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1. 发明申请

WO2010036621A2 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 审中-公开
标题翻译：使用OCTADECABORANE自补偿植入物进行无缺陷断层形成
公开(公告)号：WO2010036621A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/057708
申请日：2009-09-21
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
发明人： LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/32357 , H01J37/32412 , H01L21/26513 , H01L21/324
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译：一种用硼簇植入半导体衬底的方法和装置。通过等离子体浸渍或离子束注入，注入十八硼烷衬底。然后将衬底表面退火以完全解离并激活硼簇。退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

2. 发明申请

WO2013090581A1 MULTIPLE BEAM COMBINER FOR LASER PROCESSING APPARATUS 审中-公开
标题翻译：用于激光加工设备的多光束组合器
公开(公告)号：WO2013090581A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/069518
申请日：2012-12-13
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HOLMGREN, Douglas E. , HOWELLS, Samuel C. , TONG, Edric , ADAMS, Bruce E. , LI, Jiping , HUNTER, Aaron Muir
发明人： MOFFATT, Stephen , HOLMGREN, Douglas E. , HOWELLS, Samuel C. , TONG, Edric , ADAMS, Bruce E. , LI, Jiping , HUNTER, Aaron Muir
IPC分类号： H01L21/268 , H01L21/26
CPC分类号： G02B27/106 , G02B17/0888 , G02B27/0025 , G02B27/10 , G02B27/1006 , G02B27/12 , G02B27/123 , G02B27/126 , G02B27/14 , G02B27/143 , G02B27/30
摘要： Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.
摘要翻译：公开了用于组合放大辐射束的装置和方法。光束组合器具有准直光学器件，其被定位成以相对于准直光学器件的光轴的恒定入射角接收多个相干辐射束。在一些实施例中，相应的入射角也可以不同。准直光学元件具有使光束准直的光学特性。光学性质可以是折射或反射的，或其组合。还可以提供收集光学器件以将多个光束引导到准直光学元件。光束组合器可以用在热处理装置中，以将多于两个的相干放大辐射束（例如激光器）组合成单个光束。

3. 发明申请

WO2013070917A1 APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION 审中-公开
标题翻译：通过激光衍射测量三维半导体结构温度的装置和方法
公开(公告)号：WO2013070917A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/064153
申请日：2012-11-08
申请人： APPLIED MATERIALS, INC. , PAN, Heng , ROGERS, Matthew Scott , HUNTER, Aaron Muir , MOFFATT, Stephen
发明人： PAN, Heng , ROGERS, Matthew Scott , HUNTER, Aaron Muir , MOFFATT, Stephen
IPC分类号： H01L21/66
CPC分类号： G01J5/08 , G01J5/0007 , G01J5/0803 , G01J2005/0074 , G01J2005/0077
摘要： Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
摘要翻译：本发明的实施例一般涉及用于测量和监测其上具有3D特征的基板的温度的方法的装置。该装置包括用于照射其上具有3D特征的基板的光源，用于聚焦和聚焦反射光的聚焦透镜，以及用于检测聚焦反射光的发射率的发射计。该装置还可以包括分束器和成像装置。成像装置提供反射光的衍射图案的放大图像。该方法包括用光照射具有3D特征的基板，并且将聚焦透镜聚焦在反射光上。然后将聚焦的光导向传感器，并测量衬底的发射率。反射光也可能撞击成像装置以产生反射光的衍射图案的放大图像。

4. 发明申请

WO2011034641A1 METHODS OF SOLID PHASE RECRYSTALLIZATION OF THIN FILM USING PULSE TRAIN ANNEALING METHOD 审中-公开
标题翻译：使用脉冲火焰退火方法的薄膜固相重组方法
公开(公告)号：WO2011034641A1
公开(公告)日：2011-03-24
申请号：PCT/US2010/035013
申请日：2010-05-14
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HUNTER, Aaron Muir , ADAMS, Bruce E.
发明人： MOFFATT, Stephen , HUNTER, Aaron Muir , ADAMS, Bruce E.
IPC分类号： H01L21/324 , H01L21/20
CPC分类号： H01L21/02686 , C30B13/24 , C30B29/06 , H01L21/02521
摘要： Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.
摘要翻译：本发明的实施例提供使用多个电磁能脉冲进行薄膜固相重结晶的方法。在一个实施例中，本发明的方法可以用于通过将多个能量递送到沉积非晶层的结晶种子区域或层来退火整个衬底表面或衬底的表面的选定区域使非晶层重结晶，使其具有与下面的结晶种子区域或层相同的晶粒结构和晶体取向。

