专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2013066667A1 DRY ETCH PROCESSES 审中-公开
标题翻译：干蚀工艺
公开(公告)号：WO2013066667A1
公开(公告)日：2013-05-10
申请号：PCT/US2012/061447
申请日：2012-10-23
申请人： APPLIED MATERIALS, INC. , XUE, Jun , LIU, Jie , CHEN, Yongmei , MICHAELSON, Timothy , DEATON, Paul , WEIDMAN, Timothy W. , NGAI, Christopher S.
发明人： XUE, Jun , LIU, Jie , CHEN, Yongmei , MICHAELSON, Timothy , DEATON, Paul , WEIDMAN, Timothy W. , NGAI, Christopher S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/02181 , H01L21/02189 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/31122 , H01L21/31144
摘要： Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO 2 , HfB x O y , ZrO 2 , ZrB x O y , to a plasma comprising BCl 3 and argon to etch away said at least part of the film. Certain other methods relate to patterning substrates using said methods of etching films.
摘要翻译：提供蚀刻和/或图案化薄膜的方法。某些方法包括将包含BCl 3和氩的等离子体中的HfO 2，HfB x O y，ZrO 2，ZrB x O y中的一种或多种的至少部分膜暴露在衬底上，以蚀刻掉所述至少部分膜。某些其它方法涉及使用所述蚀刻膜的方法图案化衬底。

2. 发明申请

WO2014130527A1 ATOMIC LAYER DEPOSITION OF METAL ALLOY FILMS 审中-公开
标题翻译：原子层沉积金属合金膜
公开(公告)号：WO2014130527A1
公开(公告)日：2014-08-28
申请号：PCT/US2014/017101
申请日：2014-02-19
申请人： APPLIED MATERIALS, INC. , WEIDMAN, Timothy W. , MICHAELSON, Timothy , MA, Paul F. , DEATON, Paul
发明人： WEIDMAN, Timothy W. , MICHAELSON, Timothy , MA, Paul F. , DEATON, Paul
IPC分类号： C23C16/06 , C23C16/448
CPC分类号： H01L29/78 , C23C16/18 , C23C16/45553 , H01L21/28088 , H01L21/28562 , H01L21/76841 , H01L21/76871 , H01L29/4966
摘要： Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising M(BH 4 ) 4 to produce a metal alloy film on the substrate surface, wherein M is selected from hafnium and zirconium, and the organometallic precursor contains a metal N. Gate stacks are described comprising a copper barrier layer comprising boron, a first metal M selected from Hf and Zr, and a second metal N selected from tantalum, tungsten, copper, ruthenium, rhodium, cobalt and nickel; and a copper layer overlying the copper barrier seed layer.
摘要翻译：提供了沉积含铪或锆的金属合金膜的方法。某些方法包括将基底表面依次暴露于有机金属前体和包含M（BH4）4的还原剂的交替流，以在基底表面上产生金属合金膜，其中M选自铪和锆，并且有机金属前体含有描述了包括包含硼的铜阻挡层，选自Hf和Zr的第一金属M和选自钽，钨，铜，钌，铑，钴和镍的第二金属N的铜叠层。以及覆盖在铜屏障种子层上的铜层。

3. 发明申请

WO2012048108A2 RADIATION PATTERNABLE CVD FILM 审中-公开
标题翻译：辐射图案CVD薄膜
公开(公告)号：WO2012048108A2
公开(公告)日：2012-04-12
申请号：PCT/US2011/055102
申请日：2011-10-06
申请人： APPLIED MATERIALS, INC. , WEIDMAN, Timothy W. , MICHAELSON, Timothy , DEATON, Paul , INGLE, Nitin K. , MALLICK, Abhijit Basu , CHATTERJEE, Amit
发明人： WEIDMAN, Timothy W. , MICHAELSON, Timothy , DEATON, Paul , INGLE, Nitin K. , MALLICK, Abhijit Basu , CHATTERJEE, Amit
IPC分类号： H01L21/027 , H01L21/205
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross- linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译：提供了在基板上形成对辐射敏感的光刻胶的方法。描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。沉积方法利用可交联部分的前体，其在暴露于辐射时将交联。辐射可以在有或没有氧的情况下进行。然后可以将曝光或未曝光的区域显影在碱性显影液中。

