日：2012-02-28
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , LI, Yuzhuo , WANG, Changxue , SHEN, Daniel Kwo-Hung
发明人： LI, Yuzhuo , WANG, Changxue , SHEN, Daniel Kwo-Hung
IPC分类号： H01L21/50
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/76898
摘要： Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1 ) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.
摘要翻译：一种用于制造具有至少一个贯通基底晶片通孔的半导体晶片的方法，所述方法包括以下步骤：（1）提供具有至少一个导电通孔的半导体晶片，所述导电通孔包括导电金属并从半导体的前侧延伸晶片至少部分地穿过半导体晶片; （2）将半导体晶片的前端固定在载体上; （3）使半导体晶片的背面与抛光垫和pH等于或大于9的含水化学机械抛光组合物接触，并包含（A）磨料颗粒; （B）含有至少一种过氧化物基团的氧化剂; 和（C）作为金属螯合剂和金属缓蚀剂的添加剂; （4）对半导体晶片的背面进行化学机械抛光直至至少一个导电通孔露出。优选地，添加剂（C）是1,2,3-三唑。

7. 发明申请

WO2013018016A3 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5 审中-公开
公开(公告)号：WO2013018016A3
公开(公告)日：2013-02-07
申请号：PCT/IB2012/053878
申请日：2012-07-30
申请人： BASF SE , NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo
IPC分类号： B24B29/02
摘要： A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si 1-x Ge x material with 0.1 ≤ x

8. 发明申请

WO2013018015A2 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND 审中-公开
标题翻译：在包含特定有机化合物的CMP组合物存在下，制备包含元素锗和/或Si1-XGeX材料的化学机械抛光的半导体器件的制造方法
公开(公告)号：WO2013018015A2
公开(公告)日：2013-02-07
申请号：PCT/IB2012/053877
申请日：2012-07-30
申请人： BASF SE , NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： NOLLER, Bastian Marten , DRESCHER, Bettina , GILLOT, Christophe , LI, Yuzhuo
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/02024 , H01L21/31053 , H01L21/3212
摘要： A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si 1-x Ge x material with 0.1 ≤ x 11 R 12 R 13 R 14 ] + , wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (-OH), alkoxy (-OR 1 ), heterocyclic alkoxy (-OR 1 as part of a heterocyclic structure), carboxylic acid (-COOH), carboxylate (-COOR 2 ), amino (-NR 3 R 4 ), heterocyclic amino (-NR 3 R 4 as part of a heterocyclic structure), imino (=N-R 5 or -N=R 6 ), heterocyclic imino (=N-R 5 or -N=R 6 as part of a heterocyclic structure), phosphonate (-P(=0)(OR 7 )(OR 8 ) ), phosphate (-0-P(=0)(OR 9 )(OR 10 ) ), phosphonic acid (-P(=0)(OH) 2 ), phosphoric acid (-0-P(=0)(OH) 2 ) moiety, or their protonated or deprotonated forms, R 1 , R 2 , R 7 , R 9 is - independently from each other - alkyl, aryl, alkylaryl, or arylalkyl, R 3 , R 4 , R 5 , R 8 , R 10 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, R 6 is alkylene, or arylalkylene, R 11 , R 12 , R 13 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, and R 11 , R 12 , R 13 does not comprise any moiety (Z), R 14 is alkyl, aryl, alkylaryl, or arylalkyl, and R 14 does not comprise any moiety (Z), and (D) an aqueous medium.
摘要翻译：在化学机械抛光（CMP）组合物的存在下，包括化学机械抛光元素锗和/或Si1-xGex材料，其中0.1 = x <1的半导体器件的制造方法包括：（A）无机颗粒，有机物颗粒或其混合物或复合物，（B）至少一种类型的氧化剂，（C）至少一种类型的有机化合物，其包含至少{k}部分（Z），但不包括阴离子的盐无机且仅有机阳离子为[NR11R12R13R14] +，其中{k}为1,2或3，（Z）为羟基（-OH），烷氧基（-OR1），杂环烷氧基（-OR1为杂环的一部分结构），羧酸（-COOH），羧酸酯（-COOR 2），氨基（-NR 3 R 4），杂环氨基（作为杂环结构的一部分的-NR 3 R 4），亚氨基（= N-R 5或-N = （-O-R（OR = O）（OR 8）（OR 8）），磷酸（-O-P（= O）），膦酸（-P（= ）（OH）2），磷酸（-O-P（= O）（OH）2）部分或其质子化或去质子化形式，R 1，R 2，R 7，R 9彼此独立地为烷基，芳基，烷基芳基或芳基烷基，R 3，R 4，R 5，R 8，R 10彼此独立地为H，烷基，芳基，烷基芳基或芳烷基，R 6为亚烷基或芳基亚烷基，R 11，R 12，R 13为彼此独立的 - 烷基，芳基，烷基芳基或芳烷基，并且R 11，R 12，R 13不包含任何部分（Z），R 14是烷基，芳基，烷基芳基或芳基烷基，并且R 14不包含任何部分（Z），和（D）水性介质。

