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    • 6. 发明申请
    • A PHYSICAL VAPOR DEPOSITION PLASMA REACTOR WITH RF SOURCE POWER APPLIED TO THE TARGET
    • 具有应用于目标的射频源功率的物理蒸气沉积式等离子体反应器
    • WO2006083929A2
    • 2006-08-10
    • PCT/US2006/003495
    • 2006-01-30
    • APPLIED MATERIALS, INC.
    • BROWN, Karl, M.PIPITONE, JohnMEHTA, Vineet
    • B01J19/08
    • C23C14/185C23C14/046C23C14/354H01J37/321H01J37/3405
    • A physical vapor deposition reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet. A metal sputter target is located at the ceiling and a high voltage D. C. source coupled to the sputter target. An RF plasma source power generator is coupled to the metal sputter target and has a frequency suitable for exciting kinetic electrons. Preferably, the wafer support pedestal comprises an electrostatic chuck and an RF plasma bias power generator is coupled to the wafer support pedestal having a frequency suitable for coupling energy to plasma ions. Preferably, a solid metal RF feed rod having a diameter in excess of about 0.5 inches engages the metal sputter target, the RF feed rod extending axially above the target through the ceiling and being coupled to the RF plasma source power generator.
    • 物理气相沉积反应器包括真空室,其包括侧壁,天花板和靠近室底部的晶片支撑台座,耦合到该室的真空泵,耦合到该室的工艺气体入口以及耦合到 工艺气体入口。 金属溅射靶位于天花板和耦合到溅射靶的高电压D.C.源。 RF等离子体源功率发生器耦合到金属溅射靶并且具有适于激发动电子的频率。 优选地,晶片支撑基座包括静电卡盘,并且RF等离子体偏置功率发生器耦合到具有适于将能量耦合到等离子体离子的频率的晶片支撑基座。 优选地,具有超过约0.5英寸的直径的固体金属RF馈送棒与金属溅射靶接合,RF馈送杆通过天花板轴向延伸到目标上方并且耦合到RF等离子体源发电机。