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1. 发明申请

WO2008043047B1 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 审中-公开
标题翻译：用于在等离子体室中衬底夹紧的装置和方法
公开(公告)号：WO2008043047B1
公开(公告)日：2008-10-02
申请号：PCT/US2007080491
申请日：2007-10-04
申请人： APPLIED MATERIALS INC , BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
发明人： BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
IPC分类号： G06F11/30 , G06F19/00 , G21C17/00
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明总体上提供了用于监测和维持等离子体反应器中的基板的平整度的方法和装置。本发明的某些实施例提供了一种用于处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极和平行于静电吸盘的位置之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

2. 发明申请

WO2008043047A3 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 审中-公开
标题翻译：在等离子室中用于衬底夹紧的装置和方法
公开(公告)号：WO2008043047A3
公开(公告)日：2008-07-31
申请号：PCT/US2007080491
申请日：2007-10-04
申请人： APPLIED MATERIALS INC , BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
发明人： BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
IPC分类号： G06F11/30 , G06F19/00 , G21C17/00
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明总体上提供了用于监测和维持等离子体反应器中的衬底的平坦度的方法和设备。本发明的某些实施例提供了一种用于处理衬底的方法，包括：将衬底定位在静电吸盘上;在静电吸盘中的电极和平行于静电吸盘定位的反电极之间施加RF功率;将DC偏压施加到静电吸盘中的电极夹紧静电吸盘上的基片，并测量静电吸盘的虚阻抗。

3. 发明申请

WO2007035389A8 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
标题翻译：真空反应室与X灯加热器
公开(公告)号：WO2007035389A8
公开(公告)日：2007-10-11
申请号：PCT/US2006035753
申请日：2006-09-13
申请人： APPLIED MATERIALS INC , AL-BAYATI AMIR , D CRUZ LESTER A , DEMOS ALEXANDROS T , DUBOIS DALE R , ELSHEREF KHALED A , IWASAKI NAOYUKI , M SAAD HICHEM , ROCHA-ALVAREZ JUAN CARLOS , SHAH ASHISH , SHIMIZU TAKASHI
发明人： AL-BAYATI AMIR , D CRUZ LESTER A , DEMOS ALEXANDROS T , DUBOIS DALE R , ELSHEREF KHALED A , IWASAKI NAOYUKI , M SAAD HICHEM , ROCHA-ALVAREZ JUAN CARLOS , SHAH ASHISH , SHIMIZU TAKASHI
IPC分类号： G21G5/00
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于电子束处理基板的方法和装置。提供了包括真空室，与真空室连通的至少一个热电偶组件，与真空室连通的加热装置及其组合的电子束装置。在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和衬底支撑件之间的栅格。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，第一光阵列和第二光阵列被定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

4. 发明申请

WO2007035389A3 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
标题翻译：真空反应室与X灯加热器
公开(公告)号：WO2007035389A3
公开(公告)日：2008-07-17
申请号：PCT/US2006035753
申请日：2006-09-13
申请人： APPLIED MATERIALS INC , AL-BAYATI AMIR , D CRUZ LESTER A , DEMOS ALEXANDROS T , DUBOIS DALE R , ELSHEREF KHALED A , IWASAKI NAOYUKI , M SAAD HICHEM , ROCHA-ALVAREZ JUAN CARLOS , SHAH ASHISH , SHIMIZU TAKASHI
发明人： AL-BAYATI AMIR , D CRUZ LESTER A , DEMOS ALEXANDROS T , DUBOIS DALE R , ELSHEREF KHALED A , IWASAKI NAOYUKI , M SAAD HICHEM , ROCHA-ALVAREZ JUAN CARLOS , SHAH ASHISH , SHIMIZU TAKASHI
IPC分类号： H01J35/00
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

