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1. 发明申请

WO2010068635A3 FILLED POLYMER COMPOSITION FOR ETCH CHAMBER COMPONENT 审中-公开
标题翻译：用于蚀刻室部件的填充聚合物组合物
公开(公告)号：WO2010068635A3
公开(公告)日：2010-08-19
申请号：PCT/US2009067218
申请日：2009-12-08
申请人： APPLIED MATERIALS INC , SUN JENNIFER Y , DUAN REN-GUAN , THACH SENH , XU LI
发明人： SUN JENNIFER Y , DUAN REN-GUAN , THACH SENH , XU LI
IPC分类号： C08K3/22 , B01J19/08 , C08K3/34 , C08L101/00 , C09J11/04
CPC分类号： C09K3/10 , Y10T428/2857
摘要： A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb2O5, YF3, AlN, SiC or Si3N4 and rare earth oxides. In an embodiment, the composition is utilized as a bonding adhesive for electrostatic chuck, bonding adhesive for shower head, bonding adhesive for liner, sealing material, O-ring, or plastic component.
摘要翻译：公开了具有改善的抗等离子体性的填充聚合物组合物该组合物包含分散在聚合物基质中的颗粒填料。颗粒填料可以是Nb2O5，YF3，AlN，SiC或Si3N4和稀土氧化物。在一个实施方案中，该组合物用作静电卡盘的粘合剂，淋浴喷头的粘合剂，衬垫的粘合剂，密封材料，O形环或塑料部件。

2. 发明申请

WO2010080590A2 HIGH TEMPERATURE ELECTROSTATIC CHUCK BONDING ADHESIVE 审中-公开
标题翻译：高温静电胶粘剂粘合剂
公开(公告)号：WO2010080590A2
公开(公告)日：2010-07-15
申请号：PCT/US2009068686
申请日：2009-12-18
申请人： APPLIED MATERIALS INC , SUN JENNIFER Y , THACH SENH , DUAN REN-GUAN
发明人： SUN JENNIFER Y , THACH SENH , DUAN REN-GUAN
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： H01L21/6833 , C08K3/22 , C08K3/28 , C08K2003/2227 , C08K2003/282 , C09D183/04 , C09J11/04 , C09J183/04 , H01L21/6831 , H02N13/00 , Y10T279/23 , Y10T279/34
摘要： Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content S D3 - D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (AI2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.
摘要翻译：本文提供了用于将静电卡盘结合到基板支撑件的部件的方法和装置。在一些实施例中，用于粘合基底支撑件的部件的粘合剂可以包括其中分散有填料的硅基聚合物材料的基体。硅基聚合物材料可以是分子量小于约500ppm的低分子量（LMW）含量S D3 -D 10的聚二甲基硅氧烷（PDMS）结构。在一些实施方案中，填料可以占粘合剂层的约50至约70体积％。在一些实施例中，填料可以包括氧化铝（Al 2 O 3），氮化铝（AlN），氧化钇（Y 2 O 3）或其组合的颗粒。在一些实施方案中，填料可以包含直径为约10纳米至约10微米的颗粒。

3. 发明申请

WO2010054112A3 PLASMA RESISTANT COATINGS FOR PLASMA CHAMBER COMPONENTS 审中-公开
标题翻译：用于等离子体室部件的抗等离子体涂层
公开(公告)号：WO2010054112A3
公开(公告)日：2010-07-29
申请号：PCT/US2009063437
申请日：2009-11-05
申请人： APPLIED MATERIALS INC , SUN JENNIFER Y , HE XIAO-MING , THACH SENH
发明人： SUN JENNIFER Y , HE XIAO-MING , THACH SENH
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01J37/32477 , Y10T428/31678
摘要： Plasma resistant coating materials, plasma resistant coatings and methods of forming such coatings on hardware components. In one embodiment, hardware component is an electrostatic chuck (ESC) and the plasma resistant coating is formed on a surface of the ESC. The plasma resistant coatings are formed by methods other than thermal spraying to provide plasma resistant coatings having advantageous material properties.
摘要翻译：抗等离子涂层材料，抗等离子涂层和在硬件部件上形成这种涂层的方法。在一个实施例中，硬件部件是静电卡盘（ESC），并且抗等离子涂层形成在ESC的表面上。耐等离子体涂层是通过除热喷涂之外的方法形成的，以提供具有有利材料性质的抗等离子涂层。

