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1. 发明申请

WO2005073429A3 METHOD AND APPARATUS FOR SELECTIVELY CHANGING THIN FILM COMPOSITION DURING ELECTROLESS DEPOSITION IN A SINGLE CHAMBER 审中-公开
标题翻译：在一个单室中电沉积期间选择性地改变薄膜组合物的方法和装置
公开(公告)号：WO2005073429A3
公开(公告)日：2006-06-01
申请号：PCT/US2005002284
申请日：2005-01-25
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , PANCHAM IAN , LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , SHACHAM-DIAMAND YOSEF , MOGHADAM FARHAD
发明人： WEIDMAN TIMOTHY W , PANCHAM IAN , LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , SHACHAM-DIAMAND YOSEF , MOGHADAM FARHAD
IPC分类号： C23C18/16 , C23C18/50 , H01L21/02 , H01L21/288 , H01L21/768
CPC分类号： C23C18/1683 , C23C18/1619 , C23C18/1651 , C23C18/50 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76874 , Y10T428/12
摘要： A method and apparatus for electrolessly depositing a multilayer film using a processing solution(s) to clean and then electrolessly deposit a metal film having discrete or varying composition onto a conductive surface using a single processing cell. The process includes an in-situ cleaning step to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen between the cleaning and electroless deposition process steps. In one aspect, the chemical components used in the processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids. The continuous electroless deposition process may be used to form a first layer containing at least two of the following elements cobalt, tungsten, phosphorus or boron; and a second layer contains at least two of the following elements cobalt, boron or phosphorus.
摘要翻译：一种使用处理溶液无电沉积多层膜的方法和装置，以使用单个处理池清洁然后将具有离散或变化组成的金属膜无电沉积到导电表面上。该方法包括通过最小化或防止在清洁和无电沉积工艺步骤之间将导电表面暴露于氧气来最小化导电表面上的氧化物形成的原位清洁步骤。在一个方面，选择在处理溶液中使用的化学组分，使得各种化学组分的相互作用不会急剧地改变每种相互作用流体的期望性质。连续无电沉积工艺可用于形成含有至少两种以下元素钴，钨，磷或硼的第一层; 并且第二层含有钴，硼或磷中的至少两种元素。

2. 发明申请

WO9941423A2 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS 审中-公开
标题翻译：用于沉积低介电常数膜的等离子体处理
公开(公告)号：WO9941423A2
公开(公告)日：1999-08-19
申请号：PCT/US9902903
申请日：1999-02-10
申请人： APPLIED MATERIALS INC
发明人： CHEUNG DAVID , YAU WAI-FAN , MANDAL ROBERT P , JENG SHIN-PUU , LIU KUO-WEI , LU YUNG-CHENG , BARNES MIKE , WILLECKE RALF B , MOGHADAM FARHAD , ISHIKAWA TETSUYA , POON TZE
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , C23C
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2-SiH-O-SiH-(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30 % of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它电介质层的衬垫层或覆盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3，二甲基硅烷，（CH 3）2 SiH 2，1,1,3,3-四甲基 - 二硅氧烷，（CH 3）2 -SiH-O-SiH-（CH 3）2，和一氧化二氮，N2O，在约10W至约150W的恒定RF功率水平，或占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

3. 发明申请

WO0213234A3 STABILIZED SURFACE BETWEEN A FLUOROSILICATE GLASS DIELECTRIC AND A LINER/BARRIER LAYER 审中-公开
标题翻译：氟硅酸盐玻璃介质与衬里/隔离层之间的稳定表面
公开(公告)号：WO0213234A3
公开(公告)日：2002-08-01
申请号：PCT/US0124177
申请日：2001-07-31
申请人： APPLIED MATERIALS INC
发明人： MOGHADAM FARHAD , TRIBULA DANA , M SAAD HICHEM , KRISHNA NETY M , MAITY NIRMALYA
IPC分类号： H01L21/768
CPC分类号： H01L21/76855 , H01L21/76802 , H01L21/76807 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： A method of stabilizing a fluorosilicate glass (FSG) (36, 40) used as an inter-level dielectric layer and having via or other holes (42, 44) formed therethrough for contacting an aluminium or copper metallization. The FSG layer including the hole is subjected first to a plasma of nitrogen and possibly hydrogen and then to an argon plasma. The nitrogen plasma creates a nitrogen-rich surface, which reacts with the after deposited titanium to form a thin stable TiN layer. The nitrogen plasma may be applied at relatively low power. The hydrogen plasma removes free fluorine in the FSG which can create problems with peeling. The hydrogen/nitrogen may be supplied in the form of forming gas containing less than 7 % hydrogen. The subsequent argon plasma cleans the surface, including possibly removing a nitrided aluminium surface formed by the nitrogen plasma from an aluminium metallization. The process may also be applied to a copper dual-damascene metallization. After the two plasma treatments, a liner/barrier layer, preferably of Ti/TiN for Al and Ta/TaN for Cu, is coated on the walls of the hole and over the top of the FSG layer, and a metal is deposited in the hole to fill it.
摘要翻译：一种稳定氟硅酸盐玻璃（FSG）（36,40）的方法，所述氟硅酸盐玻璃（36,40）用作层间电介质层并具有穿过其中形成的通孔或其他孔（42,44）以接触铝或铜金属化层。包含该孔的FSG层首先经受氮等离子体和可能的氢，然后经受氩等离子体。氮等离子体产生富氮表面，其与后沉积的钛反应形成薄而稳定的TiN层。氮等离子体可以以相对较低的功率施加。氢等离子去除FSG中的游离氟，这可能产生剥离问题。氢/氮可以以含有少于7％的氢的形成气体的形式供应。随后的氩等离子体清洁表面，包括可能从铝金属化层去除由氮等离子体形成的氮化铝表面。该工艺也可以应用于铜双金属镶嵌金属化。在两次等离子体处理之后，衬里/阻挡层，优选用于Al的Ti / TiN和用于Cu的Ta / TaN被涂覆在孔的壁上和FSG层的顶部上，并且金属沉积在孔来填充它。

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