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    • 2. 发明申请
    • SURFACE STABILIZATION PROCESS TO REDUCE DOPANT DIFFUSION
    • 表面稳定过程减少痰液扩散
    • WO2013043605A1
    • 2013-03-28
    • PCT/US2012/055924
    • 2012-09-18
    • APPLIED MATERIALS, INC.ROGERS, Matthew S.HILKENE, Martin A.
    • ROGERS, Matthew S.HILKENE, Martin A.
    • H01L21/22H01L21/324H01L21/8247H01L27/115
    • H01L21/28273H01J37/32357H01L21/3211H01L21/32155H01L21/324H01L27/11521
    • A method for incorporating radicals of a plasma into a substrate or a material on a semiconductor substrate using a remote plasma source. In one embodiment, a method for processing doped materials on a substrate surface is provided and includes forming a doped layer on a substrate and optionally cleaning the doped layer, such as by a wet clean process. The method also includes generating an ionized nitrogen plasma in a remote plasma source, wherein the ionized nitrogen plasma has an ion concentration within a range from about 0.001% to about 0.1%, de-ionizing the ionized nitrogen plasma while forming non-ionized nitrogen plasma. The method further includes flowing the non-ionized nitrogen plasma into a processing region within a processing chamber, forming a nitrided capping layer from an upper portion of the doped layer by exposing the doped layer within the processing region to the non-ionized nitrogen plasma during a stabilization process.
    • 一种使用远程等离子体源将等离子体的自由基引入衬底或半导体衬底上的材料的方法。 在一个实施例中,提供了用于在衬底表面上处理掺杂材料的方法,并且包括在衬底上形成掺杂层并且可选地例如通过湿式清洁工艺清洁掺杂层。 该方法还包括在远程等离子体源中产生电离氮等离子体,其中离子化的氮等离子体的离子浓度在约0.001%至约0.1%的范围内,使离子化的氮等离子体离子化,同时形成非离子化的氮等离子体 。 该方法还包括将非电离氮等离子体流入处理室内的处理区域,通过将处理区域内的掺杂层暴露于非电离氮等离子体,从而从掺杂层的上部形成氮化覆盖层 一个稳定的过程。