9. 发明申请

WO2011064734A1 PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开
标题翻译：从基板上移除大块材料层的方法和适用于本工艺的化学机械抛光剂
公开(公告)号：WO2011064734A1
公开(公告)日：2011-06-03
申请号：PCT/IB2010/055426
申请日：2010-11-25
申请人： BASF SE , RAMAN, Vijay Immanuel , EBERT, Sophia , BRANDS, Mario , LAN, Yongqing , ZACHARIAS, Philipp , GUBAYDULLIN, Ilshat , LI, Yuzhuo , BASF (CHINA) COMPANY LIMITED
发明人： RAMAN, Vijay Immanuel , EBERT, Sophia , BRANDS, Mario , LAN, Yongqing , ZACHARIAS, Philipp , GUBAYDULLIN, Ilshat , LI, Yuzhuo
IPC分类号： H01L21/463 , C09G1/02
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1 ) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, - an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.
摘要翻译：（1）提供在化学机械抛光结束时显示的CMP试剂，而不添加补充材料，与其开始时相同的SER的方法，用于从基底去除体材料层并通过CMP平坦化暴露表面的方法和比开始时更低的MRR， - 低于初始SER的SER，和与初始MRR相同或基本相同的MRR，或比开始时更低的SER和较低的MRR; （2）使本体材料层的表面与CMP剂接触; （3）散装材料层的CMP与CMP剂; 和（4）继续CMP，直到从暴露表面去除所有材料残留物; 和CMP剂及其用于制造电气和光学器件的用途。

10. 发明申请

WO2011104639A1 ABRASIVE ARTICLES, METHOD FOR THEIR PREPARATION AND METHOD OF THEIR USE 审中-公开
标题翻译：磨料制品及其制备方法及其使用方法
公开(公告)号：WO2011104639A1
公开(公告)日：2011-09-01
申请号：PCT/IB2011/050236
申请日：2011-01-19
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , KUJAT, Christof , LI, Yuzhuo , RUSHING, Kenneth
发明人： KUJAT, Christof , LI, Yuzhuo , RUSHING, Kenneth
IPC分类号： C09K3/14
CPC分类号： C09K3/1436 , B24B37/245 , B24D11/001 , H01L21/3212
摘要： Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (al) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.
摘要翻译：含有选自无机颗粒，有机颗粒和无机 - 有机杂化颗粒（a1）的固体研磨颗粒（A）的磨料制品，其通过激光衍射确定具有1至500nm的平均一次粒径，并具有电子提供化学键合到其表面的供体组（a2）。所述固体磨料颗粒（A）分布在固体基质（B）的整个上方或整个或整个固体基体（B）的顶部。提供了制造磨料制品的方法和用于处理可用于制造电气和光学装置的衬底的方法。所述方法利用所述磨料制品。

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