5. 发明申请

WO2012115681A1 AMBIENT LAMINAR GAS FLOW DISTRIBUTION IN LASER PROCESSING SYSTEMS 审中-公开
标题翻译：激光加工系统中的环境层流气体分布
公开(公告)号：WO2012115681A1
公开(公告)日：2012-08-30
申请号：PCT/US2011/045968
申请日：2011-07-29
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HUNTER, Aaron Muir
发明人： MOFFATT, Stephen , HUNTER, Aaron Muir
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： F27D21/00 , F27D5/0037 , F27D2021/0078 , H01L21/67115
摘要： A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.
摘要翻译：公开了半导体衬底退火的方法和装置。该装置具有退火能量源和衬底支撑件，其中屏蔽构件设置在退火能量源和衬底支撑件之间。屏蔽构件是具有大于在基板支撑件上处理的基板的尺寸的基本上平坦的构件，窗口覆盖基本平坦的构件中的中心开口。中心开口具有气体入口入口和气体出口入口，每个入口入口和气体出口通道分别与气体入口气室和气体出口增压室流体连通。连接构件设置在中心开口周围并将窗口保持在中心开口的上方。连接构件中的连接开口分别通过气体入口导管和通过连接构件形成的气体出口导管与气体入口气室和气体出口增压室流体连通。

6. 发明申请

WO2013119975A1 SPIKE ANNEAL RESIDENCE TIME REDUCTION IN RAPID THERMAL PROCESSING CHAMBERS 审中-公开
标题翻译：快速热处理炉中SPIKE ANNEAL RESIDENCE TIME减少
公开(公告)号：WO2013119975A1
公开(公告)日：2013-08-15
申请号：PCT/US2013/025377
申请日：2013-02-08
申请人： APPLIED MATERIALS, INC. , LI, Jiping , KOELMEL, Blake , HUNTER, Aaron Muir , ADERHOLD, Wolfgang R.
发明人： LI, Jiping , KOELMEL, Blake , HUNTER, Aaron Muir , ADERHOLD, Wolfgang R.
IPC分类号： H01L21/205 , H01L21/324
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115
摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.
摘要翻译：本发明一般涉及在快速热处理期间冷却衬底的方法。所述方法通常包括将衬底定位在腔室中并将热量施加到衬底上。在将基板的温度升高到所需温度之后，快速冷却基板。通过增加通过室的气体的流速来促进衬底的快速冷却。通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。冷却板通过由位于其间的气体促进的传导从衬底去除热量。可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。在衬底充分冷却之后，将衬底从腔室中取出。

7. 发明申请

WO2013148119A1 LASER NOISE ELIMINATION IN TRANSMISSION THERMOMETRY 审中-公开
标题翻译：传感器热噪声消除噪声
公开(公告)号：WO2013148119A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/029973
申请日：2013-03-08
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , HAW, Thomas
发明人： LI, Jiping , HUNTER, Aaron Muir , HAW, Thomas
IPC分类号： G01J5/02 , H01L21/324
CPC分类号： B23K26/00 , G01J1/0459 , G01J5/0007 , G01J5/02 , G01J5/06 , G01J5/0896 , G01J5/58 , G01N21/59
摘要： Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.
摘要翻译：公开了用于测量衬底温度的装置和方法。该装置包括温度指示辐射源，用于温度指示辐射的检测器，以及设置在温度指示辐射源和温度指示辐射检测器之间的光路中的去相关器。去相关器可以是宽带放大器和/或模式扰频器。宽带放大器可以是宽带激光器，布拉格光栅，光纤布拉格光栅，拉曼放大器，布里渊放大器或其组合。选择去相关器以发射至少部分由被监测的衬底透射的辐射。如果解相关器是增益驱动装置，则源与去相关器匹配，使得源的发射光谱在解相关器的增益带宽内。