4. 发明申请

WO2011100109A3 GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：具有涂层材料的气体分布式淋浴器用于半导体加工
公开(公告)号：WO2011100109A3
公开(公告)日：2011-10-27
申请号：PCT/US2011022418
申请日：2011-01-25
申请人： APPLIED MATERIALS INC , SUN JENNIFER , THACH SENH , DUAN RENGUAN , GRAVES THOMAS
发明人： SUN JENNIFER , THACH SENH , DUAN RENGUAN , GRAVES THOMAS
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01J37/3244 , C23C4/02 , C23C4/11 , C23C4/18
摘要： Described herein are exemplary methods and apparatuses for fabricating a gas distribution showerhead assembly in accordance with one embodiment. In one embodiment, a method includes providing a gas distribution plate having a first set of through-holes for delivering processing gases into a semiconductor processing chamber. The first set of through-holes is located on a backside of the plate (e.g., Aluminum substrate). The method includes spraying (e.g., plasma spraying) a coating material (e.g., Ytrria based material) onto a cleaned surface of the gas distribution plate. The method includes removing (e.g., surface grinding) a portion of the coating material from the surface to reduce a thickness of the coating material. The method includes forming (e.g., UV laser drilling, machining) a second set of through-holes in the coating material such that the through-holes are aligned with the first-set of through-holes.
摘要翻译：这里描述了根据一个实施例的用于制造气体分配喷头组件的示例性方法和装置。在一个实施例中，一种方法包括提供具有第一组通孔的气体分配板，用于将处理气体输送到半导体处理室中。第一组通孔位于板的背面（例如铝基板）上。该方法包括将涂料（例如，基于Ytrria的材料）喷雾（例如，等离子体喷涂）到气体分配板的清洁表面上。该方法包括从表面去除（例如，表面研磨）涂层材料的一部分以减少涂层材料的厚度。该方法包括在涂层材料中形成（例如UV激光钻孔，加工）第二组通孔，使得通孔与第一组通孔对齐。

5. 发明申请

WO2009108275A3 CERAMIC COATING COMPRISING YTTRIUM WHICH IS RESISTANT TO A REDUCING PLASMA 审中-公开
标题翻译：包含抗降解等离子体的钇的陶瓷涂层
公开(公告)号：WO2009108275A3
公开(公告)日：2009-11-05
申请号：PCT/US2009000949
申请日：2009-02-13
申请人： APPLIED MATERIALS INC
发明人： SUN JENNIFER Y , HE XIAOMING , COLLINS KENNETH S , GRAVES THOMAS , THACH SENH , YUAN JIE , XU LI , DUAN REN-GUAN
IPC分类号： C23C4/10 , C23C4/12
CPC分类号： C23C4/11 , Y10T428/24355 , Y10T428/24997
摘要： Particulate generation has been a problem in semiconductor device processing in highly corrosive plasma environments. The problem is exacerbated when the plasma is a reducing plasma. Empirically produced data has shown that the formation of a plasma spray coated yttrium-comprising ceramic such as yttrium oxide, Y2O3 - ZrO2 solid solution, YAG, and YF3 provides a low porosity coating with smooth and compacted surfaces when such ceramics are spray coated from a powder feed having an average effective diameter ranging from about 22µm to about 0.1 µm. These spray- coated materials reduce the generation of particulates in corrosive reducing plasma environments.
摘要翻译：在高腐蚀性等离子体环境中，微粒生成一直是半导体器件处理中的问题。当等离子体是还原性等离子体时，问题加剧。根据经验产生的数据已经表明，形成等离子体喷涂的包含钇的陶瓷，例如氧化钇，Y 2 O 3 -ZrO 2固溶体，YAG和YF 3时，提供具有光滑和压实表面的低孔隙率涂层，粉末进料具有约22μm至约0.1μm的平均有效直径。这些喷涂材料可减少腐蚀性降低等离子体环境中的微粒产生。

