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1. 发明申请

WO2010019283A3 METHOD FOR MEASURING DOPANT CONCENTRATION DURING PLASMA ION IMPLANTATION 审中-公开
标题翻译：在等离子体植入过程中测量痰浓度的方法
公开(公告)号：WO2010019283A3
公开(公告)日：2010-05-14
申请号：PCT/US2009034995
申请日：2009-02-24
申请人： APPLIED MATERIALS INC , FOAD MAJEED A , LI SHIJIAN
发明人： FOAD MAJEED A , LI SHIJIAN
IPC分类号： H01L21/66 , H01L21/265
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

2. 发明申请

WO2007021520A2 METHODS AND SYSTEMS FOR INCREASING SUBSTRATE TEMPERATURE IN PLASMA REACTORS 审中-公开
标题翻译：在等离子体反应器中增加基板温度的方法和系统
公开(公告)号：WO2007021520A2
公开(公告)日：2007-02-22
申请号：PCT/US2006029753
申请日：2006-07-28
申请人： APPLIED MATERIALS INC , LI SHIJIAN , LU SIQING , CHOU IRENE , LEE YOUNG S , ISHIKAWA TETSUYA
发明人： LI SHIJIAN , LU SIQING , CHOU IRENE , LEE YOUNG S , ISHIKAWA TETSUYA
IPC分类号： H01J37/32 , C23C14/50 , C23C16/458 , H01L21/02 , H01L21/683
CPC分类号： C23C16/4581 , C23C16/505 , H01J37/321 , H01J37/32706 , H01J2237/2001 , H01J2237/3321 , H01L21/67069 , H01L21/67248 , H01L21/68742 , H01L21/6875 , H01L21/68757
摘要： A substrate processing system is provided. A housing defines a processing chamber. A plasma-generating system is operatively coupled to the processing chamber. A substrate support member is disposed within the processing chamber and configured to hold a substrate during substrate processing. A ceramic insert is disposed over the substrate support member such that the ceramic insert is disposed between the substrate support member and the substrate during substrate processing. A gas-delivery system is configured to introduce gases into the processing chamber. A controller controls the plasma-generating system and the gas-delivery system.
摘要翻译：提供了基板处理系统。壳体限定处理室。等离子体产生系统可操作地耦合到处理室。衬底支撑构件设置在处理室内并且构造成在衬底处理期间保持衬底。陶瓷插入件设置在衬底支撑构件上方，使得陶瓷插入件在衬底处理期间设置在衬底支撑构件和衬底之间。气体输送系统构造成将气体引入处理室。控制器控制等离子体产生系统和气体输送系统。

3. 发明申请

WO2006053096A2 HIGH SELECTIVITY SLURRY COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：高选择性浆料组合物用于化学机械抛光
公开(公告)号：WO2006053096A2
公开(公告)日：2006-05-18
申请号：PCT/US2005040673
申请日：2005-11-07
申请人： APPLIED MATERIALS INC , LEE CHRISTOPHER HEUNG-GYUN , BONNER BENJAMIN A , IYER ANAND N , NGUYEN OLIVIER THANH , CHUA DONALD KIM AUN , LI SHIJIAN
发明人： LEE CHRISTOPHER HEUNG-GYUN , BONNER BENJAMIN A , IYER ANAND N , NGUYEN OLIVIER THANH , CHUA DONALD KIM AUN , LI SHIJIAN
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.
摘要翻译：化学机械抛光组合物，其包含小于约1重量％研磨剂，添加剂和水，其中添加剂的重量百分比大于研磨剂的重量百分比。此外，在浅沟槽隔离工艺中抛光半导体衬底的方法，该方法包括使衬底与抛光装置的抛光垫接触，同时向抛光垫施加高选择性浆料，其中浆料包含小于约1％重量。研磨剂，添加剂和水，并且其中添加剂的重量百分比大于研磨剂的重量百分比。另外，制备化学机械抛光浆料组合物的方法，该方法包括将研磨剂，添加剂和水相结合以形成浆料，其中添加剂的重量百分比大于磨料的重量百分数，并且研磨剂和添加剂一起包含小于2重量％。的浆料。

