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    • 1. 发明申请
    • RECIPROCATING DRIVE SYSTEM FOR SCANNING A WORKPIECE
    • 用于扫描工作的再现驱动系统
    • WO2005099072A1
    • 2005-10-20
    • PCT/US2005/011600
    • 2005-04-05
    • AXCELIS TECHNOLOGIES, INC.VANDERPOT, JohnPOLLACK, JohnBERRIAN, Donald
    • VANDERPOT, JohnPOLLACK, JohnBERRIAN, Donald
    • H02K16/00
    • H01L21/67069H01J2237/20228H01J2237/31701H01L21/68707
    • A reciprocating drive system, method, and apparatus for scanning a workpiece are provided, wherein a motor comprising a rotor and stator operable to individually rotate about a first axis is operable to reciprocally translate the workpiece with respect to a stationary reference. A shaft rotatably driven by the rotor extends along the first axis, and a scan arm is operably coupled to the shaft, wherein the scan arm is operable to support the workpiece thereon. Cyclical counter rotations of the shaft by the motor are operable to rotate the scan arm, therein scanning the workpiece through the ion beam along a first scan path, wherein the stator acts as a reaction mass to the rotation of the rotor. A controller is further operable to control an electromagnetic force between the rotor and the stator, therein generally determining a rotational position of the rotor and the stator.
    • 提供了一种用于扫描工件的往复驱动系统,方法和装置,其中包括可操作以围绕第一轴线单独旋转的转子和定子的马达可操作以相对于固定基准往复平移工件。 由转子可旋转地驱动的轴沿着第一轴线延伸,并且扫描臂可操作地联接到轴,其中扫描臂可操作以在其上支撑工件。 电动机的轴的周期性旋转可操作以旋转扫描臂,其中沿着第一扫描路径扫描工件穿过离子束,其中定子充当转子的旋转的反作用质量。 控制器还可操作以控制转子和定子之间的电磁力,其中通常确定转子和定子的旋转位置。
    • 2. 发明申请
    • PARTICULATE PREVENTION IN ION IMPLANTATION
    • 离子注入中的颗粒预防
    • WO2006133038A3
    • 2007-02-01
    • PCT/US2006021643
    • 2006-06-02
    • AXCELIS TECH INCVANDERPOT JOHNBERRIAN DONALD
    • VANDERPOT JOHNBERRIAN DONALD
    • H01J37/317H01J37/08H01J37/304
    • H01J37/244H01J37/045H01J37/09H01J37/302H01J37/3171H01J2237/022H01J2237/026H01J2237/028H01J2237/30433H01J2237/31705
    • A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source (200), a power supply (216) operable to supply power to a filament (214) and mirror electrode (218) of the ion source, a workpiece handling system, and a controller (228), wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.
    • 提供了一种减轻离子注入系统污染的系统和方法。 该系统包括离子源(200),可操作以向离子源的细丝(214)和镜电极(218)供电的电源(216),工件处理系统和控制器(228),其中 离子源可以经由控制器选择性地调节,以提供对离子束形成的快速控制。 控制器可操作以选择性地快速地控制离子源的功率,其中至少部分地基于与工件相关联的信号,在小于约20微秒内在注入功率和最小功率之间调制离子束的功率 位置。 因此,离子源的控制因此通过使离子束处于注入电流的时间量最小化来减轻离子注入系统中的颗粒污染。
    • 3. 发明申请
    • METHOD FOR RECIPROCATING A WORKPIECE THROUGH AN ION BEAM
    • 通过离子束重新加工工件的方法
    • WO2005097640A2
    • 2005-10-20
    • PCT/US2005/011581
    • 2005-04-05
    • AXCELIS TECHNOLOGIES, INC.POLLACK, JohnBERRIAN, DonaldVANDERPOT, John
    • VANDERPOT, John
    • B65H1/00
    • H01J37/20H01J37/3171H01J2237/0216H01J2237/20228H01J2237/20292H01J2237/31703H01L21/67069H01L21/67259H01L21/68764H01L21/68792
    • A method for reciprocally transporting a workpiece on a scan arm through an ion beam is provided, wherein the scan arm is operable coupled to a motor comprising a rotor and stator that are individually rotatable about a first axis. An electromagnetic force applied between the rotor and stator rotates the rotor about the first axis and translates the workpiece through the ion beam along a first scan path. A position of the workpiece is sensed and the electromagnetic force between the rotor and stator is controlled in order to reverse the direction of motion of the workpiece along the first scan path, and wherein the control is based, at least in part, on the sensed position of the workpiece. The stator further rotates about the first axis in reaction to the rotation of the rotor, particularly in the reversal of direction of motion of the workpiece, thus acting as a reaction mass to the rotation of one or more of the rotor, scan arm, and workpiece.
