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    • 3. 发明申请
    • PARTICULATE PREVENTION IN ION IMPLANTATION
    • 离子注入中的颗粒预防
    • WO2006133038A3
    • 2007-02-01
    • PCT/US2006021643
    • 2006-06-02
    • AXCELIS TECH INCVANDERPOT JOHNBERRIAN DONALD
    • VANDERPOT JOHNBERRIAN DONALD
    • H01J37/317H01J37/08H01J37/304
    • H01J37/244H01J37/045H01J37/09H01J37/302H01J37/3171H01J2237/022H01J2237/026H01J2237/028H01J2237/30433H01J2237/31705
    • A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source (200), a power supply (216) operable to supply power to a filament (214) and mirror electrode (218) of the ion source, a workpiece handling system, and a controller (228), wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.
    • 提供了一种减轻离子注入系统污染的系统和方法。 该系统包括离子源(200),可操作以向离子源的细丝(214)和镜电极(218)供电的电源(216),工件处理系统和控制器(228),其中 离子源可以经由控制器选择性地调节,以提供对离子束形成的快速控制。 控制器可操作以选择性地快速地控制离子源的功率,其中至少部分地基于与工件相关联的信号,在小于约20微秒内在注入功率和最小功率之间调制离子束的功率 位置。 因此,离子源的控制因此通过使离子束处于注入电流的时间量最小化来减轻离子注入系统中的颗粒污染。