8. 发明申请

WO2012149331A2 OPTICAL ENDPOINT DETECTION SYSTEM 审中-公开
标题翻译：光学端点检测系统
公开(公告)号：WO2012149331A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/035469
申请日：2012-04-27
申请人： APPLIED MATERIALS, INC. , RAMACHANDRAN, Balasubramanian , ISHII, Masato , HUNTER, Aaron Muir
发明人： RAMACHANDRAN, Balasubramanian , ISHII, Masato , HUNTER, Aaron Muir
IPC分类号： H01L21/66
CPC分类号： B08B9/46 , B08B3/08 , B08B3/10 , C23C16/4405 , C23C16/52 , G01N21/94 , G01N2021/8416 , H01L21/67253
摘要： Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.
摘要翻译：提供了用于确定处理室清洁过程的端点的方法和装置。在一些实施例中，具有端点检测系统的处理系统可以包括处理室，其具有由于在处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统，其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

9. 发明申请

WO2014018212A1 CHAMBERS WITH IMPROVED COOLING DEVICES 审中-公开
标题翻译：具有改进的冷却装置的燃烧器
公开(公告)号：WO2014018212A1
公开(公告)日：2014-01-30
申请号：PCT/US2013/047970
申请日：2013-06-26
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph M. , HUNTER, Aaron Muir
发明人： RANISH, Joseph M. , HUNTER, Aaron Muir
IPC分类号： H01L21/02 , H05K7/20
CPC分类号： F25B29/00 , C23C14/541 , C23C16/4411 , C23C16/46 , H01L21/67115
摘要： Embodiments of the present invention provide a heating assembly using a heat exchange device to cool a plurality of heating element. The heating assembly includes a plurality of heating elements, a cooling element having one or more cooling channels for receiving cooling fluid therein, and a heat exchange device disposed between the plurality of heating elements and the cooling element. The heat exchange device comprises a hot interface disposed adjacent to and in thermal contact with the plurality of heating elements and a cold interface disposed adjacent to and in thermal contact with the cooling element.
摘要翻译：本发明的实施例提供了一种使用热交换装置来冷却多个加热元件的加热组件。加热组件包括多个加热元件，具有用于接收冷却流体的一个或多个冷却通道的冷却元件和设置在多个加热元件和冷却元件之间的热交换器件。所述热交换装置包括邻近所述多个加热元件设置并与所述多个加热元件热接触的热界面以及与所述冷却元件相邻并与其接触的冷界面。

10. 发明申请

WO2013181263A1 APPARATUS AND METHODS FOR RAPID THERMAL PROCESSING 审中-公开
标题翻译：用于快速热处理的装置和方法
公开(公告)号：WO2013181263A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/043133
申请日：2013-05-29
申请人： APPLIED MATERIALS, INC. , LAWRENCE LIVERMORE NATIONAL SECURITY, LLC , RANISH, Joseph M. , HUNTER, Aaron Muir , SOULES, Thomas F. , RUBENCHIK, Alexander M.
发明人： RANISH, Joseph M. , HUNTER, Aaron Muir , SOULES, Thomas F. , RUBENCHIK, Alexander M.
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： H05B3/00 , H01L21/268 , H01L21/67115 , H01L21/67248 , H01L21/68792 , Y10S148/09 , Y10S148/093
摘要： Embodiments of the present invention provide apparatus and methods for performing rapid thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a heating source disposed outside a chamber body and configured to provide thermal energy towards a processing volume. The substrate support defines a substrate supporting plane, and the substrate support is configured to support the substrate in the substrate supporting plane. The heating source includes a frame member having an inner wall surrounding an area large enough to encompass a surface area of the substrate, and a plurality of diode laser tiles mounted on the inner wall of the frame member. Each of the plurality of diode laser tiles is directed towards a corresponding area in the processing volume.
摘要翻译：本发明的实施例提供了用于执行快速热处理的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置。该设备包括设置在室主体外部并被配置为朝向处理容积提供热能的加热源。衬底支撑件限定衬底支撑平面，并且衬底支撑件构造成在衬底支撑平面中支撑衬底。加热源包括框架构件，该框架构件具有包围足以包围基板的表面区域的区域的内壁和安装在框架构件的内壁上的多个二极管激光瓦片。多个二极管激光瓦片中的每一个朝向处理体积中的相应区域。

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