4. 发明申请

WO2010027950A4 METHODS AND SOLUTIONS FOR PREVENTING THE FORMATION OF METAL PARTICULATE DEFECT MATTER UPON A SUBSTRATE AFTER A PLATING PROCESS 审中-公开
标题翻译：预防镀覆后基底上金属颗粒缺陷形成的方法和解决方案
公开(公告)号：WO2010027950A4
公开(公告)日：2010-08-05
申请号：PCT/US2009055572
申请日：2009-09-01
申请人： LAM RES , LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
发明人： LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
IPC分类号： C23C18/16 , C23C18/18 , C23C18/54
CPC分类号： C23C18/50 , C23C18/1689 , C25D5/48
摘要： Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after plating processes are provided. In particular, solutions are provided which are free of oxidizing agents and include a non-metal pH adjusting agent in sufficient concentration such that the solution has a pH between approximately 7.5 and approximately 12.0. In some cases, a solution may include a chelating agent. In addition or alternatively, a solution may include at least two different types of complexing agents each offering a single point of attachment for binding metal ions via respectively different functional groups. In any case, at least one of the complexing agents or the chelating agent includes a non-amine or non-imine functional group. An embodiment of a method for processing a substrate includes plating a metal layer upon the substrate and subsequently exposing the substrate to a solution comprising the aforementioned make-up.
摘要翻译：提供了用于防止在电镀工艺之后在衬底上形成金属颗粒缺陷物质的方法和解决方案。具体而言，提供不含氧化剂的溶液，并且包含足够浓度的非金属pH调节剂，使得溶液的pH在约7.5至约12.0之间。在一些情况下，溶液可以包含螯合剂。另外或可选地，溶液可以包括至少两种不同类型的络合剂，每种络合剂提供通过各自不同的官能团结合金属离子的单一连接点。在任何情况下，络合剂或螯合剂中的至少一种包括非胺或非亚胺官能团。用于处理衬底的方法的实施例包括在衬底上电镀金属层并随后将衬底暴露于包含前述化妆品的溶液。

5. 发明申请

WO2010027950A3 METHODS AND SOLUTIONS FOR PREVENTING THE FORMATION OF METAL PARTICULATE DEFECT MATTER UPON A SUBSTRATE AFTER A PLATING PROCESS 审中-公开
标题翻译：用于防止在镀层工艺后形成基底的金属颗粒缺陷问题的方法和解决方案
公开(公告)号：WO2010027950A3
公开(公告)日：2010-06-17
申请号：PCT/US2009055572
申请日：2009-09-01
申请人： LAM RES , LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
发明人： LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
IPC分类号： C23C18/16 , C23C18/18 , C23C18/54
CPC分类号： C23C18/50 , C23C18/1689 , C25D5/48
摘要： Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after plating processes are provided. In particular, solutions are provided which are free of oxidizing agents and include a non-metal pH adjusting agent in sufficient concentration such that the solution has a pH between approximately 7.5 and approximately 12.0. In some cases, a solution may include a chelating agent. In addition or alternatively, a solution may include at least two different types of complexing agents each offering a single point of attachment for binding metal ions via respectively different functional groups. In any case, at least one of the complexing agents or the chelating agent includes a non-amine or non-imine functional group. An embodiment of a method for processing a substrate includes plating a metal layer upon the substrate and subsequently exposing the substrate to a solution comprising the aforementioned make-up.
摘要翻译：提供了用于防止在电镀工艺之后在基板上形成金属颗粒缺陷物质的方法和解决方案。特别地，提供了不含氧化剂的溶液，并且包括足够浓度的非金属pH调节剂，使得溶液的pH在约7.5至约12.0之间。在一些情况下，溶液可以包括螯合剂。另外或替代地，溶液可以包括至少两种不同类型的络合剂，其各自提供用于通过分别不同的官能团结合金属离子的单个附着点。在任何情况下，至少一种络合剂或螯合剂包括非胺或非亚胺官能团。用于处理衬底的方法的实施例包括将金属层电镀在衬底上，随后将衬底暴露于包含上述组成的溶液中。

6. 发明申请

WO2009086231A3 POST-DEPOSITION CLEANING METHODS AND FORMULATIONS FOR SUBSTRATES WITH CAP LAYERS 审中-公开
标题翻译：沉积后清洁方法和具有覆盖层的基材的配方
公开(公告)号：WO2009086231A3
公开(公告)日：2009-08-27
申请号：PCT/US2008087878
申请日：2008-12-20
申请人： LAM RES CORP , KOLICS ARTUR , LI SHIJIAN , ARUNAGIRI TIRUCHIRAPALLI , THIE WILLIAM
发明人： KOLICS ARTUR , LI SHIJIAN , ARUNAGIRI TIRUCHIRAPALLI , THIE WILLIAM
IPC分类号： H01L21/302 , H01L21/306
CPC分类号： H05K3/0085 , C11D7/3209 , C11D11/0047 , H01L21/02068 , H01L21/76849 , H01L21/76861
摘要： One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.
摘要翻译：本发明的一个实施例是一种制造集成电路的方法。该方法包括提供具有金属和电介质镶嵌金属化层的衬底并且基本上在金属上沉积帽。在盖子沉积之后，用包含胺的溶液清洁衬底以提供7至约13的清洁溶液的pH。本发明的另一个实施例是清洁衬底的方法。本发明的又一个实施方案是用于清洁溶液的配制剂。

