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1. 发明申请

WO2010117703A3 METHOD OF SELECTIVE NITRIDATION 审中-公开
标题翻译：选择性硝化方法
公开(公告)号：WO2010117703A3
公开(公告)日：2011-01-13
申请号：PCT/US2010028998
申请日：2010-03-29
申请人： APPLIED MATERIALS INC , OLSEN CHRISTOPHER S , SWENBERG JOHANES , GANGULY UDAYAN , GUARINI THERESA KRAMER , CHO YONAH
发明人： OLSEN CHRISTOPHER S , SWENBERG JOHANES , GANGULY UDAYAN , GUARINI THERESA KRAMER , CHO YONAH
IPC分类号： H01L21/76 , H01L21/8247 , H01L27/115
CPC分类号： H01L21/3144 , H01L21/02247 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/3211 , H01L27/11521 , Y10S438/911
摘要： Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.
摘要翻译：本文提供了形成半导体器件的方法。在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

2. 发明申请

WO2011112802A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
标题翻译：用于循环氧化和蚀刻的装置和方法
公开(公告)号：WO2011112802A3
公开(公告)日：2012-01-05
申请号：PCT/US2011027881
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , SUN SHIYU
发明人： GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , SUN SHIYU
IPC分类号： H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

3. 发明申请

WO2011112812A2 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112812A2
公开(公告)日：2011-09-15
申请号：PCT/US2011027900
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , SWENBERG JOHANES F , WANG ANCHUAN , INGLE NITIN K , HEMKAR MANISH , MARIN JOSE A
发明人： GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , SWENBERG JOHANES F , WANG ANCHUAN , INGLE NITIN K , HEMKAR MANISH , MARIN JOSE A
IPC分类号： H01L21/3065
CPC分类号： H01L21/67115 , H01L21/0223 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

4. 发明申请

WO2011112823A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112823A3
公开(公告)日：2012-01-05
申请号：PCT/US2011027922
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , YOKOTA YOSHITAKA , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , MARIN JOSE A , BALAKRISHNA AJIT , NEWMAN JACOB , HICKERSON STEPHEN C
发明人： GANGULY UDAYAN , YOKOTA YOSHITAKA , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , MARIN JOSE A , BALAKRISHNA AJIT , NEWMAN JACOB , HICKERSON STEPHEN C
IPC分类号： H01L21/3065
CPC分类号： H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

5. 发明申请

WO2009152327A3 POST OXIDATION ANNEALING OF LOW TEMPERATURE THERMAL OR PLASMA BASED OXIDATION 审中-公开
标题翻译：低温热或基于等离子体氧化的氧化后退火
公开(公告)号：WO2009152327A3
公开(公告)日：2010-02-25
申请号：PCT/US2009047035
申请日：2009-06-11
申请人： APPLIED MATERIALS INC , OLSEN CHRISTOPHER S , YOKOTA YOSHITAKA , MANI RAJESH , SWENBERG JOHANES
发明人： OLSEN CHRISTOPHER S , YOKOTA YOSHITAKA , MANI RAJESH , SWENBERG JOHANES
IPC分类号： H01L21/31 , H01L21/324
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02337 , H01L21/28247 , H01L21/28273 , H01L21/28282 , H01L29/517
摘要： Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.
摘要翻译：本发明的实施例提供了在半导体衬底上形成氧化物层的方法。在一些实施例中，在半导体衬底上形成氧化物层的方法包括：在第一温度低于约800摄氏度的氧化工艺中，使用具有第一工艺气体的氧化工艺在衬底上形成氧化物层; 以及在第二工艺气体的存在下和在第二温度下对形成在衬底上的氧化物层进行退火。氧化过程可以是在约800摄氏度或更低的温度下进行的等离子体或热氧化过程。在一些实施例中，后氧化退火工艺可以是在至少约700摄氏度，至少约800摄氏度或至少约800摄氏度的温度下执行的尖峰或浸泡快速热处理，激光退火或闪光退火 950摄氏度。

6. 发明申请

WO2010088348A3 METHODS FOR FORMING CONFORMAL OXIDE LAYERS ON SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件上形成共形氧化物层的方法
公开(公告)号：WO2010088348A3
公开(公告)日：2010-11-25
申请号：PCT/US2010022353
申请日：2010-01-28
申请人： APPLIED MATERIALS INC , TJANDRA AGUS S , OLSEN CHRISTOPHER S , SWENBERG JOHANES F , YOKOTA YOSHITAKA
发明人： TJANDRA AGUS S , OLSEN CHRISTOPHER S , SWENBERG JOHANES F , YOKOTA YOSHITAKA
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译：公开了用于在半导体衬底上形成氧化物层的方法和装置。在一个或多个实施例中，通过在低于约100℃的温度下控制半导体衬底的温度，使用等离子体氧化来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底温度的方法包括利用静电卡盘以及冷却剂和气体对流。