6. 发明申请

WO03081645A2 SYSTEM LEVEL IN-SITU INTEGRATED DIELECTRIC ETCH PROCESS PARTICULARLY USEFUL FOR COPPER DUAL DAMASCENE 审中-公开
标题翻译：系统级现场综合介质蚀刻工艺特别适用于铜双金属
公开(公告)号：WO03081645A2
公开(公告)日：2003-10-02
申请号：PCT/US0307485
申请日：2003-03-10
申请人： APPLIED MATERIALS INC
发明人： HSIEH CHANG-LIN , MA DIANA XIAOBING , SHIEH BRIAN SY YUAN , YIN GERALD ZHEYAO , SUN JENNIFER , THACH SENH , LUO LEE , BJORKMAN CLAES H
IPC分类号： H01L21/00 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76832 , H01J37/32458 , H01L21/31116 , H01L21/31138 , H01L21/67184 , H01L21/67207 , H01L21/67219 , H01L21/6723 , H01L21/76802 , H01L21/76804 , H01L21/76807
摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.
摘要翻译：在具有第一和第二蚀刻室的多室基板处理系统中执行的集成原位蚀刻工艺。在一个实施例中，第一室包括已经被粗糙化至少至少100Ra的内表面，并且第二室包括具有小于约32Ra的粗糙度的内表面。该方法包括在向下的方向上转移其上形成有图案的光致抗蚀剂掩模，电介质层，阻挡层和衬底中的特征的衬底，以接触第一室，其中介电层被刻蚀在鼓励聚合物的过程中在室的粗糙内表面上形成。然后在真空条件下将衬底从第一室转移到第二室，并且在第二室中暴露于诸如氧的反应性等离子体以剥离沉积在衬底上的光致抗蚀剂掩模。在光致抗蚀剂掩模被剥离之后，阻挡层被蚀刻到多室基板处理系统的第二室中要被接触的特征，使用阻止在第二室的相对平滑的内表面上形成聚合物的工艺。所有三个蚀刻步骤都是在系统级原位工艺中进行的，因此基板不会在台阶之间暴露于环境中。在一些实施例中，第一腔室的内表面具有在100和200Ra之间的粗糙度，并且在其它实施例中，第一腔室内表面的粗糙度在110和160Ra之间。

7. 发明申请

WO2009085117A3 EROSION RESISTANT YTTRIUM COMPRISING METAL WITH OXIDIZED COATING FOR PLASMA CHAMBER COMPONENTS 审中-公开
标题翻译：用于等离子体室组分氧化涂层的金属耐腐蚀性
公开(公告)号：WO2009085117A3
公开(公告)日：2009-09-17
申请号：PCT/US2008013589
申请日：2008-12-10
申请人： APPLIED MATERIALS INC
发明人： SUN JENNIFER Y , XU LI , COLLINS KENNETH S , GRAVES THOMAS , GUAN REN-GUAN , THACH SENH
IPC分类号： C23C14/16 , H01L21/302
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.
摘要翻译：描述了耐化学活性等离子体腐蚀或侵蚀的制品以及制造该制品的方法。该制品由金属或金属合金基材组成，其表面上具有金属或金属合金的氧化物的涂层。氧化物涂层的结构本质上是柱状的。构成氧化物的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金基底之间的界面处的晶粒尺寸大，并且其中氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。通常，金属选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。