5. 发明申请

WO2010048236A3 NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER 审中-公开
标题翻译：具有氮化硅电荷陷阱层的非易失性存储器
公开(公告)号：WO2010048236A3
公开(公告)日：2010-07-29
申请号：PCT/US2009061390
申请日：2009-10-21
申请人： APPLIED MATERIALS INC , BALSEANU MIHAELA , ZUBKOV VLADIMIR , XIA LI-QUN , NOORI ATIF , ARGHAVANI REZA , WITTY DEREK R , AL-BAYATI AMIR
发明人： BALSEANU MIHAELA , ZUBKOV VLADIMIR , XIA LI-QUN , NOORI ATIF , ARGHAVANI REZA , WITTY DEREK R , AL-BAYATI AMIR
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L21/3185 , H01L21/28282 , H01L21/3105 , H01L21/3115 , H01L21/31155 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： A flash memory device and methods of forming a flash memory device are provided. In one version, the flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
摘要翻译：提供了闪存器件和形成闪存器件的方法。在一个版本中，闪存器件包括具有包含碳，硼或氧的掺杂剂的掺杂氮化硅层。掺杂的氮化硅层在层中产生更高数量和更高浓度的氮和硅悬挂键并且提供非易失性存储器件的单位单元的电荷保持能力和电荷保持时间的增加。

6. 发明申请

WO2010117548A3 HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS 审中-公开
标题翻译：高性能TCO硅界面接触结构，用于高效薄膜硅太阳能电池
公开(公告)号：WO2010117548A3
公开(公告)日：2011-01-13
申请号：PCT/US2010027002
申请日：2010-03-11
申请人： APPLIED MATERIALS INC , SHENG SHURAN , CHAE YONG KEE , KLEIN STEFAN , AL-BAYATI AMIR , KUMAR BHASKAR
发明人： SHENG SHURAN , CHAE YONG KEE , KLEIN STEFAN , AL-BAYATI AMIR , KUMAR BHASKAR
IPC分类号： H01L31/042
CPC分类号： H01L31/022466 , H01L31/02167 , H01L31/022483 , H01L31/0236 , H01L31/028 , H01L31/035281 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/056 , H01L31/076 , H01L31/1884 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
摘要翻译：提供一种用于形成太阳能电池的方法和装置。在一个实施例中，光伏器件包括设置在衬底上的第一TCO层，设置在第一TCO层上的第二TCO层和形成在第二TCO层上的p型含硅层。在另一个实施例中，形成光伏器件的方法包括在衬底上形成第一TCO层，在第一TCO层上形成第二TCO层，以及在第二TCO层上形成第一p-i-n结。

7. 发明申请

WO2011133410A2 APPARATUS AND METHODS FOR REDUCING LIGHT INDUCED DAMAGE IN THIN FILM SOLAR CELLS 审中-公开
标题翻译：用于减少薄膜太阳能电池中的光诱导损伤的装置和方法
公开(公告)号：WO2011133410A2
公开(公告)日：2011-10-27
申请号：PCT/US2011032612
申请日：2011-04-15
申请人： APPLIED MATERIALS INC , AL-BAYATI AMIR , CHAE YONG K , SHENG SHURAN , KUMAR BHASKAR , VALFER ERAN
发明人： AL-BAYATI AMIR , CHAE YONG K , SHENG SHURAN , KUMAR BHASKAR , VALFER ERAN
IPC分类号： H01L31/18 , H01L31/042 , H01L31/075
CPC分类号： H01L31/202 , C23C16/24 , C23C16/505 , H01L21/02532 , H01L21/0262 , H01L31/03767 , Y02E10/50 , Y02P70/521
摘要： Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer. In accordance with further aspects of the present invention, the controller controls the RF power and the deposition rate so that a product (x) of the RF power in watts, the deposition rate of the i-layer in nm per min and the thickness of the i-layer in nm is less than a predetermined number y and satisfies the equation y = 5E11 *x + 3.3749 plus or minus a margin.
摘要翻译：公开了一种在用于薄膜光伏电池的衬底上形成含硅i层的装置和方法。该装置包括限定包含衬底的处理区域的腔室，耦合到等离子体产生区域的氢源和硅烷源，在等离子体产生区域中以功率电平施加功率以产生等离子体和沉积物的RF电源以所选择的沉积速率将含硅i层以选定的厚度和控制器进行。控制器控制基板上的i层的功率水平和沉积速率，使得薄膜太阳能电池呈现符合RF功率，沉积速率和选定厚度的乘积的线性拟合的光诱导损伤的i层。根据本发明的另外的方面，控制器控制RF功率和沉积速率，使得RF功率的乘积（x）（瓦），i层的沉积速率（nm / min）和 i层的nm小于预定数量y，并且满足等式y = 5E11 * x + 3.3749加或减边缘。

