发明申请
WO2011100109A3 GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING
审中-公开
基本信息:
- 专利标题: GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING
- 专利标题(中):具有涂层材料的气体分布式淋浴器用于半导体加工
- 申请号:PCT/US2011022418 申请日:2011-01-25
- 公开(公告)号:WO2011100109A3 公开(公告)日:2011-10-27
- 发明人: SUN JENNIFER , THACH SENH , DUAN RENGUAN , GRAVES THOMAS
- 申请人: APPLIED MATERIALS INC , SUN JENNIFER , THACH SENH , DUAN RENGUAN , GRAVES THOMAS
- 专利权人: APPLIED MATERIALS INC,SUN JENNIFER,THACH SENH,DUAN RENGUAN,GRAVES THOMAS
- 当前专利权人: APPLIED MATERIALS INC,SUN JENNIFER,THACH SENH,DUAN RENGUAN,GRAVES THOMAS
- 优先权: US201113011839 2011-01-21; US30360910 2010-02-11
- 主分类号: H01L21/316
- IPC分类号: H01L21/316 ; H01L21/205
摘要:
Described herein are exemplary methods and apparatuses for fabricating a gas distribution showerhead assembly in accordance with one embodiment. In one embodiment, a method includes providing a gas distribution plate having a first set of through-holes for delivering processing gases into a semiconductor processing chamber. The first set of through-holes is located on a backside of the plate (e.g., Aluminum substrate). The method includes spraying (e.g., plasma spraying) a coating material (e.g., Ytrria based material) onto a cleaned surface of the gas distribution plate. The method includes removing (e.g., surface grinding) a portion of the coating material from the surface to reduce a thickness of the coating material. The method includes forming (e.g., UV laser drilling, machining) a second set of through-holes in the coating material such that the through-holes are aligned with the first-set of through-holes.
摘要(中):
这里描述了根据一个实施例的用于制造气体分配喷头组件的示例性方法和装置。 在一个实施例中,一种方法包括提供具有第一组通孔的气体分配板,用于将处理气体输送到半导体处理室中。 第一组通孔位于板的背面(例如铝基板)上。 该方法包括将涂料(例如,基于Ytrria的材料)喷雾(例如,等离子体喷涂)到气体分配板的清洁表面上。 该方法包括从表面去除(例如,表面研磨)涂层材料的一部分以减少涂层材料的厚度。 该方法包括在涂层材料中形成(例如UV激光钻孔,加工)第二组通孔,使得通孔与第一组通孔对齐。
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |
------------------H01L21/314 | ......无机层 |
--------------------H01L21/316 | .......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层 |