4. 发明申请

WO2012048094A2 ATOMIC LAYER DEPOSITION OF PHOTORESIST MATERIALS AND HARD MASK PRECURSORS 审中-公开
标题翻译：光电材料和硬掩模前驱体的原子层沉积
公开(公告)号：WO2012048094A2
公开(公告)日：2012-04-12
申请号：PCT/US2011/055074
申请日：2011-10-06
申请人： APPLIED MATERIALS, INC. , WEIDMAN, Timothy W. , MICHAELSON, Timothy , DEATON, Paul
发明人： WEIDMAN, Timothy W. , MICHAELSON, Timothy , DEATON, Paul
IPC分类号： H01L21/027 , H01L21/205
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
摘要翻译：提供了在基板上形成对辐射敏感的光刻胶的方法。描述了形成膜（例如，含硅膜）光致抗蚀剂的原子层沉积方法。该过程可以重复多次以沉积多个硅光致抗蚀剂层。还公开了在光致抗蚀剂中沉积光致抗蚀剂和形成图案的工艺，其利用含碳底层如无定形碳层。

5. 发明申请

WO2013066666A1 ATOMIC LAYER DEPOSITION OF FILMS USING PRECURSORS CONTAINING HAFNIUM OR ZIRCONIUM 审中-公开
标题翻译：使用含有铪或锆原子的前体进行薄膜的原子层沉积
公开(公告)号：WO2013066666A1
公开(公告)日：2013-05-10
申请号：PCT/US2012/061443
申请日：2012-10-23
申请人： APPLIED MATERIALS, INC. , MICHAELSON, Timothy , WEIDMAN, Timothy W. , DEATON, Paul
发明人： MICHAELSON, Timothy , WEIDMAN, Timothy W. , DEATON, Paul
IPC分类号： H01L21/205
CPC分类号： H01L21/0228 , C23C16/38 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/02189 , H01L21/02274 , H01L21/0337
摘要： Provided are low temperature methods of depositing hafnium or zirconium containing films using a Hf(BH 4 ) 4 precursor, or Zr(BH 4 ) 4 precursor, respectively, as well as a co-reactant. The co-reactant can be selected to obtain certain film compositions. Co-reactants comprising an oxidant can be used to deposit oxygen into the film. Accordingly, also provided are films comprising a metal, boron and oxygen, wherein the metal comprises hafnium where a Hf(BH 4 ) 4 precursor is used, or zirconium, where a Zr(BH 4 ) 4 precursor is used.
摘要翻译：提供了分别使用Hf（BH4）4前体或Zr（BH4）4前体以及共反应物沉积含铪或含锆膜的低温方法。可以选择共反应物以获得某些膜组合物。可以使用包含氧化剂的共反应物将氧沉积到膜中。因此，还提供了包含金属，硼和氧的膜，其中金属包括使用Hf（BH4）4前体的铪或使用Zr（BH4）4前体的锆）。

6. 发明申请

WO2014152023A1 VAPOR DEPOSITION DEPOSITED PHOTORESIST, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR 审中-公开
标题翻译：蒸发沉积物沉积光电子体及其制造和光刻系统
公开(公告)号：WO2014152023A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/026826
申请日：2014-03-13
申请人： APPLIED MATERIALS, INC.
发明人： MICHAELSON, Timothy , WEIDMAN, Timothy W. , CHIN, Barry Lee , FOAD, Majeed A. , DEATON, Paul
IPC分类号： G03F7/16 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70716 , G03F7/09 , G03F7/167 , G03F7/2037
摘要： A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.
摘要翻译：光致抗蚀剂气相沉积系统包括：真空室，其具有用于保持基板的加热元件和冷却卡盘，所述真空室具有加热入口; 以及连接到加热入口的气相沉积系统，用于将前体挥发到真空室中，用于在由冷却的卡盘冷却的基板上冷凝光致抗蚀剂。沉积系统产生半导体晶片系统，其包括：半导体晶片; 以及半导体晶片上的气相沉积光致抗蚀剂。需要半导体晶片系统的极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于对来自远紫外光源的光进行成像的掩模版台; 以及用于将具有气相沉积光致抗蚀剂的半导体晶片放置的晶片台。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式