7. 发明申请

WO2011008456A2 METHODS OF FORMING OXIDE LAYERS ON SUBSTRATES 审中-公开
标题翻译：在衬底上形成氧化层的方法
公开(公告)号：WO2011008456A2
公开(公告)日：2011-01-20
申请号：PCT/US2010039753
申请日：2010-06-24
申请人： APPLIED MATERIALS INC , YOKOTA YOSHITAKA , OLSEN CHRISTOPHER S , TJANDRA AGUS SOFIAN , CHO YONAH , ROGERS MATTHEW S
发明人： YOKOTA YOSHITAKA , OLSEN CHRISTOPHER S , TJANDRA AGUS SOFIAN , CHO YONAH , ROGERS MATTHEW S
IPC分类号： H01L21/316 , H01L21/205 , H01L21/31
CPC分类号： H01L21/3105
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.
摘要翻译：本文提供了用于处理基材的方法。在一些实施例中，一种用于处理衬底的方法包括提供其上设置有氧化物层的衬底，所述氧化物层包括一个或多个缺陷; 以及将氧化物层暴露于由包含含氧气体的处理气体形成的等离子体以修复一个或多个缺陷。在一些实施例中，氧化物层可以形成在衬底上。在一些实施例中，形成氧化物层还包括在衬底上沉积氧化物层。在一些实施例中，形成氧化物层还包括热氧化衬底的表面以形成氧化物层。在一些实施例中，在表面的热氧化期间处理温度保持在约700摄氏度或更低。

8. 发明申请

WO2010033378A2 METHOD AND APPARATUS FOR METAL SILICIDE FORMATION 审中-公开
标题翻译：用于金属硅化物形成的方法和设备
公开(公告)号：WO2010033378A2
公开(公告)日：2010-03-25
申请号：PCT/US2009055672
申请日：2009-09-02
申请人： APPLIED MATERIALS INC , OLSEN CHRISTOPHER S
发明人： OLSEN CHRISTOPHER S
IPC分类号： H01L21/336 , H01L21/324
CPC分类号： H01L21/2855 , H01L21/28052 , H01L21/28556 , H01L29/4933 , H01L29/78
摘要： Embodiments described herein include methods of forming metal silicide layers using a diffusionless annealing process. In one embodiment a method for forming a metal silicide material on a substrate is provided. The method comprises depositing a metal material over a silicon containing surface of a substrate, depositing a metal nitride material over the metal material, depositing a metallic contact material over the metal nitride material, and exposing the substrate to a diffusionless annealing process to form a metal silicide material. The short time-frame of the diffusionless annealing process reduces the time for the diffusion of nitrogen to the silicon containing interface to form silicon nitride thus minimizing the interfacial resistance.
摘要翻译：这里描述的实施例包括使用无扩散退火工艺形成金属硅化物层的方法。在一个实施例中，提供了一种用于在衬底上形成金属硅化物材料的方法。该方法包括在衬底的含硅表面上沉积金属材料，在金属材料上沉积金属氮化物材料，在金属氮化物材料上沉积金属接触材料，并将该衬底暴露于无扩散退火工艺以形成金属硅化物材料。无扩散退火工艺的短时间框架减少了氮扩散到含硅界面以形成氮化硅的时间，从而使界面电阻最小化。

9. 发明申请

WO2007001709A3 IMPROVED MANUFACTURING METHOD FOR TWO-STEP POST NITRIDATION ANNEALING OF PLASMA NITRIDED GATE DIELECTRIC 审中-公开
标题翻译：改进的等离子氮化栅介质二次氮化退火制造方法
公开(公告)号：WO2007001709A3
公开(公告)日：2007-11-29
申请号：PCT/US2006020508
申请日：2006-05-26
申请人： APPLIED MATERIALS INC , OLSEN CHRISTOPHER S
发明人： OLSEN CHRISTOPHER S
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/3145 , H01L29/518
摘要： A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first ambient comprises an inert ambient with a first partial pressure of oxygen at a first temperature. The silicon oxynitride film is then annealed in a second ambient comprising a second partial pressure of oxygen at a second temperature. The second partial pressure of oxygen is greater than the first partial pressure of oxygen.
摘要翻译：一种形成氮氧化硅栅极电介质的方法。该方法包括使用等离子体氮化工艺将氮掺入电介质膜中以形成氧氮化硅膜。氮氧化硅膜在第一环境中退火。第一环境包括在第一温度下具有第一氧分压的惰性环境。然后氧氮化硅膜在第二温度下在包括第二氧分压的第二环境中退火。氧的第二分压大于氧的第一分压。

10. 发明申请

WO2010091247A3 NEGATIVELY CHARGED PASSIVATION LAYER IN A PHOTOVOLTAIC CELL 审中-公开
标题翻译：在光伏电池中有害地充电钝化层
公开(公告)号：WO2010091247A3
公开(公告)日：2010-12-02
申请号：PCT/US2010023311
申请日：2010-02-05
申请人： APPLIED MATERIALS INC , BORDEN PETER G , OLSEN CHRISTOPHER S
发明人： BORDEN PETER G , OLSEN CHRISTOPHER S
IPC分类号： H01L31/042
CPC分类号： H01L31/02167 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention are directed to methods and apparatus for processing of a solar substrate for making a photovoltaic device. In particular, methods and apparatus for creating a negatively charged passivation layer by are provided.
摘要翻译：本发明的实施例涉及用于处理制造光伏器件的太阳能基板的方法和设备。具体而言，提供了用于产生带负电的钝化层的方法和设备。

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