8. 发明申请

WO2009108275A2 CERAMIC COATING COMPRISING YTTRIUM WHICH IS RESISTANT TO A REDUCING PLASMA 审中-公开
标题翻译：陶瓷涂料包含耐降解等离子体的YTTRIUM
公开(公告)号：WO2009108275A2
公开(公告)日：2009-09-03
申请号：PCT/US2009000949
申请日：2009-02-13
申请人： APPLIED MATERIALS INC
发明人： SUN JENNIFER Y , HE XIAOMING , COLLINS KENNETH S , GRAVES THOMAS , THACH SENH , YUAN JIE , XU LI , DUAN REN-GUAN
IPC分类号： C23C4/10 , C23C4/12
CPC分类号： C23C4/11 , Y10T428/24355 , Y10T428/24997
摘要： Particulate generation has been a problem in semiconductor device processing in highly corrosive plasma environments. The problem is exacerbated when the plasma is a reducing plasma. Empirically produced data has shown that the formation of a plasma spray coated yttrium-comprising ceramic such as yttrium oxide, Y2O3 - ZrO2 solid solution, YAG, and YF3 provides a low porosity coating with smooth and compacted surfaces when such ceramics are spray coated from a powder feed having an average effective diameter ranging from about 22µm to about 0.1 µm. These spray- coated materials reduce the generation of particulates in corrosive reducing plasma environments.
摘要翻译：在高度腐蚀性等离子体环境中的半导体器件加工中，微粒产生是一个问题。当等离子体是还原等离子体时，问题更加严重。经验生产的数据显示，等离子体喷涂的包含钇的钇陶瓷如氧化钇，Y2O3-ZrO2固溶体，YAG和YF3的形成提供了具有光滑和压实表面的低孔隙率涂层，当这种陶瓷从粉末进料的平均有效直径为约22μm至约0.1μm。这些喷涂材料减少了腐蚀性还原等离子体环境中的颗粒物的产生。

9. 发明申请

WO02093624A3 APPARATUS FOR REGULATING TEMPERATURE OF A PROCESS KIT IN A SEMICONDUCTOR WAFER-PROCESSING CHAMBER 审中-公开
标题翻译：用于在半导体加热室中调节工艺温度的装置
公开(公告)号：WO02093624A3
公开(公告)日：2003-01-09
申请号：PCT/US0214957
申请日：2002-05-13
申请人： APPLIED MATERIALS INC
发明人： GRIMARD DENNIS , KHOLODENKO ARNOLD , VEYTSER ALEX , THACH SENH , CHENG WING
IPC分类号： H01L21/00
CPC分类号： H01L21/67109 , H01L21/67103
摘要： Apparatus for reducing by-product formation in a semiconductor wafer-processing chambers. In a first embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange. A collar is disposed over the peripheral flange defining a gap therebetween, and circumscribes the chuck. A heater element is embedded within the collar and adapted for connection to a power source. In a second embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending periperal flange, and a collar having a heater element embedded therein. The collar is disposed over the peripheral flange to define a gap therebetween, and circumscribes the chuck. Moreover, a pedestal having a gas delivery system therein is disposed below the chuck and collar. In a third embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, a collar, and a waste ring having a heater element embedded therein. The waste ring is disposed over the peripheral flange defining a gap therebetween, and circumscribes the chuck. The collar is chucked to the waste ring, and the waste ring is chucked to a pedestal support. Moreover, the waste ring and pedestal each have a gas delivery system therein for regulating the temperature of the collar.
摘要翻译：用于减少半导体晶片处理室中副产物形成的装置。在第一实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘。套环设置在周边凸缘之上，限定了它们之间的间隙，并限制卡盘。加热器元件嵌入在轴环内并且适于连接到电源。在第二实施例中，该装置包括具有夹紧电极和径向延伸的凸缘的卡盘，以及具有嵌入其中的加热器元件的套环。套环设置在周边凸缘上方以在其间形成间隙并限制卡盘。此外，其中具有气体输送系统的基座设置在卡盘和轴环的下方。在第三实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘，套环和具有嵌入其中的加热器元件的废料环的卡盘。废环设置在周边凸缘之上，限定了它们之间的间隙，并且围绕卡盘。将衣领卡在废物环上，将废物环卡在基座支架上。此外，废环和底座各自具有用于调节套环温度的气体输送系统。

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