7. 发明申请

WO0220682A3 METHOD OF INITIATING COPPER CMP PROCESS 审中-公开
标题翻译：启动铜CMP过程的方法
公开(公告)号：WO0220682A3
公开(公告)日：2002-05-30
申请号：PCT/US0126496
申请日：2001-08-24
申请人： APPLIED MATERIALS INC
发明人： SUN LIZHONG , TSAI STAN , LI SHIJIAN , WHITE JOHN
IPC分类号： C09G1/02
CPC分类号： C09G1/02
摘要： The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water. In another embodiment, it is formed by adding a solution containing the copper (II) compound in deionized water to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.
摘要翻译：本发明提供了用于平面化铜的化学机械抛光组合物以及使用该组合物平坦化或开始平坦化铜的方法。该化学机械抛光组合物包含氧化剂和铜（II）化合物。该组合物任选地包括一种或多种下列化合物类型：络合剂; 腐蚀抑制剂; 酸; 和研磨剂。在一个实施方案中，氧化剂是过氧化氢，硝酸铁或碘酸盐。在另一个实施方案中，铜（II）化合物是CuSO 4。化学机械抛光方法包括使用包含氧化剂和铜（II）化合物的组合物抛光铜层的步骤。该组合物以各种方式形成。在一个实施方案中，其通过将铜（II）化合物添加到含有氧化剂的溶液中以及任何包含的任选化合物类型的去离子水中来形成。在另一个实施方案中，其通过将含有去离子水中的铜（II）化合物的溶液添加到含有氧化剂的溶液中以及任何包含的任选化合物类型的去离子水中来形成。

8. 发明申请

WO02055259A3 TANTALUM REMOVAL DURING CHEMICAL MECHANICAL PROCESSING 审中-公开
标题翻译：化学机械加工中的钽去除
公开(公告)号：WO02055259A3
公开(公告)日：2002-09-19
申请号：PCT/US0200062
申请日：2002-01-02
申请人： APPLIED MATERIALS INC
发明人： SUN LIZHONG , TSAI STAN D , LI SHIJIAN , LIU FENG
IPC分类号： C09G1/02 , H01L21/321 , H01L21/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.
摘要翻译：本发明一般涉及用于在化学机械抛光中选择性去除阻挡层的组合物和方法。在一个方面，用于选择性去除阻挡层的组合物包含至少一种还原剂，来自至少一种过渡金属的离子和水。该组合物可进一步包含至少一种用于pH稳定性的缓冲剂，至少一种用于提供初始pH的pH调节剂，腐蚀抑制剂，研磨颗粒和/或金属螯合剂。在另一个实施方案中，本发明一般涉及用于在化学机械抛光中去除导电材料层和阻挡层的组合物和方法。在一个方面，去除导电材料层和阻挡层的方法包括将导电材料层选择性组合物施加到抛光垫，在导电材料层选择性组合物存在下抛光基板，施加阻挡层选择性组合物施加到抛光垫上，并且在阻挡层选择性组合物存在下抛光衬底。

9. 发明申请

WO02063669A3 METHOD AND APPARATUS FOR TWO-STEP BARRIER LAYER POLISHING 审中-公开
标题翻译：用于两步阻挡层抛光的方法和设备
公开(公告)号：WO02063669A3
公开(公告)日：2002-12-05
申请号：PCT/US0150150
申请日：2001-10-26
申请人： APPLIED MATERIALS INC
发明人： SUN LIZHONG , TSAI STAN , LI SHIJIAN
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , C09K3/14
CPC分类号： C09G1/02 , H01L21/7684
摘要： A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.
摘要翻译：用于平坦化其上设置有阻挡层的衬底表面的方法和组合物。在一个方面中，本发明提供了平坦化具有设置在其上的阻挡层和含铜材料的衬底表面，包括对衬底进行化学机械抛光以选择性地去除多余的含铜材料，对衬底进行化学机械抛光以选择性地去除残留的含铜材料和阻挡层的一部分，以及化学机械抛光衬底以选择性地去除残留阻挡层。

10. 发明申请

WO0244293A2 METHOD AND COMPOSITION FOR THE REMOVAL OF RESIDUAL MATERIALS DURING SUBSTRATE PLANARIZATION 审中-公开
标题翻译：在基板平面化期间去除残留材料的方法和组合
公开(公告)号：WO0244293A2
公开(公告)日：2002-06-06
申请号：PCT/US0143267
申请日：2001-11-20
申请人： APPLIED MATERIALS INC
发明人： SUN LIZHONG , TSAI STAN , LI SHIJIAN
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/306 , H01L21/321
CPC分类号： C09G1/02
摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.
摘要翻译：一种用于平坦化衬底的方法，组合物和计算机可读介质。一方面，组合物包括一种或多种螯合剂和至少一种过渡金属的离子，一种或多种表面活性剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。该方法包括使用包含一种或多种螯合剂和至少一种过渡金属的离子的组合物平面化底物。一方面，该方法包括处理设置在抛光垫上的衬底，包括执行第一抛光工艺以基本上除去含铜材料，执行第二抛光工艺以去除剩余的含铜材料，所述第二抛光工艺包括递送CMP组合物到抛光垫，将一种或多种螯合剂和至少一种过渡金属的离子与CMP组合物原位混合，并从基材表面除去残留的含铜材料。本发明还提供了一种用于平坦化衬底表面的指令的计算机可读介质，当由一个或多个处理器执行时，所述指令被布置成使一个或多个处理器控制系统执行抛光所述衬底以基本上去除形成的含铜材料在其上并用包含一种或多种螯合剂和至少一种过渡金属的离子的CMP组合物抛光衬底以除去残留的含铜材料。

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