8. 发明申请

WO2011162940A3 METHOD OF USING SILICON ALLOY LAYERS IN THIN-FILM PHOTOVOLTAICS 审中-公开
标题翻译：在薄膜光伏中使用硅合金层的方法
公开(公告)号：WO2011162940A3
公开(公告)日：2012-02-23
申请号：PCT/US2011039300
申请日：2011-06-06
申请人： APPLIED MATERIALS INC , SARAF GAURAV , KUMAR BHASKAR , SHENG SHURAN , CHAE YONG KEE , AL-BAYATI AMIR
发明人： SARAF GAURAV , KUMAR BHASKAR , SHENG SHURAN , CHAE YONG KEE , AL-BAYATI AMIR
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/056 , H01L31/076 , H01L31/1812 , H01L31/1872 , Y02E10/52 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for making thin-film photovoltaic devices is provided. The devices include a doped microcrystalline semiconductor layer having a high band gap core formed by adding a band gap enhancing element. Crystallinity of the layer is achieved by forming an amorphous doped semiconductor layer, converting the amorphous doped semiconductor layer to a microcrystalline layer using a plasma treatment, and using the microcrystalline layer as a seed layer for forming the rest of the layer. The doped layer formed has a microcrystalline morphology, a high band gap inner portion, and a low band gap outer portion.
摘要翻译：提供制造薄膜光伏器件的方法。这些器件包括通过添加带隙增强元件形成的具有高带隙芯的掺杂微晶半导体层。通过形成非晶掺杂半导体层，使用等离子体处理将非晶掺杂半导体层转换成微晶层并使用微晶层作为形成层的其余部分的种子层来实现层的结晶度。形成的掺杂层具有微晶形态，高带隙内部和低带隙外部。

9. 发明申请

WO2006064282B1 A METHOD OF ION IMPLANTATION TO REDUCE TRANSIENT ENHANCED DIFFUSION 审中-公开
标题翻译：离子注入减少瞬态增强扩散的方法
公开(公告)号：WO2006064282B1
公开(公告)日：2006-11-09
申请号：PCT/GB2005004925
申请日：2005-12-19
申请人： APPLIED MATERIALS INC , GRAOUI HOUDA , FOAD MAJEED ALI , AL-BAYATI AMIR
发明人： GRAOUI HOUDA , FOAD MAJEED ALI , AL-BAYATI AMIR
IPC分类号： H01L21/265 , H01L21/324
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/268
摘要： A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.
摘要翻译：离子注入的方法包括以下步骤：提供半导体衬底; 在与半导体衬底的表面的法线成20-60°的范围内的角度下在半导体衬底中以注入方向执行预非晶化注入，以及在半导体衬底中执行掺杂剂的注入以提供一个浅结。在本发明的特征中，该方法进一步包括在半导体衬底中执行缺陷捕获元件的注入，并且以第一注入能量执行预非晶化注入步骤，并且缺陷俘获元件的注入在第二注入能量，第一注入能量与第二注入能量的比率在10-40％的范围内。

10. 发明申请

WO2006064282A2 A METHOD OF ION IMPLANTATION TO REDUCE TRANSIENT ENHANCED DIFFUSION 审中-公开
标题翻译：一种减少瞬时增强扩散的离子植入方法
公开(公告)号：WO2006064282A2
公开(公告)日：2006-06-22
申请号：PCT/GB2005004925
申请日：2005-12-19
申请人： APPLIED MATERIALS INC , GRAOUI HOUDA , FOAD MAJEED ALI , AL-BAYATI AMIR
发明人： GRAOUI HOUDA , FOAD MAJEED ALI , AL-BAYATI AMIR
IPC分类号： H01L21/265 , H01L21/324
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/268
摘要： A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.
摘要翻译：离子注入的方法包括以下步骤：提供半导体衬底; 在所述半导体衬底中以与所述半导体衬底的表面的法线成20-60°的范围内的角度在所述半导体衬底中进行预非晶化注入，以及在所述半导体衬底中进行掺杂剂的注入以提供一个浅交界处。在本发明的特征中，该方法还包括在半导体衬底中执行缺陷俘获元件的注入，并且以第一注入能量执行预非晶化注入步骤，并且在第二次执行缺陷俘获元件的注入注入能量，第一注入能量与第二注入能量之比在10-40％的范围内。

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