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1. 发明申请

WO2013052712A2 SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 审中-公开
标题翻译：通过可转化氢终止方式选择性硅
公开(公告)号：WO2013052712A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/058818
申请日：2012-10-04
申请人： APPLIED MATERIALS, INC. , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

2. 发明申请

WO2013025336A1 DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS 审中-公开
标题翻译：含氮和含氮薄膜的干燥剂
公开(公告)号：WO2013025336A1
公开(公告)日：2013-02-21
申请号：PCT/US2012/048842
申请日：2012-07-30
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065 , H01L21/318
CPC分类号： H01L21/3065 , H01L21/31116
摘要： Method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes remote plasma etch formed from fluorine-containing precursor and oxygen-containing precursor. Plasma effluents from remote plasma are flowed into a substrate processing region where the plasma effluents react with exposed regions of silicon-and-nitrogen-containing material. Plasmas effluents react with patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. Silicon-and-nitrogen-containing material selectivity results partly from presence of an ion suppression element positioned between the remote plasma and substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。含氮和氮的材料的选择性部分地来自位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

3. 发明申请

WO2013033527A2 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 审中-公开
标题翻译：选择性抑制含氮和硅的材料的干蚀刻速率
公开(公告)号：WO2013033527A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053329
申请日：2012-08-31
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H 2 ). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了一种抑制图案化异质结构上的暴露的含硅和氮材料的蚀刻速率的方法，其包括两阶段远程等离子体蚀刻。使用该方法增加了硅相对于氮化硅和其他含硅和氮材料的蚀刻选择性。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的多相结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一阶段的等离子体流出物由包括三氟化氮和氢（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺少保护性固体副产物的材料。第二阶段的等离子体流出物由含氟前体的远程等离子体形成。

4. 发明申请

WO2012115750A2 REMOTELY-EXCITED FLUORINE AND WATER VAPOR ETCH 审中-公开
标题翻译：远程激光和水蒸气蚀刻
公开(公告)号：WO2012115750A2
公开(公告)日：2012-08-30
申请号：PCT/US2012/023356
申请日：2012-01-31
申请人： APPLIED MATERIALS, INC. , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin K.
发明人： ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01L28/91
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。由组合产生的化学反应产生反应物，其蚀刻图案化的异质结构，以在实施方案中产生几乎没有变形的薄的残余结构。这些方法可以用于保守地修整氧化硅，同时去除很少或没有硅，多晶硅，氮化硅，钛或氮化钛。在示例性实施例中，已经发现本文所述的蚀刻工艺是在薄的圆柱形导电结构周围除去模制氧化物，而不会导致圆柱形结构显着变形。

5. 发明申请

WO2013052509A2 REMOTE PLASMA BURN-IN 审中-公开
标题翻译：远程等离子体燃烧
公开(公告)号：WO2013052509A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/058498
申请日：2012-10-02
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
发明人： LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。这些方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。新的内表面暴露在远程等离子体系统内。（新）内表面然后通过（1）在远程等离子体系统内从含氢前体形成远程等离子体的顺序步骤进行处理，然后（2）将内表面暴露于水蒸汽。步骤（1） - （2）重复至少十次以完成老化过程。在内表面的处理之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前体流过远程等离子体源并将等离子体流出物与直接流到衬底处理区的第二前体结合在衬底上形成电介质膜。

6. 发明申请

WO2013049173A2 IMPROVED INTRENCH PROFILE 审中-公开
标题翻译：改进的内容简档
公开(公告)号：WO2013049173A2
公开(公告)日：2013-04-04
申请号：PCT/US2012/057294
申请日：2012-09-26
申请人： APPLIED MATERIALS, INC. , SAPRE, Kedar , INGLE, Nitin K. , TANG, Jing
发明人： SAPRE, Kedar , INGLE, Nitin K. , TANG, Jing
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/76224
摘要： A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.
摘要翻译：描述了蚀刻半导体衬底中的凹部的方法。该方法可以包括在衬底的沟槽中形成介质衬垫层，其中衬层具有第一密度。该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二电介质层。第二电介质层可以首先在沉积之后流动，并且具有小于衬垫的第一密度的第二密度。该方法可以进一步包括将衬底暴露于干蚀刻剂，其中蚀刻剂去除第一衬里层和第二介电层的一部分以形成凹陷，其中干燥蚀刻剂包括含氟化合物和分子氢，并且其中用于去除第一介电衬垫层以去除第二介电层的蚀刻速率比为约1:1.2至约1:1。

7. 发明申请

WO2012094149A2 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：WO2012094149A2
公开(公告)日：2012-07-12
申请号：PCT/US2011/066275
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , LI, DongQing , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin K.
发明人： LI, DongQing , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin K.
IPC分类号： H01L21/316
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

8. 发明申请

WO2012122392A2 POST-PLANARIZATION DENSIFICATION 审中-公开
标题翻译：后期平面化差异
公开(公告)号：WO2012122392A2
公开(公告)日：2012-09-13
申请号：PCT/US2012/028310
申请日：2012-03-08
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/304
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹入的开放区域中，密度也可以增加。狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。这种效果也可以被描述为模式加载效应的降低。该方法涉及形成二氧化硅平坦化。平面化暴露出更靠近窄沟槽设置的新介质界面。新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

9. 发明申请

WO2011109148A2 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 审中-公开
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：WO2011109148A2
公开(公告)日：2011-09-09
申请号：PCT/US2011/024378
申请日：2011-02-10
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , LI, DongQing , INGLE, Nitin K.
发明人： LIANG, Jingmei , CHEN, Xiaolin , LI, DongQing , INGLE, Nitin K.
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅和氮前体和自由基 - 氮前体。无碳硅氮前驱主要通过与自由基 - 氮前体接触激发。由于无碳膜而形成硅 - 氮膜，因此，薄膜转化成硬化氧化硅可以减少孔形成和体积收缩。沉积的含硅和氮的膜可以全部或部分地转化为允许保形介电层的光学特性可选择的氧化硅。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。发现低温内衬层可改善润湿性能，并允许可流动膜更完全地填充沟槽。

10. 发明申请

WO2011084752A3 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 审中-公开
公开(公告)号：WO2011084752A3
公开(公告)日：2011-07-14
申请号：PCT/US2010/061356
申请日：2010-12-20
申请人： APPLIED MATERIALS, INC. , WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/3105 , H01L21/314
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

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