    • 提供一种用于通过离子束在扫描臂上相互传送工件的方法,其中扫描臂可操作地联接到包括转子和定子的电机,所述电机可独立地围绕第一轴线旋转。 施加在转子和定子之间的电磁力使转子围绕第一轴旋转并且使工件沿着第一扫描路径平移通过离子束。 感测工件的位置并且控制转子与定子之间的电磁力以便沿着第一扫描路径反转工件的运动方向,并且其中控制至少部分地基于感测的 工件的位置。 定子进一步围绕第一轴线旋转,以响应转子的旋转,特别是在工件的运动方向的反转中,因此用作对转子,扫描臂和旋转臂中的一个或多个的旋转的反作用物质。 工件
    • 5. 发明申请
    • TITANIUM-BASED FILMS FORMED BY CHEMICAL VAPOR DEPOSITION
    • 通过化学蒸气沉积形成的基于钛的薄膜
    • WO1997005298A1
    • 1997-02-13
    • PCT/US1996012589
    • 1996-07-31
    • MULTILEVEL METALS, INC.KAIM, RobertVANDERPOT, John, W.
    • MULTILEVEL METALS, INC.
    • C23C16/34
    • H01L21/76862C23C16/14C23C16/34C23C16/42H01L21/76841H01L21/76843
    • A gaseous mixture of a titanium halide and silane is introduced to a plasma or thermal CVD reactor to induce a reaction such that a conformal and pure titanium film is deposided onto a semiconductor device within the reactor. The titanium halide has a chemical form of TiX4, where X is a halogen. Other gaseous mixtures of the titanium halide and silane are subjected to plasma or thermal CVD to induce a reaction to deposit titanium silicide films onto the semiconductor device. Hydrogen is sometimes added to the gaseous mixture as a reactant to reduce the silicon content in the resulting titanium silicide layer. Other gaseous combinations of the titanium halide, ammonia, hydrogen, a halogen and silane are subjected to plasma or thermal CVD to induce a reaction to deposit titanium silicide and titanium nitride films onto the semiconductor device. Successive CVD processes create bilayers of TiSix/TiN or Ti/TiN, and/or trilayers of TiSix/Ti/TiN onto the semiconductor device. The invention also includes processes and systems for depositing a titanium-based semiconductor film onto a workpiece surface. A gaseous flow is created and includes a titanium tetrahalide and a hydrogen-bearing gas that is reactive with the titanium halide. This flow is transformed through chemical vapor deposition to deposit the titanium-based film onto the surface. To anneal, the titanium halide is inhibited from the flow so as to remove residual halogen atoms from the surface. The invention provides for annealing of Ti, TiN films, as well as bilayers such as Ti/TiSi2. Plasma and/or thermal CVD are used.
    • 将钛卤化物和硅烷的气体混合物引入等离子体或热CVD反应器以引起反应,使得保形和纯钛膜沉积在反应器内的半导体器件上。 钛卤化物具有化学形式的TiX4,其中X是卤素。 将卤化钛和硅烷的其它气体混合物进行等离子体或热CVD以引起将硅化钛膜沉积到半导体器件上的反应。 有时将氢气作为反应物加入到气态混合物中以降低所得钛硅化物层中的硅含量。 将卤化钛,氨,氢,卤素和硅烷的其它气体组合进行等离子体或热CVD以引起将硅化钛和氮化钛膜沉积到半导体器件上的反应。 连续CVD工艺将TiSix / TiN或Ti / TiN的双层和/或TiSix / Ti / TiN的三层制造到半导体器件上。 本发明还包括将钛基半导体膜沉积到工件表面上的工艺和系统。 产生气流并且包括四卤化钛和与卤化钛反应的含氢气体。 该流动通过化学气相沉积转化,以将钛基膜沉积在表面上。 为了退火,卤化钛从流动中被抑制,从而从表面去除残留的卤素原子。 本发明提供Ti,TiN膜以及Ti / TiSi 2等双层的退火。 使用等离子体和/或热CVD。