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    • 6. 发明申请
    • CONFORMAL LAYERS BY RADICAL-COMPONENT CVD
    • 通过放射性元素CVD的合适层
    • WO2011109148A3
    • 2012-02-23
    • PCT/US2011024378
    • 2011-02-10
    • APPLIED MATERIALS INCLIANG JINGMEICHEN XIAOLINLI DONGQINGINGLE NITIN K
    • LIANG JINGMEICHEN XIAOLINLI DONGQINGINGLE NITIN K
    • H01L21/318
    • H01L21/0217C23C16/345C23C16/452C23C16/56H01L21/02164H01L21/02271H01L21/02326H01L21/76837
    • Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.
    • 描述了用于形成含有硅和氮的保形电介质层(例如,硅 - 氮 - 氢(Si-N-H)膜)的方法,材料和系统,其来自无碳硅和氮前体和自由基 - 氮前体。 无碳硅氮前驱主要通过与自由基 - 氮前体接触激发。 由于无碳膜而形成硅 - 氮膜,因此,薄膜转化成硬化氧化硅可以减少孔形成和体积收缩。 沉积的含硅和氮的膜可以全部或部分地转化为允许保形介电层的光学特性可选择的氧化硅。 可以在低温下进行薄的含硅和氮的膜的沉积,以在衬底沟槽中形成衬垫层。 发现低温内衬层可改善润湿性能,并允许可流动膜更完全地填充沟槽。
    • 7. 发明申请
    • RADICAL STEAM CVD
    • 放射性CVD
    • WO2012094149A3
    • 2013-01-31
    • PCT/US2011066275
    • 2011-12-20
    • APPLIED MATERIALS INCLI DONGQINGLIANG JINGMEICHEN XIAOLININGLE NITIN K
    • LI DONGQINGLIANG JINGMEICHEN XIAOLININGLE NITIN K
    • H01L21/316
    • C23C16/308C23C16/045C23C16/452C23C16/56
    • Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
    • 描述形成氧化硅层的方法。 这些方法包括同时将等离子体激发(自由基)蒸汽与未催化的硅前体组合。 可以通过等离子体激发途径(例如通过向蒸汽中加入氨)和/或通过选择含氮的未催化的硅前体来供应氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现,并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。