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1. 发明申请

WO2013052509A3 REMOTE PLASMA BURN-IN 审中-公开
标题翻译：远程等离子体燃烧
公开(公告)号：WO2013052509A3
公开(公告)日：2013-06-13
申请号：PCT/US2012058498
申请日：2012-10-02
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , JI LILI , INGLE NITIN K
发明人： LIANG JINGMEI , JI LILI , INGLE NITIN K
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。该方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。一个新的内表面暴露在远程等离子体系统内。然后通过（1）在远程等离子体系统内由含氢前驱体形成远程等离子体，然后（2）将内表面暴露于水蒸汽，来处理（新）内表面。步骤（1） - （2）重复至少十次以完成老化过程。在处理内表面之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前驱体流过远程等离子体源并且将等离子体流出物与直接流向基板处理区域的第二前驱体组合来在基板上形成电介质膜。

2. 发明申请

WO2013052509A2 REMOTE PLASMA BURN-IN 审中-公开
标题翻译：远程等离子体燃烧
公开(公告)号：WO2013052509A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/058498
申请日：2012-10-02
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
发明人： LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。这些方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。新的内表面暴露在远程等离子体系统内。（新）内表面然后通过（1）在远程等离子体系统内从含氢前体形成远程等离子体的顺序步骤进行处理，然后（2）将内表面暴露于水蒸汽。步骤（1） - （2）重复至少十次以完成老化过程。在内表面的处理之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前体流过远程等离子体源并将等离子体流出物与直接流到衬底处理区的第二前体结合在衬底上形成电介质膜。

3. 发明申请

WO2012048041A2 AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS 审中-公开
标题翻译：胺固化硅氮化物 - 氢化物膜
公开(公告)号：WO2012048041A2
公开(公告)日：2012-04-12
申请号：PCT/US2011/054981
申请日：2011-10-05
申请人： APPLIED MATERIALS, INC. , SOLIS, Earl Osman , JI, Lili , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K.
发明人： SOLIS, Earl Osman , JI, Lili , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K.
IPC分类号： C08J7/04 , C08J5/18 , C08L83/00 , C09D183/00 , H01B3/46
CPC分类号： H01L21/02326 , C23C16/345 , C23C16/56 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.
摘要翻译：描述了形成电介质层的方法。该方法可以包括在衬底上形成含硅 - 氮 - 和 - 氢的层。该方法包括臭氧固化含硅氮和含氢层以将含硅氮和含氢层变成含硅和氧的层。在臭氧固化之后，在退火之前，该层在低温下暴露于胺 - 水组合。胺固化的存在允许在退火期间转变为含硅和氧的层更快且完全地在较低温度下发生。胺固化还使得退火能够使用较少氧化的环境来实现向含硅和氧的层的转化。

4. 发明申请

WO2012048041A3 AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS 审中-公开
标题翻译：胺固化硅 - 氮化物膜
公开(公告)号：WO2012048041A3
公开(公告)日：2012-06-28
申请号：PCT/US2011054981
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , SOLIS EARL OSMAN , JI LILI , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： SOLIS EARL OSMAN , JI LILI , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： C08J7/04 , C08J5/18 , C08L83/00 , C09D183/00 , H01B3/46
CPC分类号： H01L21/02326 , C23C16/345 , C23C16/56 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.
摘要翻译：描述形成电介质层的方法。所述方法可以包括在基底上形成含硅 - 氮和氢的层。这些方法包括将含氮 - 和氢的含氧层进行臭氧固化，以将含氮 - 和氢的层转化为含硅和氧的层。在臭氧固化之后，在退火之前将该层暴露于低温下的胺 - 水组合。胺固化的存在允许在退火期间在较低温度下转化为含硅和氧的层更快速和完全地发生。胺固化还使得退火能够使用较少的氧化环境来实现转化为含硅和氧的层。

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